公开(公告)号：US20220122867A1

公开(公告)日：2022-04-21

申请号：US17449848

申请日：2021-10-04

Applicant: Tokyo Electron Limited

Inventor： Shingo HISHIYA ,  Hiroaki IKEGAWA ,  Volker HEMEL ,  Bernhard ZOBEL ,  Sung Duk SON

IPC: H01L21/677 ,  H01L21/67 ,  C23C16/44

Abstract: With respect to a boat transfer method for transferring a boat holding a substrate into a processing chamber, the boat transfer method includes supplying a reducing gas into the processing chamber, and transferring the boat into the processing chamber in a state in which the reducing gas is present within the processing chamber.

公开(公告)号：US20210292905A1

公开(公告)日：2021-09-23

申请号：US17186149

申请日：2021-02-26

Applicant: Tokyo Electron Limited

Inventor： Shingo HISHIYA ,  Sung Duk SON

IPC: C23C16/54 ,  C23C16/455 ,  C23C16/44 ,  C23C16/458

Abstract: A substrate processing apparatus includes a processing chamber configured to accommodate a substrate, an injector, including a first connection port and a second connection port, wherein an inside of the injector communicates with an inside of the processing chamber, an exhaust pipe configured to exhaust the inside of the processing chamber, a source gas introducing pipe, connected to the first connection port, and configured to introduce a source gas into the injector, a cleaning gas introducing pipe configured to introduce a cleaning gas into the injector through one of the first connection port and the second connection port, and a vent pipe, connecting the exhaust pipe and the other of the first connection port and the second connection port, and configured to exhaust the inside of the injector.

公开(公告)号：US20140295082A1

公开(公告)日：2014-10-02

申请号：US14229493

申请日：2014-03-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka MOTOYAMA ,  Keisuke SUZUKI ,  Kohei FUKUSHIMA ,  Shingo HISHIYA

IPC: C23C16/44 ,  B05C5/02

CPC classification number: B05C5/02 ,  C23C16/4405 ,  C23C16/4408 ,  H01L21/67109 ,  H01L21/67757

Abstract: A driving method of a vertical heat treatment apparatus having a vertical reaction container with a heating part installed includes: performing a process of loading wafers by a substrate holder support to the reaction container; performing a film forming process of storing a first gas at a storage unit and pressurizing the first gas, and alternatively performing a step of supplying the first gas to the vacuum atmosphere reaction container and a step of supplying the second gas to the reaction container; subsequently performing a purge process of unloading the substrate holder support and supplying a purge gas into the reaction container to forcibly peel off a thin film attached to the reaction container; and while the purge process is performed, performing a process of repeating storing the purge gas at the storage unit, pressurizing the gas and discharging the gas into the reaction container.

Abstract translation: 具有安装有加热部件的立式反应容器的立式热处理装置的驱动方法包括：进行将基板保持架支撑体的晶片装载到反应容器的处理; 执行在存储单元处存储第一气体并对第一气体加压的成膜过程，或者执行将第一气体供应到真空气氛反应容器的步骤和将第二气体供应到反应容器的步骤; 随后执行卸载衬底保持器支撑件并将清洗气体供应到反应容器中以强制剥离附着到反应容器上的薄膜的吹扫过程; 并且在进行清洗处理的同时，进行重复将清洗气体储存在储存单元处的过程，对气体加压并将气体排出到反应容器中。

公开(公告)号：US20190283093A1

公开(公告)日：2019-09-19

申请号：US16354619

申请日：2019-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sung Duk SON ,  Shingo HISHIYA ,  Akinobu KAKIMOTO

IPC: B08B9/08 ,  B08B5/00 ,  C23C16/44

Abstract: There is provided a method of cleaning a film forming apparatus conducted after a film forming process by supplying a source gas and a reaction gas to produce a reaction product into a processing container to form a film of the reaction product on a substrate. The method includes: controlling, in the film forming process, a first film deposited in the processing container and a second film deposited in a source gas supply part to become different kinds of films; performing, after the film forming process, a cleaning process by supplying a cleaning gas having an etching selection ratio of the second film to the first film being greater than 1 so as to etch and remove the second film; and performing, after the cleaning process, a surface control process of making a surface state of the first film close to a state before the cleaning process was performed.

公开(公告)号：US20190131126A1

公开(公告)日：2019-05-02

申请号：US16173214

申请日：2018-10-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kyungseok KO ,  Hiromi SHIMA ,  Eiji KIKAMA ,  Keisuke SUZUKI ,  Shingo HISHIYA

IPC: H01L21/02 ,  H01L23/532 ,  H01L21/67 ,  H01L27/11582

Abstract: There is provided a method of forming a blocking silicon oxide film on a target surface on which a silicon oxide film and a silicon nitride film are exposed, including: placing a workpiece having the target surface on which the silicon oxide film and the silicon nitride film are exposed in a processing container under a depressurized atmosphere; forming a spacer polysilicon film to be a sacrificial film on the target surface on which the silicon oxide film and the silicon nitride film are exposed; and substituting the spacer polysilicon film with a substitution silicon oxide film by supplying thermal energy, oxygen radicals and hydrogen radicals onto the workpiece.

公开(公告)号：US20150259796A1

公开(公告)日：2015-09-17

申请号：US14657524

申请日：2015-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keisuke SUZUKI ,  Hiroki MURAKAMI ,  Shingo HISHIYA ,  Kentaro KADONAGA ,  Minoru OBATA

IPC: C23C16/455 ,  C23C16/24 ,  C23C16/458 ,  C23C16/26 ,  C23C16/44 ,  C23C16/52

CPC classification number: C23C16/30 ,  C23C16/4408 ,  C23C16/45529 ,  C23C16/45531

Abstract: A method of forming a thin film containing a doping element in a vacuum atmosphere, which includes: supplying a source gas into a processing vessel being under the vacuum atmosphere through a source gas supply unit such that a source of the source gas is adsorbed onto a substrate in the processing vessel; repeating, a plurality of times, a sequence of operations of supplying a doping gas containing the doping element into the processing vessel through a doping gas supply unit, followed by sealing the doping gas inside the processing vessel, followed by vacuum-exhausting the processing vessel; supplying a reaction gas into the processing vessel through a reaction gas supply unit such that the reaction gas reacts with the source to produce a reaction product; and replacing an internal atmosphere of the processing vessel, the replacing being performed between the operations.

Abstract translation: 一种在真空气氛中形成含有掺杂元素的薄膜的方法，包括：通过源气体供应单元将源气体供应到处于真空气氛下的处理容器中，使得源气体源被吸附到 处理容器中的底物; 重复多次，通过掺杂气体供应单元将含有掺杂元素的掺杂气体供应到处理容器中的操作的顺序，然后将处理容器内的掺杂气体密封，然后真空排出处理容器 ; 通过反应气体供应单元将反应气体供应到处理容器中，使得反应气体与源反应产生反应产物; 并且更换处理容器的内部气氛，在操作之间进行更换。

公开(公告)号：US20230422348A1

公开(公告)日：2023-12-28

申请号：US18210338

申请日：2023-06-15

Applicant: Tokyo Electron Limited

Inventor： Yasuaki KIKUCHI ,  Tatsuya YAMAGUCHI ,  SungDuk SON ,  Miki OUCHI ,  Nobuyuki HIROTA ,  Shingo HISHIYA

IPC: H05B1/02

CPC classification number: H05B1/023

Abstract: A substrate processing apparatus includes a processing container in which a plurality of substrates are processed; a plurality of heaters configured to control a temperature of the plurality of substrates accommodated in the processing container for each of a plurality of zones; and a controller configured to control an operation of the plurality of heaters. The controller is configured to control the plurality of heaters to a set temperature set in advance for each of the plurality of zones, thereby performing a processing on the plurality of substrates accommodated in the processing container, determine whether an abnormality determination condition is satisfied, including that an output value of at least one heater of the plurality of heaters is equal to or less than a heater control resolution, and issue a warning for the set temperature for each of the plurality of zones based on a result of the determining.

公开(公告)号：US20220270940A1

公开(公告)日：2022-08-25

申请号：US17675225

申请日：2022-02-18

Applicant: Tokyo Electron Limited

Inventor： Shingo HISHIYA ,  Nobutoshi TERASAWA ,  Fumiaki NAGAI ,  Kazuaki SASAKI ,  Hiroaki KIKUCHI ,  Masayuki KITAMURA ,  Kazuo YABE ,  Motoshi FUKUDOME ,  Tatsuya MIYAHARA ,  Eiji KIKAMA ,  Yuki TANABE ,  Tomoyuki NAGATA

IPC: H01L21/66 ,  C23C16/52 ,  C23C16/455 ,  H01L21/02

Abstract: An abnormality detection method includes: supplying a gas controlled to a selected rate to a gas supply pipe via the gas pipe connected to the gas supply pipe, thereby introducing the gas into a reaction region of a processing container provided in a processing apparatus from a gas hole of the gas supply pipe; measuring a pressure inside the gas pipe by a pressure gauge attached to the gas pipe; and detecting an abnormality of at least one of the gas supply pipe and the gas pipe based on the pressure measured at the measuring.

公开(公告)号：US20190080913A1

公开(公告)日：2019-03-14

申请号：US16126195

申请日：2018-09-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kyungseok KO ,  Hiromi SHIMA ,  Eiji KIKAMA ,  Shingo HISHIYA

IPC: H01L21/28 ,  H01L21/02 ,  H01L27/11582 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/56

Abstract: There is provided a method of forming a silicon oxide film on a target surface on which a silicon oxide film and a silicon nitride film are exposed. The method comprises placing a workpiece having the target surface on which the silicon oxide film and the silicon nitride film are exposed, in a processing container under a depressurized atmosphere; forming a spacer silicon nitride film to be a sacrificial film on the target surface on which the silicon oxide film and the silicon nitride film are exposed; and substituting the spacer silicon nitride film with a substitution silicon oxide film by supplying thermal energy, oxygen radicals and hydrogen radicals onto the workpiece.

公开(公告)号：US20130200491A1

公开(公告)日：2013-08-08

申请号：US13760210

申请日：2013-02-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yu WAMURA ,  Koji AKIYAMA ,  Shingo HISHIYA ,  Katsushige HARADA

IPC: H01L49/02

CPC classification number: H01L28/60 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02356 ,  H01L28/75 ,  H01L28/92

Abstract: Provided are a method of manufacturing a capacitor capable of achieving a high dielectric constant property and a low leakage current, a capacitor, and a method of forming a dielectric film used in the capacitor. The capacitor is fabricated by forming a lower electrode layer on a substrate; forming a first TiO2 film having an interface control function on the lower electrode layer; forming a ZrO2-based film on the first TiO2 film; performing an annealing process for crystallizing ZrO2 in the ZrO2-based film, after forming the ZrO2-based film; forming a second TiO2 film which serves as a capacity film on the ZrO2-based film; and forming an upper electrode layer on the second TiO2 film.

Abstract translation: 提供一种制造能够实现高介电常数性能和低漏电流的电容器的方法，电容器以及形成在电容器中使用的电介质膜的方法。 通过在基板上形成下电极层来制造电容器; 在下电极层上形成具有界面控制功能的第一TiO 2膜; 在第一TiO 2膜上形成ZrO 2基膜; 在形成ZrO 2基膜之后进行用于使ZrO 2基膜中的ZrO 2结晶的退火处理; 形成用作ZrO2基膜上的电容膜的第二TiO 2膜; 以及在所述第二TiO 2膜上形成上电极层。