公开(公告)号：US20170141266A1

公开(公告)日：2017-05-18

申请号：US15422216

申请日：2017-02-01

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Sheng-hsien HSU ,  Gong CHEN ,  Su-hui LIN ,  Yu-chieh HUANG ,  Chen-ke HSU

IPC: H01L33/22 ,  H01L33/16 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0058

Abstract: A patterned sapphire substrate has a first surface and a second surface opposite to each other; the connection zone between first protrusion portions has no C surface (i.e. (0001) surface); and the patterned sapphire substrate may have no C surface on the growth surface to reduce the threading dislocation density of the GaN epitaxial material on the sapphire substrate.

公开(公告)号：US20230178684A1

公开(公告)日：2023-06-08

申请号：US17984956

申请日：2022-11-10

Applicant: Xiamen Sanan Optoelectronics Technology Co., Ltd.

Inventor： Bin JIANG ,  Yashu ZANG ,  Chung-Ying CHANG ,  Kang-Wei PENG ,  Sihe CHEN ,  Siyi LONG ,  Mingchun TSENG ,  Gong CHEN ,  Weichun TSENG

IPC: H01L33/10 ,  H01L33/32 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L33/10 ,  H01L33/32 ,  H01L33/382 ,  H01L33/62

Abstract: A light-emitting device includes a substrate, a first type semiconductor layer, a protrusion, and a first reflection structure. The first type semiconductor layer is disposed on a surface of the substrate, and has a surface that has first and second conductive regions. The first type semiconductor layer is made of AlxGa1-xN, and x ranges from 0 to 1. A protrusion includes an active layer and a second type semiconductor layer that are sequentially disposed on the first conductive region of the surface of the first type semiconductor layer in such order. A first reflection structure is disposed in the protrusion, and penetrates through the second type semiconductor layer, the active layer of the protrusion and into the first type semiconductor layer. The light-emitting device emits light that has an emission wavelength ranging from 200 nm to 320 nm.

公开(公告)号：US20190115511A1

公开(公告)日：2019-04-18

申请号：US16147604

申请日：2018-09-29

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Su-Hui Lin ,  Lingyuan Hong ,  SHENG-HSIEN HSU ,  Sihe CHEN ,  Dazhong CHEN ,  Gong CHEN ,  CHIA-HUNG CHANG ,  KANG-WEI PENG

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/10 ,  H01L33/00 ,  H01L27/15

Abstract: A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.

公开(公告)号：US20170263812A1

公开(公告)日：2017-09-14

申请号：US15607461

申请日：2017-05-27

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Chia-hung CHANG ,  Gong CHEN ,  Su-hui LIN ,  Kang-wei PENG ,  Sheng-hsien HSU ,  Chuan-gui LIU ,  Xiao-xiong LIN ,  Yu ZHOU ,  Jing-jing WEI ,  Jing HUANG

IPC: H01L33/02 ,  H01L27/15 ,  H01L33/60 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/025 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/60

Abstract: An LED fabrication method includes forming impurity release holes by focusing a laser at the substrate back surface, and forming invisible explosion points by focusing a laser inside the substrate on positions corresponding to the impurity release holes; communicating the impurity release holes with the invisible explosion points to release impurities generated during forming of the invisible explosion points from the substrate through the impurity release holes, thereby avoiding low external quantum efficiency resulting from adherence of impurities to the side wall of the invisible explosion points. By focusing on a position with 10 μm˜40 ˜m inward from the substrate back side, adjusting laser energy and frequency to burn holes inside the substrate to penetrate and expose the substrate back surface, thereby effectively removing by-products, and reducing light absorption by such by-products, light extraction from a side wall of the LED can also be improved and light extraction efficiency is enhanced.

公开(公告)号：US20240413291A1

公开(公告)日：2024-12-12

申请号：US18811718

申请日：2024-08-21

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Su-Hui Lin ,  Lingyuan Hong ,  SHENG-HSIEN HSU ,  Sihe CHEN ,  Dazhong CHEN ,  Gong CHEN ,  CHIA-HUNG CHANG ,  KANG-WEI PENG

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/00 ,  H01L33/10 ,  H01L33/14 ,  H01L33/38 ,  H01L33/42

Abstract: A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.

公开(公告)号：US20210083145A1

公开(公告)日：2021-03-18

申请号：US17105294

申请日：2020-11-25

Applicant: Xiamen Sanan Optoelectronics Technology Co., Ltd

Inventor： Feng WANG ,  Gong CHEN ,  Hongwei XIA ,  Yu ZHAN ,  Ling-Yuan HONG ,  Su-Hui LIN ,  Kang-Wei PENG ,  Chia-Hung CHANG

IPC: H01L33/22 ,  H01L33/14

Abstract: A light emitting diode device includes a light emitting epitaxial layered structure and a current spreading layer formed on the light emitting epitaxial layered structure. The current spreading layer has a top surface and a bottom surface that are respectively distal from and proximal to the light emitting epitaxial layered structure, and a peripheral surface that interconnects the top surface and the bottom surface and that is formed with a first patterned structure. The peripheral surface and the bottom surface cooperatively define an interior angle included therebetween which is greater than 90° and smaller than 180°.