摘要:
Provided is a pressure-sensitive adhesive tape which has a sufficient pressure-sensitive adhesive strength for an adherend, is excellent in heat resistance, and can be easily peeled without leaving a pressure-sensitive adhesive residue on the adherend particularly upon peeling. The pressure-sensitive adhesive tape includes, on a substrate, a pressure-sensitive adhesive layer containing a lipophilic layered clay mineral, in which the layered clay mineral is in a state of being peeled and dispersed, and the interlayer distance of the layered clay mineral is 50 Å or more.
摘要:
A microneedle and a microneedle array, which have both aspects of safety and easiness to use and can administer a predetermined dose of a medical agent without causing a pain by smoothly running into the skin surface layer of a patient, includes a frustum and a forward end portion thereon, the forward end portion having a forward end apex angle in the range of 15 to 60° and a forward end diameter in the range of 1 to 20 μm and satisfying the expression H/D≧5, where H is a total height of the microneedle, and D is a diameter of a bottom surface of the frustum).
摘要:
An alumina particle composite (1) includes an alumina particle (2) and an organic acid (3) chemically bonded to a surface of the alumina particle (2). Further, the alumina particle (2) has a short axis length of 1 to 10 nm, a long axis length of 20 to 400 nm, and an aspect ratio of 5 to 80, and is represented by Formula I, Al2O3·nH2O Formula I where n is 0 or more.
摘要翻译:氧化铝颗粒复合材料(1)包括氧化铝颗粒(2)和与氧化铝颗粒(2)的表面化学键合的有机酸(3)。 此外,氧化铝颗粒(2)的短轴长度为1〜10nm,长轴长度为20〜400nm,纵横比为5〜80,由式I表示,Al 2 O 3·nH 2 O式I 其中n为0以上。
摘要:
Provided is a method of manufacturing a semiconductor device wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The method of manufacturing a semiconductor device of the present invention includes preparing a semiconductor wafer with a plurality of members for connection formed on both first and second surfaces; preparing a laminated film including a dicing sheet with a pressure-sensitive adhesive layer laminated on a base material, and a curable film that is laminated on the pressure-sensitive adhesive layer and has a thickness equivalent to or more than the height of the member for connection on the first surface; pasting the curable film of the laminated film to the semiconductor wafer while facing the curable film to the first surface so that the members for connection are not exposed to the pressure-sensitive adhesive layer; and dicing the semiconductor wafer to form a semiconductor element.
摘要:
It is an object of the present invention to provide a load leveling system of a power system capable of attaining load leveling in a distribution substation unit and a method thereof. Disclosed is a load leveling system of a power system with a controller having a major customer and lower transforming apparatus, and with a customer connected to the lower transforming apparatus via a low-voltage line. The system also has a communication unit between the customer and its own system, and control use time zones of devices within the customer; an electric demand prediction unit, and a first load leveling processing unit. By employing such an arranged system, it becomes possible to provide a load leveling system of a power system capable of realizing load leveling of both a distribution substation unit and a pole transformer unit.
摘要:
Provided is a laminated film wherein the space between semiconductor elements that are three-dimensionally mounted can be filled easily and securely. The laminated film of the present invention is a laminated film for filling the space between semiconductor elements that are electrically connected through a member or connection, the film including a dicing sheet in which a pressure-sensitive adhesive layer is laminated on a base material and a curable film that is laminated on the pressure-sensitive adhesive layer, wherein the curable film has a lowest melt viscosity at 50 to 200° C. of 1×102 Pa·s or more and 1×104 Pa·s or less.
摘要:
An alumina particle composite (1) includes an alumina particle (2) and an organic acid (3) chemically bonded to a surface of the alumina particle (2). Further, the alumina particle (2) has a short axis length of 1 to 10 nm, a long axis length of 20 to 400 nm, and an aspect ratio of 5 to 80, and is represented by Formula I, Al2O3.nH2O Formula I where n is 0 or more.
摘要翻译:氧化铝颗粒复合材料(1)包括氧化铝颗粒(2)和与氧化铝颗粒(2)的表面化学键合的有机酸(3)。 此外,氧化铝颗粒(2)的短轴长度为1〜10nm,长轴长度为20〜400nm,纵横比为5〜80,由式I表示,Al 2 O 3·nH 2 O式I 其中n为0以上。
摘要:
A conductor layer 2 is formed as a circuit pattern on a base insulating layer 1, a terminal 3 is formed thereon, and a supporting column 4 is formed in the vicinity of the terminal on the upper face of the base insulating layer 1. Here, supposing the protrusion height B of the bump from the element to be connected is B, the height of the supporting column is H, the height of the terminal is h, and the layer thickness of the terminal is t, as measured from the upper face of the base insulating layer as the reference surface, the height H of the supporting column is determined to satisfy B
摘要:
Provided are an encapsulating resin sheet having improved a connection reliability by improving a connection failure, and by suppressing intrusion of an inorganic filler between terminals of the semiconductor element and the interconnection circuit substrate, a semiconductor device using the same, and a fabricating method for the semiconductor device. The encapsulating resin sheet is an epoxy resin composition sheet having a two-layer structure of an inorganic filler containing layer and an inorganic filler non-containing layer, in which a melt viscosity of the inorganic filler containing layer is 1.0×102 to 2.0×104 Pa·s, a melt viscosity of the inorganic filler non-containing layer is 1.0×103 to 2.0×105 Pa·s, a viscosity difference between both layers is 1.5×104 Pa·s or more; and a thickness of the inorganic filler non-containing layer is ⅓ to ⅘ of a height of the connecting electrode portion formed in the semiconductor element.
摘要:
An alumina particle (1) of the present invention has an alumina body with a short axis length (b) of 1 to 10 nm, a long axis length (a) of 20 to 400 nm and an aspect ratio (a/b) of 5 to 80. The alumina body is expressed by a Formula I, and n is not less than 0. Al2O3.nH2O Formula I
摘要翻译:本发明的氧化铝颗粒(1)具有短轴长(b)为1〜10nm,长轴长(a)为20〜400nm,纵横比(a / b)为 氧化铝体由式I表示,n不小于0.Al 2 O 3·nH 2 O式I