公开(公告)号：US07601402B2

公开(公告)日：2009-10-13

申请号：US10703092

申请日：2003-11-07

申请人： Yusaku Kashiwagi ,  Yoshihisa Kagawa ,  Kohei Kawamura ,  Gishi Chung

发明人： Yusaku Kashiwagi ,  Yoshihisa Kagawa ,  Kohei Kawamura ,  Gishi Chung

IPC分类号： H05H1/24

CPC分类号： C23C16/45523 ,  C23C16/401 ,  C23C16/56 ,  F27B17/0025 ,  H01J37/32082 ,  H01L21/67161 ,  H01L21/67207

摘要： A method for forming a porous insulating film includes an insulating film forming step and a hole forming step. During the insulating film forming step, plasma processing of an organic siloxane group compound and an organic compound having a polar group forms an insulating film having a siloxane structure. Molecules of the organic compound having a polar group are contained within this siloxane structure. During the hole forming step, excitation gas removes molecules of the organic compound having a polar group to provide holes in the insulating film. According to this method, an insulating film with a predetermined thickness and holes formed uniformly in the thickness direction can be obtained.

摘要翻译： 形成多孔绝缘膜的方法包括绝缘膜形成步骤和孔形成步骤。 在绝缘膜形成步骤中，有机硅氧烷基化合物和具有极性基团的有机化合物的等离子体处理形成具有硅氧烷结构的绝缘膜。 具有极性基团的有机化合物的分子包含在该硅氧烷结构内。 在孔形成步骤期间，激发气体除去具有极性基团的有机化合物的分子，以在绝缘膜中提供孔。 根据该方法，可以得到厚度方向均一地形成有规定厚度的绝缘膜和孔。

公开(公告)号：US06949829B2

公开(公告)日：2005-09-27

申请号：US10380038

申请日：2001-09-11

申请人： Takashi Akahori ,  Gishi Chung ,  Kohei Kawamura

发明人： Takashi Akahori ,  Gishi Chung ,  Kohei Kawamura

IPC分类号： H01L21/314 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/76807 ,  H01L21/314 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： With a stopper layer 19 as an etching stopper, a second groove 14a and a contact hole 13a are formed. Copper is buried inside the second groove 14a and the contact hole 13a, thereby forming a plug layer 22 and an overlying wiring layer 21 connected to an underlying wiring layer 17 via the plug layer 22. The stopper layer 19 is comprised of Si, C and N as essential components. First and second cap layers 18 and 23 are also comprised of Si, C and N as essential components.

摘要翻译： 作为蚀刻停止件的阻挡层19形成有第二槽14a和接触孔13a。 铜被埋在第二槽14a和接触孔13a内，由此形成插头层22和覆盖的布线层21，该布线层21经由插塞层22连接到下面的布线层17。 阻挡层19由Si，C和N组成。 第一和第二盖层18和23也由Si，C和N组成。

公开(公告)号：US08394231B2

公开(公告)日：2013-03-12

申请号：US11656379

申请日：2007-01-23

申请人： Koichi Takatsuki ,  Hikaru Yoshitaka ,  Shigeo Ashigaki ,  Yoichi Inoue ,  Takashi Akahori ,  Shuuichi Ishizuka ,  Syoichi Abe ,  Takashi Suzuki ,  Kohei Kawamura ,  Hidenori Miyoshi ,  Gishi Chung ,  Yasuhiro Oshima ,  Hiroyuki Takahashi

发明人： Koichi Takatsuki ,  Hikaru Yoshitaka ,  Shigeo Ashigaki ,  Yoichi Inoue ,  Takashi Akahori ,  Shuuichi Ishizuka ,  Syoichi Abe ,  Takashi Suzuki ,  Kohei Kawamura ,  Hidenori Miyoshi ,  Gishi Chung ,  Yasuhiro Oshima ,  Hiroyuki Takahashi

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00 ,  H05H1/24 ,  H01J7/24

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32541

摘要： That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.

摘要翻译： 与基座10相对的电极板20的表面具有突出形状。 电极板20在突起20a处嵌合在屏蔽环26的开口26a中。 此时，突起20a的厚度与屏蔽环26的厚度大致相同。因此，电极板20和屏蔽环26形成大致相同的平面。 突起20a的主表面的直径为晶片W的直径的1.2〜1.5倍。电极板20例如由SiC形成。

公开(公告)号：US20070131171A1

公开(公告)日：2007-06-14

申请号：US11656379

申请日：2007-01-23

申请人： Koichi Takatsuki ,  Hikaru Yoshitaka ,  Shigeo Ashigaki ,  Yoichi Inoue ,  Takashi Akahori ,  Shuuichi Ishizuka ,  Syoichi Abe ,  Takashi Suzuki ,  Kohei Kawamura ,  Hidenori Miyoshi ,  Gishi Chung ,  Yasuhiro Oshima ,  Hiroyuki Takahashi

发明人： Koichi Takatsuki ,  Hikaru Yoshitaka ,  Shigeo Ashigaki ,  Yoichi Inoue ,  Takashi Akahori ,  Shuuichi Ishizuka ,  Syoichi Abe ,  Takashi Suzuki ,  Kohei Kawamura ,  Hidenori Miyoshi ,  Gishi Chung ,  Yasuhiro Oshima ,  Hiroyuki Takahashi

IPC分类号： C23C16/00

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32541

摘要： That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, die thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.

摘要翻译： 与基座10相对的电极板20的表面具有突起形状。 电极板20在突出部20a安装在屏蔽环26的开口26a中。 此时，突出部20a的芯片厚度与屏蔽环26的厚度大致相同。因此，电极板20和屏蔽环26形成大致相同的平面。 突起部20a的主表面的直径为晶片W的直径的1.2〜1.5倍。电极板20例如由SiC形成。

公开(公告)号：US08197913B2

公开(公告)日：2012-06-12

申请号：US12008770

申请日：2008-01-14

申请人： Takaaki Matsuoka ,  Kohei Kawamura

发明人： Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H05H1/24

CPC分类号： H01L21/3148 ,  C23C16/0272 ,  C23C16/36 ,  C23C16/511 ,  H01L21/3185 ,  H01L21/76822 ,  H01L21/76829

摘要： The present invention is a plasma processing method for forming a film on a substrate, the method including the steps of processing a first material gas with plasma having an electron density W and an electron temperature X, processing a second material gas with plasma having an electron density Y, which is different from the electron density W, and an electron temperature Z, which is different from the electron temperature X, and forming the film on the substrate by reacting the processed first material gas and the processed second material gas.

摘要翻译： 本发明是一种用于在基板上形成膜的等离子体处理方法，该方法包括以等离子体处理具有电子密度W和电子温度X的等离子体的第一原料气体的处理步骤，用具有电子的等离子体处理第二原料气体 与电子密度W不同的密度Y和与电子温度X不同的电子温度Z，并且通过使被处理的第一原料气体和被处理的第二原料气体反应而在基板上形成膜。

公开(公告)号：US20100032844A1

公开(公告)日：2010-02-11

申请号：US12514173

申请日：2007-11-08

申请人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura

发明人： Tadahiro Ohmi ,  Seiji Yasuda ,  Atsutoshi Inokuchi ,  Takaaki Matsuoka ,  Kohei Kawamura

IPC分类号： H01L23/48

CPC分类号： H01L21/3127 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/76829 ,  H01L21/76835 ,  H01L21/76843 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.

摘要翻译： 半导体器件等的布线结构包括具有形成在底层上的氟碳膜的层间绝缘膜和埋在层间绝缘膜中的导体。 氟碳膜含氮，介电常数低，重现性好，稳定性好。

公开(公告)号：US20100032838A1

公开(公告)日：2010-02-11

申请号：US12516862

申请日：2007-11-30

申请人： Yoshiyuki Kikuchi ,  Yasuo Kobayashi ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Hiraku Ishikawa

发明人： Yoshiyuki Kikuchi ,  Yasuo Kobayashi ,  Kohei Kawamura ,  Toshihisa Nozawa ,  Hiraku Ishikawa

IPC分类号： H01L23/532 ,  H01L21/314 ,  C09D1/00

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02123 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/76811 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is an amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed low dielectric constant, a semiconductor device including the amorphous carbon film and a technology for forming the amorphous carbon film. Since the amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation, it is possible to form the amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed dielectric constant as low as 3.3 or less. Accordingly, when the amorphous carbon film is used as a film in the semiconductor device, troubles such as a film peeling can be suppressed.

摘要翻译： 本发明提供一种具有高弹性模量和低收缩率以及低介电常数的非晶碳膜，包括非晶碳膜的半导体器件和用于形成非晶碳膜的技术。 由于通过在成膜期间控制Si（硅）的添加量来形成无定形碳膜，所以可以形成具有高的弹性模量和低热收缩率的无定形碳膜，其介电常数低至3.3 或更少。 因此，当在半导体器件中使用无定形碳膜作为膜时，可以抑制诸如膜剥离的问题。

公开(公告)号：US20070243377A1

公开(公告)日：2007-10-18

申请号：US11632604

申请日：2005-07-08

申请人： Sohei Nishida ,  Kohei Kawamura ,  Toshiaki Ebisu

发明人： Sohei Nishida ,  Kohei Kawamura ,  Toshiaki Ebisu

IPC分类号： D02G3/00 ,  D02G3/02

CPC分类号： D01F6/54 ,  C08F220/14 ,  C08F220/44 ,  C08F220/58 ,  C08F228/02 ,  D01F6/48 ,  Y10T428/2913 ,  Y10T428/2929 ,  Y10T428/2931 ,  Y10T442/64

摘要： A modacrylic shrinkable fiber according to the present invention is containing a polymer composition obtained by mixing 50 to 99 parts by weight of a polymer (A) containing 40 wt % to 80 wt % of acrylonitrile, 20 wt % to 60 wt % of a halogen-ontaining monomer and 0 wt % to 5 wt % of a sulfonic-acid-containing monomer, and 1 to 50 parts by weight of a polymer (B) containing 5 wt % to 70 wt % of acrylonitrile, 20 wt % to 94 wt % of an acrylic ester and 1 wt % to 40 wt % of a sulfonic-acid-containing monomer containing a methallylsulfonic acid or metal salts thereof or amine salts thereof, in which a total amount of the polymer (A) and the polymer (B) is 100 parts by weight. In this way, a modacrylic shrinkable fiber that has a favorable color development property after dyeing and a high shrinkage ratio even after dyeing is obtained.

摘要翻译： 根据本发明的改性聚丙烯酸收缩纤维包含通过混合50至99重量份的含有40重量％至80重量％的丙烯腈，20重量％至60重量％的卤素的聚合物（A）而获得的聚合物组合物 的单体和0重量％〜5重量％的含磺酸的单体，和1〜50重量份的含有5重量％〜70重量％的丙烯腈的聚合物（B），20重量％〜94重量％ 丙烯酸酯和1重量％至40重量％的含有甲代烯丙基磺酸或其金属盐的磺酸单体或其胺盐，其中聚合物（A）和聚合物（B）的总量 ）为100重量份。 这样，得到染色后的显色性良好且染色后的收缩率高的改性聚丙烯腈系收缩性纤维。

公开(公告)号：US20070077737A1

公开(公告)日：2007-04-05

申请号：US10580036

申请日：2004-11-19

申请人： Yasuo Kobayashi ,  Kohei Kawamura

发明人： Yasuo Kobayashi ,  Kohei Kawamura

IPC分类号： H01L21/26 ,  H01L21/42 ,  H05H1/24

CPC分类号： C23C16/511 ,  C23C16/26 ,  C23C16/4404 ,  C23C16/4405 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/3244

摘要： A microwave is radiated into a processing chamber (1) from a planar antenna member of an antenna (7) through a dielectric plate (6). With this, a C5F8 gas supplied into the processing chamber (1) from a gas supply member (3) is changed (activated) into a plasma so as to form a fluorine-containing carbon film of a certain thickness on a semiconductor wafer (W). Each time a film forming process of forming a film on one wafer is carried out, a cleaning process and a pre-coating process are carried out. In the cleaning process, the inside of the processing chamber is cleaned with a plasma of an oxygen gas and a hydrogen gas. In the pre-coating process, the C5F8 gas is changed into a plasma, and a pre-coat film of fluorine-containing carbon thinner than the fluorine-containing carbon film formed in the film forming process is formed.

摘要翻译： 通过电介质板（6）将微波从天线（7）的平面天线部件辐射到处理室（1）中。 由此，从气体供给构件（3）供给到处理室（1）中的C 5 C 8 C 8气体被变更（激活）为等离子体，从而 在半导体晶片（W）上形成一定厚度的含氟碳膜。 每次进行在一个晶片上形成膜的成膜工艺时，进行清洗处理和预涂工序。 在清洁过程中，用氧气和氢气的等离子体清洁处理室的内部。 在预涂布过程中，将C 5 F 8 N气体变成等离子体，并且含氟碳的预涂膜比含氟 形成在成膜工艺中形成的碳膜。

公开(公告)号：US20060068104A1

公开(公告)日：2006-03-30

申请号：US11231962

申请日：2005-09-22

申请人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

发明人： Tadahiro Ishizaka ,  Yasuhiro Oshima ,  Naoki Yoshii ,  Takashi Shigeoka ,  Kohei Kawamura ,  Yukio Fukuda ,  Yasuhiko Kojima

IPC分类号： C23C16/00

CPC分类号： C23C16/34 ,  C23C16/45529 ,  C23C16/45542 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/7685 ,  H01L2221/1078

摘要： A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, (c) a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and (d) a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.

摘要翻译： 用于在处理室中在基板上形成膜的膜制造方法包括第一成膜工艺和第二成膜工艺。 在第一成膜方法中，（a）第一步骤，将含有金属 - 有机化合物的第一源气体不含卤素元素供应到室中，然后从室除去第一源气体，和（b） 将包含氢或氢化合物的第二源气体供应到室中，然后从室除去第二源气体的第二步骤重复预定次数。 在第二成膜方法中，（c）第三步骤，将含有金属卤化物的第三源气体供应到室中，然后从室中除去第三气体，以及（d）第四步骤， 将包含氢或氢化合物的第四源气体进入室，然后从室除去第四源气体，重复预定次数。