公开(公告)号：US12110585B2

公开(公告)日：2024-10-08

申请号：US17167469

申请日：2021-02-04

申请人： APPLIED MATERIALS, INC.

发明人： Naman Apurva ,  Lara A. Hawrylchak ,  Mahesh Ramakrishna ,  Sriharish Srinivasan ,  Prashant Agarwal

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  H01L21/67

CPC分类号： C23C16/4412 ,  C23C16/45517 ,  C23C16/45591 ,  C23C16/4585 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32633 ,  H01J37/32834 ,  H01L21/67069

摘要： Embodiments of exhaust liner systems are provided herein. In some embodiments, an exhaust liner system for use in a process chamber includes a lower exhaust liner having an annular body with a central opening; an upper flange, a central flange, and a lower flange extending outward from the annular body, wherein the lower flange and the central flange partially define a first plenum, and wherein the central flange and the upper flange partially define a second plenum; a plurality of exhaust holes from the central opening to the first plenum; and at least one cutout in the central flange to provide a flow path from the first plenum to the second plenum, wherein the lower exhaust liner defines a gas flow path from the central opening to the first plenum via the plurality of exhaust holes and from the first plenum to the second plenum via the least one cutout.

公开(公告)号：US12106946B2

公开(公告)日：2024-10-01

申请号：US17438931

申请日：2020-03-13

申请人： Lam Research Corporation

发明人： Thorsten Lill ,  Mariusch Gregor

IPC分类号： H01J37/32 ,  F04D19/04 ,  H01L21/683 ,  H01L21/687

CPC分类号： H01J37/32834 ,  F04D19/042 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32715 ,  H01L21/68785 ,  H01L21/68792 ,  H01J37/321 ,  H01J37/32633 ,  H01L21/6831

摘要： A processing chamber and method of etching a semi-conductor substrate are presented. The processing chamber is symmetric, with the centerlines of a chuck and stem of a stage to retain a semi-conductor substrate aligned with a centerline of a passage in a core of a pump used to evacuate the processing chamber and with a center-line of a gas port through which gas is introduced to the processing chamber. The stem extends through the passage and a spiral groove is formed in the passage in only one of the stem or an inner surface of the core to provide pumping action to counter back streaming of the gas from an exhaust of the pump in an intermediate and viscous flow regime inside a gap between the stem and the core.

公开(公告)号：US20240234100A9

公开(公告)日：2024-07-11

申请号：US18381151

申请日：2023-10-17

申请人： SEMES CO., LTD.

发明人： Je Ho KIM ,  Tae Suk JUNG

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

CPC分类号： H01J37/32633 ,  H01J37/3244 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68742 ,  H01J2237/334

摘要： Proposed is a substrate processing apparatus, including a housing configured to provide a processing space therein, a substrate support unit configured to support a substrate within the processing space, and a baffle unit provided to surround a circumference of the substrate support unit. The baffle unit includes a baffle plate provided to surround the circumference of the substrate support unit and having at least one slit therein, and a drive member that lifts and moves the baffle plate, and the housing is provided in a shape capable of changing a size of a space between the processing space and the baffle plate according to a lifting movement of the baffle plate.

公开(公告)号：US20240120185A1

公开(公告)日：2024-04-11

申请号：US18544468

申请日：2023-12-19

申请人： Tokyo Electron Limited

发明人： Kazuki TSUCHIYA

IPC分类号： H01J37/32

CPC分类号： H01J37/32834 ,  H01J37/32633 ,  H01J37/32862 ,  H01J2237/3343

摘要： The chamber is internally provided with a stage on which a substrate is disposed, and an exhaust port connected to an exhaust system around the stage. The baffle is provided around the stage, and divides a space in the chamber into a processing space where plasma processing is performed on the substrate, and an exhaust space connected to the exhaust port. The switching mechanism switches the baffle between a shield state in which the baffle shields a plasma and a transmissive state in which the baffle allows a plasma to pass therethrough. The controller controls the switching mechanism to switch the baffle from the shield state to the transmissive state or from the transmissive state to the shield state.

公开(公告)号：US11948778B2

公开(公告)日：2024-04-02

申请号：US17375784

申请日：2021-07-14

申请人： KOKUSAI ELECTRIC CORPORATION

发明人： Hidehiro Yanai ,  Shin Hiyama ,  Toru Kakuda ,  Toshiya Shimada ,  Tomihiro Amano

IPC分类号： H01J37/32 ,  G03F7/42 ,  H01L21/311

CPC分类号： H01J37/32458 ,  G03F7/427 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32633 ,  H01L21/31138

摘要： A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

公开(公告)号：US20240071731A1

公开(公告)日：2024-02-29

申请号：US18495738

申请日：2023-10-26

申请人： LINCO TECHNOLOGY CO., LTD.

发明人： Yi-Yuan HUANG ,  Yi-Cheng LIU

IPC分类号： H01J37/32 ,  H01J37/305 ,  H01L21/3065 ,  H01L21/67

CPC分类号： H01J37/32633 ,  H01J37/3053 ,  H01J37/32458 ,  H01J37/32513 ,  H01J37/32623 ,  H01L21/3065 ,  H01L21/67069

摘要： A substrate processing apparatus, comprising: a processing chamber having a plasma intake wall configured to receive plasma from a remote plasma source (RPS) and a surrounding wall having an inner surface defining an interior volume for receiving a substrate; and a substrate support having a substrate supporting surface facing the plasma intake wall and elevatably arranged in the interior volume of the processing chamber. The surrounding wall, in a cross-section of the processing chamber, includes: a first segment having a first width associated with a processing region for the substrate support; a second segment having a width greater than the first width that is further away from the plasma intake wall than the first segment.

公开(公告)号：US11814716B2

公开(公告)日：2023-11-14

申请号：US16698448

申请日：2019-11-27

申请人： Applied Materials, Inc.

发明人： Fang Ruan ,  Prashant Kumar Kulshreshtha ,  Jiheng Zhao ,  Diwakar Kedlaya

IPC分类号： C23C16/455 ,  H01J37/32 ,  H01L21/3213

CPC分类号： C23C16/45565 ,  H01J37/32449 ,  H01J37/32633 ,  H01L21/32136

摘要： Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface of the faceplate and the substrate support may at least partially define a processing region within the semiconductor processing chamber. The faceplate may be characterized by a central axis, and the faceplate may define a plurality of apertures through the faceplate. The faceplate may define a central recess about the central axis extending from the second surface of the faceplate to a depth less than a thickness of the faceplate.

公开(公告)号：US11804366B2

公开(公告)日：2023-10-31

申请号：US17402398

申请日：2021-08-13

申请人： TOKYO ELECTRON LIMITED

发明人： Yuki Hosaka ,  Yoshihiro Umezawa ,  Toshiki Nakajima

IPC分类号： H01J37/32 ,  H01L21/67 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/311

CPC分类号： H01J37/32633 ,  C23C16/4412 ,  C23C16/45587 ,  C23C16/45589 ,  C23C16/45591 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/6719 ,  H01L21/67069 ,  H01J2237/334

摘要： A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.

公开(公告)号：US11756769B2

公开(公告)日：2023-09-12

申请号：US17220982

申请日：2021-04-02

申请人： TOKYO ELECTRON LIMITED

发明人： Takashi Tohara ,  Naokazu Furuya ,  Yosuke Tamuro ,  Yuzuru Sakai

IPC分类号： H01J37/32

CPC分类号： H01J37/32183 ,  H01J37/32633 ,  H01J37/32651 ,  H01J37/32715

摘要： A plasma processing apparatus includes: a chamber accommodating a plurality of substrates; a plurality of substrate supports provided inside the chamber and configured to support a substrate; a plurality of radio-frequency power sources provided corresponding to the plurality of substrate supports, and configured to supply radio-frequency power to the plurality of substrate supports, respectively; and a plurality of shields configured to compart the inside of the chamber and provided corresponding to the plurality of substrate supports to define a processing space where plasma is generated. A radio-frequency current path is formed between the plurality of shields so as not to interfere with one another.

公开(公告)号：US11742183B2

公开(公告)日：2023-08-29

申请号：US17531348

申请日：2021-11-19

申请人： Tokyo Electron Limited

发明人： Ryuji Hisatomi ,  Chishio Koshimizu ,  Michishige Saito

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC分类号： H01J37/32146 ,  H01J37/32009 ,  H01J37/32183 ,  H01J37/32724 ,  H01J37/32467 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32651 ,  H01J2237/002 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6833

摘要： A plasma processing apparatus includes: a processing container; an electrode that places a substrate thereon within the processing container; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies bias power to the electrode; a part exposed to the plasma in the processing container; a DC power supply that supplies a DC voltage to the part; a controller that executes a process including a first control procedure in which a first state in which the DC voltage has a first voltage value and a second state in which the DC voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied in a partial period in each cycle of a potential of the electrode, and the second voltage value is applied such that the first state and the second state are continuous.