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1.发明申请公开(公告)号：US20180308670A1
公开(公告)日：2018-10-25
申请号：US15899634
申请日：2018-02-20
发明人： ANTHONY WILBY , STEVE BURGESS , IAN MONCRIEFF , CLIVE WIDDICKS , SCOTT HAYMORE , RHONDA HYNDMAN
IPC分类号： H01J37/34 , C23C14/35 , C23C14/34 , H01L21/285 , H01L21/768
CPC分类号： H01J37/3408 , C23C14/345 , C23C14/351 , C23C14/50 , C23C14/505 , H01J37/32669 , H01J37/32715 , H01J37/3405 , H01J37/3452 , H01J37/3485 , H01L21/2855 , H01L21/76877
摘要： A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.
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公开(公告)号：US20180269044A1
公开(公告)日：2018-09-20
申请号：US15463159
申请日：2017-03-20
发明人： Stephen L. Brown , Bruce B. Doris , Mark C. Reuter
CPC分类号： H01J37/3485 , C23C14/24 , C23C14/3414 , H01J37/32 , H01J37/3426 , H01J37/3447 , H01J2237/0203 , H01J2237/081 , H01J2237/3322
摘要： A deposition tool includes a vacuum chamber and a physical vapor deposition module including a target source in the vacuum chamber. The target source includes a target material for depositing on a workpiece. An evaporator module is independent of the physical vapor deposition module and is mounted within an enclosure in the vacuum chamber. A gate is configured to selectively open the enclosure to permit evaporation of a coating element to coat the target source in the physical vapor deposition module.
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公开(公告)号：US11961722B2
公开(公告)日：2024-04-16
申请号：US18074496
申请日：2022-12-04
发明人： Anthony Wilby , Steve Burgess , Ian Moncrieff , Clive Widdicks , Scott Haymore , Rhonda Hyndman
IPC分类号： H01J37/34 , B81B3/00 , C23C14/34 , C23C14/35 , C23C14/50 , H01J37/32 , H01L21/02 , H01L21/285 , H01L21/768
CPC分类号： H01J37/3408 , B81B3/0072 , C23C14/345 , C23C14/3471 , C23C14/351 , C23C14/50 , C23C14/505 , H01J37/32669 , H01J37/32715 , H01J37/3452 , H01J37/3467 , H01J37/347 , H01J37/3485 , H01L21/02178 , H01L21/02266 , H01L21/2855 , H01L21/76877 , B81C2201/017 , B81C2201/0181
摘要： A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.
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公开(公告)号：US20160247667A1
公开(公告)日：2016-08-25
申请号：US15045639
申请日：2016-02-17
发明人： Yohsuke Shibuya
CPC分类号： H01J37/3476 , B08B7/00 , C23C14/3407 , C23C14/3414 , C23C14/35 , C23C14/564 , H01J37/3405 , H01J37/3455 , H01J37/3461 , H01J37/3482 , H01J37/3485
摘要： The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit to change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.
摘要翻译： 本发明提供一种能够确定目标的表面状态以执行对必要部件的准确和快速清洁的装置。 该装置包括：能够在目标表面上形成磁场的磁体单元; 能够驱动磁体单元来改变磁场图形的旋转系统; 以及电流计，被配置为当由磁体单元形成磁场时测量目标电流，并且对目标附着的目标电极施加放电电压。 通过旋转系统不同地改变磁体单元的位置，并且在每个位置测量目标电流并与参考值进行比较。 然后确定是否需要在每个位置进行清洁，从而可以仅对必需的部分执行清洁。
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公开(公告)号：US20180269045A1
公开(公告)日：2018-09-20
申请号：US15806454
申请日：2017-11-08
发明人： Stephen L. Brown , Bruce B. Doris , Mark C. Reuter
CPC分类号： H01J37/3485 , C23C14/24 , C23C14/3414 , H01J37/32 , H01J37/3426 , H01J37/3447 , H01J2237/0203 , H01J2237/081 , H01J2237/3322
摘要： A deposition tool includes a vacuum chamber and a physical vapor deposition module including a target source in the vacuum chamber. The target source includes a target material for depositing on a workpiece. An evaporator module is independent of the physical vapor deposition module and is mounted within an enclosure in the vacuum chamber. A gate is configured to selectively open the enclosure to permit evaporation of a coating element to coat the target source in the physical vapor deposition module.
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6.发明授权Substrate holding apparatus, mask alignment method, and vacuum processing apparatus using long taper pins and short taper pins for alignment 有权基板保持装置，掩模对准方法和使用长锥销和用于对准的短锥销的真空处理装置公开(公告)号：US09082803B2
公开(公告)日：2015-07-14
申请号：US12850706
申请日：2010-08-05
申请人： Yoshimitu Shimane , Nobuo Yamaguchi
发明人： Yoshimitu Shimane , Nobuo Yamaguchi
CPC分类号： H01L21/682 , C23C14/042 , H01J37/3405 , H01J37/3447 , H01J37/3485
摘要： A mask alignment method for a substrate holding apparatus. A first engaging portion is formed in one of a substrate holder and a mask and has two protruding portions. A second engaging portion is formed in the other one of the substrate holder and the mask and has at least one protruding portion. First groove portions formed in the other one of the substrate holder and the mask engage with the protruding portions of the first engaging portion. A second groove portion formed in the other one of the substrate holder and the mask engages with the protruding portion of the second engaging portion. The mask alignment method includes the steps of (a) engaging the protruding portions of the first engaging portion with the first groove portions to align the mask with respect to the substrate holder in a first direction, and (b) engaging, after the step of engaging the protruding portions of the first engaging portion with the first groove portions, the protruding portion of the second engaging portion with the second groove portion, to align the mask with respect to the substrate holder in a direction perpendicular to the first direction.
摘要翻译： 一种用于基板保持装置的掩模对准方法。 第一接合部分形成在衬底保持器和掩模之一中，并且具有两个突出部分。 第二接合部分形成在衬底保持器和掩模中的另一个中，并且具有至少一个突出部分。 形成在另一个基板保持器和掩模中的第一槽部与第一接合部的突出部接合。 形成在另一个基板保持器和掩模中的第二槽部与第二接合部的突出部接合。 掩模对准方法包括以下步骤：（a）将第一接合部分的突出部分与第一凹槽部分接合，以使掩模相对于基板保持器沿第一方向对准，并且（b）在步骤 将第一接合部分的突出部分与第一凹槽部分接合，第二接合部分的突出部分与第二凹槽部分相对于基板保持器在垂直于第一方向的方向上对准掩模。
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公开(公告)号：US07575661B2
公开(公告)日：2009-08-18
申请号：US10898956
申请日：2004-07-27
申请人： Yasuyuki Suzuki , Koji Teranishi
发明人： Yasuyuki Suzuki , Koji Teranishi
IPC分类号： C23C14/35
CPC分类号： H01J37/3485 , C23C14/0057 , C23C14/0068 , C23C14/0694 , C23C14/35 , F02D41/1456 , H01J37/3405 , Y02T50/67
摘要： In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.
摘要翻译： 在反应性溅射装置中，惰性气体供给孔设置在其一端敞开并且其电导被控制的可动目标单元中，并且至少含有氟或氧的反应性气体可以供应到靶和 底物。 该装置被构造成朝向基板发射反应性气体。 反应气体发射位置在靶和衬底之间的空间中，使得衬底表面上的反应气体的浓度可以保持在更高的水平。 当目标移动时，移动反应气体发射端口或改变反应气体发射位置。 可以有效地保持基板表面上的反应气体的浓度恒定，并且可以形成高质量的光学薄膜。
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公开(公告)号：US20090200159A1
公开(公告)日：2009-08-13
申请号：US12415259
申请日：2009-03-31
申请人： Yasuyuki Suzuki , Koji Teranishi
发明人： Yasuyuki Suzuki , Koji Teranishi
IPC分类号： C23C14/34
CPC分类号： H01J37/3485 , C23C14/0057 , C23C14/0068 , C23C14/0694 , C23C14/35 , F02D41/1456 , H01J37/3405 , Y02T50/67
摘要： In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.
摘要翻译： 在反应性溅射装置中，惰性气体供给孔设置在其一端敞开并且其电导被控制的可动目标单元中，并且至少含有氟或氧的反应性气体可以供应到靶和 底物。 该装置被构造成朝向基板发射反应性气体。 反应气体发射位置在靶和衬底之间的空间中，使得衬底表面上的反应气体的浓度可以保持在更高的水平。 当目标移动时，移动反应气体发射端口或改变反应气体发射位置。 可以有效地保持基板表面上的反应气体的浓度恒定，并且可以形成高质量的光学薄膜。
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公开(公告)号：US20170053784A1
公开(公告)日：2017-02-23
申请号：US15240927
申请日：2016-08-18
发明人： Anantha K. SUBRAMANI , Hanbing WU , Wei W. WANG , Ashish GOEL , Srinivas GUGGILLA , Lavinia NISTOR
CPC分类号： H01J37/3417 , C23C14/3464 , C23C14/564 , H01J37/32871 , H01J37/3429 , H01J37/3441 , H01J37/3447 , H01J37/3464 , H01J37/3485
摘要： Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.
摘要翻译： 本文提供了用于共溅射多个靶材料的方法和装置的实施例。 在一些实施例中，包括用于支撑衬底的衬底支撑件的处理室; 耦合到载体并且具有相应的多个靶以溅射到所述衬底上的多个阴极; 以及耦合到所述载体并在所述多个靶的相邻对之间延伸的过程屏蔽。
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公开(公告)号：US20160083832A1
公开(公告)日：2016-03-24
申请号：US14958138
申请日：2015-12-03
发明人： Munehito CHATANI , Hitoshi SEKI , Atsushi MORI
IPC分类号： C23C14/00
CPC分类号： C23C14/0042 , C23C14/0063 , C23C14/0094 , H01J37/3485
摘要： A compound thin film is obtained with a high deposition rate and consistent film quality in reactive sputtering. A thin film is formed by performing voltage monitoring control and gas flow rate monitoring control. The voltage monitoring control is control in which a gas flow rate is adjusted such that the value of a target voltage is brought closer to the value of a desired voltage by monitoring the target voltage in a first cycle time. The gas flow rate monitoring control is control in which the desired voltage for the target voltage is changed such that the value of the gas flow rate is brought closer to the value of a desired gas flow rate by monitoring the gas flow rate in a second cycle time.
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