中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

131 records (took 0.03 seconds)

    Light emitting diode display with redundancy scheme
    92.
    发明授权
    Light emitting diode display with redundancy scheme 有权
    具有冗余方案的发光二极管显示

    公开(公告)号：US08791474B1

    公开(公告)日：2014-07-29

    申请号：US13842879

    申请日：2013-03-15

    Applicant: LuxVue Technology Corporation

    Inventor： Andreas Bibl ,  Kapil V. Sakariya ,  Charles R. Griggs ,  James Michael Perkins

    IPC: H01L29/20

    CPC classification number: G09G3/2003 ,  G09G3/3208 ,  G09G2300/0426 ,  G09G2330/021 ,  G09G2330/08 ,  H01L25/0753 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

    Abstract translation: 描述了显示面板和制造方法。 在一个实施例中，显示基板包括像素区域和非像素区域。 子像素阵列和相应的底电极阵列位于像素区域中。 微型LED器件的阵列结合到底部电极阵列。 形成与微型LED器件的阵列电接触的一个或多个顶部电极层。 在一个实施例中，冗余的一对微型LED器件被结合到底部电极阵列。 在一个实施例中，微型LED器件的阵列被成像以检测不规则。

    COMPLIANT MICRO DEVICE TRANSFER HEAD ARRAY WITH METAL ELECTRODES
    95.
    发明申请
    COMPLIANT MICRO DEVICE TRANSFER HEAD ARRAY WITH METAL ELECTRODES 有权
    具有金属电极的合适的微型器件传输头阵列

    公开(公告)号：US20140159324A1

    公开(公告)日：2014-06-12

    申请号：US13710442

    申请日：2012-12-10

    Applicant: LUXVUE TECHNOLOGY CORPORATION

    Inventor： Dariusz Golda ,  Andreas Bibl

    IPC: B23Q3/15 ,  H02N13/00

    CPC classification number: H02N13/00 ,  B81C99/002 ,  Y10T279/23

    Abstract: Compliant monopolar and bipolar micro device transfer head arrays and methods of formation from SOI substrates are described. In an embodiment, an array of compliant transfer heads are formed over a base substrate and deflectable toward the base substrate, and a patterned metal layer includes a metal interconnect layer electrically connected with an array of the metal electrodes in the array of compliant transfer heads.

    Abstract translation: 描述了合适的单极和双极微器件转移头阵列和从SOI衬底形成的方法。 在一个实施例中，柔性传送头阵列形成在基底基板上并且可朝向基底基板偏转，并且图案化金属层包括金属互连层，金属互连层与柔性传送头阵列中的金属电极阵列电连接。

    COMPLIANT MONOPOLOAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE
    99.
    发明申请
    COMPLIANT MONOPOLOAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE 有权
    合适的单极微型器件传输头与硅电极

    公开(公告)号：US20140008813A1

    公开(公告)日：2014-01-09

    申请号：US13828117

    申请日：2013-03-14

    Applicant: LUXVUE TECHNOLOGY CORPORATION

    Inventor： Dariusz Golda ,  Andreas Bibl

    IPC: H01L23/538

    CPC classification number: B32B38/18 ,  B81C99/002 ,  H01L21/6835 ,  H01L23/5384 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2924/0002 ,  Y10T156/17 ,  H01L2924/00

    Abstract: A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.

    Abstract translation: 描述了一种兼容的单极微器件传输头阵列和从SOI衬底形成兼容单极微器件传输阵列的方法。 在一个实施例中，微器件转移头阵列包括基底衬底和在基底衬底上的图案化硅层。 图案化硅层可以包括硅互连和与硅互连电连接的硅电极阵列。 每个硅电极包括在硅互连上方突出的台面结构，并且每个硅电极可偏转到基底基板和硅电极之间的空腔中。 介电层覆盖每个台面结构的顶面。

Patent Agency Ranking