Abstract:
This disclosure describes a novel .method and apparatus for testing TSVs within a semiconductor device. According to embodiments illustrated and described in the disclosure, a TSV may be tested by stimulating and measuring a response from a first end of a TSV while the second end of the TSV held at ground potential. Multiple TSVs within the semiconductor device may be tested in parallel to reduce the TSV testing time according to the disclosure.
Abstract:
This disclosure describes a novel method and apparatus for testing TSVs within a semiconductor device. According to embodiments illustrated and described in the disclosure, a TSV may be tested by stimulating and measuring a response from a first end of a TSV while the second end of the TSV held at ground potential. Multiple TSVs within the semiconductor device may be tested in parallel to reduce the TSV testing time according to the disclosure.
Abstract:
Described examples include an integrated circuit having an analog-to-digital converter operable to receive an input signal derived from a light signal and convert the input signal to a digital received signal, the analog-to-digital converter operable to receive the input signal during at least one window. The integrated circuit further has a receiver operable to receive the digital received signal, the receiver operable to determine a distance estimate of an object from which the light signal is reflected based on the digital received signal. In an example, the window locations are chosen to correspond to the locations of maximum slope in the signal.
Abstract:
Described examples include an integrated circuit that includes an encoder configured to modulate a driving signal for an optical transmitter with a plurality of encoded pulses corresponding to a code, in which the driving signal is transmitted to the optical transmitter periodically. The integrated circuit also includes a demodulator configured to receive a received signal from an optical receiver that is configured to receive a reflection of light transmitted by the optical transmitter off an object, the demodulator configured to discriminate the plurality of encoded pulses in the received signal and estimate a distance of the object.
Abstract:
Described example aspects include an integrated circuit includes a timing controller configured to select a selected time slot in a measurement period having a plurality of time slots and a transmit driver configured to provide a transmit signal in accordance with the selected time slot, in which the transmit signal is transmitted to an optical transmitter. The integrated circuit also includes a range estimator configured to receive a received signal after the selected time slot from an optical receiver that is configured to receive a reflection of light transmitted by the optical transmitter off an object, the range estimator configured to determine an estimated distance of the object based on the received signal.
Abstract:
The systems and methods of oscillator frequency tuning using a bulk acoustic wave resonator include a relaxation oscillator, a BAW oscillator, a frequency counter, and an adjustment module. The BAW oscillator provides an accurate time reference even over temperature changes. The BAW oscillator is turned on periodically and the relaxation oscillator is calibrated with the BAW oscillator. A temporary and periodic enablement of the BAW oscillator maintains a low current consumption. The frequency counter counts a number of full periods of the BAW oscillator that occur in one period of the relaxation oscillator. Since each frequency is known, the number of pulses of the BAW oscillator that should occur during one period of the relaxation oscillator is known. If the count is different from what should be counted, a correction may be made by adjusting an input parameter of the relaxation oscillator.
Abstract:
A relaxation oscillator reduces temperature sensitivity and phase noise at low offset frequency by periodically swapping a first current and a second current so that after the first current has been input to a first pair of circuits and the second current has been input to a second pair of circuits, the second current is input to the first pair of circuits and the first current is input to the second pair of circuits.
Abstract:
In some developing interconnect technologies, such as chip-to-chip optical interconnect or metal waveguide interconnects, misalignment can be a serious issue. Here, however, a interconnect that uses an on-chip directional antenna (which operates in the sub-millimeter range) to form a radio frequency (RF) interconnect through a dielectric waveguide is provided. This system allows for misalignment while providing the increased communication bandwidth.
Abstract:
IEEE 1149.1 Test Access Ports (TAPs) may be utilized at both IC and intellectual property core design levels. TAPs serve as serial communication ports for accessing a variety of embedded circuitry within ICs and cores including; IEEE 1149.1 boundary scan circuitry, built in test circuitry, internal scan circuitry, IEEE 1149.4 mixed signal test circuitry, IEEE P5001 in-circuit emulation circuitry, and IEEE P1532 in-system programming circuitry. Selectable access to TAPs within ICs is desirable since in many instances being able to access only the desired TAP(s) leads to improvements in the way testing, emulation, and programming may be performed within an IC. A TAP linking module is described that allows TAPs embedded within an IC to be selectively accessed using 1149.1 instruction scan operations.
Abstract:
Self-grounded circuitry (10) includes a signal channel conducting an output voltage (VOUT1). A charge pump (2) powered by a reference voltage (VDD) produces a control voltage (VCP). The control signal is at a low level if the reference voltage is low and is boosted to a high level if the reference voltage is high. A ground switch circuit (15) includes a depletion mode transistor (MP1) having a source coupled to the output voltage, a gate coupled to the control voltage, and a drain coupled to ground. The transistor includes a well region (4-1) and a parasitic substrate diode (D3-1). A negative voltage protection circuit (17-1) includes a depletion mode first protection transistor (MP3-1) having a drain coupled to the well region, a source coupled to a source of a depletion mode second protection transistor (MP4-1) having a drain coupled to the output voltage, the first and second protection transistors each having a gate coupled to the control voltage, and also includes a diode (MN1) coupled to charge the well region from the control voltage conductor to prevent distortion of the output voltage.