公开(公告)号：US08258493B2

公开(公告)日：2012-09-04

申请号：US12515379

申请日：2007-11-13

申请人： Takumi Mikawa ,  Takeshi Takagi

发明人： Takumi Mikawa ,  Takeshi Takagi

IPC分类号： H01L29/00

CPC分类号： H01L27/101 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/0688 ,  H01L27/112 ,  H01L27/115 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1683

摘要： A nonvolatile semiconductor memory apparatus (10) of the present invention comprises a substrate (10), lower-layer electrode wires (15) provided on the substrate (11), an interlayer insulating layer (16) which is disposed on the substrate (11) including the lower-layer electrode wires (15) and is provided with contact holes at locations respectively opposite to the lower-layer electrode wires (15), resistance variable layers (18) which are respectively connected to the lower-layer electrode wires (15); and non-ohmic devices (20) which are respectively provided on the resistance variable layers (18) such that the non-ohmic devices are respectively connected to the resistance variable layers (18). The non-ohmic devices (20) each has a laminated-layer structure including plural semiconductor layers, a laminated-layer structure including a metal electrode layer and an insulator layer, or a laminated-layer structure including a metal electrode layer and a semiconductor layer. One layer of the laminated-layer structure is embedded to fill each of the contact holes and the semiconductor layer or the insulator layer which is the other layer of the laminated-layer structure has a larger area than an opening of each of the contact holes and is provided on the interlayer insulating layer (16).

摘要翻译： 本发明的非易失性半导体存储装置（10）具备基板（10），设置在基板（11）上的下层电极布线（15），设置在基板（11）上的层间绝缘层（16） ），并且在分别与下层电极线（15）相对的位置设置接触孔，电阻变化层（18）分别与下层电极线（15）连接 15）; 和非欧姆器件（20），其分别设置在电阻变化层（18）上，使得非欧姆器件分别连接到电阻变化层（18）。 非欧姆装置（20）各自具有包括多个半导体层的层叠层结构，包括金属电极层和绝缘体层的层叠层结构，或者包括金属电极层和半导体层的层叠层结构 。 嵌入层叠层结构的一层以填充每个接触孔，作为层叠层结构的另一层的半导体层或绝缘体层的面积比每个接触孔的开口大， 设置在层间绝缘层（16）上。

公开(公告)号：US08093578B2

公开(公告)日：2012-01-10

申请号：US12513638

申请日：2007-11-16

申请人： Takeshi Takagi ,  Takumi Mikawa

发明人： Takeshi Takagi ,  Takumi Mikawa

IPC分类号： H01L27/10 ,  H01L21/02

CPC分类号： H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1683

摘要： The present invention is configured such that a resistance variable element (16) and a rectifying element (20) are formed on a substrate (12). The resistance variable element (16) is configured such that a resistance variable layer (14) made of a metal oxide material is sandwiched between a lower electrode (13) and an upper electrode (15). The rectifying element (20) is connected to the resistance variable element (16), and is configured such that a blocking layer (18) is sandwiched between a first electrode layer (17) located on a lower side of the blocking layer (18) and a second electrode layer (19) located on an upper side of the blocking layer (18). The resistance variable element (16) and the rectifying element (20) are connected to each other in series in a thickness direction of the resistance variable layer (14), and the blocking layer (18) is formed as a barrier layer having a hydrogen barrier property.

摘要翻译： 本发明被构造成使得在基板（12）上形成电阻可变元件（16）和整流元件（20）。 电阻可变元件（16）被构造为使得由金属氧化物材料制成的电阻变化层（14）夹在下电极（13）和上电极（15）之间。 整流元件（20）连接到电阻可变元件（16），并且被构造为使阻挡层（18）夹在位于阻挡层（18）的下侧的第一电极层（17）之间， 以及位于阻挡层（18）的上侧的第二电极层（19）。 电阻可变元件（16）和整流元件（20）在电阻变化层（14）的厚度方向上串联连接，并且阻挡层（18）形成为具有氢的阻挡层 屏障属性。

公开(公告)号：US20110174708A1

公开(公告)日：2011-07-21

申请号：US13121872

申请日：2009-10-02

申请人： Shin-ichi Oota ,  Hidenari Yamagata ,  Takeshi Takagi ,  Koji Egawa

发明人： Shin-ichi Oota ,  Hidenari Yamagata ,  Takeshi Takagi ,  Koji Egawa

IPC分类号： B01F9/00 ,  B01D15/08 ,  B01L9/00

CPC分类号： G01N35/1097 ,  B01F11/0002 ,  B01F11/0037 ,  B01L9/06 ,  B01L2300/0851 ,  G01N30/06 ,  G01N2035/00524

摘要： A sample stirring device of the present invention includes a driving roller and two follower rollers for coming into contact with a sample container including a cylindrical portion for containing a sample to be stirred. The driving roller is driven for rotation to stir the sample contained in the sample container. The two follower rollers have rotation axes inclined with respect to an axial direction of the cylindrical portion. This arrangement allows the sample container such as a blood collection tube to be rotated stably.

摘要翻译： 本发明的样品搅拌装置包括驱动辊和两个从动辊，用于与包括用于容纳待搅拌样品的圆筒部分的样品容器接触。 驱动辊被驱动旋转以搅拌包含在样品容器中的样品。 两个从动辊具有相对于圆筒部的轴向倾斜的旋转轴。 这种布置允许诸如采血管的样品容器能够稳定地旋转。

公开(公告)号：US07801186B2

公开(公告)日：2010-09-21

申请号：US11952647

申请日：2007-12-07

申请人： Sugio Wako ,  Atsushi Koyama ,  Xiongfei Zhang ,  Hiroshi Matsuura ,  Satoru Abe ,  Takeshi Takagi

发明人： Sugio Wako ,  Atsushi Koyama ,  Xiongfei Zhang ,  Hiroshi Matsuura ,  Satoru Abe ,  Takeshi Takagi

IPC分类号： H01S3/30

CPC分类号： H01S3/09415 ,  G01N2201/06113 ,  G02B6/29317 ,  G02B6/29358 ,  H01S3/06708 ,  H01S3/0675 ,  H01S3/08036 ,  H01S3/1062 ,  H01S3/1618

摘要： A spatial coupling provided between an amplified-light waveguide and an output-light waveguide includes a wavelength selecting element that selectively transmits a light having a desired wavelength band out of a spontaneous emission light generated in the amplified-light waveguide and a lens unit that couples the spontaneous emission light to the wavelength selecting unit. An input-side light reflecting unit provided between a semiconductor pumping laser and the amplified-light waveguide and an output-side light reflecting unit formed on an output side of the spatial coupling unit form a laser resonator.

摘要翻译： 提供在放大光波导和输出光波导之间的空间耦合包括波长选择元件，其选择性地透射在放大光波导中产生的自发发射光中具有期望波长带的光;以及透镜单元，其耦合 对波长选择单元的自发发射光。 设置在半导体泵浦激光器和放大光波导之间的输入侧光反射单元和形成在空间耦合单元的输出侧的输出侧光反射单元形成激光谐振器。

公开(公告)号：US20100200432A1

公开(公告)日：2010-08-12

申请号：US12449732

申请日：2008-02-24

申请人： Tatsuo Kamata ,  Takeshi Takagi

发明人： Tatsuo Kamata ,  Takeshi Takagi

IPC分类号： G01N27/26 ,  C01B21/08

CPC分类号： C12Q1/006 ,  C12Q1/28

摘要： The present invention relates to a method, a reagent and an apparatus for determining a substrate concentration based on an amount of hydrogen peroxide generated from a substrate. In the present invention, a suppressing agent for suppressing a reaction between the hydrogen peroxide and an inhibitor is added. As the suppressing agent, an azide compound such as sodium azide or a nitrite compound such as sodium nitrite is used. In the invention, a supporting electrolyte, such as sodium chloride or potassium chloride may be further added.

摘要翻译： 本发明涉及一种基于从基底产生的过氧化氢量来确定底物浓度的方法，试剂和装置。 在本发明中，添加抑制过氧化氢与抑制剂的反应的抑制剂。 作为抑制剂，可以使用叠氮化钠等叠氮化合物，亚硝酸钠等亚硝酸酯化合物。 在本发明中，可以进一步添加氯化钠或氯化钾等担载电解质。

公开(公告)号：US07729866B2

公开(公告)日：2010-06-01

申请号：US11666055

申请日：2005-10-25

申请人： Koji Sugiyama ,  Takeshi Takagi

发明人： Koji Sugiyama ,  Takeshi Takagi

IPC分类号： G01N33/49 ,  G01N27/327 ,  C12Q1/26

CPC分类号： G01N27/3271

摘要： The present invention relates to a method for measuring the concentration of a particular component in a blood sample containing blood cells based on a variable correlated with the concentration of the particular component. In the present invention, a concentration (S) in blood plasma obtained by removing blood cell components from the blood sample, a concentration (DI) in the blood sample computed by a differential method and a concentration (EP) in the blood sample computed by an equilibrium point method are expressed by a relational expression which is unrelated to the proportion of the blood cell components in the blood sample, and the concentration of the particular component is computed by using the relational expression.

摘要翻译： 本发明涉及基于与特定成分的浓度相关的变量来测定含有血细胞的血液样品中特定成分的浓度的方法。 在本发明中，通过从血液样品中除去血细胞成分而获得的血浆中的浓度（S），通过微分法计算的血液样品中的浓度（DI）和血液样品中的浓度（EP） 平衡点法由与血样中血细胞成分比例无关的关系表达式表示，特定成分的浓度用关系式计算。

公开(公告)号：US20090014710A1

公开(公告)日：2009-01-15

申请号：US12281034

申请日：2007-03-06

申请人： Yoshio Kawashima ,  Takeshi Takagi ,  Takumi Mikawa ,  Zhiqiang Wei

发明人： Yoshio Kawashima ,  Takeshi Takagi ,  Takumi Mikawa ,  Zhiqiang Wei

IPC分类号： H01L45/00

CPC分类号： H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1658 ,  H01L45/1675

摘要： A lower electrode layer 2, an upper electrode layer 4 formed above the lower electrode layer 2, and a metal oxide thin film layer 3 formed between the lower electrode layer 2 and the upper electrode layer 4 are provided. The metal oxide thin film layer 3 includes a first region 3a whose value of resistance increases or decreases by an electric pulse that is applied between the lower electrode layer 2 and the upper electrode layer 4 and a second region 3b arranged around the first region 3a and having a larger content of oxygen than the first region 3a, wherein the lower and upper electrode layers 2 and 4 and at least a part of the first region 3a are arranged so as to overlap as viewed from the direction of the thickness of the first region 3a.

摘要翻译： 设置下电极层2，形成在下电极层2上的上电极层4和形成在下电极层2和上电极层4之间的金属氧化物薄膜层3。 金属氧化物薄膜层3包括第一区域3a，其第一区域3a的电阻值通过施加在下电极层2和上电极层4之间的电脉冲和围绕第一区域3a布置的第二区域3b而增大或减小，以及 具有比第一区域3a更大的氧含量，其中下电极层2和上电极层4以及第一区域3a的至少一部分从第一区域的厚度方向观察而重叠 3a。

公开(公告)号：US07235830B2

公开(公告)日：2007-06-26

申请号：US11260197

申请日：2005-10-28

申请人： Haruyuki Sorada ,  Takeshi Takagi ,  Akira Asai ,  Akira Inoue

发明人： Haruyuki Sorada ,  Takeshi Takagi ,  Akira Asai ,  Akira Inoue

IPC分类号： H01L29/76

CPC分类号： H01L29/78696 ,  H01L21/76264 ,  H01L21/76281 ,  H01L29/1054 ,  H01L29/66742 ,  H01L29/78687 ,  Y10S438/933 ,  Y10S438/938

摘要： The present invention provides a semiconductor device comprising: a semiconductor layer (3); a gate electrode (11) formed on the semiconductor layer (3) via a gate insulation film (10); and a first insulation film (13) formed at one or more of sidewalls of the semiconductor layer (3), the gate insulation film (10) and the gate electrode (11); wherein the first insulation film (13) overlies a part of the gate insulation film (10) surface. According to the semiconductor device, leakage current at the isolation edge can be suppressed and thus reliability can be improved.

摘要翻译： 本发明提供一种半导体器件，包括：半导体层（3）; 经由栅极绝缘膜（10）形成在所述半导体层（3）上的栅电极（11）; 以及形成在所述半导体层（3），所述栅极绝缘膜（10）和所述栅电极（11）的侧壁的一个或多个的第一绝缘膜（13）。 其中所述第一绝缘膜（13）覆盖所述栅极绝缘膜（10）表面的一部分。 根据半导体装置，可以抑制隔离边缘处的漏电流，从而可以提高可靠性。

公开(公告)号：US07170110B2

公开(公告)日：2007-01-30

申请号：US10983610

申请日：2004-11-09

申请人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

发明人： Akira Inoue ,  Takeshi Takagi ,  Yoshihiro Hara ,  Minoru Kubo

IPC分类号： H01L29/161 ,  H01L29/772

CPC分类号： H01L29/802 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/092 ,  H01L27/10873 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1222 ,  H01L28/55 ,  H01L29/1054 ,  H01L29/783 ,  H01L29/78687

摘要： A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.

摘要翻译： 依次沉积硅衬底101上的氧化硅膜102，Pt膜103x，Ti膜104x和PZT膜105x。 将Si衬底101放置在室106中，使得PZT膜105x被EHF波108照射。 用EHF波照射局部加热电介质膜，例如PZT膜。 结果，可以改善例如电介质膜的泄漏特性，而不会对形成在Si衬底101上的器件产生不利影响。

公开(公告)号：US07133626B2

公开(公告)日：2006-11-07

申请号：US10902790

申请日：2004-08-02

申请人： Miho Kaiga ,  Takeshi Takagi

发明人： Miho Kaiga ,  Takeshi Takagi

IPC分类号： G03G15/00 ,  H02J1/00

CPC分类号： G03G7/00 ,  G03G7/0053 ,  G03G21/1628 ,  G03G2215/00548 ,  G03G2221/1687

摘要： An image forming apparatus includes an image forming portion for forming an image, an image reading portion for reading an image, displaceable with respect to the image forming portion, and an open/closable member that can be opened or closed with respect to a main body of the image forming portion and displaced toward the image reading portion, wherein the displacement of the open/closable member is effected in relation to the displacement of the image reading portion. In this manner the open/closable member can be opened or closed by a simple operation, without increasing the dimension of the image forming apparatus.

摘要翻译： 图像形成装置包括用于形成图像的图像形成部分，用于读取图像的图像读取部分，可相对于图像形成部分移位;以及打开/关闭部件，其可相对于主体打开或关闭 并且朝向图像读取部分移位，其中打开/关闭部件的位移相对于图像读取部分的位移进行。 以这种方式，可以通过简单的操作来打开或关闭打开/关闭构件，而不增加图像形成装置的尺寸。