Imprint apparatus
    91.
    发明授权

    公开(公告)号:US10073339B2

    公开(公告)日:2018-09-11

    申请号:US14565520

    申请日:2014-12-10

    CPC classification number: G03F7/0002 B29C59/02 B29C59/022 B29C2059/023

    Abstract: The present invention provides an imprint apparatus which performs an imprint process of molding an imprint material on a substrate with a mold and forming a pattern on the substrate, the apparatus including a detector configured to detect a shearing force generated in at least one of the mold and the substrate in a case where a pattern of the mold and a region of the substrate are aligned with each other with the imprint material on the substrate and the mold being in contact with each other, and a controller configured to control the imprint process based on the detected shearing force.

    TEMPLATE FOR IMPRINT LITHOGRAPHY INCLUDING A RECESSION, AN APPARATUS OF USING THE TEMPLATE, AND A METHOD OF FABRICATING AN ARTICLE

    公开(公告)号:US20180174827A1

    公开(公告)日:2018-06-21

    申请号:US15387409

    申请日:2016-12-21

    Inventor: Byung-Jin CHOI

    CPC classification number: H01L21/0273 B29C33/00 B29C59/00 G03F7/0002

    Abstract: A template for imprint lithography can include a body. The body can include a base surface and have a recession extending from the base surface lying along a base plane, the recession including a main portion having a tapered sidewall. In a particular embodiment, the recession includes an intermediate portion having an intermediate sidewall. The intermediate sidewall is rounded or at least part of the intermediate sidewall lies at a different angle as compared to an average tapered angle of the main portion. In another aspect, a method of fabricating a semiconductor device can include forming a patterned resist layer having a tapered sidewall over a substrate having device layers; patterning the device layers using the patterned resist layer; and etching portions of at least some of device layers to expose lateral portions of the at least some device layers. The template is well suited for forming 3D memory arrays.

    ADAPTIVE CHUCKING SYSTEM
    100.
    发明申请

    公开(公告)号:US20180173119A1

    公开(公告)日:2018-06-21

    申请号:US15385189

    申请日:2016-12-20

    CPC classification number: G03F9/7042 G03F7/0002

    Abstract: Methods, systems, and apparatus for of adjusting a shape of an imprint lithography template, including identifying a shape of an active area positioned on a first side of the template, the active area including patterning features; determining a correspondence between a shape of an adaptive chuck and the shape of the active area positioned on the first side of the template, the adaptive chuck coupled to a second side of the template, the second side opposite the first side of the template; and adjusting, by an actuation system coupled to the adaptive chuck, the shape of the adaptive chuck based on the correspondence to obtain a target shape of the active area positioned on the first side of the template.

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