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    ION IMPLANTATION DEVICE AND A METHOD OF SEMICONDUCTOR MANUFACTURING BY THE IMPLANTATION OF IONS DERIVED FROM CARBORANE MOLECULAR SPECIES
    91.
    发明申请
    ION IMPLANTATION DEVICE AND A METHOD OF SEMICONDUCTOR MANUFACTURING BY THE IMPLANTATION OF IONS DERIVED FROM CARBORANE MOLECULAR SPECIES 审中-公开
    离子植入装置和半导体制造方法通过植入从碳氢化合物分子物质衍生的离子

    公开(公告)号：US20080305598A1

    公开(公告)日：2008-12-11

    申请号：US11759768

    申请日：2007-06-07

    Applicant: Thomas N. Horsky ,  Dale C. Jacobson

    Inventor： Thomas N. Horsky ,  Dale C. Jacobson

    IPC: H01L21/26 ,  H01L21/336

    CPC classification number: H01L21/26513 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/082 ,  H01L21/26566 ,  H01L21/2658 ,  H01L29/6659 ,  H01L29/7833

    Abstract: An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized carborane cluster ions are implanted into semiconductor substrates to perform doping of the substrate. The carborane cluster ions have the chemical form C2B10Hx+, C2B8Hx+ and C4B18Hx+and are formed from carborane cluster molecules of the form C2B10H12 ,C2B8H10 and C4B18H22 The use of such carborane molecular clusters results in higher doping concentrations at lower implant energy to provide high dose low energy implants. In accordance with one aspect of the invention, the carborane cluster molecules may be ionized by direct electron impact ionization or by way of a plasma.

    Abstract translation: 描述了离子注入装置和制造半导体器件的方法，其中将离子化的碳硼烷簇离子注入到半导体衬底中以进行衬底的掺杂。 碳硼烷簇离子具有C2B10Hx +，C2B8Hx +和C4B18Hx +的化学形式，并由C2B10H12，C2B8H10和C4B18H22形式的碳硼烷簇分子形成。这种碳硼烷分子簇的使用在较低的注入能量下导致较高的掺杂浓度，以提供高剂量低 能量植入物。 根据本发明的一个方面，碳硼烷簇分子可以通过直接电子轰击电离或通过等离子体离子化。

    Ion implantation ion source, system and method
    96.
    发明授权
    Ion implantation ion source, system and method 失效
    离子注入离子源，系统和方法

    公开(公告)号：US07185602B2

    公开(公告)日：2007-03-06

    申请号：US10887426

    申请日：2004-07-08

    Applicant: Thomas Neil Horsky ,  John Noel Williams

    Inventor： Thomas Neil Horsky ,  John Noel Williams

    IPC: C23C16/00 ,  H01J27/00

    CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

    Abstract: An ion implantation device for vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system and delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source. The ion implantation device includes an ion source which can operate without an arc plasma, which can improve the emittance properties and the purity of the beam and without a strong applied magnetic field, which can improve the emittance properties of the beam. The ion source is configured so that it can be retrofit into the ion source design space of an existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs.

    Abstract translation: 一种离子注入装置，用于通过新颖的蒸发器和蒸气输送系统蒸发十硼烷和其它热敏材料，并输送受控的低压蒸汽蒸汽流。 十硼烷，进入离子源。 离子注入装置包括能够在没有电弧等离子体的情况下工作的离子源，这可以提高光束的发射特性和纯度，并且不会产生强的施加磁场，这可以提高光束的发射特性。 离子源被配置为使得其可以改造成现有的基于伯纳斯源的离子注入器等的离子源设计空间，或以其它方式实现与其它离子源设计的兼容性。

    Resonance method for production of intense low-impurity ion beams of atoms and molecules
    97.
    发明申请
    Resonance method for production of intense low-impurity ion beams of atoms and molecules 有权
    用于生成原子和分子的强低杂质离子束的共振方法

    公开(公告)号：US20070018114A1

    公开(公告)日：2007-01-25

    申请号：US11185141

    申请日：2005-07-20

    Applicant: Kenneth Purser ,  Albert Litherland ,  Norman Turner

    Inventor： Kenneth Purser ,  Albert Litherland ,  Norman Turner

    IPC: H01J27/00

    CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J49/145 ,  H01J2237/0815 ,  H01J2237/31705 ,  H05H3/02

    Abstract: The present invention comprehends a compact and economical apparatus for producing high intensities of a wide variety of wanted positive and negative molecular and atomic ion beams that have been previously impossible to previously produce at useful intensities. In addition, the invention provides a substantial rejection of companion background ions that are frequently simultaneously emitted with the wanted ions. The principle underlying the present invention is resonance ionization-transfer where energy differences between resonant and non-resonant processes are exploited to enhance or attenuate particular charge-changing processes. This new source technique is relevant to the fields of Accelerator Mass Spectroscopy; Molecular Ion Implantation; Generation of Directed Neutral Beams; and Production of Electrons required for Ion Beam Neutralization within magnetic fields. An example having commercial importance is ionization of the decaborane molecule, B10H14 where an almost perfect ionization resonance match occurs between decaborane molecules and arsenic atoms.

    Abstract translation: 本发明包括一种紧凑且经济的装置，用于产生以前不可能以有用强度预先产生的各种各样的所需正，负分子和原子离子束的强度。 此外，本发明提供了与所需离子频繁同时发射的伴随背景离子的显着排除。 本发明的基本原理是谐振电离转移，其中利用共振和非共振过程之间的能量差异来增强或减弱特定的电荷变化过程。 这种新的源技术与加速器质谱技术相关; 分子离子注入 定向中性梁的生成 和磁场中离子束中和所需的电子的生产。 具有商业重要性的实例是十硼烷分子的电离，其中在十硼烷分子和砷原子之间发生几乎完美的电离谐振匹配的B 10 H 14 N 14。

    Ion generation by the temporal control of gaseous dielectric breakdown
    98.
    发明申请
    Ion generation by the temporal control of gaseous dielectric breakdown 失效
    通过气体介质击穿的时间控制产生离子

    公开(公告)号：US20060237662A1

    公开(公告)日：2006-10-26

    申请号：US11271092

    申请日：2005-11-10

    Applicant: Daniel Schlitz

    Inventor： Daniel Schlitz

    IPC: H01T23/00

    CPC classification number: H01T23/00 ,  H01J2237/0815 ,  H05H1/46 ,  H05H2001/2412 ,  H05H2001/4682 ,  H05H2001/4697

    Abstract: An apparatus and method for ion generation are adapted such that an ionization process is controlled temporally, to first initiate, then to halt the breakdown of the gas before a destructive plasma or glow is formed. This method controls the release of energy to the gas in such a manner as to create ions but prevent the heating of the gas. The primary advantages of this ion generation mechanism are its simplicity, efficiency and its ability to create ions at ambient temperature and pressure.

    Abstract translation: 用于离子产生的装置和方法被适配成使得电离过程被暂时控制，以便首先启动，然后在形成破坏性等离子体或辉光之前停止气体的击穿。 该方法控制向气体释放能量，以便产生离子，但是阻止气体的加热。 这种离子发生机理的主要优点是其简便性，效率和在环境温度和压力下产生离子的能力。

    Ion implantation ion source, system and method
    99.
    发明授权
    Ion implantation ion source, system and method 有权
    离子注入离子源，系统和方法

    公开(公告)号：US07112804B2

    公开(公告)日：2006-09-26

    申请号：US10887425

    申请日：2004-07-08

    Applicant: Thomas Neil Horsky ,  John Noel Williams

    Inventor： Thomas Neil Horsky ,  John Noel Williams

    IPC: H01J27/00

    CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

    Abstract: An ion implantation device for vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system and delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source. The ion implantation device includes an ion source which can operate without an arc plasma, which can improve the emittance properties and the purity of the beam and without a strong applied magnetic field, which can improve the emittance properties of the beam. The ion source is configured so that it can be retrofit into the ion source design space of an existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs.

    Abstract translation: 一种离子注入装置，用于通过新颖的蒸发器和蒸气输送系统蒸发十硼烷和其它热敏材料，并输送受控的低压蒸汽蒸汽流。 十硼烷，进入离子源。 离子注入装置包括能够在没有电弧等离子体的情况下工作的离子源，这可以提高光束的发射特性和纯度，并且不会产生强的施加磁场，这可以提高光束的发射特性。 离子源被配置为使得其可以改造成现有的基于伯纳斯源的离子注入器等的离子源设计空间，或以其它方式实现与其它离子源设计的兼容性。

    Dual mode ion source for ion implantation
    100.
    发明申请
    Dual mode ion source for ion implantation 有权
    用于离子注入的双模离子源

    公开(公告)号：US20060097645A1

    公开(公告)日：2006-05-11

    申请号：US11268005

    申请日：2005-11-07

    Applicant: Thomas Horsky

    Inventor： Thomas Horsky

    IPC: H01J7/24

    CPC classification number: C23C14/48 ,  H01J27/026 ,  H01J27/08 ,  H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/0827 ,  H01J2237/31701 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

    Abstract: An ion source is disclosed for providing a range of ion beams consisting of either ionized clusters, such as B2Hx+, B5Hx+, B10Hx+, B18Hx+, P4+ or As4+, or monomer ions, such as Ge+, In+, Sb+, B+, As+, and P+, to enable cluster implants and monomers implants into silicon substrates for the purpose of manufacturing CMOS devices, and to do so with high productivity. The range of ion beams is generated by a universal ion source in accordance with the present invention which is configured to operate in two discrete modes: an electron impact mode, which efficiently produces ionized clusters, and an arc discharge mode, which efficiently produces monomer ions.

    Abstract translation: 公开了一种离子源，用于提供由离子簇组成的一系列离子束，例如B 2 H 2，H 2，SUP 2 +，/ B 2， > 5 + ，B 或B 1，B 3，B 3，...，...，...， 或者单体离子，例如Ge +，Sb +，Sb +，Sb + 为了使集群植入物和单体植入物进入硅衬底以制造CMOS器件，以及 以高生产力这样做。 离子束的范围由根据本发明的通用离子源产生，其被配置为以两种离散模式操作：电子冲击模式，其有效地产生离子簇，以及电弧放电模式，其有效地产生单体离子 。

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