公开(公告)号：US11764233B2

公开(公告)日：2023-09-19

申请号：US17459423

申请日：2021-08-27

申请人： Japan Display Inc.

发明人： Hajime Watakabe ,  Isao Suzumura ,  Akihiro Hanada ,  Yohei Yamaguchi

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L27/1292 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78666

摘要： A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.

公开(公告)号：US11764074B2

公开(公告)日：2023-09-19

申请号：US17011019

申请日：2020-09-03

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Yukinori Shima ,  Masahiko Hayakawa ,  Takashi Hamochi ,  Suzunosuke Hiraishi

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L21/477 ,  H01L21/02 ,  H01L21/28

CPC分类号： H01L21/477 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78606

摘要： To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

公开(公告)号：US20230290870A1

公开(公告)日：2023-09-14

申请号：US17888562

申请日：2022-08-16

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jinhong PARK ,  Jiwan Koo ,  Maksim ANDREEV ,  Sahwan HONG ,  Seunghwan SEO ,  Juhee LEE ,  Bongjin KUH

IPC分类号： H01L29/76 ,  H01L29/24 ,  H01L29/417 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/7606 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/78618 ,  H01L29/78696 ,  H01L21/02568 ,  H01L29/66969

摘要： A semiconductor device includes a channel on a substrate. The channel includes a 2-dimensional material. A gate insulating layer is on a first portion of the channel. A gate electrode is on a portion of the gate insulating layer. First and second contact patterns are on second portions of the channel, respectively. Each of the first and second contact patterns includes a 2-dimensional material having an intercalation material disposed therein. First and second source/drain electrodes are on the first and second contact patterns, respectively. Each of the first and second source/drain electrodes includes a metal.

公开(公告)号：US20230282651A1

公开(公告)日：2023-09-07

申请号：US18197805

申请日：2023-05-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Kaoru HATANO

IPC分类号： H01L27/12 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  H01L29/24 ,  H01L29/786

CPC分类号： H01L27/124 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/136213 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696 ,  G02F1/136227 ,  G02F1/136231 ,  G02F2201/50

摘要： Provided is a method to manufacture a liquid crystal display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.

公开(公告)号：US11729960B2

公开(公告)日：2023-08-15

申请号：US17503651

申请日：2021-10-18

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Hajime Kimura ,  Takayuki Ikeda ,  Kiyoshi Kato ,  Yuta Endo ,  Junpei Sugao

IPC分类号： H10B12/00 ,  G11C5/02 ,  G11C11/403 ,  G11C11/409 ,  H01L29/24

CPC分类号： H10B12/00 ,  G11C5/02 ,  G11C11/403 ,  G11C11/409 ,  H01L29/24

摘要： A semiconductor device with a large storage capacity per unit area is provided. A semiconductor device includes a memory cell. The memory cell includes a first conductor; a first insulator over the first conductor; a first oxide over the first insulator and including a first region, a second region, and a third region positioned between the first region and the second region; a second insulator over the first oxide; a second conductor over the second insulator; a third insulator positioned in contact with a side surface of the first region; and a second oxide positioned on the side surface of the first region, with the third insulator therebetween. The first region includes a region overlapping the first conductor. The third region includes a region overlapped by the second conductor. The first region and the second region have a lower resistance than the third region.

公开(公告)号：US11728437B2

公开(公告)日：2023-08-15

申请号：US17741698

申请日：2022-05-11

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/66 ,  H01L29/24

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

摘要： A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer over the gate insulating layer in a region overlapping with the crystalline region. The crystalline region includes a crystal whose c-axis is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer.

公开(公告)号：US11728391B2

公开(公告)日：2023-08-15

申请号：US17218212

申请日：2021-03-31

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Dhanyakumar Mahaveer Sathaiya ,  Khaderbad Mrunal Abhijith ,  Tzer-Min Shen

IPC分类号： H01L29/24 ,  H01L29/16 ,  H01L29/267 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/24 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851

摘要： Semiconductor devices and methods of forming the same are provided. A method includes providing a workpiece having a semiconductor structure; depositing a two-dimensional (2D) material layer over the semiconductor structure; forming a source feature and a drain feature electrically connected to the semiconductor structure and the 2D material layer, wherein the source feature and drain feature include a semiconductor material; and forming a gate structure over the two-dimensional material layer and interposed between the source feature and the drain feature. The gate structure, the source feature, the drain feature, the semiconductor structure and the 2D material layer are configured to form a field-effect transistor. The semiconductor structure and the 2D material layer function, respectively, as a first channel and a second channel between the source feature and the drain feature.

公开(公告)号：US11728390B2

公开(公告)日：2023-08-15

申请号：US16482203

申请日：2018-01-23

申请人： IDEMITSU KOSAN CO., LTD.

发明人： Kazuyoshi Inoue ,  Masatoshi Shibata

IPC分类号： H01L29/24 ,  C04B35/01 ,  C04B35/64 ,  C23C14/08 ,  C23C14/34 ,  H01L29/66 ,  H01L29/786 ,  H01L29/26

CPC分类号： H01L29/24 ,  C04B35/01 ,  C04B35/64 ,  C23C14/086 ,  C23C14/3414 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/66977 ,  H01L29/78693 ,  C04B2235/3217 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/602 ,  H01L29/263

摘要： An oxide semiconductor film contains In, Ga, and Sn at respective atomic ratios satisfying formulae (1) to (3): 0.01≤Ga/(In+Ga+Sn)≤0.30 . . . (1); 0.01≤Sn/(In+Ga+Sn)≤0.40 . . . (2); and 0.55≤In/(In+Ga+Sn)≤0.98 . . . (3), and Al at an atomic ratio satisfying a formula (4): 0.05≤Al/(In+Ga+Sn+Al)≤0.30 . . . (4).

公开(公告)号：US11715770B2

公开(公告)日：2023-08-01

申请号：US16682897

申请日：2019-11-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd. ,  National Taiwan University

发明人： Che-Wei Yang ,  Hao-Hsiung Lin

IPC分类号： H01L29/24 ,  H01L21/8238 ,  H01L29/10 ,  H01L27/092

CPC分类号： H01L29/24 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823871 ,  H01L27/092 ,  H01L29/1033

摘要： The current disclosure describes semiconductor devices, e.g., transistors including a thin semimetal layer as a channel region over a substrate, which includes bandgap opening and exhibits semiconductor properties. Described semiconductor devices include source/drain regions that include a thicker semimetal layer over the thin semimetal layer serving as the channel region, this thicker semimetal layer exhibiting metal properties. The semimetal used for the source/drain regions include a same or similar semimetal material as the semimetal of the channel region.

公开(公告)号：US20230238387A1

公开(公告)日：2023-07-27

申请号：US18129975

申请日：2023-04-03

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Junichiro SAKATA ,  Toshinari SASAKI ,  Miyuki HOSOBA

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

CPC分类号： H01L27/1225 ,  H01L27/1218 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78696 ,  H01L29/66969 ,  H01L29/7869 ,  H01L27/124 ,  H01L27/127 ,  H01L29/24 ,  H01L29/78633 ,  H01L29/78654

摘要： An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.