公开(公告)号：US20180358776A1

公开(公告)日：2018-12-13

申请号：US16103879

申请日：2018-08-14

Applicant: NICHIA CORPORATION

Inventor： Kazuma Kozuru ,  Shinichi Nagahama

IPC: H01S5/00 ,  F21V29/74 ,  F21K9/64 ,  F21V13/08 ,  H01S5/022 ,  F21Y101/00 ,  F21Y115/30 ,  H01S5/024 ,  H01S5/40

CPC classification number: H01S5/005 ,  F21K9/64 ,  F21V13/08 ,  F21V29/74 ,  F21Y2101/00 ,  F21Y2115/30 ,  H01L2224/48091 ,  H01S5/0071 ,  H01S5/02208 ,  H01S5/02248 ,  H01S5/02469 ,  H01S5/4056 ,  H01L2924/00014

Abstract: A light emitting device includes a base; a plurality of semiconductor laser elements that are disposed on the base and that are configured to emit light laterally from the plurality of semiconductor laser elements; a reflecting member that is disposed on the base and configured to reflect light from the plurality of semiconductor laser elements; a surrounding part that is disposed on the base and that surrounds the plurality of semiconductor laser elements and the reflecting member; a wiring part that is disposed on the base so as to extend to a location outside of the surrounding part, the wiring part being electrically connected to the plurality of semiconductor laser elements; a radiating body disposed on the surrounding part, the radiating body comprising at least one of a metal and a ceramic, and the radiating body having an opening; and a wavelength converting member that is located in the opening of the radiating body, the wavelength converting member being configured to convert a wavelength of light that is emitted from the plurality of semiconductor laser elements and reflected upward by the reflecting member.

公开(公告)号：US20180356500A1

公开(公告)日：2018-12-13

申请号：US16030514

申请日：2018-07-09

Applicant: Waymo LLC

Inventor： Benjamin INGRAM ,  Pierre-Yves DROZ ,  Luke WACHTER ,  Scott MCCLOSKEY ,  Blaise GASSEND ,  Gaetan PENNECOT

IPC: G01S7/481 ,  G01S17/10 ,  H01S3/11

CPC classification number: G01S7/4815 ,  G01S7/484 ,  G01S17/10 ,  G01S17/936 ,  H01S3/11 ,  H01S3/2308 ,  H01S5/4025 ,  H01S5/4056

Abstract: The present disclosure relates to systems and methods that facilitate light detection and ranging operations. An example transmit block includes at least one substrate with a plurality of angled facets. The plurality of angled facets provides a corresponding plurality of elevation angles. A set of angle differences between adjacent elevation angles includes at least two different angle difference values. A plurality of light-emitter devices is configured to emit light into an environment along the plurality of elevation angles toward respective target locations so as to provide a desired resolution and/or a respective elevation angle. The present disclosure also relates to adjusting shot power and a shot schedule based on the desired resolution and/or a respective elevation angle.

公开(公告)号：US20180335582A1

公开(公告)日：2018-11-22

申请号：US16034762

申请日：2018-07-13

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Yuta Ishige ,  Etsuji Katayama ,  Toshio Kimura

IPC: G02B6/42 ,  H01S5/022 ,  H01S5/40 ,  G03B21/20 ,  G02B27/09 ,  G02B19/00

CPC classification number: H01S5/02252 ,  G02B6/42 ,  G02B27/0922 ,  G02B27/0961 ,  G02B27/0966 ,  G02B27/106 ,  G02B27/123 ,  H01S5/022 ,  H01S5/02216 ,  H01S5/0228 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/02292 ,  H01S5/40 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/405 ,  H01S5/4056 ,  H01S5/4081

Abstract: Semiconductor lasers are arranged in a plurality of columns. The columns of the respective semiconductor lasers include semiconductor laser installed columns. Reflecting mirrors in the respective semiconductor laser installed columns reflect light in substantially the same axial direction as viewed from above, and constitute beam groups. The beam groups of the respective semiconductor laser installed columns are formed on both sides in a width direction of a housing. That is, the beam groups are configured for each of the semiconductor laser installed columns, and the respective beam groups are formed on mutually different axes as viewed from above.

公开(公告)号：US20180309264A1

公开(公告)日：2018-10-25

申请号：US15961750

申请日：2018-04-24

Applicant: Manoj Kanskar ,  Mark DeFranza

Inventor： Manoj Kanskar ,  Mark DeFranza

IPC: H01S5/024 ,  H01S5/00

CPC classification number: H01S5/02423 ,  H01S5/005 ,  H01S5/0071 ,  H01S5/02216 ,  H01S5/02252 ,  H01S5/02284 ,  H01S5/02469 ,  H01S5/02492 ,  H01S5/4012 ,  H01S5/4056

Abstract: Apparatus include a conductive block including a base surface and a plurality of parallel stepped surfaces opposite the base surface and defining respective mounting surfaces situated to receive respective laser diodes having respective thermal paths defining a common thermal path distance from the mounting surfaces to the base surface, and a two-phase cooling unit including a coupling surface attached to the base surface of the conductive block and wherein the two-phase cooling unit is situated to conduct heat generated through the emission of laser beams from the laser diodes along the thermal paths.

公开(公告)号：US09835296B2

公开(公告)日：2017-12-05

申请号：US15159595

申请日：2016-05-19

Applicant: Soraa Laser Diode, Inc.

Inventor： Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Hua Huang

IPC: H01S5/00 ,  F21K99/00 ,  G02B6/27 ,  F21K9/60 ,  H01S5/022 ,  H01S5/024 ,  H01S5/22 ,  H01S5/343 ,  H01S5/40 ,  B82Y20/00 ,  G02B6/42 ,  F21V29/71 ,  F21V29/83 ,  F21V9/16 ,  F21V23/06 ,  F21V8/00 ,  H01S5/323 ,  F21K9/62 ,  F21K9/64 ,  G02B6/26 ,  H01S5/028 ,  H01S5/042 ,  F21Y115/30 ,  F21Y115/10 ,  F21Y101/00

CPC classification number: F21K9/60 ,  B82Y20/00 ,  F21K9/62 ,  F21K9/64 ,  F21V9/30 ,  F21V23/06 ,  F21V29/713 ,  F21V29/83 ,  F21Y2101/00 ,  F21Y2115/10 ,  F21Y2115/30 ,  G02B6/0005 ,  G02B6/26 ,  G02B6/27 ,  G02B6/4214 ,  G02B6/4249 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01S5/0021 ,  H01S5/005 ,  H01S5/0085 ,  H01S5/0092 ,  H01S5/02208 ,  H01S5/02224 ,  H01S5/02236 ,  H01S5/02252 ,  H01S5/02276 ,  H01S5/02284 ,  H01S5/02292 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/3235 ,  H01S5/34333 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4056 ,  H01S2301/14 ,  H01S2304/04

Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

公开(公告)号：US09804330B1

公开(公告)日：2017-10-31

申请号：US15401311

申请日：2017-01-09

Applicant: Mitsubishi Electric Corporation

Inventor： Ryosuke Nagao ,  Yoshifumi Sasahata ,  Eitaro Ishimura

IPC: H01S5/40 ,  G02B6/125 ,  G02B6/293 ,  G02B6/12 ,  H01S5/0625

CPC classification number: G02B6/125 ,  G02B6/12004 ,  G02B6/29344 ,  G02B6/2938 ,  G02B2006/12035 ,  G02B2006/12121 ,  H01S5/026 ,  H01S5/06256 ,  H01S5/0687 ,  H01S5/12 ,  H01S5/2022 ,  H01S5/4012 ,  H01S5/4031 ,  H01S5/4056 ,  H01S5/4087 ,  H01S2301/02

Abstract: According to the present invention, a semiconductor device includes a substrate comprising a front end face, a rear end face and side faces, a plurality of semiconductor lasers provided on the substrate, a forward optical multiplexer to multiplex forward output light of the plurality of semiconductor lasers and output the multiplexed light to the front end face, a backward optical multiplexer to multiplex backward output light of the plurality of semiconductor lasers and output the multiplexed light to the rear end face and a plurality of backward waveguides connected to an output section of the backward optical multiplexer, wherein the plurality of backward waveguides includes a main waveguide disposed at a center of the output section and a plurality of lateral waveguides disposed on both sides of the main waveguide to bend toward the side faces and output light from the side faces diagonally to the side faces.

公开(公告)号：US09774172B1

公开(公告)日：2017-09-26

申请号：US15337916

申请日：2016-10-28

Applicant: Lumentum Operations LLC

Inventor： Michael Ayliffe ,  Yuliya Akulova ,  Claude Gamache

IPC: H01S5/00 ,  H01S5/40 ,  H01S5/022 ,  H01S5/183 ,  H01S5/026

CPC classification number: H01S5/4075 ,  H01S5/005 ,  H01S5/0064 ,  H01S5/0071 ,  H01S5/0224 ,  H01S5/02248 ,  H01S5/02252 ,  H01S5/02288 ,  H01S5/02292 ,  H01S5/0267 ,  H01S5/18388 ,  H01S5/4025 ,  H01S5/4056 ,  H01S5/4087

Abstract: An optical device may include a semiconductor laser chip to independently generate four laser beams at different wavelengths. Each laser beam, of the four laser beams, may be directed to a respective optical output of the optical device with a sub-micron level of tolerance of each laser beam relative to the respective optical outputs of the optical device, and each laser beam, of the four laser beams, may be associated with a different optical path from the semiconductor laser chip to the respective optical output of the optical device. The optical device may include a lens to receive each of the four laser beams. The lens may be positioned to direct each laser beam, of the four laser beams, toward the respective optical output of the optical device. The optical device may include an optical isolator to receive each of the four laser beams.

公开(公告)号：US09647416B2

公开(公告)日：2017-05-09

申请号：US14139290

申请日：2013-12-23

Applicant: Lumentum Operations LLC

Inventor： Abdullah Demir ,  Matthew Glenn Peters

IPC: H01S3/10 ,  H01S5/022 ,  H01S5/028 ,  H01S5/223 ,  H01S5/00 ,  H01S5/40 ,  H01S5/10 ,  H01S5/22

CPC classification number: H01S3/10061 ,  H01S5/0071 ,  H01S5/02236 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/22 ,  H01S5/223 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/4043 ,  H01S5/4056 ,  H01S5/4075

Abstract: The invention relates to bi-directional long-cavity semiconductor lasers for high power applications having two AR coated facets (2AR) to provide an un-folded cavity with enhanced output power. The lasers exhibit more uniform photon and carrier density distributions along the cavity than conventional uni-directional high-power lasers, enabling longer lasers with greater output power and lasing efficiency due to reduced longitudinal hole burning. Optical sources are further provided wherein radiation from both facets of several 2AR lasers that are disposed at vertically offset levels is combined into a single composite beam.

公开(公告)号：US20170110853A1

公开(公告)日：2017-04-20

申请号：US15123381

申请日：2015-03-05

Applicant: Yury Georgievich Shreter ,  Yury Toomasovich Rebane ,  Aleksey Vladimirovich Mironov

Inventor： Yury Georgievich Shreter ,  Yury Toomasovich Rebane ,  Aleksey Vladimirovich Mironov

IPC: H01S5/40 ,  H01S5/343 ,  F21V9/16 ,  H01S5/20

CPC classification number: H01S5/4043 ,  F21V9/30 ,  F21Y2115/30 ,  H01S5/005 ,  H01S5/1071 ,  H01S5/1075 ,  H01S5/2031 ,  H01S5/34333 ,  H01S5/4018 ,  H01S5/4056

Abstract: The present invention proposes a semiconductor light-emitting device having an axis of symmetry, the device including two or more laser diodes, each of the laser diodes has an axis of symmetry, wherein the laser diodes are arranged in series on the axis of symmetry of the light-emitting device in such a way that their axes of symmetry coincide, wherein faces of the laser diodes are connected so that they are in electric and mechanic contact and form a bar of the laser diodes, a directional pattern of radiation thereof has an axis of symmetry coinciding with the axis of symmetry of the light-emitting device. The proposed light-emitting device can be used in laser lamps of white light for exciting phosphors since it provides a high degree of flare of cylindrical surfaces.

公开(公告)号：US09595813B2

公开(公告)日：2017-03-14

申请号：US13356355

申请日：2012-01-23

Applicant: James W. Raring ,  Paul Rudy ,  Chendong Bai

Inventor： James W. Raring ,  Paul Rudy ,  Chendong Bai

IPC: H01S5/343 ,  B82Y20/00 ,  H01S5/00 ,  H01S5/022 ,  H01S5/024 ,  H01S5/028 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/40 ,  H01L23/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01L24/45 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01S5/005 ,  H01S5/02252 ,  H01S5/02284 ,  H01S5/02292 ,  H01S5/02476 ,  H01S5/0287 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/4012 ,  H01S5/4031 ,  H01S5/4056 ,  H01S2301/14 ,  H01S2304/04 ,  H01L2924/00014

Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

Abstract translation: 提供了一种使用非极性或半极性含镓衬底如GaN，AlN，InN，InGaN，AlGaN和AlInGaN发射高功率电磁辐射的方法和装置。 在各种实施例中，激光装置包括发射绿色或蓝色激光的多个激光发射器，集成了一个衬底。