公开(公告)号：US11942564B2

公开(公告)日：2024-03-26

申请号：US17915108

申请日：2020-11-03

申请人： LONGI GREEN ENERGY TECHNOLOGY CO., LTD.

发明人： Zhao Wu ,  Chen Xu ,  Zifeng Li

IPC分类号： H01L31/044 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/076 ,  H01L31/077 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/186

摘要： A tandem photovoltaic device includes: a tunnel junction between an upper cell unit and a lower cell unit. The lower cell unit is a crystalline silicon cell. The tunnel junction includes: a carrier transport layer, a crystalline silicon layer, and an intermediate layer located between the carrier transport layer and the crystalline silicon layer. The carrier transport layer is a metal oxide layer. The intermediate layer includes a tunneling layer. The crystalline silicon layer has a doping concentration greater than or equal to 1017 cm−3. The carrier transport layer is in direct contact with a shadow surface of the upper cell unit. If the crystalline silicon layer is a p-type crystalline silicon layer, a first energy level is close to a second energy level. If the crystalline silicon layer is an n-type crystalline silicon layer, a third energy level is close to a fourth energy level.

公开(公告)号：US11935977B2

公开(公告)日：2024-03-19

申请号：US17938180

申请日：2022-10-05

申请人： Massachusetts Institute of Technology

发明人： Vladimir Bulovic ,  Mayuran Saravanapavanantham ,  Jeremiah Mwaura

IPC分类号： H01L31/18 ,  H01L31/0224 ,  H01L31/0468

CPC分类号： H01L31/0468 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/1896

摘要： A device, comprising: a flexible carrier; a release layer that is formed on the flexible carrier; a releasable substrate formed over the release layer; and a semiconductor structure that is formed over the releasable substrate.

公开(公告)号：US11935974B2

公开(公告)日：2024-03-19

申请号：US17293403

申请日：2019-05-23

申请人： Ibaraki University ,  JX METALS CORPORATION

发明人： Haruhiko Udono ,  Toshiaki Asahi

IPC分类号： H01L31/032 ,  C30B29/52 ,  H01L31/18

CPC分类号： H01L31/032 ,  C30B29/52 ,  H01L31/18

摘要： Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula:

Mg2Sn·Zna  Composition formula:

in which, a is a Zn content of from 0.05 to 1 at % relative to Mg2Sn.

公开(公告)号：US11932960B2

公开(公告)日：2024-03-19

申请号：US17725855

申请日：2022-04-21

申请人： Meng Tao ,  Laidong Wang

发明人： Meng Tao ,  Laidong Wang

IPC分类号： C25D3/66 ,  C25D3/54 ,  C25D5/00 ,  C25D5/10 ,  C25D5/50 ,  C25D7/12 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/068 ,  H01L31/18

CPC分类号： C25D3/665 ,  C25D3/54 ,  C25D5/011 ,  C25D5/10 ,  C25D5/50 ,  C25D7/12 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/028 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804

摘要： Methods for light-induced electroplating of aluminum are disclosed herein. Exemplary methods may comprise preparing an ionic liquid comprising aluminum chloride (AlCl3) and an organic halide, placing the silicon substrate into the ionic liquid, illuminating the silicon substrate, the illumination passing through the ionic liquid, and depositing aluminum onto the silicon substrate via a light-induced electroplating process, wherein the light-induced electroplating process utilizes an applied current that does not exceed a photo-generated current generated by the illumination.

公开(公告)号：US20240079507A1

公开(公告)日：2024-03-07

申请号：US18455220

申请日：2023-08-24

申请人： GAF Energy LLC

发明人： Gabriela Bunea

IPC分类号： H01L31/0216 ,  E04D1/30 ,  H01L31/048 ,  H01L31/18 ,  H02S20/25

CPC分类号： H01L31/02168 ,  E04D1/30 ,  H01L31/0488 ,  H01L31/18 ,  H02S20/25 ,  E04D2001/308

摘要： Some embodiments relate to photovoltaic shingle. A photovoltaic shingle comprises an encapsulated solar cell, a glass layer above the encapsulated solar cell, an anti-reflective layer above the glass layer, and a plurality of protrusions above the glass layer. The plurality of protrusions covers at least a portion of at least one of the glass layer, the anti-reflective layer, or any combination thereof, such that the anti-reflective coating is exposed between at least a portion of the plurality of protrusions.

公开(公告)号：US11923470B2

公开(公告)日：2024-03-05

申请号：US17972047

申请日：2022-10-24

申请人： Sensors Unlimited, Inc.

发明人： Wei Zhang ,  Douglas Stewart Malchow ,  Michael J. Evans ,  Paul L. Bereznycky ,  Sean T. Houlihan

IPC分类号： H01L31/0304 ,  H01L21/304 ,  H01L21/3065 ,  H01L31/0232 ,  H01L31/101 ,  H01L31/08 ,  H01L31/18

CPC分类号： H01L31/03046 ,  H01L21/304 ,  H01L21/3065 ,  H01L31/02327 ,  H01L31/101 ,  H01L31/1844

摘要： A method includes forming an assembly of layers including an InP cap layer on an InGaAs absorption region layer, wherein the InGaAs layer is on an n-InP layer, and wherein an underlying substrate layer underlies the n-InP layer. The method includes removing a portion of the InP cap and n-InP layer by dry etching.

公开(公告)号：US20240072195A1

公开(公告)日：2024-02-29

申请号：US18386535

申请日：2023-11-02

申请人： TRINA SOLAR CO., LTD

发明人： Chengfa LIU ,  Hong CHEN ,  Daming CHEN ,  Yifeng CHEN

IPC分类号： H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236

CPC分类号： H01L31/1868 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/186

摘要： The present application relates to a method for manufacturing a solar cell. In the method, a wafer including a substrate and a doped conducting layer is provided. A doped conducting layer is disposed at least on the first surface and the portion of the first side surface, thereby covering the textured structure. A passivating contact layer is formed on the second surface of the substrate. A first passivation layer is formed on the doped conducting layer. The first passivation layer covers the first surface and at least the portion of the first side surface, thereby covering at least the doped conducting layer. A second passivation layer is formed on the passivating contact layer. The second passivation layer covers the second surface, thereby covering the passivating contact layer.

公开(公告)号：US20240072190A1

公开(公告)日：2024-02-29

申请号：US18259818

申请日：2021-12-20

申请人： REC SOLAR PTE. LTD.

发明人： Muzhi TANG ,  Priyadharsini KARUPPUSWAMY ,  Shu Yunn CHONG ,  Kenta NAKAYASHIKI

IPC分类号： H01L31/077 ,  H01L31/0475 ,  H01L31/076 ,  H01L31/18

CPC分类号： H01L31/077 ,  H01L31/0475 ,  H01L31/076 ,  H01L31/1816

摘要： A solar cell comprising a silicon substrate and a layered structure arranged on a surface of the silicon substrate, the layered structure comprising; a first layer comprising a percentage of crystalline material arranged within an amorphous matrix, the first layer being arranged on the surface of the silicon substrate; a second layer comprising a percentage of crystalline material arranged within an amorphous matrix, the second layer being interposed between the first layer and the surface of the silicon substrate; wherein the percentage of crystalline material in the first layer is greater than the percentage of crystalline material in the second layer.

公开(公告)号：US20240072183A1

公开(公告)日：2024-02-29

申请号：US18270126

申请日：2021-12-30

申请人： LYNRED

发明人： Nicolas PERE-LAPERNE ,  Alexandre KERLAIN ,  Vincent DESTEFANIS ,  Paul FOUGERES

IPC分类号： H01L31/0296 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/02966 ,  H01L31/03529 ,  H01L31/1832

摘要： A substrate to fabricate a photodiode structure has a top layer made from cadmium-doped semiconductor material. A first HgCdTe-base layer is formed by liquid phase epitaxy from the top layer with a bath containing an n-type electrically active dopant to electrically dope the first layer. The cadmium diffuses from the top layer to the first layer to form a decreasing cadmium concentration gradient from the interface with the top layer in a direction away from the interface. The cadmium concentration gradient causes a decreasing band gap width gradient in the first layer from the interface and causes an n-type dopant concentration gradient in the first layer from the interface.

公开(公告)号：US20240063323A1

公开(公告)日：2024-02-22

申请号：US18257078

申请日：2021-12-14

申请人： HANWHA Q CELLS GMBH

发明人： Enrico JARZEMBOWSKI ,  Maximilian KAUERT ,  Stefan PETERS

IPC分类号： H01L31/18

CPC分类号： H01L31/1864 ,  H01L31/1876 ,  H01L31/1804 ,  H01L31/184 ,  H01L31/0336

摘要： A method for producing a boron emitter on at least one silicon wafer, arranged in a tube furnace, including: a step for forming borosilicate glass on the silicon wafer, including in the sequence given: a) evacuating the tube furnace to a specified pressure, b) feeding reagents, having BCU and O2, into the tube furnace and adjusting to a further specified pressure, c) stopping the supply after expiry of a specified period and allowing the reagents supplied to react with each other and a surface of the silicon wafer for a specified period to form a layer of borosilicate glass on the surface of the silicon wafer, and d) evacuating the tube furnace on expiry of the specified period.