公开(公告)号：US20060186497A1

公开(公告)日：2006-08-24

申请号：US11276036

申请日：2006-02-10

申请人： Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi ,  Tatsuya Arao

发明人： Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi ,  Tatsuya Arao

IPC分类号： H01L27/14

CPC分类号： H01L31/1133 ,  H01L27/14603 ,  H01L27/14643 ,  H01L27/14687

摘要： It is an object of the present invention to provide a photo-sensor having a structure which can suppress electrostatic discharge damage. Conventionally, a transparent electrode has been formed over the entire surface of a light receiving region; however, in the present invention, the transparent electrode is not formed, and a p-type semiconductor layer and an n-type semiconductor layer of a photoelectric conversion layer are used as an electrode. Therefore, in the photo-sensor according to the present invention, resistance is increased and electrostatic discharge damage can be suppressed. In addition, positions of the p-type semiconductor layer and the n-type semiconductor layer, which serve as an electrode, are kept away; and thus, resistance is increased and withstand voltage can be improved.

摘要翻译： 本发明的目的是提供一种能够抑制静电放电损坏的结构的光电传感器。 通常，在光接收区域的整个表面上形成透明电极; 然而，在本发明中，不形成透明电极，并且使用光电转换层的p型半导体层和n型半导体层作为电极。 因此，在根据本发明的光电传感器中，电阻增加并且可以抑制静电放电损坏。 此外，用作电极的p型半导体层和n型半导体层的位置被保留; 因此，电阻增加，并且可以提高耐受电压。

公开(公告)号：US06933184B2

公开(公告)日：2005-08-23

申请号：US10622584

申请日：2003-07-21

申请人： Tatsuya Arao ,  Hideomi Suzawa ,  Koji Ono ,  Toru Takayama

发明人： Tatsuya Arao ,  Hideomi Suzawa ,  Koji Ono ,  Toru Takayama

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L27/1259 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863

摘要： Conventionally, when a TFT provided with an LDD structure or a TFT provided with a GOLD structure is to be formed, there is a problem in that the manufacturing process becomes complicated, which leads to the increase in the number of steps. An electrode formed of a lamination of a first conductive layer (18b) and a second conductive layer (17c), which have different widths from each other, is formed. After the first conductive layer (18b) is selectively etched to form a first conductive layer (18c), a low concentration impurity region (25a) overlapping the first conductive layer (18c) and a low concentration impurity region (25b) not overlapping the first conductive layer 18c are formed by doping an impurity element at a low concentration.

摘要翻译： 通常，当形成设置有LDD结构的TFT或具有GOLD结构的TFT时，存在制造过程变得复杂的问题，导致步骤数增加。 形成由彼此具有不同宽度的第一导电层（18b）和第二导电层（17c）的叠层形成的电极。 在选择性蚀刻第一导电层（18b）以形成第一导电层（18c）之后，与第一导电层（18c）和低浓度杂质区域（25b）重叠的低浓度杂质区域（25a） ）不是通过以低浓度掺杂杂质元素形成第一导电层18c。

公开(公告)号：US20050164520A1

公开(公告)日：2005-07-28

申请号：US10863170

申请日：2004-06-08

申请人： Koji Muranaka ,  Ryoji Nomura ,  Takeshi Shichi ,  Tatsuya Arao ,  Masahiro Katayama

发明人： Koji Muranaka ,  Ryoji Nomura ,  Takeshi Shichi ,  Tatsuya Arao ,  Masahiro Katayama

IPC分类号： G03F7/11 ,  G03C1/52 ,  H01L21/027 ,  H01L21/312 ,  H01L21/336 ,  H01L21/768 ,  H01L23/522 ,  H01L27/32 ,  H01L29/786 ,  H01L51/00 ,  H01L51/52 ,  H01L51/56

CPC分类号： H01L21/022 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/02343 ,  H01L21/02345 ,  H01L21/02351 ,  H01L21/312 ,  H01L27/3246 ,  H01L51/0037 ,  H01L51/0059 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/56

摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device in which a desired region can be etched by evenly applying a solution including a resist and a method for manufacturing a semiconductor device having a laminated structure by forming an interlayer insulating layer with an organic resin.

摘要翻译： 本发明的一个目的是提供一种半导体器件的制造方法，其中通过均匀地涂覆包括抗蚀剂的溶液来蚀刻所需区域，以及通过形成层间绝缘材料制造具有层压结构的半导体器件的方法 层与有机树脂。

公开(公告)号：US06893887B2

公开(公告)日：2005-05-17

申请号：US10051895

申请日：2002-01-17

申请人： Hirokazu Yamagata ,  Hisao Ikeda ,  Yoshimi Adachi ,  Noriko Miyagi ,  Tatsuya Arao ,  Koji Ono

发明人： Hirokazu Yamagata ,  Hisao Ikeda ,  Yoshimi Adachi ,  Noriko Miyagi ,  Tatsuya Arao ,  Koji Ono

IPC分类号： H01L27/32 ,  H01L51/52 ,  H01L21/00

CPC分类号： H01L27/3246 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/5206 ,  H01L51/5253

摘要： The surface of an anode is made flat by wiping/cleaning of the present invention. Thereafter, an organic compound layer and a cathode are formed to produce a light emitting element. In this way, the distance between the anode and the cathode becomes constant. Therefore, when an electric field is applied to the light emitting element, the current density in the organic compound layer becomes uniform. Thus, it is possible to prevent the deterioration of the organic compound layer and improve the element characteristic thereof.

摘要翻译： 通过擦拭/清洁本发明使阳极的表面平坦。 此后，形成有机化合物层和阴极以产生发光元件。 以这种方式，阳极和阴极之间的距离变得恒定。 因此，当向发光元件施加电场时，有机化合物层中的电流密度变得均匀。 因此，可以防止有机化合物层的劣化并提高其元件特性。

公开(公告)号：US06774397B2

公开(公告)日：2004-08-10

申请号：US09826416

申请日：2001-04-05

申请人： Tatsuya Arao ,  Hideomi Suzawa

发明人： Tatsuya Arao ,  Hideomi Suzawa

IPC分类号： H01L2904

CPC分类号： H01L29/4908 ,  G02F1/13458 ,  G02F1/136213 ,  G02F1/136286 ,  G02F2001/136231 ,  H01L27/124 ,  H01L27/1288

摘要： To realize the reduction of a manufacturing cost and the enhancement of yield by reducing the number of steps of a TFT in an electro-optical device typified by an active matrix liquid crystal display device. A semiconductor device of the present invention is characterized by including a first wiring and a second wiring formed of a first conductive film on the same insulating surface, a first semiconductor film of one conductivity type formed on the first and second wirings so as to correspond thereto, a second semiconductor film formed on an upper layer of the first semiconductor film of one conductivity type across the first wiring and the second wiring, an insulating film formed on the second semiconductor film, and a third conductive film formed on the insulating film.

摘要翻译： 通过减少以有源矩阵液晶显示装置为代表的电光装置中的TFT的台阶数来实现制造成本的降低和产量的提高。 本发明的半导体器件的特征在于，在同一绝缘表面上包括由第一导电膜形成的第一布线和第二布线，形成在第一布线和第二布线上的一种导电类型的第一半导体膜，以便与其对应 形成在第一布线和第二布线上的一种导电类型的第一半导体膜的上层上的第二半导体膜，形成在第二半导体膜上的绝缘膜和形成在绝缘膜上的第三导电膜。

公开(公告)号：US06737302B2

公开(公告)日：2004-05-18

申请号：US10284275

申请日：2002-10-30

申请人： Tatsuya Arao

发明人： Tatsuya Arao

IPC分类号： H01L2100

CPC分类号： H01L29/66757 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78648

摘要： To provide a manufacturing method for a field-effect transistor, such as a thin-film transistor, enabling reductions in the number patterning steps and the number of photomasks and improvements in the throughput and the yield. In the method, an oxide film is formed by processing the surface of a crystalline semiconductor with ozone water or hydrogen peroxide water. Using the oxide film thus formed as an etch stop, a gate electrode, a source electrode, and a drain electrode of the field-effect transistor are simultaneously formed from a same starting film in one patterning step by use of one photomask. After forming the gate electrode, the source electrode, and the drain electrode, heating is performed thereon at 800° C. or higher for a predetermined time. Thereby, the contact resistances between the source electrode and the crystalline semiconductor and between the drain electrode and the crystalline semiconductor are reduced, whereby improving the electrical conductivity.

摘要翻译： 为了提供诸如薄膜晶体管的场效应晶体管的制造方法，能够减少数量图案化步骤和光掩模的数量以及产量和产量的提高。 在该方法中，通过用臭氧水或过氧化氢水处理结晶半导体的表面来形成氧化膜。 使用如此形成的氧化膜作为蚀刻停止体，通过使用一个光掩模，在一个图案化步骤中由相同的起始膜同时形成场效应晶体管的栅电极，源电极和漏电极。 在形成栅电极，源电极和漏电极之后，在800℃以上进行规定时间的加热。 由此，源电极和结晶半导体之间以及漏电极和晶体半导体之间的接触电阻降低，从而提高导电性。

公开(公告)号：US08207591B2

公开(公告)日：2012-06-26

申请号：US13206544

申请日：2011-08-10

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L31/102

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： A photoelectric conversion device includes a first electrode; and, over the first electrode, photoelectric conversion layer that includes a first semiconductor layer having one conductivity, a second semiconductor layer over the first semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer. An insulating layer is over the third semiconductor layer, and a second electrode is over the insulating layer and is electrically connected to the third semiconductor layer through the insulating layer. The third semiconductor layer and a part of the second semiconductor layer are removed in a region of the photoelectric conversion layer that does not overlap the insulating layer.

摘要翻译： 光电转换装置包括：第一电极; 并且在第一电极之上，包括具有一个导电性的第一半导体层，第一半导体层上的第二半导体层和具有与第二半导体层的一个导电性相反的导电性的第三半导体层的光电转换层。 绝缘层在第三半导体层之上，第二电极在绝缘层的上方，并通过绝缘层与第三半导体层电连接。 在不与绝缘层重叠的光电转换层的区域中去除第三半导体层和第二半导体层的一部分。

公开(公告)号：US20110291090A1

公开(公告)日：2011-12-01

申请号：US13206544

申请日：2011-08-10

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L31/0376

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.

摘要翻译： 光电转换装置的制造方法包括以下步骤：在基板上形成第一电极; 并且在所述第一电极上形成光电转换层，所述光电转换层包括具有一个导电性的第一导电层，第二半导体层和具有与所述第一电极上的所述第二半导体层的一个电导率相反的导电性的第三半导体层。 制造方法还包括在光电转换层的区域中去除第二半导体层的一部分和第三半导体层的一部分的步骤，使得第三半导体层不与第一电极重叠。

公开(公告)号：US07939827B2

公开(公告)日：2011-05-10

申请号：US12335058

申请日：2008-12-15

申请人： Tatsuya Arao

发明人： Tatsuya Arao

IPC分类号： H01L29/12

CPC分类号： G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78633

摘要： To realize a semiconductor device including a capacitor element capable of obtaining a sufficient capacitor without reducing an opening ratio, in which a pixel electrode is flattened in order to control a defect in orientation of liquid crystal. A semiconductor device of the present invention includes a light-shielding film formed on the thin film transistor, a capacitor insulating film formed on the light-shielding film, a conductive layer formed on the capacitor insulating film, and a pixel electrode that is formed so as to be electrically connected to the conductive layer, in which a storage capacitor element comprises the light-shielding film, the capacitor insulating film, and the conductive layer, whereby an area of a region serving as the capacitor element can be increased.

摘要翻译： 为了实现包括能够获得足够的电容器而不降低开口率的电容器元件的半导体器件，其中像素电极被平坦化以便控制液晶取向的缺陷。 本发明的半导体器件包括形成在薄膜晶体管上的遮光膜，形成在遮光膜上的电容器绝缘膜，形成在电容器绝缘膜上的导电层，以及形成为这样的像素电极 为了与导电层电连接，其中存储电容器元件包括遮光膜，电容器绝缘膜和导电层，由此可以增加用作电容器元件的区域的面积。

公开(公告)号：US07838812B2

公开(公告)日：2010-11-23

申请号：US12350271

申请日：2009-01-08

申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

IPC分类号： H01J40/14 ,  H03F3/08 ,  H03K17/78 ,  H04N3/14

CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。