Abstract:
A method of connecting a conductive trace and an insulative base to a semiconductor chip includes providing a semiconductor chip, a conductive trace and an insulative base, wherein the chip includes a conductive pad and the insulative base contacts the conductive trace on a side opposite the chip, then forming a through-hole that extends through the insulative base and exposes the conductive trace and the pad, and then forming a connection joint that contacts and electrically connects the conductive trace and the pad.
Abstract:
A method of connecting a conductive trace to a semiconductor chip includes providing a semiconductor chip, a conductive trace and a base, wherein the chip includes a conductive pad, the base includes a recess, the conductive trace includes a bumped terminal in the recess, the bumped terminal includes a cavity that extends into and faces away from the recess, the base contacts and covers the conductive trace on a side opposite the chip, and the conductive trace and the base are different metals, mechanically attaching the chip to the conductive trace using an insulative adhesive that extends into the cavity, etching the base to expose the conductive trace, and forming a connection joint that contacts and electrically connects the conductive trace and the pad. Preferably, the bumped terminal is inside a periphery of the chip, and the adhesive fills the cavity.
Abstract:
A method of manufacturing a multilayer interconnect substrate includes providing a first interconnect layer that includes a first conductive trace, wherein the first conductive trace includes a first pillar and a first routing line, and the first pillar protrudes vertically from and is electrically connected to the first routing line, providing a second interconnect layer that includes a second conductive trace, wherein the second conductive trace includes a second pillar and a second routing line, and the second pillar protrudes vertically from and is electrically connected to the second routing line, forming an opening in a dielectric layer between the first and second interconnect layers that exposes portions of the first pillar and the second routing line that were previously covered by the dielectric layer, and forming a connection joint in the opening that contacts and electrically connects the first pillar and the second routing line.
Abstract:
A method of making a semiconductor chip assembly includes providing a semiconductor chip and a laminated structure, wherein the chip includes a conductive pad, the laminated structure includes a conductive trace, an insulative base and a metal base, the conductive trace includes a routing line and a pillar, the metal base and the routing line are disposed on opposite sides of the insulative base, and the pillar contacts the routing line and extends through the insulative base and into the metal base, removing a portion of the metal base that contacts the pillar, and forming a connection joint that contacts and electrically connects the conductive trace and the pad.
Abstract:
A method of making a semiconductor chip assembly includes providing a semiconductor chip, a metal base, an insulative base and a conductive trace, wherein the chip includes a conductive pad, the metal base is disposed on a side of the insulative base that faces away from the chip, and the conductive trace includes a contact terminal that extends through the insulative base, then forming an opening that extends through the metal base and the insulative base, exposes the pad and is spaced from the contact terminal, then forming a connection joint that contacts and electrically connects the conductive trace and the pad, and then removing a portion of the metal base that contacts the contact terminal. Preferably, the opening extends through an insulative adhesive that attaches the chip to the conductive trace.
Abstract:
A method of connecting a conductive trace to a semiconductor chip includes providing a semiconductor chip, a conductive trace and a base, wherein the chip includes a conductive pad, the base includes a recess, the conductive trace includes a bumped terminal in the recess, the bumped terminal includes a cavity that extends into and faces away from the recess, the base contacts and covers the conductive trace on a side opposite the chip, and the conductive trace and the base are different metals, mechanically attaching the chip to the conductive trace using an insulative adhesive that extends into the cavity, etching the base to expose the conductive trace, and forming a connection joint that contacts and electrically connects the conductive trace and the pad. Preferably, the bumped terminal is inside a periphery of the chip, and the adhesive fills the cavity.
Abstract:
A flip chip assembly, and methods of forming the same, including a single layer or multilayer substrate in which via holes serve as connections between a semiconductor chip and the substrate. The assembling steps comprise attaching an integrated circuit chip to a rigid or flexible dielectric substrate having a plurality of via holes for connecting respective traces on the substrate with respective input/output terminal pads of the integrated circuit chip. The via holes are aligned and placed on top of the pads so that the pads are totally or partially exposed through the opposite side of the substrate. Electrically conductive material is subsequently deposited in the via holes as well as on the surface of the pads to provide electrical connections between the integrated circuit chip and the traces of the dielectric circuitry. After the connections are made, the attachment between the chip and substrate can be removed or left as an integral part of the assembly since the connections also provide mechanical support. The contacting materials include electroless plated metals, electrochemical plated metals, solders, epoxies and conductive polymers.
Abstract:
A method of manufacturing a semiconductor chip assembly includes providing a semiconductor chip and a conductive metal, wherein the chip includes a conductive pad, the conductive metal includes a dimple, and the pad is aligned with the dimple, etching the conductive metal on a side opposite the dimple such that the dimple forms a through-hole in the conductive metal, and forming a connection joint in the through-hole that electrically connects the conductive metal and the pad. The method may include mechanically attaching the chip to the conductive metal using an adhesive before forming the through-hole, and forming an opening in the adhesive directly beneath the through-hole thereby exposing the pad after mechanically attaching the chip to the conductive metal and before forming the connection joint.
Abstract:
A semiconductor chip assembly includes a semiconductor chip attached to a support circuit. The support circuit includes an insulative base, a conductive trace and a through-hole between its top and bottom surfaces. The through-hole includes a top sidewall portion adjacent to the top surface and a bottom sidewall portion adjacent to the bottom surface. The conductive trace includes a pillar at the top surface and a routing line at the bottom sidewall portion. An electroplated contact terminal on the pillar extends above the base, and an electroplated connection joint in the through-hole contacts the routing line and the pad. Preferably, the connection joint is the only metal in the through-hole. A method of manufacturing the assembly includes simultaneously electroplating the contact terminal and the connection joint.
Abstract:
A semiconductor chip assembly includes a semiconductor chip attached to a support circuit. The support circuit includes an insulative base, a conductive trace and a through-hole that extends through the conductive trace. A ball bond connection joint in the through-hole contacts and electrically connects the conductive trace and the pad. A method of manufacturing the assembly includes mechanically attaching the chip to the support circuit such that the through-hole exposes the pad, and then forming the ball bond in the through-hole using thermocompression or thermosonic wire bonding.