公开(公告)号：US06415736B1

公开(公告)日：2002-07-09

申请号：US09343481

申请日：1999-06-30

申请人： Fangli Hao ,  Rajinder Dhindsa

发明人： Fangli Hao ,  Rajinder Dhindsa

IPC分类号： C23C1600

CPC分类号： H01L21/67017

摘要： A gas distribution system for semiconductor processing includes a contoured surface to achieve a desired gas distribution on the backside of a showerhead. The system can include one or more gas supplies opening into a plenum between a baffle plate and a temperature-controlled support member. The baffle plate can have a nonuniform thickness and geometry-controlled openings to achieve a desired gas distribution. In one arrangement the baffle plate is conical in shape with uniform diameter holes extending different distances through the baffle plate to achieve a uniform pressure of gas through outlets in a planar bottom surface of the baffle plate. In another arrangement, the holes have progressively larger diameters in a direction away from the location of the centrally located gas supply outlet. The shape of the baffle plate and/or configuration of the holes can be designed to achieve a desired gas pressure distribution.

摘要翻译： 用于半导体处理的气体分配系统包括在喷头的背面上实现期望的气体分布的轮廓表面。 该系统可以包括一个或多个气体供应器，其通向挡板和受温度控制的支撑构件之间的通风室。 挡板可以具有不均匀的厚度和几何形状控制的开口以实现期望的气体分布。 在一种布置中，挡板是圆锥形的，具有均匀直径的孔，其延伸穿过挡板的不同距离，以在挡板平面底表面中的出口实现均匀的气体压力。 在另一种布置中，孔在远离中心位置的气体供应出口的位置的方向上具有逐渐更大的直径。 挡板的形状和/或孔的构造可以被设计成实现期望的气体压力分布。

公开(公告)号：US10586686B2

公开(公告)日：2020-03-10

申请号：US13403760

申请日：2012-02-23

申请人： Sang Ki Nam ,  Rajinder Dhindsa ,  James Rogers

发明人： Sang Ki Nam ,  Rajinder Dhindsa ,  James Rogers

IPC分类号： H01J37/32 ,  H01L21/683

摘要： Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, and a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface. A hollow RF feed is configured to deliver RF power, the hollow RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly.

公开(公告)号：US09396908B2

公开(公告)日：2016-07-19

申请号：US13310673

申请日：2011-12-02

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa

IPC分类号： H01J37/32 ,  H05B7/18

CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32568 ,  H01J37/32577 ,  H05B7/18

摘要： Systems and methods for controlling a plasma edge region are described. One of the systems includes a top electrode and a bottom electrode. The system also includes an upper electrode extension and a lower electrode extension. At least a portion of the plasma edge region is formed between the upper electrode extension and the lower electrode extension. The system includes a circuit to control a radio frequency signal at the upper electrode extension.

摘要翻译： 描述了用于控制等离子体边缘区域的系统和方法。 系统之一包括顶电极和底电极。 该系统还包括上电极延伸部和下电极延伸部。 等离子体边缘区域的至少一部分形成在上电极延伸部分和下电极延伸部分之间。 该系统包括用于控制上电极延伸部处的射频信号的电路。

公开(公告)号：US09245720B2

公开(公告)日：2016-01-26

申请号：US13494456

申请日：2012-06-12

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa

IPC分类号： H01L21/00 ,  H01J37/32 ,  G01R19/00 ,  G01R29/08

CPC分类号： H01J37/32935 ,  G01R19/0061 ,  G01R29/0878 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/3299

摘要： Apparatus and methods for assessing RF return current azimuthal uniformity are disclosed. A plurality of non-linear substantially-enclosed RF current sensors are disposed azimuthally around a central axis of a plasma processing chamber. When a plasma is ignited in the plasma processing chamber, the RF return currents are sensed in the plurality of non-linear substantially-enclosed RF current sensors and analyzed to ascertain whether RF return current azimuthal uniformity is acceptable.

摘要翻译： 公开了用于评估RF返回电流方位均匀性的装置和方法。 多个非线性的基本上封闭的RF电流传感器围绕等离子体处理室的中心轴方位设置。 当在等离子体处理室中点燃等离子体时，在多个非线性的基本封闭的RF电流传感器中检测RF返回电流，并进行分析，以确定RF返回电流方位均匀性是否可接受。

公开(公告)号：US08911637B2

公开(公告)日：2014-12-16

申请号：US13592262

申请日：2012-08-22

申请人： Rajinder Dhindsa ,  Hudson Eric ,  Alexei Marakhtanov ,  Andreas Fischer

发明人： Rajinder Dhindsa ,  Hudson Eric ,  Alexei Marakhtanov ,  Andreas Fischer

IPC分类号： C23F1/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/306 ,  C23C16/00 ,  H01J37/32

CPC分类号： H01J37/32165 ,  H01J37/32091

摘要： A method for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is disposed on the lower electrode during plasma processing. The method includes providing at least a first RF signal, which has a first RF frequency, to the lower electrode. The first RF signal couples with a plasma in the plasma processing chamber, thereby inducing an induced RF signal on the upper electrode. The method also includes providing a second RF signal to the upper electrode. The second RF signal also has the first RF frequency. A phase of the second RF signal is offset from a phase of the first RF signal by a value that is less than 10%. The method further includes processing the substrate while the second RF signal is provided to the upper electrode.

摘要翻译： 一种用于在具有等离子体处理室和至少上电极和下电极的电容耦合等离子体处理系统中处理衬底的方法。 在等离子体处理期间，衬底设置在下电极上。 该方法包括向下电极提供至少具有第一RF频率的第一RF信号。 第一RF信号与等离子体处理室中的等离子体耦合，从而在上电极上感应感应RF信号。 该方法还包括向上电极提供第二RF信号。 第二RF信号也具有第一RF频率。 第二RF信号的相位偏离第一RF信号的相位小于10％的值。 该方法还包括在将第二RF信号提供给上电极的同时处理衬底。

公开(公告)号：US08911588B2

公开(公告)日：2014-12-16

申请号：US13423281

申请日：2012-03-19

申请人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

发明人： Sang Ki Nam ,  Rajinder Dhindsa ,  Alexei Marakhtanov

IPC分类号： H01J37/04 ,  H01J37/24 ,  H01J37/248 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32 ,  C23C16/458

CPC分类号： H01J37/32935 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/3299 ,  H01J2237/327 ,  H01J2237/3343

摘要： Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.

摘要翻译： 公开了用于修改RF电流路径长度的方法和装置。 装置包括具有RF电源的等离子体处理系统和具有导电部分的下电极。 包括设置在RF电源和导电部分之间的RF电流路径中的绝缘部件。 包括设置在绝缘部件内的多个RF路径修改器，多个RF路径修改器相对于从绝缘部件的中心绘制的参考角度设置在不同的角位置，由此至少第一个 的RF路径修改器电连接到导电部分，并且多个RF路径修改器中的至少第二个RF电路修改器未电连接到导电部分。

公开(公告)号：US08679288B2

公开(公告)日：2014-03-25

申请号：US12155739

申请日：2008-06-09

申请人： Tom Stevenson ,  Rajinder Dhindsa

发明人： Tom Stevenson ,  Rajinder Dhindsa

IPC分类号： C23F1/00 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/3065 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32605 ,  H01L21/67069

摘要： Showerhead electrode assemblies are disclosed, which include a showerhead electrode adapted to be mounted in an interior of a vacuum chamber; an optional backing plate attached to the showerhead electrode; a thermal control plate attached to the backing plate or to the showerhead electrode at multiple contact regions across the backing plate; and at least one interface member separating the backing plate and the thermal control plate, or the thermal control plate and showerhead electrode, at the contact regions, the interface member having a thermally and electrically conductive gasket portion and a particle mitigating seal portion. Methods of processing semiconductor substrates using the showerhead electrode assemblies are also disclosed.

摘要翻译： 公开了一种喷头电极组件，其包括适于安装在真空室内部的喷头电极; 连接到喷头电极的可选背板; 热控制板，其在跨过所述背板的多个接触区域附接到所述背板或所述喷头电极; 以及至少一个界面构件，其在所述接触区域处分离所述背板和所述热控制板或所述热控制板和喷头电极，所述界面构件具有导热和导电的垫圈部分和颗粒减轻密封部分。 还公开了使用喷头电极组件处理半导体衬底的方法。

公开(公告)号：US08591755B2

公开(公告)日：2013-11-26

申请号：US12882560

申请日：2010-09-15

申请人： Rajinder Dhindsa

发明人： Rajinder Dhindsa

IPC分类号： G01L21/30 ,  C23F1/00

CPC分类号： H01L21/67069 ,  C23F1/08 ,  G05B19/418 ,  G05B2219/45031 ,  G05B2219/45212 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67248

摘要： A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time-dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process.

摘要翻译： 确定在等离子体工艺期间施加的时间依赖衬底温度。 基于在给定时间的等离子体成分的粘附系数的控制来确定任何给定时间的时间依赖衬底温度。 还确定了在等离子体处理期间施加的上等离子体边界和衬底之间的时间依赖性温差。 在给定时间内，基于对基板的等离子体成分的通量的控制来确定任何给定时间的时间依赖性温度差。 时间依赖衬底温度和随时间变化的温差存储在数字格式中，适用于被定义并连接到上等离子体边界和衬底的直接温度控制的温度控制装置。 还提供了一种用于在等离子体处理期间实现上等离子体边界和衬底温度控制的系统。

公开(公告)号：US08573152B2

公开(公告)日：2013-11-05

申请号：US12875869

申请日：2010-09-03

申请人： Anthony de la Llera ,  Pratik Mankidy ,  Michael C. Kellogg ,  Rajinder Dhindsa

发明人： Anthony de la Llera ,  Pratik Mankidy ,  Michael C. Kellogg ,  Rajinder Dhindsa

IPC分类号： C23C16/455 ,  C23C16/505 ,  C23C16/509 ,  B23P19/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01R13/20

摘要： A showerhead electrode, a gasket set and an assembly thereof in plasma reaction chamber for etching semiconductor substrates are provided with improved a gas injection hole pattern, positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. A method of assembling the inner electrode and gasket set to a supporting member includes simultaneous engagement of cam locks.

摘要翻译： 在用于蚀刻半导体衬底的等离子体反应室中的喷头电极，垫圈组件及其组件设置有改进的气体注入孔图案，定位精度和减小的翘曲，这导致等离子体处理速率的均匀性提高。 将内部电极和垫圈组装在支撑构件上的方法包括凸轮锁的同时接合。

公开(公告)号：US08563619B2

公开(公告)日：2013-10-22

申请号：US11770664

申请日：2007-06-28

申请人： Rajinder Dhindsa ,  Alexei Marakhtanov

发明人： Rajinder Dhindsa ,  Alexei Marakhtanov

IPC分类号： G01L21/30 ,  B44C1/22

CPC分类号： H01J37/21 ,  H01J37/32091 ,  H01J37/32642 ,  H01J37/32697

摘要： A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by an edge ring. The edge ring is electrically isolated from the chuck. The method includes providing RF power to the chuck. The method also includes providing a tunable capacitance arrangement. The tunable capacitance arrangement is coupled to the edge ring to provide RF coupling to the edge ring, resulting in the edge ring having an edge ring potential. The method further includes generating a plasma within the plasma processing chamber to process the substrate. The substrate is processed while the tunable capacitance arrangement is configured to cause the edge ring potential to be dynamically tunable to a DC potential of the substrate while processing the substrate.

摘要翻译： 提供了一种在等离子体处理室中处理衬底的方法。 基板设置在卡盘上方并被边缘环包围。 边缘环与卡盘电隔离。 该方法包括向卡盘提供RF功率。 该方法还包括提供可调谐电容布置。 可调谐电容布置耦合到边缘环以提供与边缘环的RF耦合，导致边缘环具有边缘环电位。 该方法还包括在等离子体处理室内产生等离子体以处理衬底。 处理衬底，同时可调电容布置被配置为使得边缘环电位在处理衬底的同时能够动态地调谐到衬底的DC电位。