公开(公告)号：US20100207138A1

公开(公告)日：2010-08-19

申请号：US12767783

申请日：2010-04-26

申请人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

发明人： Seiji Nakahata ,  Hideaki Nakahata ,  Koji Uematsu ,  Makoto Kiyama ,  Youichi Nagai ,  Takao Nakamura

IPC分类号： H01L33/30 ,  H01L29/20

CPC分类号： H01L33/007 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L33/0075 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width.

摘要翻译： 尺寸适合于半导体器件的III族氮化物半导体晶体及其制造方法，III族氮化物半导体器件及其制造方法以及发光器具。 制造III族氮化物半导体晶体的方法包括在起始衬底上生长至少一种III族氮化物半导体晶体衬底的工艺，在III族氮化物半导体晶体衬底上生长至少一种III族氮化物半导体晶体层的工艺 以及从起始基板分离由III族氮化物半导体晶体基板和III族氮化物半导体晶体层构成的III族氮化物半导体晶体的工序，其特征在于，所述III族氮化物半导体晶体为10μm 以上且600μm以下，宽度为0.2mm以上且50mm以下。

公开(公告)号：US07723046B2

公开(公告)日：2010-05-25

申请号：US11704546

申请日：2007-02-08

申请人： Takaharu Maruyama ,  Takao Nakamura ,  Haraku Itadani ,  Ken-ichi Tanaka

发明人： Takaharu Maruyama ,  Takao Nakamura ,  Haraku Itadani ,  Ken-ichi Tanaka

IPC分类号： G01N33/53 ,  C07K14/00

CPC分类号： C07K14/705

摘要： The present inventors conducted a similarity search of the amino acid sequence of known G protein-coupled receptor proteins in GenBank, and obtained a novel human GPCR gene “BG37”. cDNA containing the ORF of the gene was cloned and its nucleotide sequence was determined. Moreover, novel GPCR “BG37” genes from mouse and rat were isolated. Use of the novel GPCR of the present invention enables screening of ligands, compounds inhibiting the binding to a ligand, and candidate compounds of pharmaceuticals which can regulate signal transduction from the “BG37” receptor.

摘要翻译： 本发明人对GenBank中已知的G蛋白偶联受体蛋白质的氨基酸序列进行了相似检索，得到了新的人GPCR基因“BG37”。 克隆含有该基因ORF的cDNA，测定其核苷酸序列。 此外，分离了来自小鼠和大鼠的新型GPCR“BG37”基因。 使用本发明的新型GPCR能够筛选配体，抑制与配体结合的化合物，以及可调节从“BG37”受体的信号转导的药物的候选化合物。

公开(公告)号：US07687822B2

公开(公告)日：2010-03-30

申请号：US11727425

申请日：2007-03-27

申请人： Youichi Nagai ,  Makoto Kiyama ,  Takao Nakamura ,  Takashi Sakurada ,  Katsushi Akita ,  Koji Uematsu ,  Ayako Ikeda ,  Koji Katayama ,  Susumu Yoshimoto

发明人： Youichi Nagai ,  Makoto Kiyama ,  Takao Nakamura ,  Takashi Sakurada ,  Katsushi Akita ,  Koji Uematsu ,  Ayako Ikeda ,  Koji Katayama ,  Susumu Yoshimoto

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/20 ,  H01L33/382 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/2076 ,  H01L2224/05599 ,  H01L2924/00011 ,  H01L2224/45099

摘要： In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface.

摘要翻译： 为了提供具有简单结构并因此可以容易地制造并且可以长期稳定地提供高发光效率的发光器件，发光器件在第一主表面侧包括n型氮化物半导体层 的氮化物半导体衬底，比在第一主表面侧的n型氮化物半导体层更远离氮化物半导体衬底设置的p型氮化物半导体层，以及放置在n型氮化物半导体层和 在第一主表面侧的p型氮化物半导体层。 氮化物半导体衬底的电阻率为0.5Ω·cm·cm·cm以下，p型氮化物半导体层一侧被下降，使得从氮化物半导体衬底的第二主表面与第一 主表面。

公开(公告)号：US07489796B2

公开(公告)日：2009-02-10

申请号：US10548672

申请日：2005-01-31

申请人： Takao Nakamura ,  Atushi Katayama ,  Masashi Yamamuro

发明人： Takao Nakamura ,  Atushi Katayama ,  Masashi Yamamuro

IPC分类号： G06K9/00 ,  G06K9/36 ,  H04L9/00

CPC分类号： G06T1/0064 ,  G06T2201/0051 ,  G06T2201/0052 ,  G06T2201/0061 ,  G06T2201/0065 ,  H04N1/32213 ,  H04N1/32229 ,  H04N1/32251 ,  H04N1/32288

摘要： A digital watermark embedding apparatus for embedding digital watermark information by superimposing macroblock patterns on an image is disclosed. The digital watermark embedding apparatus: spreads input digital watermark information to obtain an embedding series having a length corresponding to a number of pixel blocks of a macroblock pattern; selects at least a frequency from among predetermined plural frequencies according to a term value of the embedding series corresponding to a position of a pixel block in the macroblock pattern, and sets a waveform pattern corresponding to the selected frequency as a pixel of the pixel block; and amplifies, with an embedding strength value, the macroblock pattern on which a waveform pattern is superimposed on each pixel block by the waveform pattern setting unit, and superimposes the macroblock pattern on an input image like a tile.

摘要翻译： 公开了一种用于通过将宏块图案叠加在图像上来嵌入数字水印信息的数字水印嵌入装置。 数字水印嵌入装置：扩展输入的数字水印信息，得到长度对应于宏块图案的像素块数的嵌入序列; 根据与宏块图案中的像素块的位置相对应的嵌入序列的项值，从预定的多个频率中选择至少一个频率，并将与所选择的频率对应的波形图案设置为像素块的像素; 并且通过波形图案设置单元以嵌入强度值放大其上波形图案叠加在每个像素块上的宏块图案，并且将宏块图案叠加在诸如瓦片的输入图像上。

公开(公告)号：US07482934B2

公开(公告)日：2009-01-27

申请号：US11778848

申请日：2007-07-17

申请人： Norihiro Nakamura ,  Hirotaka Nishida ,  Naohiro Hirota ,  Haruo Obana ,  Ichirou Ono ,  Takeshi Miki ,  Takao Nakamura ,  Hideshi Numata

发明人： Norihiro Nakamura ,  Hirotaka Nishida ,  Naohiro Hirota ,  Haruo Obana ,  Ichirou Ono ,  Takeshi Miki ,  Takao Nakamura ,  Hideshi Numata

IPC分类号： G08B13/14

CPC分类号： G06K19/07771 ,  G06K7/10178 ,  G06K19/07749

摘要： A communication device includes a radio frequency identification tag that performs a radio communication with a predetermined device. A first metal body has an electrical conductivity. A space adjustment unit is configured to adjust a space between the first metal body and the radio frequency identification tag. The first metal body is configured to be replaced with a second metal body, and when the first metal body is replaced with the second metal body, the space adjustment unit is configured to adjust a space between the second metal body and the radio frequency identification tag.

摘要翻译： 通信设备包括与预定设备进行无线电通信的射频识别标签。 第一金属体具有导电性。 空间调整单元被配置为调整第一金属体和射频识别标签之间的空间。 第一金属体被配置为用第二金属体代替，并且当第一金属体被第二金属体代替时，空间调整单元被配置为调节第二金属体和射频识别标签之间的空间 。

公开(公告)号：US07388228B2

公开(公告)日：2008-06-17

申请号：US11174674

申请日：2005-07-06

申请人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

发明人： Hideo Tanabe ,  Shigeo Shimomura ,  Makoto Ohkura ,  Masaaki Kurita ,  Yasukazu Kimura ,  Takao Nakamura

IPC分类号： H01L21/84 ,  H01L29/76

CPC分类号： H01L27/1288 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/1368 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633

摘要： Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped with impurity of high concentration, and an LDD region arranged either between the drain region and the channel region or between the source region and the channel region and doped with impurity of low concentration. An insulation film is formed over an upper surface of the semiconductor layer and has a film thickness which decreases in a step-like manner as it extends to the channel region, the LDD region, the drain and the source regions; and a gate electrode is formed over the channel region through the insulation film. Such a constitution can enhance the numerical aperture and can suppress the magnitude of stepped portions in a periphery of the thin film transistor.

摘要翻译： 用于显示装置的薄膜晶体管每个都包括由多晶硅制成的半导体层，该多晶硅具有沟道区，沟道区两侧的漏极和源极区，掺杂有高浓度的杂质;以及LDD区，其布置在漏极区和 沟道区域或源极区域和沟道区域之间，并掺杂低浓度的杂质。 在半导体层的上表面上形成绝缘膜，其厚度随其延伸到沟道区，LDD区，漏极和源极区而呈阶梯状减小; 并且通过绝缘膜形成在沟道区域上方的栅电极。 这种结构可以提高数值孔径并且可以抑制薄膜晶体管的周边中的阶梯部分的大小。

公开(公告)号：US07374895B2

公开(公告)日：2008-05-20

申请号：US11447407

申请日：2006-06-06

申请人： Hiraku Itadani ,  Tetsuo Takimura ,  Takao Nakamura ,  Masahiko Kobayashi ,  Ken-Ichi Tanaka ,  Yusuke Hidaka ,  Masataka Ohta

发明人： Hiraku Itadani ,  Tetsuo Takimura ,  Takao Nakamura ,  Masahiko Kobayashi ,  Ken-Ichi Tanaka ,  Yusuke Hidaka ,  Masataka Ohta

IPC分类号： G01N33/566

CPC分类号： G01N33/502 ,  C07K14/705 ,  G01N2333/72

摘要： A full-length cDNA encoding a human-derived G protein-coupled receptor protein is isolated by screening a human hippocampus library. Also, a rat-derived cDNA corresponding to the human-derived cDNA is isolated. Proteins encoded by these cDNAs have an activity of lowering intracellular cAMP concentration under stimulation with histamine. These proteins are usable as tools in screening ligands thereof or in screening candidate compounds for drugs capable of regulating signal transduction from the above proteins.

摘要翻译： 通过筛选人海马文库来分离编码人衍生的G蛋白偶联受体蛋白质的全长cDNA。 此外，分离与人源cDNA相对应的来自大鼠的cDNA。 由这些cDNA编码的蛋白质具有降低组胺刺激下细胞内cAMP浓度的活性。 这些蛋白质可用作筛选其配体或筛选能够调节来自上述蛋白质的信号转导的药物的候选化合物的工具。

公开(公告)号：US20080076199A1

公开(公告)日：2008-03-27

申请号：US11979873

申请日：2007-11-09

申请人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

发明人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06

摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGAN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

摘要翻译： 半导体光产生装置包括发光区域3，第一Al 1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5和第二层 Al x X2 Ga 1-X2 N半导体（0 <= X2 <= 1）层7.在该半导体光产生装置中，光产生区3由III 氮化物半导体，并且包括InAlGAN半导体层。 第一Al X1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5掺杂有诸如镁的p型掺杂剂，并且是 设置在发光区域3上。第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 < 第一Al 2 N 2 Ga 1-X 2 N半导体（0 <= X2 <= 1 / 1）层7设置在发光区域3和第一Al 1 N 1 Ga 1-X1 N半导体层5之间。

公开(公告)号：US20070292612A1

公开(公告)日：2007-12-20

申请号：US11808960

申请日：2007-06-14

申请人： Masaki Ueno ,  Toshio Ueda ,  Takao Nakamura ,  Koichi Ishikawa ,  Ken Takahashi ,  Osamu Yasaku ,  Kazuo Ujiie ,  Kikurou Takemoto

发明人： Masaki Ueno ,  Toshio Ueda ,  Takao Nakamura ,  Koichi Ishikawa ,  Ken Takahashi ,  Osamu Yasaku ,  Kazuo Ujiie ,  Kikurou Takemoto

IPC分类号： C23C16/00

CPC分类号： C23C16/4482 ,  C23C16/52

摘要： A metal-organic vaporizing and feeding apparatus includes: a retention vessel for retaining a metal-organic material; a bubbling gas feeding path connected to the retention vessel, for feeding bubbling gas to the metal-organic material; a metal-organic gas feeding path connected to the retention vessel, for feeding metal-organic gas generated in the retention vessel and dilution gas to a deposition chamber; a dilution gas feeding path connected to the metal-organic gas feeding path, for feeding the dilution gas to the metal-organic gas feeding path; a flow rate regulator provided in the bubbling gas feeding path, for regulating flow rate of the bubbling gas; a pressure regulator for regulating pressure of the dilution gas; and a sonic nozzle disposed in the metal-organic gas feeding path on a downstream side of a connecting position between the metal-organic gas feeding path and the dilution gas feeding path.

摘要翻译： 一种金属有机气化和输送装置，包括：用于保持金属 - 有机材料的保留容器; 连接到保持容器的鼓泡气体供给路径，用于将鼓泡气体供给到金属有机材料; 连接到保持容器的金属有机气体供给路径，用于将在保留容器中产生的金属有机气体和稀释气体供给到沉积室; 连接到金属 - 有机气体供给路径的稀释气体供给路径，用于将稀释气体供给到金属 - 有机气体供给路径; 设置在鼓泡气体供给路径中的流量调节器，用于调节发泡气体的流量; 用于调节稀释气体的压力的压力调节器; 以及设置在金属 - 有机气体供给路径之间的金属 - 有机气体供给路径和稀释气体供给路径之间的连接位置的下游侧的声波喷嘴。

公开(公告)号：US07294867B2

公开(公告)日：2007-11-13

申请号：US11032230

申请日：2005-01-11

申请人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

发明人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

IPC分类号： H01L33/00 ,  H01L29/24

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06

摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGaN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

摘要翻译： 半导体光产生装置包括发光区域3，第一Al X1 X 1 Ga 1-X1 N半导体（0 <= X 1 <= 1）层5和 第二Al x X2 Ga 1-X2 N半导体（0 <= X 2 <= 1）层7。 在该半导体发光元件中，发光区域3由III族氮化物半导体构成，具有InAlGaN半导体层。 第一Al X1 X1＆lt; 1-X1＆gt; N半导体（0 <= X 1 <= 1）层5掺杂有诸如镁的p型掺杂剂，以及 设置在发光区域3上。 第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 Ga 1 -X1 N半导体层5。 第二Al X2 X2 Ga 1-X2 N半导体（0 <= X 2 <= 1）层7设置在发光区3和第一Al _{X1 1-X1 N半导体层5。}