摘要:
A composition of matter for a recording medium in atomic force data storage devices. The composition includes polyimide oligomers having covalently bonded monomers forming a backbone, the oligomer thermally stable to at least 400° C.; one or more covalent bonding cross-linking moieties incorporated into the polyimide oligomer; and one or more hydrogen bonding cross-linking moieties incorporated into the polyimide oligomer. The covalent and hydrogen bonding cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles.
摘要:
Dielectric compositions comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The compositions are useful in the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric compositions are prepared by admixing a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer in a suitable solvent, heating the admixture to cure the polymer and provide a vitrified matrix, and then decomposing the porogen using heat, radiation, or a chemical reagent effective to degrade the porogen. The highly porous dielectric materials so prepared have an exceptionally low dielectric constant on the order of 2.5 or less, preferably less than about 2.0. Integrated circuit devices and integrated circuit packaging devices manufactured so as to contain the dielectric material of the invention are provided as well.
摘要:
Crosslinked particles are provided that are useful in the manufacture of dielectric materials for use in electronic devices such as integrated circuits. The crosslinked particles are prepared by activating crosslinkable groups on synthetic polymer molecules, where the crosslinkable groups are inert until activated and, when activated, undergo an irreversible intramolecular crosslinking reaction to form crosslinked particles.
摘要:
Defect-free dielectric coatings comprised of porous polymeric matrices are prepared using nitrogen-containing polymers as pore-generating agents. The dielectric coatings are useful in a number of contexts, including the manufacture of electronic devices such as integrated circuit devices and integrated circuit packaging devices. The dielectric coatings are prepared by admixing, in a solvent, a polymeric nitrogenous porogen with a high temperature, thermosetting host polymer miscible therewith, coating a substrate surface with the admixture, heating the uncured coating to cure the host polymer and provide a vitrified, two-phase matrix, and then decomposing the porogen. The dielectric coatings so prepared have few if any defects, and depending on the amount and molecular weight of porogen used, can be prepared so as to have an exceptionally low dielectric constant on the order of 2.5 or less, preferably less than about 2.0. Integrated circuit devices and integrated circuit packaging devices manufactured so as to contain the dielectric material of the invention are provided as well.
摘要:
A process for planarizing a patterned metal structure for a magnetic thin film head includes the steps of applying an encapsulation/planarizing material on a substrate, spinning the substrate in a photoresist spinner or similar machine, curing the encapsulation/planarizing layer by energetic particles such as an electron beam. The planarizing process further comprises the step of polishing the entire structure using a conventional chemical-mechanical polishing step. The curing step takes place at the substrate temperature less than 200° C., which prevents the damages of the thin film head structures such as MR and GMR sensors. This process is cheap, efficient and easy to apply.
摘要:
Multifunctional electroactive copolymers are provided. The copolymers may be A-B-A triblock copolymers, brush-type graft copolymers, or variations thereof. In a preferred embodiment, the copolymers are “dual use” in that they comprise both a light emitting segment and a charge transport segment. Methods of synthesizing the novel electroactive copolymers are provided as well, as are opto-electronic devices, particularly LEDs, fabricated with the novel copolymers.
摘要:
The invention relates to a dielectric material and a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises condensed organic polysilica and porous particles.
摘要:
The invention relates to an organic electroluminescent device comprising a light-emitting composition disposed between a first and second electrode. The composition comprises poly(fluorene-co-anthracene).
摘要:
The present invention relates to a process for forming a foamed elastomeric polymer. The process involves forming a reverse emulsion of liquid droplets in a continuous liquid phase of polymer precursor and then polymerizing the precursor to entrap uniformly distributed droplets of the liquid in pores formed in the polymer bulk. The liquid in the pores is then removed under supercritical conditions.
摘要:
The invention relates to a process for making a foamed polymer. The process involves (a) dispersing thermally degradable solid particles in polymer precursor; (b) crosslinking the polymer precursor to form a rigid, crosslinked polymer without degrading the particles; and (c) heating the polymer to degrade the particles and form the polymer foam.