Memory component with error-detect-correct code interface

    公开(公告)号:US11762737B2

    公开(公告)日:2023-09-19

    申请号:US17956516

    申请日:2022-09-29

    Applicant: Rambus Inc.

    CPC classification number: G06F11/1076 G06F11/1048

    Abstract: A memory component internally generates and stores the check bits of error detect and correct code (EDC). In a first mode, during a read transaction, the check bits are sent to the memory controller along with the data on the data mask (DM) signal lines. In a second mode, an unmasked write transaction is defined where the check bits are sent to the memory component on the data mask signal lines. In a third mode, a masked write transaction is defined where at least a portion of the check bits are sent from the memory controller on the data signal lines coincident with an asserted data mask signal line. By sending the check bits along with the data, the EDC code can be used to detect and correct errors that occur between the memory component and the memory controller.

    Edge enhancement for signal transmitter

    公开(公告)号:US11750426B2

    公开(公告)日:2023-09-05

    申请号:US17864100

    申请日:2022-07-13

    Applicant: Rambus Inc.

    CPC classification number: H04L27/04 H04L27/08

    Abstract: A signal transmitter circuit includes an output driver circuit configured to transmit a signal using a multi-level pulse amplitude modulation (PAM) scheme comprising a plurality of discreet signal levels. During operation, the output driver initiates a first transition of the signal to a first level of the multi-level PAM scheme from a second level of the multi-level PAM scheme, and initiates a second transition of the signal to the first level from a third level of the multi-level PAM scheme. The signal transmitter further includes a control circuit configured to control a slew rate of the signal transmitter circuit to cause the signal to reach a threshold voltage level at a first time, the first time occurring a first duration of time after the first transition is initiated, and to cause the signal to reach the threshold voltage level at a second time, the second time occurring the first duration of time after the second transition is initiated.

    Low power edge and data sampling
    108.
    发明授权

    公开(公告)号:US11750359B2

    公开(公告)日:2023-09-05

    申请号:US17676425

    申请日:2022-02-21

    Applicant: Rambus Inc.

    Inventor: Jared L. Zerbe

    CPC classification number: H04L7/0332 H04L7/0008 H04L7/0033 H04L7/0037

    Abstract: An integrated circuit receiver is disclosed comprising a data receiving circuit responsive to a timing signal to detect a data signal and an edge receiving circuit responsive to the timing signal to detect a transition of the data signal. One of the data or edge receiving circuits comprises an integrating receiver circuit while the other of the data or edge sampling circuits comprises a sampling receiver circuit.

    Buffer circuit with adaptive repair capability

    公开(公告)号:US11735287B2

    公开(公告)日:2023-08-22

    申请号:US18074188

    申请日:2022-12-02

    Applicant: Rambus Inc.

    Abstract: A buffer circuit is disclosed. The buffer circuit includes a command address (C/A) interface to receive an incoming activate (ACT) command and an incoming column address strobe (CAS) command. A first match circuit includes first storage to store failure row address information associated with the memory, and first compare logic. The first compare logic is responsive to the ACT command, to compare incoming row address information to the stored failure row address information. A second match circuit includes second storage to store failure column address information associated with the memory, and second compare logic. The second compare logic is responsive to the CAS command, to compare the incoming column address information to the stored failure column address information. Gating logic maintains a state of a matching row address identified by the first compare logic during the comparison carried out by the second compare logic.

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