公开(公告)号：US20150021780A1

公开(公告)日：2015-01-22

申请号：US13946949

申请日：2013-07-19

申请人： Yuping Gong ,  Yan Xun Xue ,  Ming-Chen Lu ,  Ping Huang ,  Jun Lu ,  Hamza Yilmaz

发明人： Yuping Gong ,  Yan Xun Xue ,  Ming-Chen Lu ,  Ping Huang ,  Jun Lu ,  Hamza Yilmaz

IPC分类号： H01L23/13 ,  H01L23/00

CPC分类号： H05K3/306 ,  H01L23/13 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L24/06 ,  H01L24/24 ,  H01L24/25 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/49 ,  H01L24/82 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/89 ,  H01L24/92 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/24101 ,  H01L2224/24147 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/40245 ,  H01L2224/4103 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82102 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85 ,  H01L2224/92224 ,  H01L2924/00014 ,  H01L2924/0781 ,  H01L2924/13091 ,  H01L2924/15153 ,  H05K3/32 ,  H05K3/4697 ,  Y10T29/4913 ,  Y10T29/49139 ,  Y10T29/49165 ,  Y10T29/49169 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/8384 ,  H01L2224/8485 ,  H01L2224/8385

摘要： A thin power device comprises a substrate having a first set of first contact pads at a front surface of the substrate electrically connecting to a second set of second contact pads at a back surface of the substrate, a through opening opened from the front surface and through the substrate exposing a third contact pad at the back surface of the substrate, a semiconductor chip embedded into the through opening with a back metal layer at a back surface of the semiconductor chip attached on the third contact pad, and a plurality of conductive structures electrically connecting electrodes at a front surface of the semiconductor chip with the corresponding first contact pads in the first sets of first contact pads.

摘要翻译： 薄功率器件包括衬底，衬底在衬底的前表面处具有第一组第一接触焊盘，电连接到衬底的背面处的第二组第二接触焊盘，从前表面开口并穿过 所述基板在所述基板的背面暴露第三接触焊盘，在所述第三接触焊盘的所述半导体芯片的后表面处嵌入所述通孔中的背面金属层的半导体芯片，以及多个导电结构， 将所述半导体芯片的前表面处的电极与所述第一组第一接触焊盘中的对应的第一接触焊盘连接。

公开(公告)号：US08933550B2

公开(公告)日：2015-01-13

申请号：US13442757

申请日：2012-04-09

申请人： Yan Xun Xue ,  Anup Bhalla ,  Jun Lu

发明人： Yan Xun Xue ,  Anup Bhalla ,  Jun Lu

IPC分类号： H01L23/22 ,  H01L29/40 ,  H01L23/495 ,  H01L23/00

CPC分类号： H01L23/49575 ,  H01L23/49562 ,  H01L23/49589 ,  H01L24/37 ,  H01L24/39 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/40245 ,  H01L2224/45014 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49177 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/84

摘要： A semiconductor package for power converter application comprises a low-side MOSFET chip and a high-side MOSFET chip stacking one over the other. The semiconductor package may further enclose a capacitor whereas the capacitor may be a discrete component or an integrated component on chip level with the low-side MOSFET. The semiconductor package may further comprise a PIC chip to provide a complete power converter on semiconductor chip assembly package level.

摘要翻译： 用于功率转换器应用的半导体封装包括低边MOSFET芯片和高边MOSFET芯片。 半导体封装可以进一步包围电容器，而电容器可以是分立元件或芯片级与低边MOSFET的集成元件。 半导体封装还可以包括PIC芯片，以在半导体芯片组件封装级别上提供完整的功率转换器。

公开(公告)号：US20140284384A1

公开(公告)日：2014-09-25

申请号：US14355613

申请日：2011-11-07

申请人： Jun Lu ,  Yong Liu ,  Yujiun Paul Wang

发明人： Jun Lu ,  Yong Liu ,  Yujiun Paul Wang

IPC分类号： G06K7/10

CPC分类号： G06K7/10722

摘要： An optical indicia reading terminal can comprise a microprocessor, a memory, an image sensor integrated circuit including a two-dimensional image sensor, and a hand held housing encapsulating the two-dimensional image sensor. The image sensor integrated circuit can be configured to output a plurality of digital signals, each digital signal being representative of light incident on at least one pixel of the two-dimensional image sensor. The optical indicia reading terminal can be configured to store in the memory a frame of monochrome image data by selectively acquiring a plurality of luminance signals from the plurality of digital signals. Each luminance signal of the plurality of luminance signals can be representative of luminance of light incident on at least one pixel of the two-dimensional image sensor. The optical indicia reading terminal can be configured to process the frame of image data for decoding decodable indicia.

摘要翻译： 光标记读取终端可以包括微处理器，存储器，包括二维图像传感器的图像传感器集成电路和封装二维图像传感器的手持外壳。 图像传感器集成电路可以被配置为输出多个数字信号，每个数字信号代表入射到二维图像传感器的至少一个像素的光。 光标记读取终端可以被配置为通过从多个数字信号中选择性地获取多个亮度信号来将存储器中的单色图像数据的帧存储在存储器中。 多个亮度信号的每个亮度信号可以代表入射到二维图像传感器的至少一个像素上的光的亮度。 光标记读取终端可以被配置为处理用于解码可解码标记的图像数据帧。

公开(公告)号：US20140191334A1

公开(公告)日：2014-07-10

申请号：US13734201

申请日：2013-01-04

申请人： Yan Xun Xue ,  Yueh-Se Ho ,  Lei Shi ,  Jun Lu ,  Liang Zhao

发明人： Yan Xun Xue ,  Yueh-Se Ho ,  Lei Shi ,  Jun Lu ,  Liang Zhao

IPC分类号： H01L23/495 ,  H01L27/088

CPC分类号： H01L23/49575 ,  H01L23/49524 ,  H01L23/49537 ,  H01L23/49562 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L27/088 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01322 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A stacked power semiconductor device includes vertical metal oxide semiconductor field-effect transistors and dual lead frames packaged with flip-chip technology. In the method of manufacturing the stacked power semiconductor device, a first semiconductor chip is flip chip mounted on the first lead frame. A mounting clips is connected to the electrode at back side of the first semiconductor chip. A second semiconductor chip is mounted on the second lead frame, which is then flipped and stacked on the mounting clip.

摘要翻译： 叠层功率半导体器件包括垂直金属氧化物半导体场效应晶体管和采用倒装芯片技术封装的双引线框架。 在制造堆叠式功率半导体器件的方法中，第一半导体芯片是安装在第一引线框上的倒装芯片。 安装夹在第一半导体芯片的背面连接到电极。 第二半导体芯片安装在第二引线框架上，然后翻转并堆叠在安装夹上。

公开(公告)号：US08722466B2

公开(公告)日：2014-05-13

申请号：US12722528

申请日：2010-03-12

申请人： Jun Lu ,  Kai Liu ,  Yan Xun Xue

发明人： Jun Lu ,  Kai Liu ,  Yan Xun Xue

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/565 ,  H01L23/3107 ,  H01L23/49517 ,  H01L23/49524 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L25/07 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/37147 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor package with connecting plate for internal connection comprise: a plurality of chips each having a plurality of contact areas on a top surface; one or more connecting plates having a plurality of electrically isolated connecting plate portions each connecting a contact area of the semiconductor chips. The method of making the semiconductor package includes the steps of connecting one or more connecting plates to a plurality of semiconductor chips, applying a molding material to encapsulate the chips and the connecting plates, separating a plurality of connecting plate portions of the connecting plates by shallow cutting through or by grinding.

摘要翻译： 具有用于内部连接的连接板的半导体封装包括：多个芯片，每个芯片在顶表面上具有多个接触区域; 一个或多个连接板具有多个电隔离的连接板部分，每个连接板部分连接半导体芯片的接触区域。 制造半导体封装的方法包括将一个或多个连接板连接到多个半导体芯片的步骤，施加模制材料以封装芯片和连接板，将连接板的多个连接板部分分开浅 切割或磨削。

公开(公告)号：US20140114089A1

公开(公告)日：2014-04-24

申请号：US14055054

申请日：2013-10-16

申请人： Weitong DONG ,  Christian Wolfgang Hemp ,  Xiangle Jin ,  Jun Lu ,  Ulrich Scholz ,  Shengmin Su ,  Wei Xu ,  Jinsong Yang

发明人： Weitong DONG ,  Christian Wolfgang Hemp ,  Xiangle Jin ,  Jun Lu ,  Ulrich Scholz ,  Shengmin Su ,  Wei Xu ,  Jinsong Yang

IPC分类号： C07C249/02

CPC分类号： C07C213/00 ,  C07C217/76 ,  C07C249/02 ,  C07C257/08 ,  C07C257/18

摘要： The present invention relates to a process for the preparation of 4-aminobenzoamidine (4-AMBA) salts of general formula (I) preferably the salts thereof with hydrochloric or hydrobromic acid, particularly preferred the dichloride salt.

摘要翻译： 本发明涉及制备通式（I）的4-氨基苯甲脒（4-AMBA）盐的方法，优选其盐与盐酸或氢溴酸，特别优选二氯化物盐。

公开(公告)号：US08581376B2

公开(公告)日：2013-11-12

申请号：US12819111

申请日：2010-06-18

申请人： Hamza Yilmaz ,  Xiaotian Zhang ,  Yan Xun Xue ,  Anup Bhalla ,  Jun Lu ,  Kai Liu ,  Yueh-Se Ho ,  John Amato

发明人： Hamza Yilmaz ,  Xiaotian Zhang ,  Yan Xun Xue ,  Anup Bhalla ,  Jun Lu ,  Kai Liu ,  Yueh-Se Ho ,  John Amato

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： H01L23/49541 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/81 ,  H01L24/84 ,  H01L2224/27013 ,  H01L2224/29101 ,  H01L2224/2929 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/4103 ,  H01L2224/45014 ,  H01L2224/48247 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/92 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01067 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2224/84 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： The present invention is directed to a lead-frame having a stack of semiconductor dies with interposed metalized clip structure. Level projections extend from the clip structure to ensure that the clip structure remains level during fabrication.

摘要翻译： 本发明涉及具有插入金属夹结构的半导体管芯堆叠的引线框架。 水平投影从夹子结构延伸，以确保夹子结构在制造过程中保持水平。

公开(公告)号：US20130221507A1

公开(公告)日：2013-08-29

申请号：US13408185

申请日：2012-02-29

申请人： Zhiqiang Niu ,  Ming-Chen Lu ,  Yan Xun Xue ,  Yan Huo ,  Hua Pan ,  Guo Feng Lian ,  Jun Lu

发明人： Zhiqiang Niu ,  Ming-Chen Lu ,  Yan Xun Xue ,  Yan Huo ,  Hua Pan ,  Guo Feng Lian ,  Jun Lu

IPC分类号： H01L23/495 ,  H01L21/56

CPC分类号： H01L23/3107 ,  H01L21/565 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/73 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor package is provided with an Aluminum alloy lead-frame without noble metal plated on the Aluminum base lead-frame. Aluminum alloy material with proper alloy composition and ratio for making an aluminum alloy lead-frame is provided. The aluminum alloy lead-frame is electroplated with a first metal electroplating layer, a second electroplating layer and a third electroplating layer in a sequence. The lead-frame electroplated with the first, second and third metal electroplating layers is then used in the fabrication process of a power semiconductor package including chip connecting, wire bonding, and plastic molding. After the molding process, the area of the lead-frame not covered by the molding compound is electroplated with a fourth metal electroplating layer that is not easy to be oxidized when exposing to air.

摘要翻译： 半导体封装设置有没有贵金属的铝合金引线框架，镀在铝基底引线框架上。 提供具有适当的合金组成和制造铝合金引线框架的比例的铝合金材料。 铝合金引线框架依次电镀有第一金属电镀层，第二电镀层和第三电镀层。 然后，利用第一，第二和第三金属电镀层电镀的引线框架用于包括芯片连接，引线接合和塑性模制的功率半导体封装的制造过程中。 在模制过程之后，未被模塑料覆盖的引线框架的区域用暴露于空气中不容易氧化的第四金属电镀层电镀。

公开(公告)号：US08481368B2

公开(公告)日：2013-07-09

申请号：US13092059

申请日：2011-04-21

申请人： Yan Xun Xue ,  Yueh-Se Ho ,  Hamza Yilmaz ,  Jun Lu

发明人： Yan Xun Xue ,  Yueh-Se Ho ,  Hamza Yilmaz ,  Jun Lu

IPC分类号： H01L21/44

CPC分类号： H01L24/49 ,  H01L23/3107 ,  H01L23/492 ,  H01L23/49503 ,  H01L23/49548 ,  H01L23/49562 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L2224/13099 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29294 ,  H01L2224/29339 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/32506 ,  H01L2224/371 ,  H01L2224/40245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/73153 ,  H01L2224/73255 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2224/83801 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2224/84 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： The invention relates to a semiconductor package of a flip chip and a method for making the semiconductor package. The semiconductor chip comprises a metal-oxide-semiconductor field effect transistor. On a die paddle including a first base, a second base and a third base, half-etching or punching is performed on the top surfaces of the first base and the second base to obtain plurality of grooves that divide the top surface of the first base into a plurality of areas comprising multiple first connecting areas, and divide the top surface of the second base into a plurality of areas comprising at least a second connecting area. The semiconductor chip is connected to the die paddle at the first connecting areas and the second connecting area.

摘要翻译： 本发明涉及倒装芯片的半导体封装以及制造半导体封装的方法。 半导体芯片包括金属氧化物半导体场效应晶体管。 在包括第一基底，第二基底和第三基底的裸片上，在第一基底和第二基底的顶表面上进行半蚀刻或冲孔，以获得多个凹槽，该凹槽将第一基底 进入包括多个第一连接区域的多个区域，并且将第二基座的顶表面分成包括至少第二连接区域的多个区域。 半导体芯片在第一连接区域和第二连接区域处连接到管芯焊盘。

公开(公告)号：US20120255409A1

公开(公告)日：2012-10-11

申请号：US13518023

申请日：2010-12-23

申请人： Aimin Deng ,  Hui Ding ,  Jun Lu ,  Jianrong Xie

发明人： Aimin Deng ,  Hui Ding ,  Jun Lu ,  Jianrong Xie

IPC分类号： C25C7/08

CPC分类号： C25C7/08 ,  Y10T83/2185 ,  Y10T83/2187 ,  Y10T83/219

摘要： An apparatus for stripping metal sheets from a cathode blank comprises: a frame; a stripping assembly disposed on the frame; and a receiving mechanism comprising at least one receiving platform which is disposed on the frame for receiving the deposited metal sheets. The stripping assembly comprises: at least one clipping mechanism for clipping a conductive member on an upper end of the cathode blank; first and second stripping mechanisms for stripping the deposited metal sheets from two surfaces of the cathode blank; a bottom positioning mechanism for positioning a lower end of the cathode blank; and first and second loosening mechanisms each comprising a push rod which is movably disposed on the frame in the transversal direction for pushing the cathode blank.

摘要翻译： 用于从阴极坯料剥离金属片的设备包括：框架; 设置在框架上的剥离组件; 以及接收机构，其包括至少一个接收平台，所述接收平台设置在所述框架上用于接收沉积的金属片。 剥离组件包括：至少一个夹持机构，用于夹住阴极坯料的上端上的导电构件; 用于从阴极坯料的两个表面剥离沉积的金属片的第一和第二剥离机构; 用于定位阴极毛坯的下端的底部定位机构; 以及第一和第二松动机构，每个包括推杆，该推杆在横向上可移动地设置在框架上以推动阴极坯料。