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公开(公告)号：US20120217580A1
公开(公告)日：2012-08-30
申请号：US13463243
申请日：2012-05-03
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66719 , H01L29/0878 , H01L29/407 , H01L29/408 , H01L29/42368 , H01L29/513 , H01L29/66734 , H01L29/7813
摘要： A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone.
摘要翻译： 半导体器件包括源极，漏极和被配置为选择性地使电流在源极和漏极之间通过的栅极。 半导体器件包括源极和漏极之间的漂移区和邻近漂移区的第一场板。 半导体器件包括将第一场板与漂移区电隔离的电介质层，并且电介质层内的电荷接近靠近漂移区的电介质层的界面。
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112.发明授权公开(公告)号：US08183666B2
公开(公告)日：2012-05-22
申请号：US12608196
申请日：2009-10-29
申请人： Hans-Joachim Schulze
发明人： Hans-Joachim Schulze
IPC分类号： H01L29/06
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0649 , H01L29/0696 , H01L29/167 , H01L29/36 , H01L29/41766 , H01L29/41775 , H01L29/7816 , Y10S257/901
摘要： A semiconductor device includes first semiconductor zones of a first conductivity type having a first dopant species of the first conductivity type and a second dopant species of a second conductivity type different from the first conductivity type. The semiconductor device also includes second semiconductor zones of the second conductivity type including the second dopant species. The first and second semiconductor zones are alternately arranged in contact with each other along a lateral direction extending in parallel to a surface of a semiconductor body. One of the first and second semiconductor zones constitute drift zones and a diffusion coefficient of the second dopant species is at least twice as large as the diffusion coefficient of the first dopant species. A concentration profile of the first dopant species along a vertical direction perpendicular to the surface of the semiconductor body includes at least two maxima.
摘要翻译： 半导体器件包括具有第一导电类型的第一掺杂物种类的第一导电类型的第一半导体区域和不同于第一导电类型的第二导电类型的第二掺杂物种类。 半导体器件还包括第二导电类型的第二半导体区，包括第二掺杂物种。 第一半导体区域和第二半导体区域沿着与半导体本体的表面平行延伸的横向方向彼此交替布置。 第一和第二半导体区域中的一个构成漂移区，并且第二掺杂物种类的扩散系数至少是第一掺杂剂物质的扩散系数的两倍。 垂直于半导体本体表面的垂直方向的第一掺杂剂物质的浓度分布包括至少两个最大值。
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113.发明授权公开(公告)号：US08159022B2
公开(公告)日：2012-04-17
申请号：US12241910
申请日：2008-09-30
IPC分类号： H01L29/76
CPC分类号： H01L29/7395 , H01L29/0615 , H01L29/0619 , H01L29/0834 , H01L29/1095 , H01L29/41766 , H01L29/66333
摘要： A power semiconductor component is described. One embodiment provides a semiconductor body having an inner zone and an edge zone. A base zone of a first conduction type is provided. The base zone is arranged in the at least one inner zone and the at least one edge zone. An emitter zone of a second conduction type is provided. The emitter zone is arranged adjacent to the base zone in a vertical direction of the semiconductor body. A field stop zone of the first conduction type is provided. The field stop zone is arranged in the base zone and has a first field stop zone section having a first dopant dose in the edge zone and a second field stop zone section having a second dopant dose in the inner zone. The first dopant dose is higher than the second dopant dose.
摘要翻译： 描述功率半导体部件。 一个实施例提供了具有内部区域和边缘区域的半导体本体。 提供第一导电类型的基区。 基部区域布置在至少一个内部区域和至少一个边缘区域中。 提供了第二导电类型的发射极区。 发射极区域在半导体本体的垂直方向上邻近基极区域布置。 提供第一导电类型的场停止区。 场停止区域布置在基区中并且具有在边缘区域中具有第一掺杂剂剂量的第一场停止区段区段和在内区域具有第二掺杂剂剂量的第二场停止区段区段。 第一掺杂剂剂量高于第二掺杂剂剂量。
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公开(公告)号：US20120080686A1
公开(公告)日：2012-04-05
申请号：US12895664
申请日：2010-09-30
申请人： Anton Mauder , Hans-Joachim Schulze , Hans-Joerg Timme , Franz Hirler , Francisco Javier Santos Rodriguez
发明人： Anton Mauder , Hans-Joachim Schulze , Hans-Joerg Timme , Franz Hirler , Francisco Javier Santos Rodriguez
CPC分类号： H01L29/2003 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/0262 , H01L21/306 , H01L21/30621 , H01L21/3065 , H01L21/324 , H01L21/78 , H01L29/045 , H01L29/45 , H01L29/7846 , H01L29/7848
摘要： In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is formed without completely oxidizing the first epitaxial layer.
摘要翻译： 在一个实施例中，形成半导体器件的方法包括在衬底的顶表面上形成第一多孔半导体层。 在第一多孔半导体层上形成第一外延层。 在第一外延层内和上方形成电路。 在不完全氧化第一外延层的情况下形成电路。
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115.发明申请Method for Forming a Semiconductor Device, and a Semiconductor with an Integrated Poly-Diode 有权用于形成半导体器件的方法和具有集成多极二极管的半导体公开(公告)号：US20120049270A1
公开(公告)日：2012-03-01
申请号：US12871038
申请日：2010-08-30
IPC分类号： H01L29/78 , H01L21/336 , H01L21/329
CPC分类号： H01L29/66143 , H01L21/823487 , H01L29/0626 , H01L29/1095 , H01L29/41766 , H01L29/456 , H01L29/4933 , H01L29/6609 , H01L29/6634 , H01L29/66348 , H01L29/66727 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7803 , H01L29/7804 , H01L29/7808 , H01L29/7813
摘要： A method for forming a field effect power semiconductor is provided. The method includes providing a semiconductor body, a conductive region arranged next to a main surface of the semiconductor body, and an insulating layer arranged on the main horizontal surface. A narrow trench is etched through the insulating layer to expose the conductive region. A polycrystalline semiconductor layer is deposited and a vertical poly-diode structure is formed. The polycrystalline semiconductor layer has a minimum vertical thickness of at least half of the maximum horizontal extension of the narrow trench. A polycrystalline region which forms at least a part of a vertical poly-diode structure is formed in the narrow trench by maskless back-etching of the polycrystalline semiconductor layer. Further, a semiconductor device with a trench poly-diode is provided.
摘要翻译： 提供了一种用于形成场效应功率半导体的方法。 该方法包括提供半导体本体，邻近半导体主体的主表面布置的导电区域和布置在主水平表面上的绝缘层。 通过绝缘层蚀刻窄沟槽以暴露导电区域。 沉积多晶半导体层并形成垂直多晶二极管结构。 多晶半导体层的最小垂直厚度为窄沟槽的最大水平延伸的至少一半。 通过多晶半导体层的无掩模背面蚀刻，在窄沟槽中形成形成垂直多晶二极管结构的至少一部分的多晶区域。 此外，提供了具有沟槽多晶二极管的半导体器件。
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公开(公告)号：US08120074B2
公开(公告)日：2012-02-21
申请号：US12608737
申请日：2009-10-29
IPC分类号： H01L29/745
CPC分类号： H01L29/7395 , H01L29/0834 , H01L29/1095 , H01L29/66333 , H01L29/66348 , H01L29/7397 , Y10S257/901
摘要： A bipolar semiconductor device with a hole current redistributing structure and an n-channel IGBT are provided. The n-channel IGBT has a p-doped body region with a first hole mobility and a sub region which is completely embedded within the body region and has a second hole mobility which is lower than the first hole mobility. Further, a method for forming a bipolar semiconductor device is provided.
摘要翻译： 提供了具有空穴电流再分布结构和n沟道IGBT的双极型半导体器件。 n沟道IGBT具有具有第一空穴迁移率的p掺杂体区域和完全嵌入体区内并具有低于第一空穴迁移率的第二空穴迁移率的子区域。 此外，提供了一种用于形成双极半导体器件的方法。
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公开(公告)号：US20110156095A1
公开(公告)日：2011-06-30
申请号：US12977755
申请日：2010-12-23
IPC分类号： H01L29/739
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/4236
摘要： A semiconductor component includes a first emitter zone of a first conductivity type, a second emitter zone of a second conductivity type, a first base zone arranged between the first and second emitter zones and a first control structure. The first control structure includes a control electrode arranged adjacent the first emitter zone, the control electrode being insulated from the first emitter zone by a first dielectric layer and extending in a current flow direction of the semiconductor component. The first control structure includes a first control connection and at least one first connection zone arranged between the first control connection and the control electrode and comprising a semiconductor material.
摘要翻译： 半导体部件包括第一导电类型的第一发射极区域，第二导电类型的第二发射极区域，布置在第一和第二发射极区域之间的第一基极区域和第一控制结构。 第一控制结构包括布置在第一发射区附近的控制电极，控制电极通过第一介电层与第一发射区绝缘，并沿着半导体部件的电流流动方向延伸。 第一控制结构包括第一控制连接和布置在第一控制连接和控制电极之间并且包括半导体材料的至少一个第一连接区域。
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公开(公告)号：US20110101416A1
公开(公告)日：2011-05-05
申请号：US12608737
申请日：2009-10-29
IPC分类号： H01L29/739 , H01L21/331
CPC分类号： H01L29/7395 , H01L29/0834 , H01L29/1095 , H01L29/66333 , H01L29/66348 , H01L29/7397 , Y10S257/901
摘要： A bipolar semiconductor device with a hole current redistributing structure and an n-channel IGBT are provided. The n-channel IGBT has a p-doped body region with a first hole mobility and a sub region which is completely embedded within the body region and has a second hole mobility which is lower than the first hole mobility. Further, a method for forming a bipolar semiconductor device is provided.
摘要翻译： 提供了具有空穴电流再分布结构和n沟道IGBT的双极型半导体器件。 n沟道IGBT具有具有第一空穴迁移率的p掺杂体区域和完全嵌入体区内并具有低于第一空穴迁移率的第二空穴迁移率的子区域。 此外，提供了一种用于形成双极半导体器件的方法。
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119.发明授权Capacitor structure in trench structures of semiconductor devices and semiconductor devices comprising capacitor structures of this type and methods for fabricating the same 有权包括这种类型的电容器结构的半导体器件和半导体器件的沟槽结构中的电容器结构及其制造方法公开(公告)号：US07795660B2
公开(公告)日：2010-09-14
申请号：US11223210
申请日：2005-09-12
IPC分类号： H01L29/94
CPC分类号： H01L29/66181 , H01L27/10861 , H01L28/82
摘要： A capacitor structure includes: a number of conductive regions of metallic and/or semiconducting materials and/or conductive metal compounds thereof, the conductive regions being arranged as stacked layers in a trench structure of a semiconductor device; and a dielectric surrounding the conductive regions.
摘要翻译： 电容器结构包括：多个金属和/或半导体材料的导电区域和/或其导电金属化合物，所述导电区域被布置为半导体器件的沟槽结构中的堆叠层; 以及围绕导电区域的电介质。
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公开(公告)号：US20100127304A1
公开(公告)日：2010-05-27
申请号：US12324374
申请日：2008-11-26
IPC分类号： H01L29/70 , H01L29/861 , H01L21/328 , H01L29/74
CPC分类号： H01L29/8611 , H01L29/0619 , H01L29/0623 , H01L29/0692 , H01L29/0834 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/22 , H01L29/2203 , H01L29/66128 , H01L29/7395
摘要： A bipolar semiconductor device and manufacturing method. One embodiment provides a diode structure including a structured emitter coupled to a first metallization is provided. The structured emitter includes a first weakly doped semiconductor region of a first conductivity type which forms a pn-load junction with a weakly doped second semiconductor region of the diode structure. The structured emitter includes at least a highly doped first semiconductor island of the first conductivity type which at least partially surrounds a highly doped second semiconductor island of the second conductivity type.
摘要翻译： 双极半导体器件及其制造方法。 一个实施例提供了一种二极管结构，其包括耦合到第一金属化的结构化发射极。 结构化发射器包括第一导电类型的第一弱掺杂半导体区域，其与二极管结构的弱掺杂的第二半导体区域形成pn负载结。 结构化发射器包括至少部分地围绕第二导电类型的高度掺杂的第二半导体岛的至少一个第一导电类型的高度掺杂的第一半导体岛。
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