公开(公告)号：US20100304176A1

公开(公告)日：2010-12-02

申请号：US12529560

申请日：2008-03-03

申请人： Hajime Watanabe ,  Sadao Ishihawa ,  Kiyoteru Yamamoto ,  Takahiro Imai ,  Toshihiro Oyoshi

发明人： Hajime Watanabe ,  Sadao Ishihawa ,  Kiyoteru Yamamoto ,  Takahiro Imai ,  Toshihiro Oyoshi

IPC分类号： B32B3/10 ,  C25D17/10

CPC分类号： C25D5/02 ,  C25D3/38 ,  C25D5/10 ,  C25D5/18 ,  C25D5/34 ,  C25D5/48 ,  C25D7/00 ,  C25D17/00 ,  C25F3/02 ,  H05K1/056 ,  H05K3/0085 ,  H05K3/384 ,  H05K2201/0355 ,  H05K2203/0307 ,  H05K2203/0723 ,  H05K2203/1572 ,  Y10S205/92 ,  Y10T428/12361

摘要： Problems to be Solved: To provide a process for roughening both sides of a copper plate by forming a protrusion with a fine bump shape on the both sides of the copper plate, and then to provide a process for a deterioration of an electroplating solution for plating copper to become hard to progress therein.Means for Solving the Problems: First of all, there is designed to be arranged electrodes (3, 3) as a similar pole for therebetween to be opposed to each other in an electroplating copper solution 2, and then to be arranged a copper plate 4 at therebetween. And then at first there becomes to be performed an anodic treatment for generating a copper fine particles on both surfaces of the copper plate 4, by performing an electrolytic process with the copper plate 4 as a positive electrode and the electrodes 3 as negative electrodes. And then thereafter there becomes to be performed a cathodic treatment, by performing an electroplating of copper with the copper plate 4 as a negative electrode and the electrodes 3 as positive electrodes, for the copper fine particles to be fixed onto the surfaces of the copper plate 4. Furthermore, there becomes to be formed the above mentioned protrusion with the fine bump shape thereon, by performing the anodic treatment and then the cathodic treatment as not less than one cycle thereof.

摘要翻译： 要解决的问题：提供一种通过在铜板的两面上形成具有微小凸起形状的突起来使铜板的两面粗糙化的方法，然后提供用于电镀的电镀液的劣化的工艺 铜变得难以进展。 解决问题的手段：首先，设计为在电镀铜溶液2中彼此相对的彼此相对的极性的布置的电极（3,3），然后设置为铜板4 在它们之间。 首先，通过以铜板4为正极进行电解处理，将电极3作为负极进行电镀处理，在铜板4的两面上进行阳极处理，生成铜微粒。 然后，进行阴极处理，通过以铜板4作为负极进行铜的电镀，将电极3作为正极进行阴极处理，将铜微粒固定在铜板的表面上 此外，通过进行阳极处理，然后阴极处理为不止一个循环，形成上述具有微小凸起形状的突起。

公开(公告)号：US07771693B2

公开(公告)日：2010-08-10

申请号：US12192515

申请日：2008-08-15

申请人： Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Takahiro Imai

发明人： Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Takahiro Imai

IPC分类号： B01J3/06

CPC分类号： C30B33/00 ,  C30B25/20 ,  C30B29/04 ,  Y10T428/30

摘要： A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 μm and less than 400 μm, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.

摘要翻译： 一种用于通过气相合成从金刚石单晶种子基底生长单晶的金刚石单晶衬底制造方法，包括在单晶生长之前通过反应离子蚀刻腐蚀掉至少0.5μm且小于400μm， 将已经机械抛光的种子基片的表面的厚度除去，从而从种子基片的表面除去由机械抛光引起的受影响层; 然后在其上生长单晶。 该制造方法提供具有高质量，大尺寸和无意的杂质夹杂物的金刚石单晶衬底，并且适合用作半导体材料，电子部件，光学部件等。

公开(公告)号：US20100111812A1

公开(公告)日：2010-05-06

申请号：US12684684

申请日：2010-01-08

申请人： Kiichi MEGURO ,  Yoshiyuki Yamamoto ,  Takahiro Imai

发明人： Kiichi MEGURO ,  Yoshiyuki Yamamoto ,  Takahiro Imai

IPC分类号： C01B31/06 ,  C30B25/00

CPC分类号： C30B29/04 ,  C30B25/20

摘要： The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 μm at maximum per a thickness of 100 μm across an entire of the single crystalline diamond, and also a method for producing the diamond.

摘要翻译： 本发明的目的是获得具有较小变形和大面积的高半导体器件衬底或光学部件材料的高质量单晶金刚石。 本发明是通过化学气相沉积法生产的单晶金刚石，其中当由彼此垂直的两个线性偏振光组成的线性偏振光被引入单晶金刚石的一个主面时，其最大值为 相对于从相对的主面出来的彼此垂直的两个线偏振光之间的延迟在整个单晶金刚石上的最大厚度为100μm时最大不超过50μm，还有用于制造金刚石的方法 。

公开(公告)号：US20100039707A1

公开(公告)日：2010-02-18

申请号：US12514238

申请日：2007-10-31

申请人： Yoshihiro Akahane ,  Takahiro Imai ,  Takashi Matsuura ,  Tetsuya Katayama ,  Toshihiko Ushiro

发明人： Yoshihiro Akahane ,  Takahiro Imai ,  Takashi Matsuura ,  Tetsuya Katayama ,  Toshihiko Ushiro

IPC分类号： G02B27/42 ,  G02F1/29 ,  G02B27/28 ,  G02B5/32 ,  H05H1/24 ,  G02B1/12

CPC分类号： G02B5/1857 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  G02B1/105 ,  G02B1/14 ,  G02B3/0012 ,  G02B3/0087 ,  G02B27/283 ,  G03H1/02 ,  G03H2001/0268 ,  H04N9/3129 ,  H04N9/3161 ,  H04N9/3167 ,  Y10S427/106

摘要： An Si—O containing hydrogenated carbon film as an optical film has a refractive index in a range from at least 1.48 to at most 1.85 for light of 520 nm wavelength and an extinction coefficient of less than 0.15 for light of 248 nm wavelength, wherein the refractive index and the extinction coefficient are decreased with energy beam irradiation. By utilizing such an Si—O containing hydrogenated carbon film, it is possible to provide various types of optical elements and an optical device including the same.

摘要翻译： 作为光学膜的含Si-O的氢化碳膜的波长为520nm的波长的折射率为1.48以上至1.85以下，对于波长248nm的光，其消光系数小于0.15，其中， 折射率和消光系数随能量束照射而降低。 通过使用这种含Si-O的氢化碳膜，可以提供各种类型的光学元件和包括该光学元件的光学器件。

公开(公告)号：US20090169814A1

公开(公告)日：2009-07-02

申请号：US12282137

申请日：2007-12-26

申请人： Akihiko Ueda ,  Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Akihiko Ueda ,  Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： C30B23/00 ,  H01L21/322 ,  B32B9/00 ,  B32B5/00

CPC分类号： C30B29/04 ,  C30B25/02 ,  C30B25/105 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02609 ,  H01L21/0262 ,  Y10T428/24355 ,  Y10T428/30

摘要： A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.

摘要翻译： 在磷原子/碳原子比为3的条件下，在{111}单晶衬底的主面上，在300K下生长电阻率为300Ω/ cm以下的低电阻磷掺杂外延薄膜的方法 ％以上，包括主表面的偏角为0.50°以上。 具有低电阻磷掺杂金刚石外延薄膜的金刚石单晶使得薄膜表面相对于{111}面具有0.50°或更大的偏角，并且低电阻磷掺杂金刚石外延薄膜的电阻率 电阻磷掺杂金刚石外延薄膜在300K时为300Ω·cm以下。

公开(公告)号：US20090160308A1

公开(公告)日：2009-06-25

申请号：US12095430

申请日：2007-06-27

申请人： Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/304

CPC分类号： H01J1/304 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/073 ,  H01J37/3174 ,  H01J2201/30457 ,  H01J2237/06341 ,  H01J2237/26

摘要： An object is to provide an electron emitting cathode achieving high luminance, low energy dispersion, and long life. It is therefore an object to provide a diamond electron emitting cathode graspable on a sufficiently stable basis, sharpened at the tip, and improved in electric field intensity. A diamond electron emitting cathode 110 according to the present invention is partitioned into at least three regions, i.e., a front end region 203 intended for electron emission at a tip of columnar shape, a rear end region 201 intended for grasping opposite in the longitudinal direction, and a thinned intermediate region 202, a cross-sectional area of the rear end region is not less than 0.2 mm2, the tip of the front end region is sharpened, and a maximum cross-sectional area of the thinned intermediate region is not more than 0.1 mm2.

摘要翻译： 目的是提供一种实现高亮度，低能量分散和长寿命的电子发射阴极。 因此，本发明的目的是提供一种能够在足够稳定的基础上掌握的金刚石电子发射阴极，其尖端锐化，并提高电场强度。 根据本发明的金刚石电子发射阴极110被划分成至少三个区域，即用于在柱形形状的尖端处用于电子发射的前端区域203，用于在纵向上相对握持的后端区域201 ，以及减薄的中间区域202，后端区域的截面积为0.2mm 2以上，前端区域的前端被削尖，并且变薄的中间区域的最大截面积不大 大于0.1 mm2。

公开(公告)号：US20080167475A1

公开(公告)日：2008-07-10

申请号：US12071120

申请日：2008-02-15

申请人： Toshiro Sasaki ,  Takashi Ando ,  Yasuo Yamamoto ,  Takahiro Imai ,  Dai Kubota ,  Katsuhiko Noguchi ,  Nobuyuki Hori ,  Eiki Shitara ,  Kunio Atsumi ,  Shohei Yasuda

发明人： Toshiro Sasaki ,  Takashi Ando ,  Yasuo Yamamoto ,  Takahiro Imai ,  Dai Kubota ,  Katsuhiko Noguchi ,  Nobuyuki Hori ,  Eiki Shitara ,  Kunio Atsumi ,  Shohei Yasuda

IPC分类号： C07D513/04

CPC分类号： C07D513/04 ,  C07F9/6561 ,  Y02P20/55

摘要： The present invention relates to compounds represented by formula (1) and a process for producing the same. The use of these compounds can realize the production of carbapenem derivatives having potent antimicrobial activity and a wide antimicrobial spectrum in a safe and cost-effective manner.

摘要翻译： 本发明涉及由式（1）表示的化合物及其制备方法。 这些化合物的使用可以以安全和成本有效的方式实现具有有效抗微生物活性和广谱抗菌谱的碳青霉烯衍生物的生产。

公开(公告)号：US07391145B2

公开(公告)日：2008-06-24

申请号：US11211665

申请日：2005-08-26

申请人： Natsuo Tatsumi ,  Takahiro Imai

发明人： Natsuo Tatsumi ,  Takahiro Imai

IPC分类号： H01J1/304

CPC分类号： H01J23/04 ,  H01J1/3044 ,  H01J3/022 ,  H01J9/025 ,  H01J23/06 ,  H01J2201/30457

摘要： A cold-cathode electron source is formed that successfully achieves a high frequency and a high output. Embodiments include a cold-cathode electron source comprising emitters having a tip portion tapered at an aspect ratio R of not less than 4, thereby decreasing capacitance between the emitters and a gate electrode by a degree of declination from the gate electrode, such that the cold-cathode electron source is able to operate at a high frequency. Embodiments also include a cold-cathode electron source formed of a diamond with a high melting point and a high thermal conductivity, such that the emitters operate at a high current density and at a high output.

摘要翻译： 形成冷阴极电子源，其成功实现高频和高输出。 实施例包括一种冷阴极电子源，其包括具有以不小于4的纵横比R渐缩的尖端部分的发射体，由此使源极与栅电极之间的电容从栅电极减小一定角度，使得冷 - 阴极电子源能够在高频下工作。 实施例还包括由具有高熔点和高导热性的金刚石形成的冷阴极电子源，使得发射器以高电流密度和高输出工作。

公开(公告)号：US07390695B2

公开(公告)日：2008-06-24

申请号：US11390333

申请日：2006-03-28

申请人： Kiichi Meguro ,  Keisuke Tanizaki ,  Akihiko Namba ,  Yoshiyuki Yamamoto ,  Takahiro Imai

发明人： Kiichi Meguro ,  Keisuke Tanizaki ,  Akihiko Namba ,  Yoshiyuki Yamamoto ,  Takahiro Imai

IPC分类号： H01L21/00

CPC分类号： C30B25/105 ,  C30B25/02 ,  C30B25/20 ,  C30B29/04 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02645

摘要： A manufacturing method for a large-scale diamond substrate and the produced substrate that is suitable for semiconductor lithography processing and large-scale optical parts, semiconductor materials, thermal-release substrate, semiconductor wafer processing, back-feed devices, and others. The manufacturing method of the present invention includes: preparing a substrate having a main face including a first region which is a concave and a second region which surrounds the first region, and mounting, on the first region, a single crystalline diamond seed substrate having a plate thickness thicker than the concave depth of the first region; forming a CVD diamond layer from the single crystalline diamond seed substrate using a chemical vapor deposition, and mutually connecting by forming a CVD diamond layer on the second region at the same time; and polishing to substantially flatten both the CVD diamond layers and on the second region by mechanically polishing.

摘要翻译： 适用于半导体光刻处理的大规模金刚石基板和所制造的基板的制造方法以及大型光学部件，半导体材料，热释放基板，半导体晶片加工，反馈装置等。 本发明的制造方法包括：准备具有包括第一区域的第一区域的主面和包围第一区域的第二区域的基板，以及在第一区域上安装具有第一区域的单晶金刚石种子基板 板厚度比第一区域的凹深更厚; 使用化学气相沉积从所述单晶金刚石种子基板形成CVD金刚石层，并且通过在所述第二区域上同时形成CVD金刚石层来相互连接; 并通过机械研磨抛光以使CVD金刚石层和第二区域基本平坦化。

公开(公告)号：US20080067493A1

公开(公告)日：2008-03-20

申请号：US11665472

申请日：2006-06-19

申请人： Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Yoshiyuki Yamamoto ,  Akihiko Ueda ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/30 ,  C30B29/04 ,  H01L29/06

CPC分类号： H01J1/15 ,  H01J1/14 ,  H01J37/06 ,  H01J2237/06308 ,  H01J2237/06316

摘要： An object of the present invention is to provide an electron emission cathode and an electron emission source using diamond and having a high brightness and a small energy width that are suitable for electron ray and electron beam devices and vacuum tubes, in particular, electron microscopes and electron beam exposure devices, and also electronic devices using such cathode and source. The diamond electron emission cathode according to the present invention has single crystal diamond in at least part thereof. The diamond electron emission cathode has a columnar shape having a sharpened acute section and a heating section. One electron emitting portion is provided in the sharpened acute section. The electron emitting portion and heating section comprise a diamond semiconductor. The diamond semiconductor is a p-type semiconductor having p-type impurities at 2×1015 cm−3 or higher. The semiconductor is present in the electron emitting portion. A metal layer is formed on the surface of the electron emission cathode. The metal layer is present in at least part of the heating section. The shortest distance from the electron emitting portion to an end portion of the metal layer is 500 μm or less. An electric current for heating is supplied to the heating section with a pair of current introducing terminals, and some of the introduced electrons can be emitted from the electron emitting portion.

摘要翻译： 本发明的目的是提供一种使用金刚石的电子发射阴极和电子发射源，其具有适用于电子射线和电子束装置以及真空管，特别是电子显微镜和 电子束曝光装置，以及使用这种阴极和源的电子装置。 根据本发明的金刚石电子发射阴极在其至少一部分中具有单晶金刚石。 金刚石电子发射阴极具有锐化锐角部分和加热部分的柱状。 一个电子发射部分设置在锐化的尖锐部分。 电子发射部分和加热部分包括金刚石半导体。 金刚石半导体是具有2×10 15 -3 -3以上的p型杂质的p型半导体。 半导体存在于电子发射部分中。 在电子发射阴极的表面上形成金属层。 金属层存在于加热部分的至少一部分中。 从电子发射部到金属层的端部的最短距离为500μm以下。 通过一对电流导入端子向加热部供给加热用电流，能够从电子发射部射出一些导入的电子。