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138 条记录 (耗时 0.043 秒)

    SIDEWALL IMAGE TRANSFER PROCESS EMPLOYING A CAP MATERIAL LAYER FOR A METAL NITRIDE LAYER
    111.
    发明申请
    SIDEWALL IMAGE TRANSFER PROCESS EMPLOYING A CAP MATERIAL LAYER FOR A METAL NITRIDE LAYER 失效
    使用金属氮化物层的CAP材料层的边框图像转移过程

    公开(公告)号：US20120282779A1

    公开(公告)日：2012-11-08

    申请号：US13102224

    申请日：2011-05-06

    申请人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  David V. Horak ,  Yunpeng Yin

    发明人： John C. Arnold ,  Sean D. Burns ,  Matthew E. Colburn ,  David V. Horak ,  Yunpeng Yin

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76816 ,  H01L21/76885

    摘要： A cap material layer is deposited on a metal nitride layer. An antireflective coating (ARC) layer, an organic planarizing layer (OPL), and patterned line structures are formed upon the cap material layer. The pattern in the patterned line structures is transferred into the ARC layer and the OPL. Exposed portions of the cap material layer are etched simultaneously with the etch removal of the patterned line structures and the ARC layer. The OPL is employed to etch the metal nitride layer. The patterned cap material layer located over the metal nitride layer protects the top surface of the metal nitride layer, and enables high fidelity reproduction of the pattern in the metal nitride layer without pattern distortion. The metal nitride layer is subsequently employed as an etch mask for pattern transfer into an underlying layer.

    摘要翻译： 盖材料层沉积在金属氮化物层上。 在盖材料层上形成抗反射涂层（ARC）层，有机平面化层（OPL）和图案化的线结构。 图案线结构中的图案被转移到ARC层和OPL中。 与图案化线结构和ARC层的蚀刻去除同时蚀刻盖材料层的暴露部分。 采用OPL来蚀刻金属氮化物层。 位于金属氮化物层之上的图案化盖材料层保护金属氮化物层的顶表面，并且能够在没有图案变形的情况下实现金属氮化物层中的图案的高保真度再现。 随后将金属氮化物层用作用于图案转移到下层中的蚀刻掩模。

    WAFER FILL PATTERNS AND USES
    112.
    发明申请
    WAFER FILL PATTERNS AND USES 有权
    WAFER FILL PATTERNS和用途

    公开(公告)号：US20120126294A1

    公开(公告)日：2012-05-24

    申请号：US12949148

    申请日：2010-11-18

    申请人： Martin Burkhardt ,  Matthew E. Colburn ,  Allen H. Gabor ,  Oleg Gluschenkov ,  Scott D. Halle ,  Howard S. Landis ,  Helen Wang

    发明人： Martin Burkhardt ,  Matthew E. Colburn ,  Allen H. Gabor ,  Oleg Gluschenkov ,  Scott D. Halle ,  Howard S. Landis ,  Helen Wang

    IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L29/06 ,  H01L21/302

    CPC分类号： H01L29/78 ,  H01L21/28123 ,  H01L21/32139 ,  H01L22/12 ,  H01L22/26

    摘要： A method of forming a semiconductor device having a substrate, an active region and an inactive region includes: forming a hardmask layer over the substrate; transferring a first pattern into the hardmask layer in the active region of the semiconductor device; forming one or more fills in the inactive region; forming a cut-away hole within, covering, or partially covering, the one or more fills to expose a portion of the hardmask layer, the exposed portion being within the one or more fills; and exposing the hardmask layer to an etchant to divide the first pattern into a second pattern including at least two separate elements.

    摘要翻译： 一种形成具有衬底，有源区和非活性区的半导体器件的方法包括：在衬底上形成硬掩模层; 将第一图案转移到半导体器件的有源区中的硬掩模层中; 在非活性区域中形成一个或多个填充物; 在所述一个或多个填充物内部，覆盖或部分地覆盖所述硬掩模层的一部分以暴露所述硬掩模层的一部分内的切除孔，所述暴露部分在所述一个或多个填充物内; 以及将所述硬掩模层暴露于蚀刻剂以将所述第一图案划分成包括至少两个分离元件的第二图案。

    Chemical Trim of Photoresist Lines by Means of A Tuned Overcoat
    116.
    发明申请
    Chemical Trim of Photoresist Lines by Means of A Tuned Overcoat 有权
    通过调整大衣的光刻胶线的化学修剪

    公开(公告)号：US20110129652A1

    公开(公告)日：2011-06-02

    申请号：US12983297

    申请日：2011-01-01

    申请人： Sean David Burns ,  Matthew E. Colburn ,  Steven John Holmes ,  Wu-Song Huang

    发明人： Sean David Burns ,  Matthew E. Colburn ,  Steven John Holmes ,  Wu-Song Huang

    IPC分类号： B32B3/02 ,  G03F7/20

    CPC分类号： G03F7/40 ,  Y10T428/24802

    摘要： A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.

    摘要翻译： 新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽，并且使用该工艺来制造包括nm阶（例如约22nm）的节点半导体器件的间距分裂结构。 该方法包括在基片的表面上施加平版印刷抗蚀剂层，并对平版印刷抗蚀剂层进行图形化和显影，以形成具有初始线宽的nm阶节点图像。 用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。 加热酸性聚合物涂覆的图像给图像上的热处理涂层，加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。 显影加热处理的涂层将其从图像中去除，从而在基底上产生独立的修整光刻特征。 可选地，重复前述步骤进一步减小了变窄线的线宽。 本发明还包括通过该方法生产的产品。

    RECOVERY OF HYDROPHOBICITY OF LOW-K AND ULTRA LOW-K ORGANOSILICATE FILMS USED AS INTER METAL DIELECTRICS
    119.
    发明申请
    RECOVERY OF HYDROPHOBICITY OF LOW-K AND ULTRA LOW-K ORGANOSILICATE FILMS USED AS INTER METAL DIELECTRICS 审中-公开
    作为金属电介质的低K和超低K有机硅膜的疏水性恢复

    公开(公告)号：US20110003402A1

    公开(公告)日：2011-01-06

    申请号：US12749213

    申请日：2010-03-29

    申请人： Nirupama Chakrapani ,  Matthew E. Colburn ,  Christos D. Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana V. Nitta

    发明人： Nirupama Chakrapani ,  Matthew E. Colburn ,  Christos D. Dimitrakopoulos ,  Dirk Pfeiffer ,  Sampath Purushothaman ,  Satyanarayana V. Nitta

    IPC分类号： H01L21/30

    CPC分类号： H01L21/76826 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31058 ,  H01L21/76807 ,  H01L21/76814 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R2N)XSiR′Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.

    摘要翻译： 通常用于减少集成电路中的RC延迟的是多孔有机硅酸盐的介电膜，其具有二氧化硅像主链与烷基或芳基（以增加材料的疏水性并产生自由体积）直接连接到网络中的Si原子。 Si-R键在暴露于等离子体或通常用于加工的化学处理中很少存活; 这在具有开孔细孔结构的材料中尤其如此。 当Si-R键断裂时，材料由于形成亲水硅烷醇而损失疏水性，并且低介电常数受损。 使用新型甲硅烷基化剂回收材料的疏水性的方法，其可以具有通式（R2N）XSiR'Y，其中X和Y分别为1至3和3至1的整数，并且其中R和 R'选自氢，烷基，芳基，烯丙基和乙烯基部分。 由于甲硅烷基化处理，多孔有机硅酸盐的机械强度也得到改善。