摘要:
A pointing device including a base section, an operating section shiftably supported on the base section, a magnet carried on one of the base section and the operating section, and a magneto-electro transducer carried on the other of the base section and the operating section at a location close to the magnet. The operating section includes a first part securely holding one of the magnet and the magneto-electro transducer and supported on the base section shiftably in a desired horizontal direction relative to the base section, and a second part connected to the first part and elastically biasing the first part toward a home position in a horizontal shifting range during a period when the first part is horizontally shifted along the base section. The second part of the operating section is provided integrally with a major portion substantially surrounding an entire circumference of the first part, a first connecting portion connected to the first part at one end of the major portion and a second connecting portion connected to the base section at another end of the major portion; the major portion exerting an even elastic biasing force irrespective of a shifting direction of the first part on the base section.
摘要:
A wireless mouse unit has a wireless mouse generating signals for moving a cursor across a display screen, a rechargeable secondary battery cell built into the wireless mouse, and a receiver for receiving the signals transmitted from the wireless mouse, the receiver electrically connected to and powered by a computer via a cable. The receiver includes a charging terminal for recharging the rechargeable battery when the wireless mouse is placed in the receiver, eliminating the need for a special charger to recharge the rechargeable secondary battery cell built into the wireless mouse.
摘要:
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
摘要:
A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In.sub.x Ga.sub.1-x N (0
摘要:
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
摘要:
A turn-and-bank indicator can integrate with regard to time the displacement of a pointer of the turn-and-bank indicator, the pointer indicating the turning rate of the airplane. It includes a non-contact converter which outputs an electrical signal in proportion to the deflection of the pointer; an amplifier which amplifies the output of the non-contact converter; an integrator which integrates the output of the amplifier with respect to time; and a digital display unit which displays the output from the integrator at a close position with the pointer.
摘要:
A spark plug for an internal combustion engine with both sides of a surface, on a center electrode side, of an outer electrode and/or both side portions, on the top surface of the center electrode, form wedge-shaped projections. At least one surface having the wedge-shaped projection has no plane surface but is arcuate.
摘要:
A viscous damping device positioned between a gimbal shaft and a bearing sleeve supporting the gimbal shaft is provided for damping a gyro apparatus in a rotational direction. The viscous damping device comprises first and second rings fixed to an outer periphery of the gimbal shaft. A circular groove provided in the first ring is complementary with a circular protrusion of the second ring, so that damping liquid initially poured into the circular groove is made to fill an air gap between the outer peripheries of the rings and an inner wall of the bearing sleeve by inserting the circular protrusion into the circular groove.
摘要:
An (Al, Ga, In)N light emitting device, such as a light emitting diode (LED), in which high light generation efficiency is realized by fabricating the device on non-polar or semi-polar III-Nitride crystal geometries. Because non-polar and semi-polar emitting devices have significantly lower piezoelectric effects than c-plane emitting devices, higher efficiency emitting devices at higher current densities can be realized.
摘要:
A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.