公开(公告)号：US20090294925A1

公开(公告)日：2009-12-03

申请号：US12538109

申请日：2009-08-08

申请人： Qinghuang Lin ,  Terry A. Spooner ,  Darshan D. Gandhi ,  Christy S. Tyberg

发明人： Qinghuang Lin ,  Terry A. Spooner ,  Darshan D. Gandhi ,  Christy S. Tyberg

IPC分类号： H01L29/06

CPC分类号： H01L21/3105 ,  H01L21/76805 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76834

摘要： A mechanically robust semiconductor structure with improved adhesion strength between a low-k dielectric layer and a dielectric-containing substrate is provided. In particular, the present invention provides a structure that includes a dielectric-containing substrate having an upper region including a treated surface layer which is chemically and physically different from the substrate; and a low-k dielectric material located on a the treated surface layer of the substrate. The treated surface layer and the low-k dielectric material form an interface that has an adhesion strength that is greater than 60% of the cohesive strength of the weaker material on either side of the interface. The treated surface is formed by treating the surface of the substrate with at least one of actinic radiation, a plasma and e-beam radiation prior to forming of the substrate the low-k dielectric material.

摘要翻译： 提供了具有改善的低k电介质层和含电介质衬底之间的粘附强度的机械稳固的半导体结构。 特别地，本发明提供了一种结构，其包括含电介质的衬底，其具有包括化学和物理上不同于衬底的经处理的表面层的上部区域; 以及位于所述基板的经处理的表面层上的低k电介质材料。 经处理的表面层和低k电介质材料形成界面，该界面的粘合强度大于界面两侧的较弱材料的内聚强度的60％。 经处理的表面通过在形成低k电介质材料之前用光化辐射，等离子体和电子束辐射中的至少一种来处理衬底的表面而形成。

公开(公告)号：US20090233226A1

公开(公告)日：2009-09-17

申请号：US12047435

申请日：2008-03-13

申请人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

IPC分类号： G03F7/004 ,  G03F7/20

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126

摘要： Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described.

摘要翻译： 组合，一种方法和一种光图案化混合物。 组合物包括第一和第二聚合物的共混物。 第一聚合物是取代的倍半硅氧烷共聚物。 第二聚合物是取代的倍半硅氧烷聚合物。 第二聚合物被配置为在暴露于光，热能或其组合时与第一聚合物，第二聚合物或其组合进行化学交联。 组合物包括光敏酸产生剂。 该方法包括形成膜。 膜被图案化成像，并且至少一个区域暴露于辐射。 在成像之后，烘烤该膜，其中至少一个曝光区域呈现基本上可溶的。 烘烤后，显影膜，其中保留有浮雕图案。 浮雕图案暴露于辐射。 浮雕图案被烘烤。 浮雕图案被修复。 还描述了化学放大的正色调可光图案化混合物。

公开(公告)号：US20080315347A1

公开(公告)日：2008-12-25

申请号：US11767789

申请日：2007-06-25

申请人： Griselda Bonilla ,  Shyng-Tsong Chen ,  Ronald A. DellaGuardia ,  Qinghuang Lin ,  Kelly Malone ,  Shom S. Ponoth ,  Chih-Chao Yang

发明人： Griselda Bonilla ,  Shyng-Tsong Chen ,  Ronald A. DellaGuardia ,  Qinghuang Lin ,  Kelly Malone ,  Shom S. Ponoth ,  Chih-Chao Yang

IPC分类号： H01L21/76 ,  H01L29/00

CPC分类号： H01L21/31695 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76829 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Fabricating an integrated circuit using a cap layer that includes one or more gaps or voids. The gaps or voids are provided prior to performing deposition and cure for an inter-layer dielectric (ILD) layer adjoining the cap layer. The gaps or voids reduce and prevent tensile stress buildup by allowing for stress relaxation, hence preventing catastrophic failure of the integrated circuit.

摘要翻译： 使用包括一个或多个间隙或空隙的盖层来制造集成电路。 在对与盖层相邻的层间电介质（ILD）层进行沉积和固化之前，提供间隙或空隙。 间隙或空隙通过允许应力松弛减小并防止拉伸应力累积，从而防止集成电路的灾难性故障。

公开(公告)号：US20060105181A1

公开(公告)日：2006-05-18

申请号：US11314307

申请日：2005-12-21

申请人： Qinghuang Lin ,  Ratnam Sooriyakumaran

发明人： Qinghuang Lin ,  Ratnam Sooriyakumaran

IPC分类号： B32B27/06 ,  C08G77/04 ,  B32B9/04

CPC分类号： G03F7/0757 ,  C08G77/04 ,  C08G77/24 ,  C09D183/08 ,  G03F7/0046 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/31695 ,  H01L21/76814 ,  H01L21/7682 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

摘要： The present invention relates to ultra-large scale integrated (ULSI) interconnect structures, and more particularly to patternable low dielectric constant (low-k) materials suitable for use in ULSI interconnect structures. The patternable low-k dielectrics disclosed herein are functionalized polymers that having one or more acid-sensitive imageable functional groups.

公开(公告)号：US06653045B2

公开(公告)日：2003-11-25

申请号：US09785609

申请日：2001-02-16

申请人： Marie Angelopoulos ,  Ari Aviram ,  Wu-Song Huang ,  Ranee W. Kwong ,  Robert N. Lang ,  Qinghuang Lin ,  Wayne M. Moreau

发明人： Marie Angelopoulos ,  Ari Aviram ,  Wu-Song Huang ,  Ranee W. Kwong ,  Robert N. Lang ,  Qinghuang Lin ,  Wayne M. Moreau

IPC分类号： G03F7004

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/106

摘要： A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.

摘要翻译： 负性抗蚀剂组合物，其包含：（a）具有选自稠合脂族部分，稠环稠合芳族部分和杂环稠合芳族化合物的侧链稠合部分和与交联剂反应的位点的含硅聚合物，（b） 酸敏感性交联剂，和（c）辐射敏感性酸发生剂。 抗蚀剂组合物用于在基材中形成图案化的材料层。

公开(公告)号：US09196523B2

公开(公告)日：2015-11-24

申请号：US13616394

申请日：2012-09-14

申请人： Qinghuang Lin

发明人： Qinghuang Lin

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76802 ,  H01L21/76808 ,  H01L2221/1031

摘要： Interconnect structures are provided including at least one patterned dielectric layer located on a substrate, wherein said at least one patterned dielectric layer includes differently sized conductive features embedded therein. The differently sized conductive features are laterally adjacent to each other and are located at a same interconnect level.

摘要翻译： 提供了互连结构，其包括位于衬底上的至少一个图案化介电层，其中所述至少一个图案化电介质层包括嵌入其中的不同尺寸的导电特征。 不同尺寸的导电特征彼此横向相邻并且位于相同的互连水平。

公开(公告)号：US08896120B2

公开(公告)日：2014-11-25

申请号：US12768267

申请日：2010-04-27

申请人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

发明人： Lawrence A. Clevenger ,  Maxime Darnon ,  Qinghuang Lin ,  Anthony D. Lisi ,  Satyanarayana V. Nitta

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L21/02 ,  H01L21/31 ,  H01L21/027 ,  H01L23/522

CPC分类号： H01L21/76829 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/0276 ,  H01L21/31 ,  H01L21/7682 ,  H01L21/76825 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps of different depths are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.

摘要翻译： 公开了使用可光图案化的低k材料制造用于VLSI和ULSI器件的含气隙的金属 - 绝缘体互连结构的方法以及形成的含气隙的互连结构。 更具体地，本文所述的方法提供了内置于可光图案化的低k材料中的互连结构，其中不同深度的气隙通过光刻图案中的低k材料中的光刻来定义。 在本发明的方法中，不需要蚀刻步骤来形成气隙。 由于在形成可光图案化的低k材料内的气隙中不需要蚀刻步骤，所以本发明公开的方法提供了高度可靠的互连结构。

公开(公告)号：US08853856B2

公开(公告)日：2014-10-07

申请号：US12820880

申请日：2010-06-22

申请人： Maxime Darnon ,  Gerald W. Gibson ,  Pratik P. Joshi ,  Qinghuang Lin

发明人： Maxime Darnon ,  Gerald W. Gibson ,  Pratik P. Joshi ,  Qinghuang Lin

IPC分类号： H01L23/48 ,  B82Y35/00 ,  H01L21/768 ,  B82Y40/00 ,  H01L23/532 ,  H01L21/66

CPC分类号： H01L23/53276 ,  B82Y35/00 ,  B82Y40/00 ,  H01L21/76808 ,  H01L21/76835 ,  H01L21/76885 ,  H01L22/14 ,  H01L2221/1031 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present disclosure relates to a structure comprising 1. an electrically conductive substrate having carbon nanotubes grown thereon; 2. a cured polymeric fill matrix comprising at least one latent photoacid generator embedded around the carbon nanotubes but allowing tips of the carbon nanotubes to be exposed; 3. a layer of patterned and cured photosensitive dielectric material on the cured polymeric fill matrix, wherein tips of the carbon nanotubes are exposed within the patterns; and 4. an electrically conductive material filled into the interconnect pattern and in contact with the exposed tips of the carbon nanotubes; and to methods of making the structure and using the structure to measure the electrical characteristics of carbon nanotubes.

公开(公告)号：US08617941B2

公开(公告)日：2013-12-31

申请号：US13007644

申请日：2011-01-16

申请人： Damon Brooks Farmer ,  Qinghuang Lin ,  Yu-Ming Lin

发明人： Damon Brooks Farmer ,  Qinghuang Lin ,  Yu-Ming Lin

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/778 ,  B82Y10/00 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/66045 ,  H01L29/7781 ,  H01L29/78684

摘要： Graphene or carbon nanotube-based transistor devices and techniques for the fabrication thereof are provided. In one aspect, a transistor is provided. The transistor includes a substrate; a carbon-based material on the substrate, wherein a portion of the carbon-based material serves as a channel region of the transistor and other portions of the carbon-based material serve as source and drain regions of the transistor; a patterned organic buffer layer over the portion of the carbon-based material that serves as the channel region of the transistor; a conformal high-k gate dielectric layer disposed selectively on the patterned organic buffer layer; metal source and drain contacts formed on the portions of the carbon-based material that serve as the source and drain regions of the transistor; and a metal top-gate contact formed on the high-k gate dielectric layer.

摘要翻译： 提供了石墨烯或碳纳米管的晶体管器件及其制造技术。 在一个方面，提供晶体管。 晶体管包括衬底; 在基板上的碳基材料，其中一部分碳基材料用作晶体管的沟道区，碳基材料的其它部分用作晶体管的源极和漏极区; 在用作晶体管的沟道区域的碳基材料的部分上的图案化有机缓冲层; 选择性地设置在图案化的有机缓冲层上的保形高k栅介质层; 形成在用作晶体管的源极和漏极区域的碳基材料的部分上的金属源极和漏极接触; 以及形成在高k栅极电介质层上的金属顶栅极接触。

公开(公告)号：US20130032949A1

公开(公告)日：2013-02-07

申请号：US13606788

申请日：2012-09-07

申请人： Qinghuang Lin ,  Sanjay Mehta ,  Hosadurga Shobha

发明人： Qinghuang Lin ,  Sanjay Mehta ,  Hosadurga Shobha

IPC分类号： H01L23/48

CPC分类号： H01L23/5222 ,  H01L21/768 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76816 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L23/53295 ,  H01L2221/1026 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and methods for making the same include sidewall portions of an interlevel dielectric layer. The sidewall portions have a width less than a minimum feature size for a given lithographic technology and the width is formed by a thickness of the interlevel dielectric layer when conformally formed on vertical surfaces of a mandrel. The sidewall portions form spaced-apart openings. Conductive structures fill the spaced-apart openings and are separated by the sidewall portions to form single damascene structures.

摘要翻译： 互连结构及其制造方法包括层间电介质层的侧壁部分。 侧壁部分具有小于给定平版印刷技术的最小特征尺寸的宽度，并且当在心轴的垂直表面上共形形成时，宽度由层间电介质层的厚度形成。 侧壁部分形成间隔开的开口。 导电结构填充间隔开的开口并且被侧壁部分分开以形成单个镶嵌结构。