公开(公告)号：US20140110704A1

公开(公告)日：2014-04-24

申请号：US14060447

申请日：2013-10-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC: H01L29/788

CPC classification number: H01L27/1225 ,  H01L27/1156 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78645 ,  H01L29/7869 ,  H01L29/788

Abstract: A semiconductor device includes an oxide layer, a source electrode layer in contact with the oxide layer, a first drain electrode layer in contact with the oxide layer, a second drain electrode layer in contact with the oxide layer, a gate insulating film in contact with the oxide layer, a first gate electrode layer overlapping with the source electrode layer and the first drain electrode layer and overlapping with a top surface of the oxide layer with the gate insulating film interposed therebetween, a second gate electrode layer overlapping with the source electrode layer and the second drain electrode layer and overlapping with the top surface of the oxide layer with the gate insulating film interposed therebetween, and a third gate electrode layer overlapping with a side surface of the oxide layer with the gate insulating film interposed therebetween.

Abstract translation: 半导体器件包括氧化物层，与氧化物层接触的源极电极层，与氧化物层接触的第一漏极电极层，与氧化物层接触的第二漏极电极层，与氧化物层接触的栅极绝缘膜 所述氧化物层与所述源极电极层和所述第一漏极电极层重叠并与所述氧化物层的顶表面重叠的第一栅极电极层与所述栅极绝缘膜插入其间，与所述源极电极层重叠的第二栅电极层 所述第二漏极电极层与所述氧化物层的顶面重叠，并且所述栅极绝缘膜与所述第二漏极电极层重叠，并且所述第三栅极电极层与所述氧化物层的侧面重叠，并且所述栅极绝缘膜插入其间。

公开(公告)号：US20140092681A1

公开(公告)日：2014-04-03

申请号：US14068131

申请日：2013-10-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC: G11C7/06

CPC classification number: G11C7/062 ,  G11C7/067 ,  G11C11/40 ,  G11C2207/005 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1203 ,  H01L27/1225 ,  H01L29/155 ,  H01L29/205

Abstract: A semiconductor device includes: a source line; a bit line; a word line; a memory cell connected to the bit line and the word line; a driver circuit which drives a plurality of second signal lines and a plurality of word lines so as to select the memory cell specified by an address signal; a potential generating circuit which generates a writing potential and a plurality of reading potentials to supply to a writing circuit and a reading circuit; and a control circuit which selects one of a plurality of voltages for correction on a basis of results of the reading circuit comparing a potential of the bit line with the plurality of reading potentials.

Abstract translation: 半导体器件包括：源极线; 有点线 字线 连接到位线和字线的存储单元; 驱动电路，其驱动多个第二信号线和多个字线，以选择由地址信号指定的存储单元; 产生写入电位和多个读取电位以供给写入电路和读取电路的电位产生电路; 以及控制电路，其基于将所述位线的电位与所述多个读取电位进行比较的所述读取电路的结果来选择用于校正的多个电压中的一个。

公开(公告)号：US20140070209A1

公开(公告)日：2014-03-13

申请号：US14023295

申请日：2013-09-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Hideaki Shishido ,  Jun Koyama

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

Abstract translation: 提供一种半导体装置，其包括在提高开口率的同时增加充电容量的电容器。 此外，提供消耗更少功率的半导体器件。 一种晶体管，其包括透光半导体膜，在一对电极之间设置有电介质膜的电容器，设置在所述透光半导体膜上的绝缘膜和第一透光性导电膜， 包括在绝缘膜上。 电容器包括用作一个电极的第一透光导电膜，用作电介质的绝缘膜和面向第一透光导电膜的第二透光导电膜，绝缘膜位于其间并具有功能 作为另一个电极。 第二透光导电膜形成在与晶体管的透光半导体膜相同的表面上，并且是含有掺杂剂的金属氧化物膜。

公开(公告)号：US08659934B2

公开(公告)日：2014-02-25

申请号：US13647543

申请日：2012-10-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC: G11C11/24

CPC classification number: G11C7/12 ,  G11C11/24 ,  G11C11/405 ,  G11C2211/4016 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/1108 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1225

Abstract: An object is to provide a semiconductor device having a novel structure. A first wiring; a second wiring; a third wiring, a fourth wiring; a first transistor including a first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second gate electrode, a second source electrode, and a second drain electrode are included. The first transistor is provided over a substrate including a semiconductor material and a second transistor includes an oxide semiconductor layer.

公开(公告)号：US20140043093A1

公开(公告)日：2014-02-13

申请号：US13961066

申请日：2013-08-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H03K3/012 ,  H01L27/06

CPC classification number: H03K3/012 ,  H01L27/0629 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/1225 ,  H01L29/78648 ,  H03K19/0013

Abstract: Direct-path current is reduced in a semiconductor device including CMOS circuits. One embodiment of the present invention is a method for driving a semiconductor device that includes a first CMOS circuit between power supply lines, a first transistor between the power supply lines, a second CMOS circuit between the power supply lines, and a second transistor between an output terminal of the first CMOS circuit and an input terminal of the second CMOS circuit. The first transistor and the second transistor each have lower off-state current than a transistor included in the first CMOS circuit. In a period during which the voltage of a first signal input to the first CMOS circuit is changed, a second signal is input to the first transistor and the second transistor to turn off the first transistor and the second transistor.

Abstract translation: 在包括CMOS电路的半导体器件中，直通电流减小。 本发明的一个实施例是一种用于驱动半导体器件的方法，该半导体器件包括电源线之间的第一CMOS电路，电源线之间的第一晶体管，电源线之间的第二CMOS电路和位于电源线之间的第二晶体管 第一CMOS电路的输出端子和第二CMOS电路的输入端子。 第一晶体管和第二晶体管分别具有比包含在第一CMOS电路中的晶体管更低的截止电流。 在其中输入到第一CMOS电路的第一信号的电压改变的时段中，第二信号被输入到第一晶体管和第二晶体管，以关断第一晶体管和第二晶体管。

公开(公告)号：US20140034954A1

公开(公告)日：2014-02-06

申请号：US13957819

申请日：2013-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Hideaki Shishido ,  Jun Koyama ,  Daisuke Matsubayashi ,  Keisuke Murayama

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  G02F1/1339 ,  G02F1/134363 ,  G02F1/13454 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2201/40 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3265 ,  H01L29/7869

Abstract: To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor where a dielectric film is provided between a pair of electrodes, an insulating film provided over the light-transmitting semiconductor film, and a light-transmitting conductive film provided over the insulating film. In the capacitor, a metal oxide film containing at least indium (In) or zinc (Zn) and formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the light-transmitting conductive film serves as the other electrode, and the insulating film provided over the light-transmitting semiconductor film serves as the dielectric film.

Abstract translation: 提供一种包括电容器的半导体器件，其电容量增加而不降低开口率。 半导体器件包括：晶体管，包括透光半导体膜，电容器，其中电介质膜设置在一对电极之间;绝缘膜设置在透光半导体膜上;以及透光导电膜， 绝缘膜。 在电容器中，与晶体管中的透光性半导体膜相同的表面上形成至少含有铟（In）或锌（Zn）的金属氧化物膜作为一个电极，透光性导电膜作为 设置在透光半导体膜上的绝缘膜用作电介质膜。

公开(公告)号：US20140021459A1

公开(公告)日：2014-01-23

申请号：US14037437

申请日：2013-09-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Tatsuya Arao ,  Munehiro Azami

IPC: H01L27/32

CPC classification number: H01L27/3265 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/78633

Abstract: A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

Abstract translation: 提供一种可以防止由于泄漏或其它原因引起的栅极电压变化并且同时可以防止开口率降低的发光器件。 电容器存储器由连接布线，绝缘膜和电容布线形成。 连接布线形成在栅电极和像素的TFT的有源层上，并与有源层连接。 绝缘膜形成在连接布线上。 电容布线形成在绝缘膜上。 这种结构使得电容器存储与TFT重叠，从而在保持开口率降低的同时增加电容器存储的容量。 因此，可以避免由于泄漏或其他原因导致的栅极电压的变化，以防止OLED的亮度变化和模拟驱动中屏幕的闪烁。

公开(公告)号：US08629823B2

公开(公告)日：2014-01-14

申请号：US13763895

申请日：2013-02-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Shunpei Yamazaki

IPC: G09G3/36

CPC classification number: G09G3/3648 ,  G09G3/32 ,  G09G3/3611 ,  G09G3/3674 ,  G09G3/3688 ,  G09G2300/0408 ,  G09G2310/027 ,  G09G2310/0286 ,  G09G2320/0233 ,  H01L27/1214

Abstract: There are provided a driving circuit of a semiconductor display device which can obtain an excellent picture without picture blur (display unevenness) and with high fineness/high resolution, and the semiconductor display device. A buffer circuit used in the driving circuit of the semiconductor display device is constituted by a plurality of TFTs each having a small channel width, and a plurality of such buffer circuits are connected in parallel with each other.

Abstract translation: 提供了可以获得没有图像模糊（显示不均匀）和高细度/高分辨率的优异图像的半导体显示装置的驱动电路和半导体显示装置。 在半导体显示装置的驱动电路中使用的缓冲电路由具有小沟道宽度的多个TFT构成，并且多个这样的缓冲电路彼此并联连接。

公开(公告)号：US20140011331A1

公开(公告)日：2014-01-09

申请号：US14021168

申请日：2013-09-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai ,  Jun Koyama

IPC: H01L29/66

CPC classification number: H01L29/78621 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/13394 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/13624 ,  G02F1/136277 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13396 ,  G02F2001/13398 ,  G02F2001/136245 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1274 ,  H01L27/1288 ,  H01L29/167 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/7833 ,  H01L29/78672 ,  H01L29/78675 ,  Y10S438/919

Abstract: A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.

Abstract translation: 驱动电路的p沟道TFT具有单个漏极结构及其n沟道TFT，LDD结构。 像素TFT具有LDD结构。 设置在像素单元中的像素电极通过在至少由无机绝缘材料形成的保护绝缘膜中钻孔并形成在像素TFT的栅电极之上的孔连接到像素TFT，并且在层间绝缘膜 设置在与其紧密接触的绝缘膜上。 这些处理步骤使用6到8张照片掩模。

公开(公告)号：US20130341626A1

公开(公告)日：2013-12-26

申请号：US13898077

申请日：2013-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Murakami ,  Shunpei Yamazaki ,  Jun Koyama ,  Mitsuaki Osame ,  Yukio Tanaka ,  Yoshiharu Hirakata

IPC: H01L27/15

CPC classification number: H01L27/1244 ,  G02F1/13454 ,  G02F1/136213 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/15 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78645 ,  H01L29/78675 ,  H01L31/02164

Abstract: An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15 V/min, there is no wrap around on the electrode, and film peeling can be prevented.

Abstract translation: 本发明的目的是提供一种具有高操作特性和可靠性的半导体器件。 所采取的措施是：在有机树脂膜上包含阳极氧化膜的电极，电极的阳极氧化膜和上面的像素电极之间形成像素电容器。 由于阳极氧化膜以15V / min的单位时间的施加电压进行阳极氧化，所以在电极上没有包裹，可以防止膜剥离。