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公开(公告)号：US09828237B2
公开(公告)日：2017-11-28
申请号：US15066741
申请日：2016-03-10
CPC分类号： B81B3/0086 , B81B2201/0257 , B81B2203/0127 , H04R19/005 , H04R19/04 , H04R31/006 , H04R2201/003
摘要： In accordance with an embodiment, a MEMS device includes a first membrane element, a second membrane element spaced apart from the first membrane element, a low pressure region between the first and second membrane elements, the low pressure region having a pressure less than an ambient pressure, and a counter electrode structure comprising a conductive layer, which is at least partially arranged in the low pressure region or extends in the low pressure region. The conductive layer includes a segmentation providing an electrical isolation between a first portion of the conductive layer and a second portion of the conductive layer.
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公开(公告)号：US09828236B2
公开(公告)日：2017-11-28
申请号：US14370110
申请日：2013-01-23
发明人： Peter Dirksen , Ruediger Mauczok , Koray Karakaya , Johan Klootwijk , Bout Marcelis , Marcel Mulder
CPC分类号： B81B3/0086 , B06B1/0292 , B81B3/0027 , B81B2201/0271 , B81C1/00523 , H04R19/005 , H04R31/00 , H04R31/003
摘要： The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
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公开(公告)号：US09815686B2
公开(公告)日：2017-11-14
申请号：US15293147
申请日：2016-10-13
发明人： Benjamin Walter , Marc Faucher
CPC分类号： B81B3/0045 , B81B3/0021 , B81B3/0024 , B81B3/0086 , B81B2201/02 , B81B2201/031 , B81B2203/0118 , G01P15/123 , G01Q10/045 , G01Q20/04
摘要： A microelectromechanical device comprising a mechanical structure extending along a longitudinal direction, linked to a planar substrate by an anchorage situated at one of its ends and able to flex in a plane parallel to the substrate, the mechanical structure comprises a joining portion, which links it to each anchorage and includes a resistive region exhibiting a first and second zone for injecting an electric current to form a resistive transducer, the resistive region extending in the longitudinal direction from an anchorage and arranged so a flexion of the mechanical structure in the plane parallel to the substrate induces a non-zero average strain in the resistive region and vice versa; wherein: the first injection zone is carried by the anchorage; and the second injection zone is carried by a conducting element not fixed to the substrate and extending in a direction, termed lateral, substantially perpendicular to the longitudinal direction.
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公开(公告)号：US20170302004A1
公开(公告)日：2017-10-19
申请号：US15485069
申请日：2017-04-11
申请人： Kymeta Corporation
发明人： Ryan Stevenson , Kianoush Naeli , Mohsen Sazegar , Benjamin Sikes , Timothy Mason , Erik Shipton , Nathan Kundtz
CPC分类号： H01Q21/065 , B81B3/0086 , B81B2201/0221 , B81B2201/0271 , B81B2203/0127 , B81B2203/04 , B81C1/00158 , B81C2203/0118 , H01G5/011 , H01G5/16 , H01G5/18 , H01Q3/2676 , H01Q3/44 , H01Q7/005 , H01Q9/0457 , H01Q13/103 , H01Q21/0031 , H01Q21/0087 , H01Q21/30 , H03J3/02
摘要： An antenna having radio-frequency (RF) resonators and methods for fabricating the same are described. In one embodiment, the antenna comprises a physical antenna aperture having an array of antenna elements, where the array of antenna elements includes a plurality of radio-frequency (RF) resonators, with each RF resonator of the plurality of RF resonators having an RF radiating element with a microelectromchanical systems (MEMS) device.
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公开(公告)号：US20170297900A1
公开(公告)日：2017-10-19
申请号：US15477193
申请日：2017-04-03
申请人： INVENSENSE, INC.
发明人： Michael J. DANEMAN , Martin LIM , Xiang LI , Li-Wen HUNG
CPC分类号： B81B3/0086 , B81B2207/07 , B81C3/001 , B81C2201/019
摘要： MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.
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公开(公告)号：US09685611B2
公开(公告)日：2017-06-20
申请号：US15196197
申请日：2016-06-29
发明人： Qing Cao , Kangguo Cheng , Zhengwen Li , Fei Liu
IPC分类号： H01L21/00 , H01L49/00 , H01L29/423 , H01L21/306 , H01L21/465 , H01L21/02 , H01L27/092
CPC分类号： B81B3/0086 , B81B7/0058 , B81B2203/0307 , B81B2203/033 , B81C1/00039 , B81C1/00698 , B81C2201/017 , B81C2203/0764 , B82Y10/00 , C08K5/34 , G06N3/0635 , H01L21/00 , H01L21/02263 , H01L21/30625 , H01L21/465 , H01L27/092 , H01L29/42316 , H01L49/00
摘要： An electromechanical device comprises a substrate structure, a set of electrodes, one or more anchor trenches, and one or more multi-faced components. For example, each of the one or more multi-faced components comprises an isolation region formed on a first portion of the surface of the component, a high resistance region formed on a second portion of the surface of the component, and a low resistance region formed on a third portion of the surface of the component. For example, the synapse device is configured to provide an analog resistive output, ranging between the high resistance region and the low resistance region, from at least one of the set of electrodes in response to a pulsed voltage input to at least another one of the set of electrodes.
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公开(公告)号：US09611142B2
公开(公告)日：2017-04-04
申请号：US15077188
申请日：2016-03-22
发明人： Yasuyuki Hirata , Gen Matsuoka
CPC分类号： B81C1/00492 , B81B3/0086 , B81B2201/042 , B81B2203/0136 , B81C1/00404 , B81C1/00603 , B81C2201/0102 , B81C2201/0132 , B81C2201/0198 , G02B26/0841
摘要： At the first etching step of etching an SOI substrate from a first silicon layer side, a portion of a first structure formed of the first silicon layer is formed as a pre-structure having a larger shape than a final shape. At the mask formation step of forming a final mask on a second silicon layer side of the SOI substrate, a first mask corresponding to the final shape of the first structure is formed in the pre-structure. At the second etching step of etching the SOI substrate from the second silicon layer side, the second silicon layer and the pre-structure are, using the first mask, etched to form the final shape of the first structure.
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公开(公告)号：US20170084837A1
公开(公告)日：2017-03-23
申请号：US15196197
申请日：2016-06-29
发明人： QING CAO , Kangguo Cheng , Zhengwen Li , Fei Liu
IPC分类号： H01L49/00 , H01L27/092 , H01L21/465 , H01L21/02 , H01L29/423 , H01L21/306
CPC分类号： B81B3/0086 , B81B7/0058 , B81B2203/0307 , B81B2203/033 , B81C1/00039 , B81C1/00698 , B81C2201/017 , B81C2203/0764 , B82Y10/00 , C08K5/34 , G06N3/0635 , H01L21/00 , H01L21/02263 , H01L21/30625 , H01L21/465 , H01L27/092 , H01L29/42316 , H01L49/00
摘要： An electromechanical device comprises a substrate structure, a set of electrodes, one or more anchor trenches, and one or more multi-faced components. For example, each of the one or more multi-faced components comprises an isolation region formed on a first portion of the surface of the component, a high resistance region formed on a second portion of the surface of the component, and a low resistance region formed on a third portion of the surface of the component. For example, the synapse device is configured to provide an analog resistive output, ranging between the high resistance region and the low resistance region, from at least one of the set of electrodes in response to a pulsed voltage input to at least another one of the set of electrodes.
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公开(公告)号：US09541464B2
公开(公告)日：2017-01-10
申请号：US14293317
申请日：2014-06-02
发明人： Heikki Kuisma
CPC分类号： G01L9/12 , B81B3/0086 , B81B2201/0264 , G01L9/0072 , G01L13/00 , G01L19/0654
摘要： A microelectromechanical pressure sensor structure that comprises a planar base and side walls and a diaphragm plate. The side walls extend circumferentially away from the planar base to a top surface of the side walls. The planar base, the side walls and the diaphragm plate are attached to each other to form a hermetically closed gap in a reference pressure, and a top edge of the inner surfaces of the side walls forms a periphery of a diaphragm. The diaphragm plate comprises one or more planar material layers of which a first planar material layer spans over the periphery of the diaphragm. The top surface of the side walls comprises at least one isolation area that is not covered by the first planar material layer.
摘要翻译： 一种微机电压力传感器结构，其包括平面基座和侧壁以及隔膜板。 侧壁从平面基部周向延伸到侧壁的顶表面。 平面基座，侧壁和隔膜板彼此附接以形成参考压力的气密闭合的间隙，并且侧壁的内表面的顶部边缘形成隔膜的周边。 隔膜板包括一个或多个平面材料层，第一平面材料层跨过隔膜的周边。 侧壁的顶表面包括至少一个不被第一平面材料层覆盖的隔离区域。
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公开(公告)号：US09525071B2
公开(公告)日：2016-12-20
申请号：US14380270
申请日：2013-02-22
IPC分类号： H01L29/04 , H01L29/10 , H01L29/76 , H01L29/40 , H01L29/786 , H01L51/10 , B81B3/00 , H01L29/49 , H01L29/51 , H01L51/00 , H01L51/05
CPC分类号： H01L29/78663 , B81B3/0086 , B81B2207/015 , H01L29/4908 , H01L29/51 , H01L51/0054 , H01L51/0055 , H01L51/0097 , H01L51/0533 , H01L51/10 , Y02E10/549
摘要： A flexible high-voltage thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a dielectric layer, and a flexible semiconductor layer. The flexible semiconductor layer serves as a channel for the transistor and is in electrical communication with the source electrode and the drain electrode. The drain electrode is laterally offset from the gate electrode. The dielectric layers is configured and arranged with respect to other elements of the transistor such that the transistor is stably operable to facilitate switching of relatively high drain voltages using relatively small controlling gate voltages.
摘要翻译： 柔性高压薄膜晶体管包括栅电极，源电极，漏电极，电介质层和柔性半导体层。 柔性半导体层用作晶体管的沟道，并与源电极和漏电极电连通。 漏电极与栅电极横向偏移。 电介质层相对于晶体管的其他元件配置和布置，使得晶体管稳定可操作以便利用相对小的控制栅极电压来切换相对高的漏极电压。
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