公开(公告)号：US20090206055A1

公开(公告)日：2009-08-20

申请号：US12388843

申请日：2009-02-19

申请人： Tetsuji SATO ,  Akihiro Yoshimura

发明人： Tetsuji SATO ,  Akihiro Yoshimura

IPC分类号： H01L21/306

CPC分类号： H01J37/32633 ,  H01J37/32449 ,  H01J37/32623

摘要： In a plasma processing apparatus for performing a plasma process on a target substrate, a baffle plate has an opening through which the process passes and partitions the internal space of the processing container into a plasma process space and an exhaust space, the opening being a single continuous slit. The baffle plate is disposed in an annular gas exhaust path around the mounting table, and the slit includes a plurality of linear slit portions extending in a radial direction of the annular baffle plate and a plurality of curved slit portions, each of which interconnects ends of a pair of the adjacent linear slit portions, so that the slit is formed in a wave shape in its entirety.

摘要翻译： 在用于在目标基板上进行等离子体处理的等离子体处理装置中，挡板具有开口，工序通过该开口并将处理容器的内部空间分隔成等离子体处理空间和排气空间，该开口为单个 连续缝 挡板设置在安装台周围的环形排气通道中，狭缝包括沿环形挡板的径向延伸的多个线性狭缝部分和多个弯曲狭缝部分，每个弯曲狭缝部分将 一对相邻的线状狭缝部，使得狭缝整体形成波形。

公开(公告)号：US20090026067A1

公开(公告)日：2009-01-29

申请号：US11886799

申请日：2006-03-24

申请人： Yuichi Shiina

发明人： Yuichi Shiina

IPC分类号： C23C16/513 ,  C23C14/32

CPC分类号： C23C14/325 ,  H01J37/32633 ,  H01J2237/022

摘要： There is provided a device for removing droplets in a plasma generator by which droplets can be surely separated from a plasma traveling from an arc discharge section and can be certainly removed, so that it can be prevented for the droplets to reach an article being processed. A tubular traveling passage (3) through which plasma P and droplets D travel under mixed state is formed, an aperture (6) having a passing hole (6a) at an eccentric position is provided in the tubular traveling passage (3), and a magnetic field generating means for passing the plasma P through the eccentric passing hole (6a) of the aperture (6) is arranged on an outer circumference of the tubular traveling passage (3). The plasma P passes through the eccentric passing hole (6a) of the aperture (6) after being bent in the tubular traveling passage (3) by a magnetic field generated from the magnetic field generating means and the droplets D are removed by colliding against the wall face of the aperture (6) at the time of bending.

摘要翻译： 提供了一种用于去除等离子体发生器中的液滴的装置，通过该装置可以将液滴与从电弧放电部分移动的等离子体确定地分离，并且可以确定地去除，使得可以防止液滴到达被处理物品。 形成等离子体P和液滴D在混合状态下行进的管状行进通道（3），在管状行进通道（3）中设置有在偏心位置具有通孔（6a）的孔（6），并且 用于使等离子体P穿过孔（6）的偏心通过孔（6a）的磁场产生装置设置在管状行进通道（3）的外圆周上。 等离子体P在通过磁场产生装置产生的磁场在管状行进通道（3）中弯曲之后通过孔（6）的偏心通孔（6a），并且通过与 弯曲时孔径（6）的壁面。

公开(公告)号：US20080314571A1

公开(公告)日：2008-12-25

申请号：US12109332

申请日：2008-04-24

申请人： Daniel J. Hoffman ,  Kallol Bera

发明人： Daniel J. Hoffman ,  Kallol Bera

IPC分类号： F28F13/12 ,  F28F9/22

CPC分类号： F15D1/0005 ,  C23C14/22 ,  C23C16/44 ,  C23C16/4412 ,  C23C16/4585 ,  C23C16/4586 ,  H01J37/32009 ,  H01J37/32623 ,  H01J37/32633 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

摘要： A baffle assembly for an etching apparatus is disclosed. The baffle assembly comprises a ring and a lower baffle portion having a curved wall extending between a flange portion and a lower frame portion. A heating assembly may be present within the lower frame portion to control the temperature of the baffle. The baffle assembly may help confine the plasma within the processing space in the chamber. The ring may comprise silicon carbide and the lower baffle portion may comprise aluminum.

摘要翻译： 公开了一种用于蚀刻装置的挡板组件。 挡板组件包括环和下挡板部分，其具有在凸缘部分和下框架部分之间延伸的弯曲壁。 加热组件可能存在于下框架部分内以控制挡板的温度。 挡板组件可以帮助将等离子体限制在腔室中的处理空间内。 环可以包括碳化硅，并且下挡板部分可以包括铝。

公开(公告)号：US20080283500A1

公开(公告)日：2008-11-20

申请号：US12120713

申请日：2008-05-15

申请人： Takeharu MOTOKAWA

发明人： Takeharu MOTOKAWA

IPC分类号： C23F1/02

CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/32633 ,  H01J37/32697

摘要： A plasma processing apparatus includes a processing chamber which has a dielectric wall partly formed of a dielectric substance and in which a to-be-processed substrate is subjected to a plasma process, an induction coil which is arranged to face the dielectric wall and generates an induction electric field to generate plasma in the processing chamber, a Faraday shield which is provided to partially have openings between the dielectric wall and the induction coil to shield an electrostatic field component and pass an electromagnetic field component, and a drive mechanism which moves the Faraday shield.

摘要翻译： 等离子体处理装置包括处理室，该处理室具有部分由电介质材料形成的电介质壁，其中经处理的基板经受等离子体处理;感应线圈，其布置成面对介电壁并产生 感应电场以在处理室中产生等离子体，法拉第屏蔽件，其设置成在电介质壁和感应线圈之间部分具有开口以屏蔽静电场分量并传递电磁场分量;以及驱动机构，其使法拉第 屏蔽。

公开(公告)号：US20080156264A1

公开(公告)日：2008-07-03

申请号：US11616324

申请日：2006-12-27

申请人： James A. Fair ,  Vincent Decaux ,  Anirban Guha ,  David Cheung ,  John Keller ,  Peter Jagusch

发明人： James A. Fair ,  Vincent Decaux ,  Anirban Guha ,  David Cheung ,  John Keller ,  Peter Jagusch

IPC分类号： C23C16/00

CPC分类号： H01J37/32449 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32633 ,  H01J37/32651 ,  H01J2237/335

摘要： Embodiments of a plasma generator apparatus for ashing a work piece are provided. The apparatus includes a container adapted for continuous gas flow there through from an inlet end to an outlet end thereof. The container is fabricated of a dielectric material and adapted for ionization therein of a portion of at least one component of gas flowing therethrough. A gas flow distributor is configured to direct gas flow to a region within the container and a coil surrounds at least a portion of side walls of the container adjacent the region of the container to which the gas flow distributor directs gas flow. A radio frequency generator is coupled to the coil.

摘要翻译： 提供了用于灰化工件的等离子体发生器装置的实施例。 该装置包括适于在其中从其入口端到其出口端的连续气体流动的容器。 容器由电介质材料制成并且适于其中流过其中的至少一种气体成分的一部分进行电离。 气流分配器构造成将气流引导到容器内的区域，并且线圈围绕容器的与气流分配器引导气体流动的区域相邻的容器侧壁的至少一部分。 射频发生器耦合到线圈。

公开(公告)号：US20080149596A1

公开(公告)日：2008-06-26

申请号：US11641670

申请日：2006-12-20

申请人： Rajinder Dhindsa ,  Jerrel K. Antolik ,  Scott Stevenot

发明人： Rajinder Dhindsa ,  Jerrel K. Antolik ,  Scott Stevenot

IPC分类号： C23F1/00 ,  C23C16/513 ,  C23F1/08 ,  B05C11/00

CPC分类号： C23C16/455 ,  C23C16/4417 ,  C23C16/45517 ,  C23C16/45536 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/3299 ,  H01L21/3065

摘要： Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.

摘要翻译： 提供了用于控制在等离子体处理装置中形成的等离子体的流动电导的装置，其包括与下电极相对的上电极，以在其间形成间隙。 下电极适于支撑衬底并耦合到RF电源。 注入到间隙中的过程气体在操作期间被激发成等离子体状态。 该装置包括同心地围绕下电极并具有形成在其中的一组槽的接地环，以及用于控制通过槽的气流的机构。

公开(公告)号：US07381311B2

公开(公告)日：2008-06-03

申请号：US10693482

申请日：2003-10-21

申请人： Ivan I. Aksenov ,  Volodymyr E. Strelnytskiy ,  Volodymyr V. Vasylyev ,  Andrey A. Voevodin ,  John G. Jones ,  Jeffrey S. Zabinski

发明人： Ivan I. Aksenov ,  Volodymyr E. Strelnytskiy ,  Volodymyr V. Vasylyev ,  Andrey A. Voevodin ,  John G. Jones ,  Jeffrey S. Zabinski

IPC分类号： C23C14/32

CPC分类号： H01J37/32055 ,  H01J37/32633 ,  H01J37/3266 ,  H01J2237/022

摘要： A filtered cathodic-arc plasma source of lower plasma losses and higher output plasma current to input current efficiency is disclosed. Plasma filtering is accomplished in a right angle bend magnetic filter arranged to include the effects of at least three added magnetic coils located at the right angle bend of the filter path. These magnetic coils and other filter attributes, including an array of transverse fins and a magnetic cusp trap in the filter path, achieve desirable magnetic flux paths, lower plasma collision losses and reduced undesired particle output from the plasma filter. Multiple cathode sources, multiple plasma output ports, Larmour radius influence, equipotential magnetic flux lines and electron/ion interaction considerations are also included in the plasma source. Application of the plasma source to film coating processes is included.

摘要翻译： 公开了一种具有较低等离子体损耗和较高输出等离子体电流至输入电流效率的滤波阴极电弧等离子体源。 在直角弯曲磁性过滤器中完成等离子体过滤，其被布置为包括位于过滤器路径的直角弯曲处的至少三个添加的磁性线圈的效果。 这些磁性线圈和其它滤波器属性，包括横向翅片阵列和滤波器路径中的磁性尖瓣陷阱，实现期望的磁通路径，较低的等离子体碰撞损失和减少来自等离子体滤波器的不期望的粒子输出。 等离子体源还包括多个阴极源，多个等离子体输出端口，Larmour半径影响，等电位磁通线和电子/离子相互作用考虑。 包括等离子体源在薄膜涂覆工艺中的应用。

公开(公告)号：US20080110567A1

公开(公告)日：2008-05-15

申请号：US11751575

申请日：2007-05-21

申请人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

发明人： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

IPC分类号： H01L21/306

CPC分类号： H01J37/32633 ,  H01J37/3244 ,  H01J37/32449

摘要： A plasma reactor with plasma confinement and plasma radial distribution capability. The reactor comprises a reactor chamber including a side wall and a workpiece support pedestal in the chamber and defining a pumping annulus between the pedestal and side wall and a pumping port at a bottom of the pumping annulus. The reactor further comprises a means for confining gas flow in an axial direction through the pumping annulus to prevent plasma from flowing to the pumping port. The reactor further comprises a means for compensating for asymmetry of gas flow pattern across the pedestal arising from placement of the pumping port. The reactor further comprises a means for controlling plasma distribution having an inherent tendency to promote edge-high plasma density distribution. The means for confining gas flow is depressed below the workpiece support sufficiently to compensate for the edge-high plasma distribution tendency of the means for controlling plasma distribution.

摘要翻译： 一种具有等离子体约束和等离子体径向分布能力的等离子体反应器。 该反应器包括反应室，该反应室包括室中的侧壁和工件支撑基座，并且在基座和侧壁之间限定了泵送环形空间以及在泵送环空的底部的泵送端口。 反应器还包括用于将气流沿轴向限制通过泵送环的装置，以防止等离子体流到泵送端口。 所述反应器还包括用于补偿穿过所述基座的由所述泵送端口的放置产生的气流图案的不对称性的装置。 反应器还包括用于控制具有促进边缘 - 高等离子体密度分布的固有倾向的等离子体分布的装置。 用于限制气流的装置在工件支撑下方被压下，足以补偿用于控制等离子体分布的装置的边缘 - 高等离子体分布趋势。

公开(公告)号：US20080081128A1

公开(公告)日：2008-04-03

申请号：US11905046

申请日：2007-09-27

申请人： Takamichi Fujii

发明人： Takamichi Fujii

IPC分类号： H05H1/24

CPC分类号： H01J37/32633 ,  C23C14/0036 ,  C23C14/088 ,  C23C14/3407 ,  H01J37/32623 ,  H01J37/34 ,  H01J37/3447 ,  H01L41/1876 ,  H01L41/316

摘要： A film forming system includes a vacuum chamber introduction and discharge of film-forming gas into and from which are capable. A target holder is disposed in the vacuum chamber to hold a target, a substrate holder is opposed to the target holder and holds a film-forming substrate on which film is formed and a plasma forming portion generates plasma between the target holder and the film-forming substrate. The film-forming system is characterized by having a shield which surrounds the outer peripheral surface of the target holder facing the substrate.

摘要翻译： 成膜系统包括真空室将成膜气体引入和排出，并且从其中排出成膜气体。 目标支架设置在真空室中以保持目标，基板支架与目标支架相对并保持其上形成有膜的成膜基板，等离子体形成部分在目标支架和薄膜基板之间产生等离子体， 形成衬底。 成膜系统的特征在于具有围绕目标保持器的面向基板的外周面的屏蔽。

公开(公告)号：US20070128862A1

公开(公告)日：2007-06-07

申请号：US11556756

申请日：2006-11-06

申请人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

发明人： Paul Ma ,  Kavita Shah ,  Dien-Yeh Wu ,  Seshadri Ganguli ,  Christophe Marcadal ,  Frederick Wu ,  Schubert Chu

IPC分类号： H01L21/44 ,  H01L23/34

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01L21/28562 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a showerhead assembly comprises a showerhead and a plasma baffle that are used to disperse process gases within a plasma-enhanced vapor deposition chamber. The showerhead plate comprises an inner area configured to position the plasma baffle therein and an outer area which has a plurality of holes for emitting a process gas. The plasma baffle comprises a conical nose disposed on an upper surface to receive another process gas, a lower surface to emit the process gas and a plurality of openings configured to flow the process gas from above the upper surface into a process region. The openings are preferably slots that are positioned at predetermined angle for emitting the process gas with a circular flow pattern.

摘要翻译： 本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。 在一个实施例中，喷头组件包括用于在等离子体增强的气相沉积室内分散工艺气体的喷头和等离子体挡板。 喷头板包括配置成将等离子体挡板定位在其中的内部区域和具有用于发射处理气体的多个孔的外部区域。 等离子体挡板包括设置在上表面上以接收另一工艺气体的锥形鼻，用于发射处理气体的下表面和被配置为将工艺气体从上表面上流动到工艺区域中的多个开口。 开口优选地以预定角度定位以用于以圆形流动图案发射处理气体的槽。