公开(公告)号：US07071098B2

公开(公告)日：2006-07-04

申请号：US11028918

申请日：2005-01-03

申请人： Kyle K. Kirby ,  Shuang Meng ,  Garo J. Derderian

发明人： Kyle K. Kirby ,  Shuang Meng ,  Garo J. Derderian

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： C23C16/34 ,  C23C16/45525 ,  C23C18/1608 ,  C23C18/1879 ,  C23C18/36 ,  H01L21/28562 ,  H01L21/288 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/02372 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/13009 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

摘要： In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening at a temperature of less than or equal to about 200° C. The deposition can comprise one or both of atomic layer deposition and chemical vapor deposition, and the first material can comprise a metal nitride. A solder-wetting material is formed over a surface of the first material. The solder-wetting material can comprise, for example, nickel. Subsequently, solder is provided within the opening and over the solder-wetting material.

摘要翻译： 一方面，本发明包括制造用于半导体部件的互连的方法。 提供半导体衬底，并且形成完全贯穿衬底的开口。 第一种材料在小于或等于约200℃的温度下沿着开口的侧壁沉积。沉积可以包括原子层沉积和化学气相沉积中的一个或两个，并且第一材料可以包括金属氮化物。 在第一材料的表面上形成焊料润湿材料。 焊料润湿材料可以包括例如镍。 随后，在开口内和焊料润湿材料之上提供焊料。

公开(公告)号：US06951813B2

公开(公告)日：2005-10-04

申请号：US10406854

申请日：2003-04-04

申请人： Garo J. Derderian

发明人： Garo J. Derderian

IPC分类号： C23C16/06 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/44 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45527 ,  C23C16/06 ,  H01L21/28562

摘要： The invention includes methods of forming metal-containing layers. The layers can, in particular aspects, consist essentially of metal, or consist of metal. The desired layers can be formed by initially depositing a metal-containing layer which comprises metal and halogen atoms. Subsequently, trialkylaluminum is utilized to remove the halogen atoms from the layer. The layer remaining after removal of the halogen atoms can comprise, consist essentially, or consist of any suitable metal, and in particular aspects can consist essentially of, or consist of, titanium or titanium/aluminum.

摘要翻译： 本发明包括形成含金属层的方法。 在特定方面，这些层可以基本上由金属组成或由金属组成。 期望的层可以通过初始沉积包含金属和卤素原子的含金属层形成。 随后，使用三烷基铝从层中除去卤素原子。 在除去卤素原子之后剩余的层可以包含，基本上由或由任何合适的金属组成，并且特别地，可以由钛或钛/铝基本上由钛或钛/铝组成。

公开(公告)号：US06835664B1

公开(公告)日：2004-12-28

申请号：US10609279

申请日：2003-06-26

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri

IPC分类号： H01L21311

CPC分类号： C23C18/1283 ,  C23C18/1208 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/125 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/283 ,  H01L21/28556 ,  H01L21/31 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/318

摘要： The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture includes a precursor of a desired material within a supercritical fluid. The precursor is relatively reactive under one set of conditions and is relatively non-reactive under another set of conditions. The precursor and supercritical fluid mixture is initially provided in the chamber under the conditions at which the precursor is relatively non-reactive. Subsequently, and while maintaining the supercritical state of the supercritical fluid, the conditions within the reaction chamber are changed to the conditions under which the precursor is relatively reactive. The precursor reacts to form the desired material, and at least some of the desired material forms a film on the substrate.

摘要翻译： 本发明包括在基底上形成膜的方法。 在反应室内设置基板，并且还在室内设置混合物。 该混合物包括在超临界流体内的所需材料的前体。 前体在一组条件下是相对反应的，并且在另一组条件下相对不反应。 初始和超临界流体混合物最初在前体相对不反应的条件下在室中提供。 随后，在保持超临界流体的超临界状态的同时，将反应室内的条件变更为前体相对反应的条件。 前体反应形成所需的材料，并且所需材料中的至少一些在基材上形成膜。

公开(公告)号：US06821347B2

公开(公告)日：2004-11-23

申请号：US10191889

申请日：2002-07-08

申请人： Craig M. Carpenter ,  Allen P. Mardian ,  Ross S. Dando ,  Kimberly R. Tschepen ,  Garo J. Derderian

发明人： Craig M. Carpenter ,  Allen P. Mardian ,  Ross S. Dando ,  Kimberly R. Tschepen ,  Garo J. Derderian

IPC分类号： B05C318

CPC分类号： C23C16/45544 ,  C23C16/45565

摘要： Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

公开(公告)号：US06797337B2

公开(公告)日：2004-09-28

申请号：US10223175

申请日：2002-08-19

申请人： Ross S. Dando ,  Craig M. Carpenter ,  Allen P. Mardian ,  Garo J. Derderian ,  Dan Gealy

发明人： Ross S. Dando ,  Craig M. Carpenter ,  Allen P. Mardian ,  Garo J. Derderian ,  Dan Gealy

IPC分类号： B05D300

CPC分类号： C23C16/4481

摘要： A method and apparatus for delivering precursors to a chemical vapor deposition or atomic layer deposition chamber is provided. The apparatus includes a temperature-controlled vessel containing a precursor. An energy source is used to vaporize the precursor at its surface such that substantially no thermal decomposition of the remaining precursor occurs. The energy source may include a carrier gas, a radio frequency coupling device, or an infrared irradiation source. After the precursor is exposed to the energy source, the vaporized portion of the precursor is transported via a temperature-controlled conduit to a chemical vapor deposition or atomic deposition chamber for further processing.

摘要翻译： 提供了用于将前体输送到化学气相沉积或原子层沉积室的方法和装置。 该装置包括含有前体的温度控制容器。 使用能源在其表面蒸发前体，使得基本上不会发生剩余前体的热分解。 能量源可以包括载气，射频耦合装置或红外辐射源。 在前体暴露于能量源之后，前体的蒸发部分通过温度控制的导管输送到化学气相沉积或原子沉积室，用于进一步处理。

公开(公告)号：US06787477B2

公开(公告)日：2004-09-07

申请号：US09962472

申请日：2001-09-24

申请人： Garo J. Derderian ,  Gurtej S. Sandhu

发明人： Garo J. Derderian ,  Gurtej S. Sandhu

IPC分类号： H01L2131

CPC分类号： H01L21/31604 ,  C23C16/30 ,  C23C16/4405 ,  H01L21/31629 ,  H01L21/31691

摘要： Methods of forming dielectric layers and methods of forming capacitors are described. In one embodiment, a substrate is placed within a chemical vapor deposition reactor. In the presence of activated fluorine, a dielectric layer is chemical vapor deposited over the substrate and comprises fluorine from the activated fluorine. In another embodiment, a fluorine-comprising material is formed over at least a portion of an internal surface of the reactor. Subsequently, a dielectric layer is chemical vapor deposited over the substrate. During deposition, at least some of the fluorine-comprising material is dislodged from the surface portion and incorporated in the dielectric layer. In another embodiment, the internal surface of the reactor is treated with a gas plasma generated from a source gas comprising fluorine, sufficient to leave some residual fluorine thereover. Subsequently, a substrate is exposed within the reactor to chemical vapor deposition conditions which are effective to form a dielectric layer thereover comprising fluorine from the residual fluorine.

摘要翻译： 描述形成电介质层的方法和形成电容器的方法。 在一个实施例中，将衬底放置在化学气相沉积反应器内。 在活性氟的存在下，电介质层被化学气相沉积在衬底上并且包含来自活性氟的氟。 在另一个实施方案中，在反应器的内表面的至少一部分上形成含氟材料。 随后，介电层被化学气相沉积在衬底上。 在沉积期间，至少一些含氟材料从表面部分移出并且被并入电介质层中。 在另一个实施方案中，反应器的内表面用从包含氟的源气体产生的气体等离子体处理，足以在其上留下一些残留的氟。 随后，将基板在反应器内暴露于化学气相沉积条件，这些条件有效地形成介电层，其中包含来自残余氟的氟。

公开(公告)号：US06780766B2

公开(公告)日：2004-08-24

申请号：US10443354

申请日：2003-05-21

申请人： Cem Basceri ,  Garo J. Derderian

发明人： Cem Basceri ,  Garo J. Derderian

IPC分类号： H01L2144

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/28061 ,  H01L21/28273 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/31122 ,  H01L21/31604 ,  H01L21/32051 ,  H01L27/10811 ,  H01L27/10888 ,  H01L28/90 ,  H01L29/6659 ,  Y10S977/859

摘要： The invention includes methods of forming regions of differing composition over a substrate. A first material having a pattern of at least one substantially amorphous region and at least one substantially crystalline region is provided over the substrate. The at least one substantially amorphous region of the first material replaced with a second material, while the at least one substantially crystaline region is not replaced. The invention also includes a circuit construction comprising an electrically conductive material extending within openings in a substantially crystalline electrically insulative material, and in which the electrically conductive material corresponds to quantum dots.

摘要翻译： 本发明包括在衬底上形成不同组成的区域的方法。 具有至少一个基本非晶区域和至少一个基本上结晶区域的图案的第一材料设置在该基板上。 所述第一材料的至少一个基本非晶区域被第二材料代替，而所述至少一个基本上晶体区域不被替换。 本发明还包括电路结构，其包括在基本上结晶的电绝缘材料的开口内延伸的导电材料，并且其中导电材料对应于量子点。

公开(公告)号：US06767806B2

公开(公告)日：2004-07-27

申请号：US10243386

申请日：2002-09-13

申请人： Cem Basceri ,  Garo J. Derderian ,  Mark R. Visokay ,  John M. Drynan ,  Gurtej S. Sandhu

发明人： Cem Basceri ,  Garo J. Derderian ,  Mark R. Visokay ,  John M. Drynan ,  Gurtej S. Sandhu

IPC分类号： H01L2120

CPC分类号： H01L21/31122 ,  H01L21/28061 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/31604 ,  H01L21/32051 ,  H01L27/10811 ,  H01L27/10888 ,  H01L28/90 ,  H01L29/6659

摘要： In part, disclosed are semiconductor processing methods, methods of depositing a tungsten comprising layer over a substrate, methods of depositing a tungsten nitride comprising layer over a substrate, methods of depositing a tungsten silicide comprising layer over a substrate, methods of forming a transistor gate line over a substrate, methods of forming a patterned substantially crystalline Ta2O5 comprising material, and methods of forming a capacitor dielectric region comprising substantially crystalline Ta2O5 comprising material. In one implementation, a semiconductor processing method includes forming a substantially amorphous Ta2O5 comprising layer over a semiconductive substrate. The layer is exposed to WF6 under conditions effective to etch substantially amorphous Ta2O5 from the substrate. In one implementation, the layer is exposed to WF6 under conditions effective to both etch substantially amorphous Ta2O5 from the substrate and deposit a tungsten comprising layer over the substrate during the exposing.

摘要翻译： 部分地，公开了半导体处理方法，在衬底上沉积含钨层的方法，在衬底上沉积含氮化钨的层的方法，在衬底上沉积包含硅化钨的层的方法，形成晶体管栅极的方法 在衬底上划线，形成图案化的基本上结晶的Ta 2 O 5的材料的方法，以及形成包含基本上结晶的Ta 2 O 5的材料的电容器电介质区域的方法。 在一个实施方案中，半导体处理方法包括在半导体衬底上形成包含基本非晶态的Ta 2 O 5层。 该层在有效从底物上蚀刻基本无定形Ta 2 O 5的条件下暴露于WF6。 在一个实施方案中，该层在有效地从衬底上蚀刻基本上无定形Ta 2 O 5的条件下暴露于WF6，并在曝光期间在衬底上沉积含钨层。

公开(公告)号：US06740597B1

公开(公告)日：2004-05-25

申请号：US09653157

申请日：2000-08-31

申请人： Kevin J. Torek ,  Garo J. Derderian

发明人： Kevin J. Torek ,  Garo J. Derderian

IPC分类号： H01L21302

CPC分类号： H01L21/31138

摘要： The invention encompasses a method of removing at least some of a material from a semiconductor substrate. A feed gas is fed through an ozone generator to generate ozone. The feed gas comprises at least 99.999% O2 (by volume). The ozone, or a fragment of the ozone, is contacted with a material on a semiconductor substrate to remove at least some of the material from the semiconductor substrate. The invention also encompasses another method of removing at least some of a material from a semiconductor substrate. A mixture of ozone and organic solvent vapors is formed in a reaction chamber. At least some of the ozone and solvent vapors are contacted with a material on a semiconductor substrate to remove at least some of the material from the semiconductor substrate.

摘要翻译： 本发明包括从半导体衬底去除至少一些材料的方法。 进料气体通过臭氧发生器进料以产生臭氧。 进料气体包含至少99.999％O 2（体积）。 将臭氧或臭氧的碎片与半导体衬底上的材料接触以从半导体衬底去除至少一些材料。 本发明还包括从半导体衬底去除至少一些材料的另一种方法。 在反应室中形成臭氧和有机溶剂蒸气的混合物。 臭氧和溶剂蒸气中的至少一些与半导体衬底上的材料接触以从半导体衬底去除至少一些材料。

公开(公告)号：US06673701B1

公开(公告)日：2004-01-06

申请号：US10229887

申请日：2002-08-27

申请人： Eugene Marsh ,  Brian Vaartstra ,  Paul J. Castrovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

发明人： Eugene Marsh ,  Brian Vaartstra ,  Paul J. Castrovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

IPC分类号： C30B2502

CPC分类号： C30B25/14 ,  C23C16/45527 ,  C30B25/02

摘要： An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. The first precursor gas flowing comprises a plurality of first precursor gas pulses. The plurality of first precursor gas pulses comprises at least one total period of time between two immediately adjacent first precursor gas pulses when no gas is fed to the chamber. After forming the first monolayer on the substrate, a second precursor gas different in composition from the first is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.

摘要翻译： 原子层沉积方法包括将半导体衬底定位在原子层沉积室内。 第一前体气体流到原子层沉积室内的衬底，有效地在衬底上形成第一单层。 第一前体气体流动包括多个第一前体气体脉冲。 多个第一前体气体脉冲包括当没有气体被供给到腔室时在两个紧邻的第一前体气体脉冲之间的至少一个总时间段。 在衬底上形成第一单层之后，组成不同于第一衬底的第二前体气体流入沉积室内的衬底，有效地在第一单层上形成第二单层。 考虑了其他方面和实现。