公开(公告)号：US5262902A

公开(公告)日：1993-11-16

申请号：US970583

申请日：1992-10-26

申请人： Katsuya Okumura ,  Kazuo Kinoshita

发明人： Katsuya Okumura ,  Kazuo Kinoshita

IPC分类号： F21V9/00 ,  H01J61/40 ,  G02B5/22

CPC分类号： H01J61/40 ,  F21V9/00

摘要： A filter for absorbing radiation of a selected wave length emitted from a mercury vapor lamp is disclosed. The filter comprises a device for providing an ozone-containing gas layer positioned between the mercury vapor lamp and an object to be illuminated, which may be formed by providing a transparent space filled with the ozone-containing gas between the lamp and the object. This provides a relatively large sized filter which has a simple construction.

摘要翻译： 公开了一种用于吸收从汞蒸汽灯发射的选定波长的辐射的滤光器。 该过滤器包括用于提供位于汞蒸汽灯和被照射物体之间的含臭氧气体的装置，其可以通过在灯和物体之间提供填充有含臭氧气体的透明空间来形成。 这提供了一种具有简单结构的较大尺寸的过滤器。

公开(公告)号：US5236562A

公开(公告)日：1993-08-17

申请号：US672237

申请日：1991-03-20

申请人： Katsuya Okumura ,  Haruo Okano ,  Manabu Tsujimura ,  Akio Shibata

发明人： Katsuya Okumura ,  Haruo Okano ,  Manabu Tsujimura ,  Akio Shibata

IPC分类号： B01J3/00 ,  B01J3/02 ,  B01J12/00 ,  B01J19/08 ,  B01J19/12 ,  C01B5/00 ,  C01B7/01 ,  C01B7/19

CPC分类号： B01J19/123 ,  B01J12/00 ,  B01J19/08 ,  B01J3/006 ,  C01B5/00 ,  C01B7/012 ,  C01B7/191

摘要： A method and apparatus for discharging hydrogen from a vacuum vessel using a roughing vacuum pump and a turbo-molecular pump. During discharge of hydrogen from the vacuum vessel, a material which has excellent reactivity with hydrogen, such as a material which has been excited or ionized by microwave or laser radiation, is introduced into the exhaust system. The material reacts with hydrogen to convert hydrogen into another substance of large molecular weight, whereby the evacuating performance of the vacuum exhaust system is improved with respect to discharging of hydrogen.

公开(公告)号：US5225036A

公开(公告)日：1993-07-06

申请号：US759903

申请日：1991-09-13

申请人： Tohru Watanabe ,  Katsuya Okumura

发明人： Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/00 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L21/67069 ,  H01L21/31116 ,  H01L21/76879

摘要： A method of and apparatus for manufacturing a semiconductor device are presented wherein a silicon oxide film on an intermediate semiconductor device is etched out properly without damaging the silicon, under the condition that a difference between the etching speeds of silicon and silicon oxide film becomes small, and immediately thereafter another film is formed on the surface of the silicon with the silicon oxide film removed therefrom.

摘要翻译： 本发明提供一种制造半导体器件的方法和装置，其中在硅和氧化硅膜的蚀刻速度之间的差异变小的条件下，中间半导体器件上的氧化硅膜被正确蚀刻出去而不损坏硅， 之后立即在硅的表面上形成另一薄膜，从中除去氧化硅膜。

公开(公告)号：US5101259A

公开(公告)日：1992-03-31

申请号：US226472

申请日：1988-08-01

申请人： Tohru Watanabe ,  Katsuya Okumura

发明人： Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/31 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L23/5328 ,  H01L21/312 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/12044

摘要： A semiconductor device includes at least one wiring layer containing aluminum as the major constituent and provided through an insulating film on a semiconductor substrate on which components or elements are formed, and a heat resistant high molecular organic film having a radical of small water absorbing property provided on side surfaces of the wiring layer. The heat resisting high molecular organic film is preferably formed of polyphenylene sulfide. A method of the semiconductor device includes the steps of forming components on a semiconductor substrate, forming an insulating film on the components to form an aluminum wiring layer by deposition and patterning, depositing a heat resistant high molecular organic film having a radical of small water absorbing property, and heating the heat resistant high molecular organic film at a temperature to fluidify to and flatten the heat resistant high molecular organic film.

公开(公告)号：US5067437A

公开(公告)日：1991-11-26

申请号：US329847

申请日：1989-03-28

申请人： Tohru Watanabe ,  Katsuya Okumura

发明人： Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/316 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/768

CPC分类号： H01L21/67069 ,  H01L21/31116 ,  H01L21/76879 ,  Y10S438/913

摘要： An apparatus for forming a film on the silicon surface of an intermediate semiconductor device, wherein a silicon oxide film on the intermediate semiconductor device is etched out with an active species without damage to the silicon surface, the difference between the etching speeds of the silicon and the silicon oxide film being 5 or less. Immediately after the etching, another film is formed on the surface of the silicon without the surface being exposed to the atmosphere. Thus, the etching of the silicon oxide film and the forming of another film can be performed in the same chamber or different chambers.

公开(公告)号：US4954218A

公开(公告)日：1990-09-04

申请号：US389681

申请日：1989-08-04

申请人： Katsuya Okumura ,  Tohru Watanabe ,  Masami Watase

发明人： Katsuya Okumura ,  Tohru Watanabe ,  Masami Watase

IPC分类号： H01L21/302 ,  H01L21/033 ,  H01L21/208 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/316 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/768 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  C23F1/02

CPC分类号： H01L21/76838 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/316 ,  H01L21/32 ,  H01L21/32139 ,  H01L21/76802

摘要： A photoresist layer having a prescribed pattern is formed on a substrate to be etched. The substrate is immersed into a predetermined solution to form a layer on the substrate except on those portions where the photoresist layer is formed. The photoresist layer is removed, and the substrate is etched using the remaining layer as a mask.

公开(公告)号：US4914056A

公开(公告)日：1990-04-03

申请号：US281924

申请日：1988-12-05

申请人： Katsuya Okumura

发明人： Katsuya Okumura

IPC分类号： H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L23/5226 ,  H01L21/76885 ,  H01L2924/0002 ,  Y10S438/974

摘要： A method of manufacturing a semiconductor device having multi-layer structure with tapered pillars containing a refractory metal used for connecting interconnection layers. An aluminum containing layer is formed on the semiconductor substrate and a refractory metal (or silicide and nitride) containing layer is formed on the aluminum layer. These two layers are selectively and successively etched to form an interconnection layer having thereon a pattern formed of the refractory metal containing layer. The pattern is selectively etched to remove a portion of the pattern from the interconnection layer and leave a portion on the interconnection layer to thereby form pillars. The tapered portions are formed by isotropic etching.

摘要翻译： 一种具有多层结构的半导体器件的制造方法，该半导体器件具有锥形支柱，该锥形支柱包含用于连接互连层的难熔金属。 在半导体衬底上形成含铝层，在铝层上形成难熔金属（或硅化物和氮化物）层。 选择性地并连续蚀刻这两层以形成其上具有由难熔金属含有层形成的图案的互连层。 选择性地蚀刻图案以从互连层去除图案的一部分，并且在互连层上留下一部分从而形成支柱。 锥形部分通过各向同性蚀刻形成。

公开(公告)号：US4875088A

公开(公告)日：1989-10-17

申请号：US028386

申请日：1987-03-20

申请人： Hidemitsu Egawa ,  Riichirou Aoki ,  Katsuya Okumura

发明人： Hidemitsu Egawa ,  Riichirou Aoki ,  Katsuya Okumura

IPC分类号： H01L21/52 ,  H01L21/28 ,  H01L23/482 ,  H01L29/43 ,  H01L29/45

CPC分类号： H01L24/28 ,  H01L23/4827 ,  H01L29/456 ,  H01L2224/04026 ,  H01L2224/29111 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/10253 ,  H01L2924/14 ,  Y10S257/915

摘要： A semiconductor device includes a semicoonductor pellet, and a metal nitride film or a metal silicide film, each having conductivity and an anti-oxidation property, and being formed on one surface of the pellet to cause the surface to have a substantially uniform potential.

摘要翻译： 半导体器件包括具有导电性和抗氧化性的半导体颗粒和金属氮化物膜或金属硅化物膜，并且形成在颗粒的一个表面上以使表面具有基本均匀的电位。

公开(公告)号：US4807021A

公开(公告)日：1989-02-21

申请号：US22371

申请日：1987-03-05

申请人： Katsuya Okumura

发明人： Katsuya Okumura

IPC分类号： H01L23/485 ,  H01L25/065 ,  H01L23/16 ,  H01L23/48 ,  H01L29/46

CPC分类号： H01L25/0652 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/11 ,  H01L2224/11334 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16237 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/351

摘要： A semiconductor device includes a base semiconductor structure including semiconductor elements, interconnection layers for connecting the semiconductor elements together, and conductive pads to which the interconnection layers are connected, at least one stacking semiconductor structure including semiconductor elements, an interconnection layer for connecting the semiconductor elements together, and conductive pads to which the interconnection layers are connected, the stacking semiconductor structure having holes selectively formed therein to expose portions of the conductive pads, first conductive elements fixed in the holes of the stacking semiconductor structure, to be electrically connected to the exposed portions of the conductive pads, and second conductive elements fixed on the conductive pads of the base semiconductor structure, and fixed to the first conductive elements, with a gap provided between the base and stacking semiconductor structures.

摘要翻译： 半导体器件包括：包括半导体元件的基底半导体结构，用于将半导体元件连接在一起的互连层和连接有互连层的导电焊盘，至少一个包括半导体元件的堆叠半导体结构，用于连接半导体元件的互连层 以及与互连层连接的导电焊盘，所述堆叠半导体结构具有选择性地形成在其中的孔，以暴露所述导电焊盘的部分，固定在所述堆叠半导体结构的所述孔中的第一导电元件电连接到所述暴露的 导电焊盘的一部分和固定在基底半导体结构的导电焊盘上的第二导电元件，并且固定到第一导电元件，在基底和堆叠半导体结构之间设置间隙。

公开(公告)号：US4567364A

公开(公告)日：1986-01-28

申请号：US554717

申请日：1983-11-23

申请人： Masaaki Kano ,  Hiroshi Yamaji ,  Shinji Nakao ,  Katsuya Okumura

发明人： Masaaki Kano ,  Hiroshi Yamaji ,  Shinji Nakao ,  Katsuya Okumura

IPC分类号： G01B7/02 ,  G01B15/00 ,  H01J37/28 ,  G01N23/00

CPC分类号： H01J37/28 ,  G01B15/00 ,  G01B7/02

摘要： A dimension measuring apparatus for measuring the dimensions of a secondary electron emission object has a scanning electron microscope main body with a display, and a dimension measuring section connected to the main body. The dimension measuring section has a cursor setter for displaying cursors on the display. A memory stores image signals which are divided into picture elements and assigned to addresses. The image signals are used as image data. A CPU section receives the image data from the memory, obtains reference points for designating two ends of a line corresponding to a dimension of a sample to be measured based on the received image signals, and measures the dimension of the sample.

摘要翻译： 用于测量二次电子发射物体的尺寸的尺寸测量装置具有显示器的扫描电子显微镜主体和连接到主体的尺寸测量部分。 尺寸测量部分具有用于在显示器上显示光标的光标设置器。 存储器存储被划分为图像元素并被分配给地址的图像信号。 图像信号用作图像数据。 CPU部分从存储器接收图像数据，基于接收到的图像信号获得用于指定与要测量的样本的尺寸相对应的线的两端的参考点，并测量样本的尺寸。