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    Semiconductor device structure with a conductive feature passing through a passivation layer
    121.
    发明授权
    Semiconductor device structure with a conductive feature passing through a passivation layer 有权

    公开(公告)号：US10276619B2

    公开(公告)日：2019-04-30

    申请号：US15921032

    申请日：2018-03-14

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Hsun-Ying Huang

    IPC: H01L27/146 ,  H01L23/48

    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first semiconductor die, and a second semiconductor die bonded on the first semiconductor die. A through-substrate via penetrates through a semiconductor substrate of the second semiconductor die. A passivation layer is disposed between the first semiconductor die and the second semiconductor die, wherein the passivation layer is directly bonded to the semiconductor substrate of the second semiconductor die. A conductive feature passes through the passivation layer, wherein the conductive feature is bonded to the through-substrate via. A barrier layer is disposed between the conductive feature and the passivation layer. The barrier layer covers sidewalls of the conductive feature and separates the surface of the conductive feature from a nearest neighboring surface of the first or second semiconductor die.

    Image sensor device
    123.
    发明授权
    Image sensor device 有权

    公开(公告)号：US10163951B2

    公开(公告)日：2018-12-25

    申请号：US15170200

    申请日：2016-06-01

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Szu-Ying Chen ,  Min-Feng Kao ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Dun-Nian Yaung

    IPC: H01L27/146

    Abstract: In some embodiments, the present disclosure relates to an image sensor device. The image sensor device has an isolation well region surrounding a photodetector arranged within a substrate at a first depth. A gate stack is arranged over the isolation well region along a first surface of the substrate. The gate stack defines an edge. A doped isolation feature is arranged within the substrate at a second depth between the isolation well region and the gate stack. The gate stack is vertically over an active area. The doped isolation feature extends from the edge of the gate stack to under the gate stack.

    IMAGE SENSOR DEVICE
    130.
    发明申请
    IMAGE SENSOR DEVICE 审中-公开
    图像传感器设备

    公开(公告)号：US20160276382A1

    公开(公告)日：2016-09-22

    申请号：US15170200

    申请日：2016-06-01

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Szu-Ying Chen ,  Min-Feng Kao ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Dun-Nian Yaung

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14689

    Abstract: In some embodiments, the present disclosure relates to an image sensor device. The image sensor device has an isolation well region surrounding a photodetector arranged within a substrate at a first depth. A gate stack is arranged over the isolation well region along a first surface of the substrate. The gate stack defines an edge. A doped isolation feature is arranged within the substrate at a second depth between the isolation well region and the gate stack. The gate stack is vertically over an active area. The doped isolation feature extends from the edge of the gate stack to under the gate stack.

    Abstract translation: 在一些实施例中，本公开涉及一种图像传感器装置。 图像传感器装置具有围绕设置在第一深度的衬底内的光电检测器的隔离阱区域。 栅极堆叠沿着衬底的第一表面布置在隔离阱区域的上方。 门堆栈定义一个边。 在隔离阱区域和栅极堆叠之间的第二深度处，在衬底内布置掺杂隔离特征。 栅极堆栈垂直于有效区域。 掺杂隔离特征从栅极堆叠的边缘延伸到栅极堆叠下方。

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