公开(公告)号：US09671288B2

公开(公告)日：2017-06-06

申请号：US14936716

申请日：2015-11-10

Applicant: Microsemi Corporation

Inventor： Michael J. McNutt

IPC: H01L27/144 ,  G01J3/50 ,  G01N21/55 ,  H01L31/02 ,  H01L31/103 ,  H01L27/146

CPC classification number: G01J3/50 ,  G01N21/55 ,  H01L27/144 ,  H01L27/1443 ,  H01L27/14647 ,  H01L31/02019 ,  H01L31/103

Abstract: A solid-state photodetector with variable spectral response that can produce a narrow or wide response spectrum of incident light. Some embodiments include a solid-state device structure that includes a first photodiode and a second photodiode that share a common anode region. Bias voltages applied to the first photodiode and/or the second photodiode may be used to control the thicknesses of depletion regions of the photodiodes and/or a common anode region to vary the spectral response of the photodetector. Thickness of the depletion regions and/or the common anode region may be controlled based on resistance between multiple contacts of the common anode region and/or capacitance of the depletion regions. Embodiments include control circuits and methods for determining spectral characteristics of incident light using the variable spectral response photodetector.

公开(公告)号：US20170117431A1

公开(公告)日：2017-04-27

申请号：US15390647

申请日：2016-12-26

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Joel P. de Souza ,  Bahman Hekmatshoartabari ,  Daniel M. Kuchta ,  Devendra K. Sadana

IPC: H01L31/112 ,  H01L27/144 ,  H01L23/00

CPC classification number: H01L23/573 ,  H01L21/762 ,  H01L23/576 ,  H01L27/144 ,  H01L29/4916 ,  H01L31/02019 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/024 ,  H01L31/03762 ,  H01L31/1129 ,  H01L31/143 ,  H01L31/202

Abstract: Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device containing the chip be subjected to tampering. Triggering circuits containing normally-OFF heterojunction field-effect photo-transistors are configured to cause reactions of the reactive materials within the chips upon exposure to light. The normally-OFF heterojunction field-effect photo-transistors can be fabricated during back-end-of-line processing through the use of polysilicon channel material, amorphous hydrogenated silicon gate contacts, hydrogenated crystalline silicon source/drain contacts, or other materials that allow processing at low temperatures.

公开(公告)号：US20170117236A1

公开(公告)日：2017-04-27

申请号：US15390626

申请日：2016-12-26

Applicant: International Business Machines Corporation

Inventor： Ali Afzali-Ardakani ,  Joel P. de Souza ,  Bahman Hekmatshoartabari ,  Daniel M. Kuchta ,  Devendra K. Sadana

IPC: H01L23/00 ,  H01L31/02 ,  H01L31/112 ,  H01L31/20 ,  H01L31/14 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/0216 ,  H01L31/0203 ,  H01L31/024

CPC classification number: H01L23/573 ,  H01L21/762 ,  H01L23/576 ,  H01L27/144 ,  H01L29/4916 ,  H01L31/02019 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/024 ,  H01L31/03762 ,  H01L31/1129 ,  H01L31/143 ,  H01L31/202

Abstract: Silicon-based or other electronic circuitry is dissolved or otherwise disabled by reactive materials within a semiconductor chip should the chip or a device containing the chip be subjected to tampering. Triggering circuits containing normally-OFF heterojunction field-effect photo-transistors are configured to cause reactions of the reactive materials within the chips upon exposure to light. The normally-OFF heterojunction field-effect photo-transistors can be fabricated during back-end-of-line processing through the use of polysilicon channel material, amorphous hydrogenated silicon gate contacts, hydrogenated crystalline silicon source/drain contacts, or other materials that allow processing at low temperatures.

公开(公告)号：US09601476B2

公开(公告)日：2017-03-21

申请号：US15135945

申请日：2016-04-22

Applicant: International Business Machines Corporation

Inventor： Effendi Leobandung ,  Ning Li ,  Devendra K. Sadana

IPC: G02B6/10 ,  H01L25/00 ,  H01L31/18 ,  H01L31/0304 ,  H01L21/84 ,  G02B6/12 ,  H01S5/026 ,  H01L25/16 ,  H01L27/144 ,  H01S5/32 ,  H01S5/323 ,  H01S5/02

CPC classification number: H01L27/144 ,  G02B6/00 ,  G02B6/12004 ,  G02B2006/12078 ,  G02B2006/12121 ,  G02B2006/12123 ,  H01L21/84 ,  H01L25/167 ,  H01L25/50 ,  H01L27/092 ,  H01L31/0304 ,  H01L31/184 ,  H01L31/1852 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/3211 ,  H01S5/32316

Abstract: A method of forming an optoelectronic device and a silicon device on a single chip. The method may include; forming a stack of layers on a substrate in a first and second region, the stack of layers include a semiconductor layer, a first insulator layer, a waveguide, a second insulator layer, and a device base layer; forming the device on the device base layer in the second region; forming a device insulator layer on the device and on the device base layer in the second region; and forming the optoelectronic device in the first region, the optoelectronic device has a bottom cladding layer, an active region, and a top cladding layer, wherein the bottom cladding layer is on the semiconductor layer, the active region is on the bottom cladding layer, and the top cladding layer is on the active region.

公开(公告)号：US09570648B2

公开(公告)日：2017-02-14

申请号：US13761708

申请日：2013-02-07

Applicant: Intersil Americas LLC

Inventor： Sri Ganesh A. Tharumalingam ,  Seck Jiong Wong

IPC: G06M7/00 ,  H01J5/02 ,  H01J40/14 ,  H01L31/16 ,  H01L31/0232 ,  H01L27/144 ,  H01L23/00 ,  H01L25/16 ,  H01L31/02 ,  H01L31/18 ,  G01S7/481 ,  H01L31/0203 ,  H01L31/173 ,  G01S17/02

CPC classification number: H01L31/16 ,  G01S7/4813 ,  G01S17/026 ,  H01L24/97 ,  H01L25/165 ,  H01L25/167 ,  H01L27/144 ,  H01L27/1446 ,  H01L31/02002 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/173 ,  H01L31/18 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Optoelectronic devices (e.g., optical proximity sensors), methods for fabricating optoelectronic devices, and systems including optoelectronic devices, are described herein. An optoelectronic device includes a light detector die that includes a light detector sensor area. A light source die is attached to a portion of the light detector die that does not include the light detector sensor area. An opaque barrier is formed between the light detector sensor area and the light source die, and a light transmissive material encapsulates the light detector sensor area and the light source die. Rather than requiring a separate base substrate (e.g., a PCB substrate) to which are connected a light source die and a light detector die, the light source die is connected to the light detector die, such that the light detector die acts as the base for the finished optoelectronic device. This provides for cost reductions and reduces the total package footprint.

Abstract translation: 本文描述了光电子器件（例如，光学接近传感器），用于制造光电子器件的方法，以及包括光电器件的系统。 光电子器件包括光检测器管芯，其包括光检测器传感器区域。 光源管芯附接到不包括光检测器传感器区域的光检测器管芯的一部分。 在光检测器传感器区域和光源管芯之间形成不透明屏障，并且透光材料封装光检测器传感器区域和光源管芯。 光源管芯不需要连接光源管芯和光检测器管芯的单独的基底（例如，PCB衬底），光源管芯连接到光检测器管芯，使得光检测器管芯用作基座 用于成品光电器件。 这样做可以降低成本并减少总封装尺寸。

公开(公告)号：US09559224B2

公开(公告)日：2017-01-31

申请号：US14413890

申请日：2013-07-09

Applicant: Heptagon Micro Optics Pte. Ltd.

Inventor： Hartmut Rudmann ,  Markus Rossi

IPC: H01J3/14 ,  H01L31/0232 ,  G01S17/88 ,  G01S7/481 ,  H01L31/0203 ,  H01L27/146 ,  G01L9/00 ,  H01L27/144

CPC classification number: G01D5/30 ,  G01L9/0077 ,  G01S7/4813 ,  G01S17/88 ,  H01L27/144 ,  H01L27/14618 ,  H01L27/14625 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/02325 ,  H01L31/173 ,  H01L31/1876 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The opto-electronic module (1) comprises —a first substrate member (P); —a third substrate member (B); —a second substrate member (O) arranged between said first and third substrate members and comprising one or more transparent portions (ta, tb) through which light can pass, said at least one transparent portion comprising at least a first optical structure (5a;5a′;5b;5b′); —a first spacer member (S1) comprised in said first substrate member (P) or comprised in said second substrate member (O) or distinct from and located between these, which comprises at least one opening (4a;4b); —a second spacer member (S2) comprised in said second substrate member (O) or comprised in said third substrate member (B) or distinct from and located between these, which comprises at least one opening (3); —a light detecting element (D) arranged on and electrically connected to said first substrate member (P); —a light emission element (E) arranged on and electrically connected to said first substrate member (P); —and a sensing element (8) comprised in or arranged at said third substrate member (B). Such modules (1) are particularly suitable as sensor modules for sensing a magnitude such as a pressure.

Abstract translation: 光电模块（1）包括：第一衬底构件（P）; - 第三衬底构件（B）; - 第二衬底构件（O），布置在所述第一和第三衬底构件之间并且包括光可以通过的一个或多个透明部分（ta，tb），所述至少一个透明部分至少包括第一光学结构（5a; 5a'; 5b; 5b'）; - 包括在所述第一衬底构件（P）中或包含在所述第二衬底构件（O）中的第一间隔构件（S1）或与所述第一衬底构件（P）中的至少一个开口（4a; 4b）不同并位于所述第一衬底构件 - 包括在所述第二衬底构件（O）中或包括在所述第三衬底构件（B）中的第二间隔构件（S2）或者不同于所述第二衬底构件（B）中的第二衬垫构件（S2），其包括至少一个开口（3）; - 设置在所述第一基板部件（P）上并与其电连接的光检测元件（D）。 - 发光元件（E），布置在所述第一基板部件（P）上并与所述第一基板部件（P）电连接。 以及包含在所述第三衬底构件（B）中或布置在所述第三衬底构件（B）上的感测元件（8）。 这样的模块（1）特别适用于用于感测诸如压力的量值的传感器模块。

公开(公告)号：US20160141439A1

公开(公告)日：2016-05-19

申请号：US15002706

申请日：2016-01-21

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Terumasa Nagano ,  Noburo Hosokawa ,  Tomofumi Suzuki ,  Takashi Baba

IPC: H01L31/107 ,  H01L27/146 ,  H01L49/02 ,  H01L27/144 ,  H01L31/02

CPC classification number: H01L31/107 ,  G01J1/42 ,  G01T1/208 ,  H01L27/144 ,  H01L27/1443 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14663 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/022408

Abstract: A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side. The through-hole electrodes and the electrodes are electrically connected through bump electrodes, and a side surface of the semiconductor substrate and a side surface of a glass substrate are flush with each other.

Abstract translation: 半导体光检测元件包括以Geiger模式操作并形成在半导体衬底中的多个雪崩光电二极管，与各个雪崩光电二极管串联连接并设置在半导体衬底的第一主表面侧上的骤冷电阻器，以及多个通孔 电极连接到淬火电阻器并形成为从第一主表面侧穿过半导体衬底到第二主表面侧的电极。 安装基板包括在第三主表面侧对应于相应的通孔电极布置的多个电极。 通孔电极和电极通过凸块电极电连接，半导体衬底的侧表面和玻璃衬底的侧表面彼此齐平。

公开(公告)号：US09318449B2

公开(公告)日：2016-04-19

申请号：US14382211

申请日：2013-01-18

Applicant: Juergen Hasch ,  Uwe Wostradowski ,  Stefan Gaier ,  Elena Pancera ,  Carsten Potratz

Inventor： Juergen Hasch ,  Uwe Wostradowski ,  Stefan Gaier ,  Elena Pancera ,  Carsten Potratz

IPC: H01L21/00 ,  H01L23/00 ,  H01L27/00 ,  H01L23/66 ,  H01P3/12 ,  H01P5/107 ,  H01L21/48 ,  H01L23/528 ,  H01L27/144 ,  H01L25/16 ,  H01L23/29 ,  H01L21/56

CPC classification number: H01L23/66 ,  H01L21/4803 ,  H01L21/4846 ,  H01L21/565 ,  H01L23/293 ,  H01L23/528 ,  H01L25/16 ,  H01L27/144 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2223/6683 ,  H01L2924/0002 ,  H01P3/121 ,  H01P5/107 ,  H01L2924/00

Abstract: A semiconductor module, having an integrated circuit, a rewiring layer for externally connecting the integrated circuit, and at least one waveguide integrated into the semiconductor module for radar signals having a conductive pattern, which laterally surrounds the interior of the waveguides, the integrated circuit and the at least one waveguide being embedded, at least in regions, in a housing material of the semiconductor module; as well as a radar sensor, a motor vehicle radar system having such a semiconductor module, and a method for producing a semiconductor module.

Abstract translation: 具有集成电路的半导体模块，用于外部连接集成电路的重新布线层和集成到半导体模块中的至少一个波导，用于具有导电图案的雷达信号，横向地围绕波导的内部，集成电路和 所述至少一个波导至少在半导体模块的外壳材料的区域中嵌入; 以及具有这种半导体模块的雷达传感器，机动车辆雷达系统以及半导体模块的制造方法。

公开(公告)号：US09219088B2

公开(公告)日：2015-12-22

申请号：US13995926

申请日：2012-11-06

Applicant: BOE Technology Group Co., Ltd. ,  Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Inventor： Song Wu

IPC: H01L27/12 ,  H01L27/144 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: H01L27/1288 ,  G02F1/13458 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/144

Abstract: Embodiments of the present invention provide an array substrate, a manufacturing method thereof, and a display device. The array substrate comprises: a pixel region, a data-line pad region and a gate-line pad region; the pixel region comprises: a pixel electrode, a gate electrode of a TFT, source and drain electrodes of the TFT, a connection electrode, and a common electrode; the data-line pad region comprises: an insulating layer, a semiconductor layer, a data line, and a data-line connection pad; the data line and the source and drain electrodes are of a same layer and a same material; and the gate-line pad region comprises: a gate line, an insulating layer, and a gate-line connection pad; the gate line and the gate electrode are of a same layer and a same material; and the gate-line connection pad and the source and drain electrodes are of a same layer and a same material. The array substrate can reduce the number of masks and exposure times, thereby reducing manufacturing costs and improving production efficiency.

Abstract translation: 本发明的实施例提供阵列基板，其制造方法和显示装置。 阵列基板包括：像素区域，数据线焊盘区域和栅极线焊盘区域; 像素区域包括：像素电极，TFT的栅电极，TFT的源极和漏极，连接电极和公共电极; 数据线焊盘区域包括：绝缘层，半导体层，数据线和数据线连接焊盘; 数据线和源电极和漏电极具有相同的层和相同的材料; 并且所述栅极线焊盘区域包括：栅极线，绝缘层和栅极线连接焊盘; 栅极线和栅电极具有相同的层和相同的材料; 并且栅极线连接焊盘和源电极和漏电极具有相同的层和相同的材料。 阵列基板可以减少掩模的数量和曝光时间，从而降低制造成本并提高生产效率。

公开(公告)号：US09212992B2

公开(公告)日：2015-12-15

申请号：US13943305

申请日：2013-07-16

Applicant: Microsemi Corporation

Inventor： Michael J. McNutt

IPC: H01L31/00 ,  G01N21/55 ,  H01L31/02 ,  H01L31/103 ,  H01L27/144 ,  H01L27/146

CPC classification number: G01J3/50 ,  G01N21/55 ,  H01L27/144 ,  H01L27/1443 ,  H01L27/14647 ,  H01L31/02019 ,  H01L31/103

Abstract: A solid-state photodetector with variable spectral response that can produce a narrow or wide response spectrum of incident light. Some embodiments include a solid-state device structure that includes a first photodiode and a second photodiode that share a common anode region. Bias voltages applied to the first photodiode and/or the second photodiode may be used to control the thicknesses of depletion regions of the photodiodes and/or a common anode region to vary the spectral response of the photodetector. Thickness of the depletion regions and/or the common anode region may be controlled based on resistance between multiple contacts of the common anode region and/or capacitance of the depletion regions. Embodiments include control circuits and methods for determining spectral characteristics of incident light using the variable spectral response photodetector.

Abstract translation: 具有可变光谱响应的固态光电探测器，可产生入射光的窄或宽响应谱。 一些实施例包括固态器件结构，其包括共享公共阳极区域的第一光电二极管和第二光电二极管。 施加到第一光电二极管和/或第二光电二极管的偏压可用于控制光电二极管和/或公共阳极区域的耗尽区的厚度，以改变光电检测器的光谱响应。 可以基于公共阳极区域的多个触点和/或耗尽区域的电容之间的电阻来控制耗尽区域和/或公共阳极区域的厚度。 实施例包括使用可变光谱响应光电检测器来确定入射光的光谱特性的控制电路和方法。