公开(公告)号：US08432947B2

公开(公告)日：2013-04-30

申请号：US12719468

申请日：2010-03-08

Applicant: Maki Sugai ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Shinya Nunoue

Inventor： Maki Sugai ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Shinya Nunoue

IPC: H01S5/00

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/1014 ,  H01S5/1039 ,  H01S5/16 ,  H01S5/164 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/3063 ,  H01S2301/18

Abstract: A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion

Abstract translation: 一种半导体发光器件包括：分别包括第一和第二导电类型的第一和第二半导体层的层叠体，以及设置在其间的发光层; 分别与第一和第二半导体层接触的第一和第二电极。 发射的光在第一方向上相对的层叠体的第一和第二端面之间共振。 第二半导体层包括脊部和宽部。 沿着与第一方向垂直的第二方向和堆叠方向的脊部的宽度在第二电极侧比在发光层侧窄。 沿着第二方向的宽部的宽度比脊部宽。 沿着第二方向的第二电极的窄部的宽度比脊部的宽度窄

公开(公告)号：US08414145B2

公开(公告)日：2013-04-09

申请号：US13033960

申请日：2011-02-24

Applicant: Iwao Mitsuishi ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Shinya Nunoue

Inventor： Iwao Mitsuishi ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Shinya Nunoue

IPC: F21V9/00

CPC classification number: C09K11/0883 ,  C09K11/7734 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2224/45144 ,  H01L2224/48091 ,  H05B33/14 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A light emitting device according to one embodiment includes: a board; plural first light emitting units each including a first light emitting element and a first fluorescent layer formed on the first light emitting element having a green phosphor; plural second light emitting units each including a second light emitting element and a second fluorescent layer formed on the second light emitting element having a red phosphor; the second fluorescent layers and the first fluorescent layers being separated in a non-contact manner with gas interposed there between; and plural third light emitting units each including a third light emitting element and a resin layer formed on the third light emitting element having neither a green phosphor nor the red phosphor, the third light emitting units being disposed between the first light emitting units and the second light emitting units.

公开(公告)号：US08395263B2

公开(公告)日：2013-03-12

申请号：US13029462

申请日：2011-02-17

Applicant: Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue

Inventor： Taisuke Sato ,  Toshiyuki Oka ,  Koichi Tachibana ,  Shinya Nunoue

IPC: H01L23/48

CPC classification number: H01L33/60 ,  H01L33/30 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/29083 ,  H01L2224/29099 ,  H01L2933/0016

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first, a second and a third conductive layer. The stacked structural body includes first and second semiconductors and a light emitting layer provided therebetween. The second semiconductor layer is disposed between the first conductive layer and the light emitting layer. The first conductive layer is transparent. The first conductive layer has a first major surface on a side opposite to the second semiconductor layer. The second conductive layer is in contact with the first major surface. The third conductive layer is in contact with the first major surface and has a reflectance higher than a reflectance of the second conductive layer. The third conductive layer includes an extending part extending in parallel to the first major surface. At least a portion of the extending part is not covered by the second conductive layer.

Abstract translation: 根据一个实施例，半导体发光器件包括层叠结构体，第一，第二和第三导电层。 堆叠结构体包括第一和第二半导体以及设置在它们之间的发光层。 第二半导体层设置在第一导电层和发光层之间。 第一导电层是透明的。 第一导电层在与第二半导体层相对的一侧具有第一主表面。 第二导电层与第一主表面接触。 第三导电层与第一主表面接触并且具有高于第二导电层的反射率的反射率。 第三导电层包括平行于第一主表面延伸的延伸部分。 延伸部分的至少一部分不被第二导电层覆盖。

公开(公告)号：US20130059408A1

公开(公告)日：2013-03-07

申请号：US13665650

申请日：2012-10-31

Applicant: Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

Inventor： Kotaro Zaima ,  Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue

IPC: H01L33/04

CPC classification number: H01L33/06 ,  H01L21/18 ,  H01L33/04 ,  H01L33/22 ,  H01L33/24

Abstract: Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed.

Abstract translation: 某些实施例提供了一种用于制造半导体发光器件的方法，包括：在第一衬底上提供第一堆叠膜，所述第一叠层膜通过堆叠p型氮化物半导体层，具有多量子阱结构的活性层 氮化物半导体和n型氮化物半导体层; 在n型氮化物半导体层的上表面上形成n电极; 并且通过使用碱性溶液在n型氮化物半导体层的上表面上进行湿式蚀刻，在n型氮化物半导体层的上表面上形成凹凸区域，除了其中 形成n电极。

公开(公告)号：US08390007B2

公开(公告)日：2013-03-05

申请号：US12874399

申请日：2010-09-02

Applicant: Toru Gotoda ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima

Inventor： Toru Gotoda ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima

IPC: H01L33/00

CPC classification number: H01L33/382 ,  H01L33/0079 ,  H01L33/20 ,  H01L2933/0091

Abstract: A semiconductor light emitting device has a light emitting element, and first and second electrodes. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The first and second electrodes are disposed on both sides of the light emitting element, respectively. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer is disposed between the light emitting layer and the first electrode. The second conductive type semiconductor layer is disposed between the light emitting layer and the second electrode. One surface of the first conductive type semiconductor layer contacts the first electrode and is a light extraction surface which is roughly processed so as to have two or more kinds of oblique angles.

Abstract translation: 半导体发光器件具有发光元件，以及第一和第二电极。 发光元件在基板上具有基于氮化物的III-V族化合物半导体。 第一和第二电极分别设置在发光元件的两侧。 发光元件具有发光层，第一导电型半导体层和第二导电型半导体层。 第一导电型半导体层设置在发光层和第一电极之间。 第二导电型半导体层设置在发光层和第二电极之间。 第一导电类型半导体层的一个表面接触第一电极，并且是大致加工以具有两种或更多种倾斜角的光提取表面。

公开(公告)号：US08384109B2

公开(公告)日：2013-02-26

申请号：US13238818

申请日：2011-09-21

Applicant: Eiji Muramoto ,  Shinya Nunoue

Inventor： Eiji Muramoto ,  Shinya Nunoue

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

Abstract: A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

Abstract translation: 一种半导体发光装置，包括：基板，形成在基板上的n型半导体层，层叠在n型半导体层上的能够发光的有源层，层叠在有源层上的p型半导体层 设置在半导体衬底的下表面上或n型半导体层上并与有源层和p型半导体层间隔开的n电极和设置在p型半导体层上的p电极， 并且包括形成在点状金属层上的反射欧姆金属层，其中从有源层发射的光从基板侧向外部提取。

公开(公告)号：US08369375B2

公开(公告)日：2013-02-05

申请号：US12729636

申请日：2010-03-23

Applicant: Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Maki Sugai ,  Shinya Nunoue

Inventor： Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Maki Sugai ,  Shinya Nunoue

IPC: H01S3/04 ,  H01S5/00 ,  H01S3/091

CPC classification number: H01S5/02296 ,  H01S5/005 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/02216 ,  H01S5/0228 ,  H01S5/32341 ,  H01S5/327

Abstract: Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package.

Abstract translation: 公开了一种半导体发光装置，其包括具有出光口的封装，设置在封装中的半导体激光二极管，并将具有落入紫外线范围内的第一波长的光照射到可见光，以及可见光发射极 所述荧光物质吸收从所述半导体激光二极管照射的光并发射具有与所述第一波长不同的第二波长的可见光，所述可见光发射极配置在所述激光二极管的光路上， 可见光发射器与封装件接触。

公开(公告)号：US08334153B2

公开(公告)日：2012-12-18

申请号：US12874625

申请日：2010-09-02

Applicant: Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima

Inventor： Toru Gotoda ,  Toshiyuki Oka ,  Shinya Nunoue ,  Kotaro Zaima

IPC: H01L21/00

CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light emitting device has a light emitting element, a first electrode layer, a second electrode layer, a seed electrode layer and a plated layer. The light emitting element has a nitride-based III-V compound semiconductor on a substrate. The light emitting element having a light extraction surface. The first electrode layer on the light extraction surface. The second electrode layer is provided on a surface opposite to the light extraction surface of the light emitting element. The seed electrode layer is configured to cover the entire surface of the second electrode layer. The plated layer is provided on the seed electrode layer. The light emitting element has a light emitting layer, a first conductive type semiconductor layer, and a second conductive type semiconductor layer. The light emitting element has a forward tapered shape of a width which gradually narrows in order of the second conductive type semiconductor layer, the light emitting layer and the first conductive type semiconductor layer.

Abstract translation: 半导体发光器件具有发光元件，第一电极层，第二电极层，种子电极层和镀层。 发光元件在基板上具有基于氮化物的III-V族化合物半导体。 发光元件具有光提取面。 光提取面上的第一电极层。 第二电极层设置在与发光元件的光提取面相反的表面上。 种子电极层构造成覆盖第二电极层的整个表面。 电镀层设置在种子电极层上。 发光元件具有发光层，第一导电型半导体层和第二导电型半导体层。 发光元件具有按照第二导电类型半导体层，发光层和第一导电类型半导体层的顺序逐渐变窄的宽度的正锥形形状。

公开(公告)号：US20120298952A1

公开(公告)日：2012-11-29

申请号：US13406770

申请日：2012-02-28

Applicant: Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Maki SUGAI ,  Shinya NUNOUE

Inventor： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Maki SUGAI ,  Shinya NUNOUE

IPC: H01L33/06 ,  H01L21/20 ,  H01L29/38

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/48

Abstract: According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.

Abstract translation: 根据实施例，半导体发光器件包括基底层，第一半导体层，发光层和第二半导体层。 基底层具有凹部，侧部和突起部的凹凸。 基础层的第一主表面具有覆盖区域。 基底层具有多个位错，其包括一端到达凹部的第一位错和一端到达突起的第二位错。 到达第一主表面的第二位错的数量与所有第二位错的数量的比例小于到达第一主表面的第一位错的数量与所有第一位错的数量的比例。 到达第一主表面的覆盖区域的多个位错小于所有第一位错的数量。

公开(公告)号：US20120295377A1

公开(公告)日：2012-11-22

申请号：US13222238

申请日：2011-08-31

Applicant: Taisuke SATO ,  Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

Inventor： Taisuke SATO ,  Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

IPC: H01L33/60

CPC classification number: H01L33/0079 ,  H01L33/22

Abstract: According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.

Abstract translation: 根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。 该方法可以包括通过使用第一处理材料从结构体移除生长衬底。 结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。 支撑基板结合到氮化物半导体层。 该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。