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    STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN STT-MRAM DEVICES
    133.
    发明申请
    STRUCTURE AND METHOD TO REDUCE SHORTING AND PROCESS DEGRADATION IN STT-MRAM DEVICES 有权

    公开(公告)号：US20170229641A1

    公开(公告)日：2017-08-10

    申请号：US15499058

    申请日：2017-04-27

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Anthony J. Annunziata ,  Gen P. Lauer ,  Janusz J. Nowak ,  Eugene J. O'Sullivan

    IPC分类号： H01L43/08 ,  H01L43/12

    CPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/12

    摘要： A method of making a magnetic random access memory device includes forming a magnetic tunnel junction (MTJ) on an electrode, the MTJ including a reference layer, a tunnel barrier layer, and a free layer; disposing a hard mask on the MTJ; etching sidewalls of the hard mask and MTJ to form a stack with a first width and redeposit metal along the MTJ sidewall; depositing a sacrificial dielectric layer on the hard mask, surface of the electrode, exposed sidewall of the hard mask and the MTJ, and on redeposited metal along the sidewall of the MTJ; removing a portion of the sacrificial dielectric layer from sidewalls of the hard mask and MTJ and redeposited metal from the MTJ sidewalls; and removing a portion of a sidewall of the MTJ and hard mask to provide a second width to the stack; wherein the second width is less than the first width.

    LAMINATED MAGNETIC MATERIALS FOR ON-CHIP MAGNETIC INDUCTORS/TRANSFORMERS
    137.
    发明申请
    LAMINATED MAGNETIC MATERIALS FOR ON-CHIP MAGNETIC INDUCTORS/TRANSFORMERS 审中-公开
    片上磁性电感器/变压器的层压磁性材料

    公开(公告)号：US20170076852A1

    公开(公告)日：2017-03-16

    申请号：US14854523

    申请日：2015-09-15

    申请人： International Business Machines Corporation

    发明人： Hariklia Deligianni ,  William J. Gallagher ,  Sathana Kitayaporn ,  Eugene J. O'Sullivan ,  Lubomyr T. Romankiw ,  Naigang Wang ,  Joonah Yoon

    IPC分类号： H01F27/28 ,  H01F41/04 ,  H01F27/24

    摘要： A technique relates to a method of forming a laminated multilayer magnetic structure. An adhesion layer is deposited on a substrate. A magnetic seed layer is deposited on top of the adhesion layer. Magnetic layers and non-magnetic spacer layers are alternatingly deposited such that an even number of the magnetic layers is deposited while an odd number of the non-magnetic spacer layers is deposited. The odd number is one less than the even number. Every two of the magnetic layers is separated by one of the non-magnetic spacer layers. The first of the magnetic layers is deposited on the magnetic seed layer, and the magnetic layers each have a thickness less than 500 nanometers.

    摘要翻译： 一种技术涉及形成叠层多层磁性结构的方法。 粘合层沉积在基底上。 磁性种子层沉积在粘附层的顶部。 交替沉积磁性层和非磁性间隔层，使得沉积偶数个磁性层，同时沉积奇数个非磁性间隔层。 奇数比偶数少一个。 每两个磁性层由非磁性间隔层之一分开。 磁性层中的第一层沉积在磁性种子层上，磁性层各自具有小于500纳米的厚度。