公开(公告)号：US06906400B2

公开(公告)日：2005-06-14

申请号：US10756840

申请日：2004-01-13

申请人： Romain Delhougne ,  Roger Loo ,  Philippe Meunier-Beillard ,  Mathieu Caymax

发明人： Romain Delhougne ,  Roger Loo ,  Philippe Meunier-Beillard ,  Mathieu Caymax

IPC分类号： H01L21/20 ,  H01L29/10 ,  H01L31/117 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/107 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02667 ,  H01L29/1054

摘要： A semiconductor device is provided comprising a semiconductor substrate having on its top a Thin Strain Relaxed Buffer. The Thin Strain Relaxed Buffer consists of a stack of three layers of essentially constant Ge concentration. The three layers include a first epitaxial layer of Si1-xGex, a second epitaxial layer of Si1-xGex:C, and a third epitaxial layer of Si1-xGex on the second epitaxial layer. A method to fabricate such a buffer is also provided.

摘要翻译： 提供了半导体器件，其包括在其顶部上具有薄应变弛缓缓冲器的半导体衬底。 薄应变松弛缓冲液由三层基本上恒定的Ge浓度组成。 这三层包括第一外延层Si 1-x N x Si x Si，第一外延层Si 1-x Ge x Si， C，以及第二外延层上的Si 1-x Ge x S x的第三外延层。 还提供了制造这种缓冲器的方法。

公开(公告)号：US20050093100A1

公开(公告)日：2005-05-05

申请号：US10700085

申请日：2003-11-03

申请人： Tze-chiang Chen ,  Guy Cohen ,  Alexander Reznicek ,  Devendra Sadana ,  Ghavam Shahidi

发明人： Tze-chiang Chen ,  Guy Cohen ,  Alexander Reznicek ,  Devendra Sadana ,  Ghavam Shahidi

IPC分类号： H01L21/762 ,  H01L27/12 ,  H01L27/144 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/18 ,  H01L31/117

CPC分类号： H01L21/76254 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/1812 ,  Y02E10/547

摘要： A method for fabricating germanium-on-insulator (GOI) substrate materials, the GOI substrate materials produced by the method and various structures that can include at least the GOI substrate materials of the present invention are provided. The GOI substrate material include at least a substrate, a buried insulator layer located atop the substrate, and a Ge-containing layer, preferably pure Ge, located atop the buried insulator layer. In the GOI substrate materials of the present invention, the Ge-containing layer may also be referred to as the GOI film. The GOI film is the layer of the inventive substrate material in which devices can be formed.

摘要翻译： 提供了绝缘体上（锗）绝缘体（GOI）衬底材料的方法，通过该方法生产的GOI衬底材料和至少可以包括本发明的GOI衬底材料的各种结构。 GOI衬底材料至少包括衬底，位于衬底顶部的掩埋绝缘体层，以及位于掩埋绝缘体层顶部的优选纯Ge的Ge含有层。 在本发明的GOI基板材料中，Ge含有层也可以称为GOI膜。 GOI膜是可以形成器件的本发明的基底材料的层。

公开(公告)号：US20050054145A1

公开(公告)日：2005-03-10

申请号：US10605108

申请日：2003-09-09

申请人： Dureseti Chidambarrao ,  Omer Dokumaci

发明人： Dureseti Chidambarrao ,  Omer Dokumaci

IPC分类号： H01L21/265 ,  H01L21/332 ,  H01L21/336 ,  H01L21/461 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/78 ,  H01L31/117

CPC分类号： H01L21/823814 ,  H01L21/26506 ,  H01L21/26513 ,  H01L29/1054 ,  H01L29/6656

摘要： The first source and drain regions are formed in an upper surface of a SiGe substrate. The first source and drain regions containing an N type impurity. Vacancy concentration in the first source and drain regions are reduced in order to reduce diffusion of the N type impurity contained in the first source and drain regions. The vacancy concentration is reduced by an interstitial element or a vacancy-trapping element in the first source and drain regions. The interstitial element or the vacancy-trapping element is provided by ion-implantation.

摘要翻译： 第一源区和漏区形成在SiGe衬底的上表面中。 含有N型杂质的第一源区和漏区。 为了减少包含在第一源极和漏极区域中的N型杂质的扩散，第一源区和漏区中的空位浓度被降低。 空位浓度通过第一源极和漏极区域中的间隙元素或空穴捕获元件而减小。 间隙元素或空位捕获元件通过离子注入提供。

公开(公告)号：US6111305A

公开(公告)日：2000-08-29

申请号：US168653

申请日：1998-10-08

申请人： Takeshi Yoshida ,  Yusuke Otomo

发明人： Takeshi Yoshida ,  Yusuke Otomo

IPC分类号： H01L31/0352 ,  H01L31/105 ,  H01L31/075 ,  H01L31/117

CPC分类号： H01L31/105 ,  H01L31/03529 ,  Y02E10/50

摘要： A semiconductor photodetector includes a SOI substrate; a p-i-n photodiode provided on the SOI substrate, the p-i-n photodiode having an i-type semiconductor region; an insulator film provided on the i-type semiconductor region; and a depleting electrode provided on the insulator film. The semiconductor photodetector exhibits its function well with or without a power source for applying a voltage to the depleting electrode for depleting it. When the power source for depletion is used, the function of the device is realized at a voltage for depletion applied from the power source for depletion lower than a biasing voltage applied from a biasing power source.

摘要翻译： 半导体光电检测器包括SOI衬底; 设置在SOI衬底上的p-i-n光电二极管，具有i型半导体区域的p-i-n光电二极管; 设置在i型半导体区域上的绝缘膜; 以及设置在绝缘膜上的耗尽电极。 半导体光电检测器在有或没有用于向耗尽电极施加电压以消耗其的电源的情况下展现其功能。 当使用用于耗尽的电源时，器件的功能在用于耗尽的电源的耗尽电压低于从偏置电源施加的偏置电压下实现。

公开(公告)号：US6027956A

公开(公告)日：2000-02-22

申请号：US19079

申请日：1998-02-05

申请人： Pierre Irissou

发明人： Pierre Irissou

IPC分类号： H01L31/0352 ,  H01L31/105 ,  H01L21/304 ,  H01L31/075 ,  H01L31/117

CPC分类号： H01L31/105 ,  H01L31/0352 ,  H01L31/035281 ,  Y02E10/50

摘要： A method is shown for producing a PIN photodiode wherein an intrinsic layer of the photodiode can be made arbitrarily thin. A fabrication substrate is lightly doped to have a first conductivity type in order to form the intrinsic layer of the photodiode. A first active region of the photodiode having the first conductivity type is formed on a first surface of the fabrication substrate. An oxide layer is also formed upon the first surface of the fabrication substrate. A handling substrate is bonded to the first surface of the fabrication substrate. A second surface of the fabrication is then lapped to a obtain a preselected thickness of the intrinsic layer. And a second active region of the photodiode having a second conductivity type is formed on the second surface of the fabrication substrate.

摘要翻译： 示出了用于制造PIN光电二极管的方法，其中光电二极管的本征层可以任意变薄。 轻微掺杂制造衬底以具有第一导电类型以形成光电二极管的本征层。 具有第一导电类型的光电二极管的第一有源区形成在制造衬底的第一表面上。 氧化物层也形成在制造衬底的第一表面上。 处理基板结合到制造基板的第一表面。 然后将该制造的第二表面研磨以获得本征层的预选厚度。 并且在制造衬底的第二表面上形成具有第二导电类型的光电二极管的第二有源区。

公开(公告)号：US5828117A

公开(公告)日：1998-10-27

申请号：US859687

申请日：1997-05-21

申请人： Masataka Kondo ,  Katsuhiko Hayashi ,  Atsuo Ishikawa ,  Shinichiro Kurata ,  Hideo Yamagishi

发明人： Masataka Kondo ,  Katsuhiko Hayashi ,  Atsuo Ishikawa ,  Shinichiro Kurata ,  Hideo Yamagishi

IPC分类号： H01L31/0224 ,  H01L31/0392 ,  H01L31/052 ,  H01L31/075 ,  H01L31/18 ,  H01L31/105 ,  H01L31/117

CPC分类号： H01L31/1884 ,  H01L31/022466 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/056 ,  H01L31/075 ,  Y02E10/52 ,  Y02E10/548

摘要： The invention provides two kinds of structures for a thin-film solar cell that is improved in the adhesive strength and reflectance of a back surface electrode layer. According to the first structure, in a thin-film solar cell in which a transparent electrode layer, a thin-film semiconductor layer, and a back surface electrode layer are laid in stated order on an insulative transparent substrate, the back surface electrode layer consists of a first transparent conductive metal compound layer having a smaller refractive index than a semiconductor that constitutes the thin-film semiconductor layer, a second transparent conductive metal compound layer, and a metal layer. The second transparent conductive metal compound layer contains at least one of components of the first transparent conductive metal compound layer and a component of the metal layer. According to the second structure, in a thin-film solar cell in which a transparent electrode layer, a thin-film semiconductor layer, and a back surface electrode layer are laid in order on an insulative transparent substrate, the back surface electrode layer is a layered body consisting of a silver thin film, and an intermediate thin layer containing silver, oxygen, and a metal element constituting a transparent conductive metal oxide.

摘要翻译： 本发明提供两种用于提高背面电极层的粘合强度和反射率的薄膜太阳能电池的结构。 根据第一结构，在透明电极层，薄膜半导体层和背面电极层以绝缘性的透明基板依次配置的薄膜太阳能电池中，背面电极层由 具有比构成薄膜半导体层的半导体的折射率小的第一透明导电金属化合物层，第二透明导电金属化合物层和金属层。 第二透明导电金属化合物层包含第一透明导电金属化合物层和金属层的成分中的至少一种。 根据第二结构，在绝缘性透明基板上依次层叠透明电极层，薄膜半导体层和背面电极层的薄膜太阳能电池中，背面电极层为 由银薄膜构成的层状体，以及含有银，氧，构成透明导电性金属氧化物的金属元素的中间薄层。

公开(公告)号：US5821597A

公开(公告)日：1998-10-13

申请号：US554241

申请日：1995-11-08

申请人： Setsuo Nakajima ,  Yasuyuki Arai ,  Hisato Shinohara ,  Masayoshi Abe

发明人： Setsuo Nakajima ,  Yasuyuki Arai ,  Hisato Shinohara ,  Masayoshi Abe

IPC分类号： H01L27/142 ,  H01L31/0392 ,  H01L31/20 ,  H01L31/075 ,  H01L23/04 ,  H01L31/105 ,  H01L31/117

CPC分类号： H01L31/206 ,  H01L31/02008 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A photoelectric conversion device taking the form of a thin film and having a substrate exhibiting poor thermal resistance. The device prevents thermal deformation which would normally be caused by local application of excessive heat to the substrate. The device has output terminals permitting the output from the device to be taken out. The output terminals are formed on the surface of the substrate opposite to the photoelectric conversion device. The device further includes electrical connector portions for electrically connecting the electrodes of the device with the output terminals. The present invention also provides a method of treating a substrate having poor thermal resistance with a plasma with a high throughput. The substrate is continuously supplied into a reaction chamber and treated with a plasma. This supply operation is carried out in such a way that the total length of the substrate existing in a plasma processing region formed by electrodes is longer than the length of the electrodes.

公开(公告)号：US5821577A

公开(公告)日：1998-10-13

申请号：US985344

申请日：1992-11-30

申请人： Emmanuel Crabbe' ,  Bernard Steele Meyerson ,  Johannes Maria Cornelis Stork ,  Sophie Verdonckt-Vandebroek

发明人： Emmanuel Crabbe' ,  Bernard Steele Meyerson ,  Johannes Maria Cornelis Stork ,  Sophie Verdonckt-Vandebroek

IPC分类号： H01L29/78 ,  H01L21/335 ,  H01L29/10 ,  H01L29/161 ,  H01L29/165 ,  H01L29/778 ,  H01L29/76 ,  H01L31/0328 ,  H01L31/117

CPC分类号： H01L29/66431 ,  H01L29/1029 ,  H01L29/1054 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7782

摘要： A MISFET having a graded semiconductor alloy channel layer of silicon germanium in which the germanium is graded to a single peak percentage level. The single peak percentage level defines the location of the charge carriers within the layer. The transconductance of the device can be optimized by controlling the location of the carriers within the channel.

摘要翻译： 具有硅锗分级半导体合金沟道层的MISFET，其中锗分级至单峰值百分比水平。 单峰值百分比水平定义了电荷载流子在层内的位置。 可以通过控制通道内的载体的位置来优化装置的跨导。

公开(公告)号：US5796153A

公开(公告)日：1998-08-18

申请号：US527268

申请日：1995-09-12

申请人： Sorin Marcovici

发明人： Sorin Marcovici

IPC分类号： G01T1/24 ,  G01N23/20 ,  G01T1/02 ,  G01T1/20 ,  H01L27/14 ,  H01L27/144 ,  H01L31/0232 ,  H01L31/09 ,  H01L31/105 ,  H01L31/115 ,  H01L31/117

CPC分类号： H01L27/1446 ,  G01N23/20008 ,  H01L31/02322 ,  H01L31/1055 ,  H01L31/115

摘要： Variable-response photodetectors adapted to compensate for nonuniformity along an axis of a scintillating crystal by means of multi-element photodiodes and systems for selectively activating different photodiode sub-elements are disclosed, together with arrays of such photodetectors and X-ray detection systems utilizing such photodetectors.

摘要翻译： 公开了适用于通过多元素光电二极管沿着闪烁晶体的轴的不均匀性补偿的可变响应光电探测器以及用于选择性地激活不同的光电二极管子元件的系统，以及利用这种光电探测器和X射线检测系统的阵列 光电探测器

公开(公告)号：US5733815A

公开(公告)日：1998-03-31

申请号：US341545

申请日：1994-11-18

申请人： German Ashkinazi ,  Mark Leibovich ,  Boris Meyler ,  Menachem Nathan ,  Leonid Zolotarevski ,  Olga Zolotarevski

发明人： German Ashkinazi ,  Mark Leibovich ,  Boris Meyler ,  Menachem Nathan ,  Leonid Zolotarevski ,  Olga Zolotarevski

IPC分类号： H01L31/10 ,  H01L21/208 ,  H01L31/09 ,  H01L31/111 ,  H01L31/117 ,  H01L21/20

CPC分类号： H01L31/117 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02625 ,  H01L21/02628 ,  H01L31/1113

摘要： A method of simultaneously forming a gallium arsenide p-i-n structure having p, i, and n regions, which includes heating to dissolve gallium arsenide in a solvent such as bismuth or gallium to form a saturated solution of gallium arsenide in the solvent, contacting the solution with a gaseous mixture, which mixture includes hydrogen, water vapor and products of reactions between the hydrogen and the water vapor with the solvent and with silicon dioxide, to form a contacted solution, coating a suitably selected substrate, such as a group III-V compound such as gallium arsenide, with the contacted solution, cooling the coated substrate to precipitate gallium arsenide from the contacted solution onto the substrate, and removing the substrate coated with a layer of gallium arsenide having a p-i-n structure which constitutes the product having an i region dopant concentration of less than about 10.sup.12 cm.sup.-3.

摘要翻译： PCT No.PCT / US93 / 04782 Sec。 371日期：1994年11月18日 102（e）1994年11月18日日期PCT提交1993年5月20日PCT公布。 公开号WO93 / 24954 日期1993年12月9日一种同时形成具有p，i和n区域的砷化镓pin结构的方法，其包括加热以溶解诸如铋或镓的溶剂中的砷化镓，以在溶剂中形成砷化镓的饱和溶液 将溶液与气体混合物接触，该混合物包括氢气，水蒸气以及在与溶剂和二氧化硅之间的氢气和水蒸汽之间的反应产物，以形成接触的溶液，涂覆适当选择的基底，例如 III-V族化合物如砷化镓与所述接触溶液一起冷却所述涂覆的基底以将砷化镓从所述接触溶液沉淀到所述基底上，以及除去涂覆有构成所述产物的pin结构的砷化镓层的基底 具有小于约1012cm-3的i区掺杂浓度。