公开(公告)号：US20230265582A1

公开(公告)日：2023-08-24

申请号：US18110403

申请日：2023-02-16

Applicant: ASM IP Holding B.V.

Inventor： Gregory Deye ,  Yen Chun Fu ,  Arun Murali

IPC: C30B33/08 ,  C30B25/18 ,  C30B29/06

CPC classification number: C30B33/08 ,  C30B25/186 ,  C30B29/06

Abstract: A method of processing a surface of an epitaxially grown silicon film includes using a radical species to remove random surface terminations from the surface of the epitaxially grown silicon film and to generate a substantially uniform distribution of surface terminations. Reaction systems for performing such a method, and epitaxially grown films prepared using such a method, also are provided.

公开(公告)号：US20230265556A1

公开(公告)日：2023-08-24

申请号：US18142147

申请日：2023-05-02

Applicant: ASM IP Holding B.V. ,  Universiteit Gent

Inventor： Matthias Minjauw ,  Jolien Dendooven ,  Christophe Detavernier

IPC: C23C16/06 ,  C23C16/40 ,  C23C16/455 ,  H01L21/285

CPC classification number: C23C16/06 ,  C23C16/40 ,  C23C16/45527 ,  H01L21/28556

Abstract: A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of platinum, aluminum, titanium, bismuth, zinc, and combination thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide, wherein the ruthenium-containing film comprises at least one of a ruthenium-platinum alloy, or a ternary ruthenium oxide. Device structures including a ruthenium-containing film deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US11735414B2

公开(公告)日：2023-08-22

申请号：US17352330

申请日：2021-06-20

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3105 ,  C23C16/40 ,  H10B69/00 ,  C23C16/56

CPC classification number: H01L21/0234 ,  C23C16/402 ,  H01L21/0228 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/31111 ,  H10B69/00 ,  C23C16/401 ,  C23C16/56

Abstract: A method of post-deposition treatment for silicon oxide film includes: providing in a reaction space a substrate having a recess pattern on which a silicon oxide film is deposited; supplying a reforming gas for reforming the silicon oxide film to the reaction space in the absence of a film-forming precursor, said reforming gas being composed primarily of He and/or H2; and irradiating the reforming gas with microwaves in the reaction space having a pressure of 200 Pa or less to generate a direct microwave plasma to which the substrate is exposed, thereby reforming the silicon oxide film.

公开(公告)号：US20230260782A1

公开(公告)日：2023-08-17

申请号：US18305875

申请日：2023-04-24

Applicant: ASM IP HOLDING B.V.

Inventor： Jan Willem Maes ,  David Kurt de Roest ,  Oreste Madia

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0228 ,  H01L21/02126 ,  H01L21/31116 ,  H01L21/02211 ,  H01L21/02274

Abstract: Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H2 plasma, a second Ar plasma and an etchant.

公开(公告)号：US20230259043A1

公开(公告)日：2023-08-17

申请号：US18139459

申请日：2023-04-26

Applicant: ASM IP Holding B.V.

Inventor： Daniele Piumi ,  David Kurt de Roest

IPC: G03F7/00 ,  H01L23/00

CPC classification number: G03F7/70783 ,  H01L23/562 ,  G03F7/70033

Abstract: Methods of forming structures including a stress management layer for photolithography and structures including the stress management layer are disclosed. Further disclosed are systems for depositing a stress management layer. Exemplary methods include forming the stress management layer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition.

公开(公告)号：US20230249217A1

公开(公告)日：2023-08-10

申请号：US18300748

申请日：2023-04-14

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: B05D1/00 ,  C23C16/455 ,  H10K71/16

CPC classification number: B05D1/60 ,  C23C16/45525 ,  H10K71/164

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve.

公开(公告)号：US11718913B2

公开(公告)日：2023-08-08

申请号：US15997445

申请日：2018-06-04

Applicant: ASM IP Holding B.V.

Inventor： Sonti Sreeram ,  Junwei Su ,  Loc Vinh Tran

IPC: C23C16/455 ,  H01J37/32

CPC classification number: C23C16/45587 ,  C23C16/45557 ,  C23C16/45561 ,  C23C16/45563 ,  H01J37/32449 ,  H01J37/32458

Abstract: A gas distribution system, a reactor system including the gas distribution system, and method of using the gas distribution system and reactor system are disclosed. The gas distribution system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas distribution system coupled to a reaction chamber.

公开(公告)号：US20230238243A1

公开(公告)日：2023-07-27

申请号：US18100298

申请日：2023-01-23

Applicant: ASM IP Holding B.V.

Inventor： Mojtaba Samiee ,  Petri Raisanen ,  Dong Li ,  Yasiel Cabrera

IPC: H01L21/28 ,  H01L29/49

CPC classification number: H01L21/28247 ,  H01L29/4966 ,  H01L21/28088

Abstract: Methods of forming structures including a layer of metal carbon nitride (MCN) and of mitigating metal loss from and/or tuning the layer of metal carbon nitride are disclosed. Systems for forming the layers and mitigating metal loss and structures formed using the methods are also disclosed.

公开(公告)号：US20230238239A2

公开(公告)日：2023-07-27

申请号：US17073544

申请日：2020-10-19

Applicant: ASM IP Holding B.V.

Inventor： Kunal Bhatnagar

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/423

CPC classification number: H01L21/28088 ,  H01L29/4966 ,  H01L29/4236

Abstract: Methods for filling a gap feature on a substrate surface are disclosure. The methods may include: providing a substrate comprising one or more gap features into a reaction chamber; and depositing a metallic gap-fill film within the gap feature by performing repeated unit cycles of a cyclical deposition process. Semiconductor structures including metallic gap-fill films are also disclosed.

公开(公告)号：US20230230813A2

公开(公告)日：2023-07-20

申请号：US17744902

申请日：2022-05-16

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/32

CPC classification number: H01J37/32495 ,  C23C16/4405 ,  C23C16/4404 ,  C23C16/32

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.