公开(公告)号：US07438872B2

公开(公告)日：2008-10-21

申请号：US10507666

申请日：2003-12-26

申请人： Yoshiyuki Tanaka ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yoshiaki Watanabe ,  Sadao Tanaka

发明人： Yoshiyuki Tanaka ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yoshiaki Watanabe ,  Sadao Tanaka

IPC分类号： B01J19/00 ,  C23C16/00

CPC分类号： H01L21/67017 ,  H01L21/02178 ,  H01L21/02241 ,  H01L21/02255 ,  H01L21/31662

摘要： A steam oxidation apparatus is provided which is capable of ensuring a desirable controllability and reproducibility of the steam oxidation of an object-to-be-oxidized housed in the reactor, by suppressing condensation of the steam in the steam-accompanied inert gas supplied to the reactor.The steam oxidation apparatus 78 is an apparatus used for forming the current confinement structure into the surface-emitting laser element by subjecting the high-Al-content layer to steam oxidation, and is equipped with a reactor 42 for the steam oxidation, a steam-accompanied inert gas system for supplying a steam-accompanied inert gas to the reactor 42, an inert gas system for supplying an inert gas to the reactor 42, a reactor bypass pipe 52 for allowing the steam-accompanied inert gas system and inert gas system to bypass the reactor, and an exhaust system for discharging exhaust gas from the reactor 42. The steam oxidation apparatus 78 is further equipped with a thermostatic oven 72 which houses the H2O bubbler 60, second gas pipe 68, automatic open/close valves 66A to 66D, a portion of the third gas pipe 70 in the vicinity of the automatic open/close valves 66A to 66D, and a portion of the gas inlet port 42A side of the reactor 42.

摘要翻译： 提供一种蒸汽氧化装置，其能够通过抑制供给到反应器的蒸汽伴随的惰性气体中的蒸汽的冷凝来确保反应器中容纳的被氧化物体的蒸汽氧化的期望的可控性和再现性 反应堆。 蒸汽氧化装置78是用于通过使高Al含量层进行蒸汽氧化将电流限制结构形成到表面发射激光元件中的装置，并且配备有用于蒸汽氧化的反应器42， 用于向反应器42供应伴随蒸汽的惰性气体的惰性气体系统，用于向反应器42供应惰性气体的惰性气体系统，用于允许伴随蒸汽的惰性气体系统和惰性气体系统的反应器旁通管52 绕过反应器，以及用于从反应器42排出废气的排气系统。 蒸汽氧化装置78还配备有恒温炉72，其容纳H 2 O 2起泡器60，第二气体管68，自动打开/关闭阀66A至66D，第三部分 自动打开/关闭阀66A至66D附近的气体管70和反应器42的气体入口42A侧的一部分。

公开(公告)号：US07404296B2

公开(公告)日：2008-07-29

申请号：US10550401

申请日：2004-03-10

申请人： Yoshiaki Watanabe ,  Shinichi Sakamoto

发明人： Yoshiaki Watanabe ,  Shinichi Sakamoto

IPC分类号： F25B9/00

CPC分类号： F25B9/145 ,  F25B2309/1403 ,  F25B2309/1405 ,  F25B2309/1416

摘要： The present invention is a cooling device, wherein cooling is effected by enclosing a working fluid in a conduit, which is formed by providing a looped tube formed by interconnecting both respective ends of a stack combining a hot heat exchanger with a cold heat exchanger and a stack combining a cooling heat exchanger with a cooling output heat exchanger and by providing at least one or more acoustic wave generators outside or/and inside the looped tube, and then generating a standing wave and traveling wave in the working fluid, with the present cooling device being primarily capable of markedly shortening the time until the start of generation of the standing wave and traveling wave and providing stable control.

摘要翻译： 本发明是一种冷却装置，其中冷却是通过将管道中的工作流体包围而形成的，该导管通过提供一个环形管而形成，该管状管通过将热交换器与冷热交换器组合的堆叠的两端相互连接而形成， 将冷却热交换器与冷却输出热交换器组合在一起，并且通过在环管内部或/或内部提供至少一个或多个声波发生器，然后在工作流体中产生驻波和行波，当前的冷却 装置主要能够显着地缩短开始产生驻波和行波的时间并提供稳定的控制。

公开(公告)号：US20080118661A1

公开(公告)日：2008-05-22

申请号：US11662805

申请日：2005-09-16

申请人： Yoshiaki Watanabe ,  Takahiko Yanagitani

发明人： Yoshiaki Watanabe ,  Takahiko Yanagitani

IPC分类号： C23C4/06

CPC分类号： H01L21/02175 ,  C23C14/086 ,  C23C14/225 ,  C23C14/35 ,  C23C14/50 ,  C30B25/10 ,  C30B29/16 ,  C30B29/605 ,  H01J37/3405 ,  H01L21/02274 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02609 ,  H01L21/02631 ,  H01L21/31604 ,  H03H3/08

摘要： The present invention is made to provide a method of producing a ZnO thin film in which the c-axis is oriented in-plane over a large area. A ZnO target 28 as the material of the thin film is sputtered by using a magnetron sputtering system, and a flow of material (material flow) directed from the cathode 23 to the anode 24 is generated in a plasma. The material flow has a high density at its central part and has a low density as it departs from the central part. A substrate 20 is fixed at a position displaced from the central axis of a region 30 where the material flow is generated so as to be inclined relative to the central axis. Thereby, a temperature gradient is naturally formed on the substrate 20, and the c-axis of the ZnO thin film deposited on the substrate 20 is oriented in-plane to the temperature gradient direction. Since the substrate 20 is fixed so as to be inclined relative to the material flow, the area where the c-axis is consistently oriented in-plane becomes larger than before.

摘要翻译： 本发明提供一种制造其中c轴在大面积上面向取向的ZnO薄膜的方法。 通过使用磁控管溅射系统溅射作为薄膜材料的ZnO靶28，并且在等离子体中产生从阴极23指向阳极24的材料流（物料流）。 材料流在其中心部分具有高密度，并且在离开中心部分时具有低密度。 基板20被固定在与产生材料流动的区域30的中心轴线偏离以相对于中心轴线倾斜的位置。 由此，在基板20上自然地形成温度梯度，并且沉积在基板20上的ZnO薄膜的c轴朝向温度梯度方向。 由于基板20被固定为相对于材料流倾斜，所以c轴一致地定向在面内的面积变得比以前更大。

公开(公告)号：US20080105885A1

公开(公告)日：2008-05-08

申请号：US11876909

申请日：2007-10-23

申请人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Tatsuo Ohashi

发明人： Yoshiaki Watanabe ,  Tomonori Hino ,  Nobukata Okano ,  Hisayoshi Kuramochi ,  Tatsuo Ohashi

IPC分类号： H01L33/00

CPC分类号： H01L27/15 ,  H01L24/45 ,  H01L33/62 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.

摘要翻译： 发光器件包括第一化合物半导体层，有源层和第二化合物半导体层; 形成在第二化合物半导体层上的第二电极; 覆盖所述第二电极的绝缘层; 设置成穿过绝缘层，第二电极，第二化合物半导体层和有源层的第一开口; 设置成穿过绝缘层的第二开口; 形成在第一开口底部的第一化合物半导体层的露出部分上的第一电极; 通过所述第一开口从所述第一电极延伸到所述绝缘层的第一电极延伸部和包括所述绝缘层上的所述第一电极延伸部的一部分的第一焊盘部分; 以及第二焊盘部分，其连接到第二开口的底部处的第二电极的暴露部分。

公开(公告)号：US20070261839A1

公开(公告)日：2007-11-15

申请号：US11662252

申请日：2005-04-22

申请人： Yoshiaki Watanabe ,  Shinichi Sakamoto

发明人： Yoshiaki Watanabe ,  Shinichi Sakamoto

IPC分类号： B21D53/02

CPC分类号： F28D15/00 ,  F02G2243/54 ,  F25B9/145 ,  F25B2309/003 ,  F25B2309/1403 ,  F25B2309/1405 ,  F25B2309/1416

摘要： A thermoacoustic device 1 for improving heat exchange efficiency is provided which has a first stack 3a including stack constituent elements 3eL and 3eH laminated together, and a first high-temperature side heat exchanger 4 and a first low-temperature side heat exchanger 5, which are provided at two ends of the first stack 3a, in which a self-excited acoustic wave is generated by a temperature difference between the first high-temperature side heat exchanger 4 and the first low-temperature side heat exchanger 5 and is then converted to thermal energy in a stack 3b provided between a second high-temperature side heat exchanger 6 and a second low-temperature side heat exchanger 7. Between the first high-temperature side heat exchanger 4 and the first low-temperature side heat exchanger 5, and between the second high-temperature side heat exchanger 6 and the second low-temperature side heat exchanger 7, a stack constituent element 3eL having a low thermal conductivity, a stack constituent element 3eH having a high thermal conductivity, and a stack constituent element 3eL having a low thermal conductivity are provided in that order.

摘要翻译： 提供了一种用于提高热交换效率的热声装置1，其具有层叠在一起的堆叠构成元件3eL和3eH的第一堆叠体3a，第一高温侧热交换器4和第一低温侧热交换器5 设置在第一堆叠体3a的两端，其中通过第一高温侧热交换器4和第一低温侧热交换器5之间的温差产生自激励声波，并且是 然后转换成设置在第二高温侧热交换器6和第二低温侧热交换器7之间的堆3b中的热能。 在第一高温侧热交换器4和第一低温侧热交换器5之间以及第二高温侧热交换器6和第二低温侧热交换器7之间，具有堆叠构成元件3eL， 具有低导热性，具有高导热性的堆叠构成元件3eH和具有低热导率的堆叠构成元件3eL以该顺序提供。

公开(公告)号：US20060073323A1

公开(公告)日：2006-04-06

申请号：US11289301

申请日：2005-11-30

申请人： Yoshiaki Watanabe ,  Hiroyuki Kurihara ,  Takanori Yumoto ,  Shintaro Hara

发明人： Yoshiaki Watanabe ,  Hiroyuki Kurihara ,  Takanori Yumoto ,  Shintaro Hara

IPC分类号： B32B3/26 ,  B32B3/00 ,  B32B9/00

CPC分类号： B32B3/26 ,  B32B5/18 ,  B32B5/245 ,  B32B11/048 ,  B32B2266/025 ,  B32B2307/10 ,  C08J9/38 ,  C08J2205/05 ,  Y10T428/249953 ,  Y10T428/249976 ,  Y10T428/249987

摘要： To provide a foamed plastic provided with holes having a specified area at a specified aperture ratio. The holes are either a through-hole or a non-through-hole and properly provided. The foamed plastic is superior in sound absorbing property and has a strength. In the case of non-through-holes, the foamed plastic can beep a sound absorbing effect as well as a sound intercepting effect, and for example, when used as a cushioning material of collision to be used as the lower portion of a dash panel of a motorear, not only the cushioning of collision but also the absorption of noises from an engine can be achieved. On the other hand, a foamed plastic obtained by pre-foaming foamable beads and again foaming the pre-foamed beads is a foamed plastic having gas permeability, which is different from usual foamed plastics. In this case, when an air current resistance value is set within a specified range, an audible sound of a human being can be most effectively absorbed. Thus, the latter foamed plastic can also be used as a cushioning material of collision and the like similar to the former foamed plastic.

公开(公告)号：US07001851B2

公开(公告)日：2006-02-21

申请号：US10871900

申请日：2004-06-18

申请人： Yoshiyuki Tanaka ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yuichi Kuromizu ,  Yoshiaki Watanabe

发明人： Yoshiyuki Tanaka ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yuichi Kuromizu ,  Yoshiaki Watanabe

IPC分类号： H01I21/31 ,  H01L21/469

CPC分类号： H01L21/02178 ,  C23C8/02 ,  C23C8/16 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/31666

摘要： This invention provides a steam oxidation method of a matter to be oxidized with proper controllability and reproducibility. It is provided a steam oxidation method, where a semiconductor substrate (a matter to be oxidized) is housed in a steam oxidation reactor and is subjected to: a first step of supplying N2 gas to the reactor housing the semiconductor substrate and substituting the inside of the reactor with N2 gas; a second step of stopping supply of the N2 gas and supplying a steam-accompanied N2 gas, in which the N2 gas is accompanied with steam, to the reactor; a third step of increasing a temperature of the semiconductor substrate to 450° C. (a steam oxidation temperature) while supplying the steam-accompanied N2 gas; and a fourth step of holding the semiconductor substrate for a predetermined time at 450° C.

摘要翻译： 本发明提供了一种具有适当可控性和再现性的待氧化物质的蒸汽氧化方法。 提供一种蒸汽氧化法，其中将半导体衬底（待氧化的物质）容纳在蒸汽氧化反应器中，并经受：向反应器壳体供应N 2气体的第一步骤 半导体衬底并用N 2气体代替反应器内部; 第二步骤是停止供应N 2气体并供应伴随着N 2气体的蒸气伴随的N 2气体，其中伴随着N 2气体 用蒸汽，到反应器; 在提供伴随蒸汽的N 2气体的同时，将半导体衬底的温度升高至450℃（蒸汽氧化温度）的第三步骤; 以及在450℃下将半导体衬底保持预定时间的第四步骤。

公开(公告)号：US20050271106A1

公开(公告)日：2005-12-08

申请号：US11143806

申请日：2005-06-02

申请人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yuichi Kuromizu ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka

发明人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yuichi Kuromizu ,  Yoshinori Yamauchi ,  Yoshiyuki Tanaka

IPC分类号： H01L21/316 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01S5/00 ,  H01S5/042 ,  H01S5/18 ,  H01S5/183 ,  H01S5/22

CPC分类号： H01S5/18388 ,  H01S5/0421 ,  H01S5/18311 ,  H01S5/18394 ,  H01S2301/166

摘要： A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type AlwGa1-wAs layer as a top layer of a p-type DBR layer and forming refractive index distribution like that of a concave lens.

摘要翻译： 提供了能够像单一横向模式那样在单个峰值波束中进行激光振荡的表面发射半导体激光器和能够以高产率容易地制造这种激光器的制造方法。 当在n型半导体衬底上形成具有柱型台面结构的表面发射半导体激光器时，形成台面部分，直到形成p侧电极和n侧电极。 此后，在p侧和n侧电极之间施加电压，并且在提取输出光的同时对激光进行蒸汽气氛，从而在p型Al 2 O 3上形成Al氧化物层， Ga 1-w作为p型DBR层的顶层的层，并形成像凹透镜的折射率分布。

公开(公告)号：US20050078726A1

公开(公告)日：2005-04-14

申请号：US10944386

申请日：2004-09-17

申请人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yuichi Kuromizu ,  Yoshiyuki Tanaka

发明人： Yoshiaki Watanabe ,  Hironobu Narui ,  Yoshinori Yamauchi ,  Yuichi Kuromizu ,  Yoshiyuki Tanaka

IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/20 ,  H01S5/343 ,  H01S5/40 ,  H01S5/42

CPC分类号： B82Y20/00 ,  H01S5/02284 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/18344 ,  H01S5/34313 ,  H01S5/4012 ,  H01S5/4087 ,  H01S5/423 ,  H01S2301/166

摘要： A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.

摘要翻译： 通过简单的结构和制造工艺排列具有不同激光波长的多个垂直腔表面发射激光器件，而不增加器件电阻。 每个垂直腔表面发射激光器件包括包括有源层和电流限制层的分层结构。 层叠结构中的电流限制部分的面积对应于从每个垂直腔表面发射激光器件发射的激光的波长设定。 因此，多个垂直腔表面发射激光器件发射具有不同激光波长的激光。

公开(公告)号：US06595149B2

公开(公告)日：2003-07-22

申请号：US10225213

申请日：2002-08-20

申请人： Tsuneo Onodera ,  Yoshiaki Watanabe ,  Katsuhisa Ichikawa ,  Yasumi Fukuzumi ,  Shigetaka Isoyama

发明人： Tsuneo Onodera ,  Yoshiaki Watanabe ,  Katsuhisa Ichikawa ,  Yasumi Fukuzumi ,  Shigetaka Isoyama

IPC分类号： A01G900

CPC分类号： A01C7/048 ,  A01C1/042 ,  Y10S111/90 ,  Y10T29/49448

摘要： A seedling-growing sheet (1) is in the form of a laminate body (2) consisting of a band-like support member (3) and a porous sheet body (4) laminated on the support member (3). A large number of receptacles (6) for housing rice seeds (15) are formed in the sheet body (4) of the laminate body (2). These receptacles (6) are arranged apart from each other in the longitudinal direction of the support member (3). Formed in the laminate body (2) are cutting perforations (8) consisting of a large number of cut lines (9) along which planting pieces (10) each having at least one receptacle (6) are cut away from the laminate body (2). These cutting perforations (8) are arranged apart from each other in the longitudinal direction of the laminate body (2).

摘要翻译： 秧苗栽培片（1）为叠层体（2），层叠体（2）由层状的支撑体（3）和带状支撑体（3）构成。 在层叠体（2）的片体（4）中形成有用于容纳米种子（15）的大量容器（6）。 这些插座（6）在支撑构件（3）的纵向上彼此分开布置。 在层叠体（2）中形成有由大量切割线（9）组成的切割穿孔（8），每个具有至少一个容器（6）的植物片（10）从层压体（2）切除 ）。 这些切割穿孔（8）在层压体（2）的纵向上彼此分开布置。