公开(公告)号：US20230395449A1

公开(公告)日：2023-12-07

申请号：US18328795

申请日：2023-06-05

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： SeungHyun LEE ,  HyeonChul LEE ,  YuJin HWANG ,  DaYoung KWON

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L23/3128 ,  H01L21/565 ,  H01L24/32 ,  H01L2924/3025 ,  H01L2224/32225

Abstract: A method for forming a semiconductor device is provided. The method include: providing a package including: a substrate; a stress absorbing layer disposed on a top surface of the substrate; an electronic component mounted on the top surface of substrate; and a first contact pad disposed on the top surface of the substrate and exposed from the stress absorbing layer; providing a mold including: a first cavity exposed from a bottom surface of the mold; and a recess formed adjacent to the first cavity; engaging the mold and the package with the first cavity over the electronic component and the recess between the electronic component and the first contact pad; and injecting encapsulation material into the first cavity to form an encapsulant over the electronic component.

公开(公告)号：US20230386888A1

公开(公告)日：2023-11-30

申请号：US18317093

申请日：2023-05-15

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： GunHyuck LEE ,  Yujeong JANG

IPC: H01L21/683 ,  H01L21/56 ,  H01L21/786

CPC classification number: H01L21/6836 ,  H01L21/561 ,  H01L21/786 ,  H01L2221/68331 ,  H01L2221/68381

Abstract: A method for making semiconductor devices includes: attaching a substrate with a plurality of electronic components onto a composite tape having an adhesive layer which is sensitive to ultraviolet (UV) irradiation and a UV-transparent base film, wherein the substrate is attached onto the adhesive layer of the composite tape; placing the substrate and the composite tape on a UV-transparent carrier, wherein the UV-transparent carrier is in contact with the UV-transparent base film of the composite tape; singulating the substrate into a plurality of semiconductor devices each having one of the plurality of electronic components; depositing a shielding material on the plurality of semiconductor devices to form a shielding layer on each of the plurality of semiconductor devices; irradiating a UV light to the composite tape through the UV-transparent carrier to reduce adhesivity of the adhesive layer; and detaching the plurality of semiconductor devices from the UV-transparent carrier.

公开(公告)号：US11830785B2

公开(公告)日：2023-11-28

申请号：US17450146

申请日：2021-10-06

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： TaeKeun Lee ,  Youngmin Kim ,  Yongmin Kim

IPC: H01L23/367 ,  H01L25/065 ,  H01L25/10 ,  H01L25/00

CPC classification number: H01L23/3675 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/50

Abstract: A semiconductor device has a substrate and a first semiconductor die disposed over the substrate. A subpackage is also disposed over the substrate. A stiffener is disposed over the substrate around the first semiconductor die and subpackage. A heat spreader is disposed over the stiffener. The heat spreader is thermally coupled to the first semiconductor die. The heat spreader has an opening over the subpackage.

公开(公告)号：US20230369241A1

公开(公告)日：2023-11-16

申请号：US18359688

申请日：2023-07-26

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  JinHee Jung ,  JiWon Lee ,  YuJeong Jang

IPC: H01L23/552 ,  H01L23/31 ,  H01L25/065 ,  H01L21/3213

CPC classification number: H01L23/552 ,  H01L23/3107 ,  H01L25/0655 ,  H01L21/32131

Abstract: A semiconductor device is formed by providing a semiconductor package including a shielding layer and forming a slot in the shielding layer using a laser. The laser is turned on and exposed to the shielding layer with a center of the laser disposed over a first point of the shielding layer. The laser is moved in a loop while the laser remains on and exposed to the shielding layer. Exposure of the laser to the shielding layer is stopped when the center of the laser is disposed over a second point of the shielding layer. A distance between the first point and the second point is approximately equal to a radius of the laser.

公开(公告)号：US20230326872A1

公开(公告)日：2023-10-12

申请号：US17658240

申请日：2022-04-06

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： KyouYong Han ,  WonJung Kim ,  WoongHui Park

IPC: H01L23/552

CPC classification number: H01L23/552

Abstract: A semiconductor device has a substrate. A first semiconductor die and second semiconductor die are disposed over the substrate. A metal bar has an EMI-absorbing material disposed over the metal bar. The metal bar is disposed over the substrate between the first semiconductor die and second semiconductor die. An encapsulant is deposited over the first semiconductor die, second semiconductor die, and metal bar. A shielding layer is formed over the encapsulant.

公开(公告)号：US20230288474A1

公开(公告)日：2023-09-14

申请号：US18180103

申请日：2023-03-07

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： WonJung KIM ,  ZunBae MOON ,  KyouYong HAN

IPC: G01R31/28 ,  G01R1/04

CPC classification number: G01R31/2896 ,  G01R1/0441

Abstract: A test socket and a test apparatus for testing a semiconductor package are provided. The test socket includes: a first connection structure including a first insulating body and a plurality of conductive plugs within the first insulating body; and a second connection structure disposed on the first connection structure and including a second insulating body and a plurality of elastic conductive pillars, the second insulating body being elastic, and the plurality of elastic conductive pillars being formed by arranging a plurality of conductive particles in the second insulating body in a vertical direction; wherein the plurality of elastic conductive pillars are in vertical alignment with the plurality of plugs of the first connection structure, respectively, and the conductive particles in each of the plurality of elastic conductive pillars can produce electrical conductivity in response to an external pressure applied onto the elastic conductive pillar.

公开(公告)号：US20230268315A1

公开(公告)日：2023-08-24

申请号：US18165347

申请日：2023-02-07

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： JiSik MOON ,  DongJun SEO ,  JungSub LEE ,  KyoWang KOO

IPC: H01L23/00 ,  H01L21/683 ,  H01L21/78 ,  H01L23/552

CPC classification number: H01L24/94 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/552 ,  H01L2224/94

Abstract: The present application relates to a method for making semiconductor packages. The method for making semiconductor packages comprises forming a semiconductor package array, the semiconductor package array having at its first side a interconnect encasing layer; attaching an adhesive tape onto the interconnect encasing layer, wherein the adhesive layer has an adhesive layer and a base film; removing, by a laser beam, the base film of the adhesive tape at a predetermined ablation region; and singulating the semiconductor package array along the predetermined ablation regions to separate the semiconductor package array into a plurality of semiconductor packages.

公开(公告)号：US20230260865A1

公开(公告)日：2023-08-17

申请号：US18305913

申请日：2023-04-24

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： KyungOe Kim ,  Wagno Alves Braganca, JR. ,  DongSam Park

IPC: H01L23/367 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L23/367 ,  H01L21/565 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/4871 ,  H01L23/3185 ,  H01L23/49816 ,  H01L23/49822 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/15311 ,  H01L2924/18161

Abstract: A semiconductor device has a heat spreader with an opening formed through the heat spreader. The heat spreader is disposed over a substrate with a semiconductor die disposed on the substrate in the opening. A thermally conductive material, e.g., adhesive or an elastomer plug, is disposed in the opening between the heat spreader and semiconductor die. A conductive layer is formed over the substrate, heat spreader, and thermally conductive material.

公开(公告)号：US11728281B2

公开(公告)日：2023-08-15

申请号：US17205779

申请日：2021-03-18

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoWang Koo ,  SungWon Cho ,  BongWoo Choi

IPC: H01L21/56 ,  H01L21/48 ,  H01L23/552 ,  H01L23/31 ,  H01R43/20 ,  H01R43/26 ,  H01R12/79 ,  H01R12/52

CPC classification number: H01L23/552 ,  H01L21/4814 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/3121 ,  H01R12/52 ,  H01R12/79 ,  H01R43/205 ,  H01R43/26 ,  H01L21/565

Abstract: A semiconductor device has a substrate including a terminal and an insulating layer formed over the terminal. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the insulating layer over the terminal is exposed from the encapsulant. A shielding layer is formed over the encapsulant and terminal. A portion of the shielding layer is removed to expose the portion of the insulating layer. The portion of the insulating layer is removed to expose the terminal. The portion of the shielding layer and the portion of the insulating layer can be removed by laser ablation.

公开(公告)号：US20230215721A1

公开(公告)日：2023-07-06

申请号：US17647040

申请日：2022-01-05

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  JinHee Jung ,  YuJeong Jang ,  JiWon Lee

IPC: H01L21/02 ,  H01L21/67 ,  B08B5/02 ,  B08B15/02 ,  B08B5/04

CPC classification number: H01L21/02057 ,  H01L21/67028 ,  B08B5/02 ,  B08B15/02 ,  B08B5/04

Abstract: A semiconductor manufacturing equipment has a support platform and a substrate disposed over the support platform. A first electrical component is disposed over a first surface of the substrate. A second electrical component is disposed over a second surface of the substrate opposite the first surface of the substrate. A suction hood is disposed over the substrate. A gas is introduced over the substrate to circulate residue while drawing the residue vertically into the suction hood. The gas can be introduced with a gas nozzle or air knife. The gas can be introduced from a gas conduit disposed at least partially around the substrate. The gas conduit can extend completely around the substrate. The gas nozzles are sequentially placed around the gas conduit. The gas can be a stable or inert gas. The residue is displaced away from the second electrical component.