Abstract:
A printed circuit board is disclosed. The printed circuit board comprises a substrate having a top surface and a bottom surface. A ground plane is on the bottom surface. A signal trace is on the top surface along a first direction. At least two isolated power planes are on the top surface adjacent to opposite sides of the signal trace, respectively. A conductive connection along a second direction couples to the two power planes, across the signal trace without electrically connecting to the signal trace, wherein the signal trace doesn't pass over any split of the ground plane.
Abstract:
A leadframe package includes a die pad with four unitary, outwardly extending slender bars; a plurality of leads arranged along periphery of the die pad; a separate pad segment separated from the die pad and isolated from the plurality of leads; a semiconductor die mounted on an upper side of the die pad, wherein the semiconductor die contains first bond pads wire-bonded to respective the plurality of leads and a second bond pad wire-bonded to the separate pad segment; and a molding compound encapsulating the semiconductor die, the upper side of the die pad, the first suspended pad segment and inner portions of the plurality of leads.
Abstract:
The present invention discloses a dielectric structure, a transistor and a manufacturing method thereof with praseodymium oxide. The transistor with praseodymium oxide comprises at least a III-V substrate, a gate dielectric layer and a gate. The gate dielectric layer is disposed on the III-V substrate, and the gate is disposed on the gate dielectric layer, and the gate dielectric layer is praseodymium oxide (PrxOy), which has a high dielectric constant and a high band gap. By using the praseodymium oxide (Pr6O11) as the material of the gate dielectric layer in the present invention, the leakage current could be inhibited, and the equivalent oxide thickness (EOT) of the device with the III-V substrate could be further lowered.
Abstract translation:本发明公开了一种具有氧化镨的介电结构,晶体管及其制造方法。 具有氧化镨的晶体管至少包括III-V衬底,栅极电介质层和栅极。 栅极电介质层设置在III-V衬底上,并且栅极设置在栅极介电层上,并且栅极电介质层是具有高介电常数和高带隙的氧化镨(PrxOy)。 通过在本发明中使用氧化镨(Pr 6 O 11)作为栅极介质层的材料,可以抑制漏电流,并且可以进一步降低与III-V衬底的器件的等效氧化物厚度(EOT)。
Abstract:
A barrier layer, hafnium oxide layer, between a III-V semiconductor layer and an lanthanum oxide layer is used to prevent interaction between the III-V semiconductor layer and the lanthanum oxide layer. Meanwhile, the high dielectric constant of the lanthanum oxide can be used to increase the capacitance of the semiconductor device.
Abstract:
The present disclosure provides a surface processing apparatus, comprising a reaction chamber provided to form a deposition layer on a substrate, a carrying chamber connected to the reaction chamber and comprising a slot, and a plasma generator installed in the slot and providing plasma to process the substrate surface. Whereby the disclosure further provides a surface processing method, which flatten surface of a deposition layer on the substrate when the substrate is carried form the reaction chamber to the carrying chamber after the deposition process in the reaction chamber.
Abstract:
A charging apparatus for laptop computer with multiple-batteries is used in a first battery unit and a second battery unit. The charging apparatus comprises a micro controller unit; a first charging switch unit electrically connected to the micro controller unit; a second charging switch unit electrically connected to the micro controller unit; and a charging unit electrically connected to the first charging switch unit and the second charging switch unit. The micro controller unit controls the charging unit charging the first battery unit and the second battery unit via controlling the first charging switch unit and the second charging switch unit. The charging apparatus charges multi-batteries simultaneously.
Abstract:
A method includes forming first and second fins of a finFET extending above a semiconductor substrate, with a shallow trench isolation (STI) region in between, and a distance between a top surface of the STI region and top surfaces of the first and second fins. First and second fin extensions are provided on top and side surfaces of the first and second fins above the top surface of the STI region. Material is removed from the STI region, to increase the distance between the top surface of the STI region and top surfaces of the first and second fins. A conformal stressor dielectric material is deposited over the fins and STI region. The conformal dielectric stressor material is reflowed, to flow into a space between the first and second fins above a top surface of the STI region, to apply stress to a channel of the finFET.
Abstract:
An overspeed system for a vehicle is disclosed. The overspeed system may have a power source, a transmission unit, and a torque converter assembly operatively coupling the power source to the transmission unit. The overspeed system may also have a travel speed sensor configured to generate a signal indicative of a vehicle speed, and a controller in communication with the torque converter assembly and the travel speed sensor. The controller may be configured to prevent a decoupling of the torque converter assembly in response to the signal.
Abstract:
An electrical connector includes a plug connector, a receptacle connector and a locking element. The plug connector includes an insulating housing, a plurality of terminals mounted into the insulating housing, a shell wrapping the insulating housing. The locking element fixed on the plug connector has a top plate, two opposite sides of the top plate are extended downwards to form a pair of locking plates. A front side of the locking element is extended perpendicularly and outwardly to form at least one connecting arm. A top side of the connecting arm is extended frontward to form a locking arm. The locking arm has a front end extended perpendicularly to form a locking end. When the plug connector is inserted into the receptacle connector, the locking element hooks locking potions provided by the receptacle connector to ensure the connection stability between the plug connector and the receptacle connector.
Abstract:
A communication device and method for prompting incoming events of the communication device are provided. The method monitors environment situation around the communication device when the communication device receives an incoming event, and determines an environment mode of the communication device according to the environment situation. The method further searches a storage system of the communication device for a prompt mode matching the environment mode, and prompts a user using the prompt mode so as to avoid urgent or important events.