公开(公告)号：US09239427B1

公开(公告)日：2016-01-19

申请号：US14330956

申请日：2014-07-14

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring

IPC: G02B6/12 ,  G02B6/126 ,  H01S5/00

CPC classification number: H01S5/0268 ,  G02B6/126 ,  G02B2006/12085 ,  G02B2006/12121 ,  H01S3/081 ,  H01S5/005 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/1003 ,  H01S5/125 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/32341 ,  H01S5/34333

Abstract: A monolithically integrated optical device. The device has a gallium and nitrogen containing substrate member having a surface region configured on either a non-polar or semi-polar orientation. The device also has a first waveguide structure configured in a first direction overlying a first portion of the surface region. The device also has a second waveguide structure integrally configured with the first waveguide structure. The first direction is substantially perpendicular to the second direction.

Abstract translation: 单片集成光学器件。 该器件具有含氮和氮的衬底构件，其具有以非极性或半极性取向配置的表面区域。 该装置还具有第一波导结构，该第一波导结构被配置在覆盖表面区域的第一部分的第一方向上。 该装置还具有与第一波导结构一体配置的第二波导结构。 第一方向基本上垂直于第二方向。

公开(公告)号：US20150318670A1

公开(公告)日：2015-11-05

申请号：US14754043

申请日：2015-06-29

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring

IPC: H01S5/343 ,  H01S5/32 ,  H01S5/028 ,  H01S5/20 ,  H01S5/22 ,  H01S5/02

CPC classification number: H01S5/2201 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1085 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34333 ,  H01S5/4025

Abstract: Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.

公开(公告)号：US09166374B1

公开(公告)日：2015-10-20

申请号：US14604223

申请日：2015-01-23

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  You-Da Lin ,  Christiane Elsass

IPC: H01S5/00 ,  H01S5/34 ,  H01S5/343

CPC classification number: H01S5/34333 ,  H01L21/0274 ,  H01L21/042 ,  H01L21/28123 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/469 ,  H01L21/4828 ,  H01L33/08 ,  H01L33/16 ,  H01L41/332 ,  H01S5/0014 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/3202 ,  H01S5/3214 ,  H01S5/3216 ,  H01S5/3401

Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.

Abstract translation: 光学装置包括含镓和氮的衬底，其包括以（20-2-1）取向配置的表面区域，（30-3-1）取向或（30-31）取向，在+/- 10 朝向朝向c平面和/或a平面的角度。 还公开了具有超过表面区域的量子阱区的光学器件。

公开(公告)号：US09166373B1

公开(公告)日：2015-10-20

申请号：US14603948

申请日：2015-01-23

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Mathew Schmidt ,  Bryan Ellis ,  Hua Huang ,  Melvin McLaurin ,  Christiane Poblenz Elsass

IPC: H01S5/00 ,  H01S5/32 ,  H01S5/343 ,  H01S5/30 ,  H01S5/323 ,  H01S5/10 ,  H01S5/20

CPC classification number: H01S5/3202 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/2018 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/3063 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4031 ,  H01S2304/04

Abstract: Laser devices formed on a semipolar surface region of a gallium and nitrogen containing material are disclosed. The laser devices have a laser stripe configured to emit a laser beam having a cross-polarized emission state.

Abstract translation: 公开了在含镓和氮的材料的半极性表面区域上形成的激光器件。 激光器件具有被配置为发射具有交叉极化发射状态的激光束的激光条纹。

公开(公告)号：US09106049B1

公开(公告)日：2015-08-11

申请号：US14487638

申请日：2014-09-16

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Mathew C. Schmidt ,  Yu-Chia Chang

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/34

CPC classification number: H01S5/0427 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/06 ,  H01S5/0425 ,  H01S5/0651 ,  H01S5/0652 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34 ,  H01S5/3407 ,  H01S5/3414 ,  H01S5/34333 ,  H01S5/405 ,  H01S5/4087 ,  H01S2301/02

Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

Abstract translation: 描述了提供具有广谱的激光二极管的系统和方法。 具有宽或多峰频谱输出操作的GaN基激光二极管通过具有产生多峰频谱输出的单个激光二极管器件，以超亮度模式操作或通过使用RF源和/或反馈来获得各种配置 信号。 在一些其他实施例中，通过使多个激光器件输出不同波长的不同激光器来实现多峰输出。

公开(公告)号：US20150131688A1

公开(公告)日：2015-05-14

申请号：US14601651

申请日：2015-01-21

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring

IPC: H01S5/343 ,  H01S5/028 ,  H01S5/32 ,  H01S5/22

CPC classification number: H01S5/2201 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1085 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34333 ,  H01S5/4025

Abstract: Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.

公开(公告)号：US20150111325A1

公开(公告)日：2015-04-23

申请号：US14480398

申请日：2014-09-08

Applicant: Soraa Laser Diode, Inc.

Inventor： Po Shan Hsu ,  Melvin McLaurin ,  James W. Raring ,  Alexander Stzein ,  Benyamin Buller

IPC: H01S5/028

CPC classification number: H01S5/34333 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/22 ,  H01S2304/00

Abstract: In an example, the present invention provides a method for fabricating a laser diode device. The method includes providing a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material; and a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material, and an interface region overlying the first transparent conductive oxide material. The method includes bonding the interface region to a handle substrate and subjecting the release material to an energy source to initiate release of the gallium and nitrogen containing substrate member.

Abstract translation: 在一个实例中，本发明提供一种制造激光二极管器件的方法。 该方法包括提供包含表面区域，覆盖表面区域的剥离材料，含n型镓和氮的材料的含镓和氮的衬底构件; 覆盖n型含镓和氮的材料的有源区，p型含镓和氮的材料; 以及覆盖所述p型含镓和氮的材料的第一透明导电氧化物材料以及覆盖所述第一透明导电氧化物材料的界面区域。 该方法包括将界面区域结合到手柄基板上，并将释放材料经受能量源以引发含镓和氮的衬底构件的释放。

公开(公告)号：US10903625B2

公开(公告)日：2021-01-26

申请号：US16586100

申请日：2019-09-27

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32 ,  H01S5/00 ,  H01S5/022 ,  H01S5/40

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

公开(公告)号：US10903623B2

公开(公告)日：2021-01-26

申请号：US16411977

申请日：2019-05-14

Applicant: Soraa Laser Diode, Inc.

Inventor： Melvin McLaurin ,  James W. Raring

IPC: H01L33/12 ,  H01S5/343 ,  H01L33/00 ,  H01L21/02 ,  H01L21/784 ,  H01S5/22 ,  H01S5/042 ,  H01S5/022 ,  H01S5/02 ,  C30B29/40 ,  H01L33/32

Abstract: The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

公开(公告)号：US10854776B1

公开(公告)日：2020-12-01

申请号：US16796154

申请日：2020-02-20

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L33/00 ,  H01L29/205 ,  H01L33/06 ,  H01L29/66 ,  H01L23/00 ,  H01L33/32 ,  H01S5/02 ,  H01L21/311 ,  H01L21/683 ,  H01L27/06 ,  H01L27/12 ,  H01L21/02 ,  H01L29/20 ,  H01L27/088 ,  H01L27/15 ,  H01S5/227 ,  H01S5/343

Abstract: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.