公开(公告)号：US20120293070A1

公开(公告)日：2012-11-22

申请号：US13108052

申请日：2011-05-16

Applicant: Peter Kurunczi ,  Frank Sinclair ,  Costel Biloiu ,  Ludovic Godet ,  Ernest Allen

Inventor： Peter Kurunczi ,  Frank Sinclair ,  Costel Biloiu ,  Ludovic Godet ,  Ernest Allen

IPC: H05H1/24

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J37/3211 ,  H01J37/32119 ,  H01J37/32669

Abstract: A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, a conductive or ferrite material is used to influence a section of the antenna, where a section is made up of portions of multiple coiled segments. In another embodiment, a ferrite material is used to influence a portion of the antenna. In another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.

Abstract translation: 公开了一种等离子体处理装置和方法，其在外壳内产生均匀的等离子体。 在一个实施例中，导电或铁氧体材料用于影响天线的一部分，其中一部分由多个线圈段的部分组成。 在另一个实施例中，铁氧体材料用于影响天线的一部分。 在另一个实施例中，通过改变外壳的内部形状和体积来提高等离子体的均匀性。

公开(公告)号：US08314403B2

公开(公告)日：2012-11-20

申请号：US12869029

申请日：2010-08-26

Applicant: John A. Notte, IV

Inventor： John A. Notte, IV

IPC: H01J3/00

CPC classification number: H01J49/168 ,  H01J27/26 ,  H01J37/065 ,  H01J37/08 ,  H01J37/28 ,  H01J2237/06341 ,  H01J2237/0807 ,  H01J2237/28

Abstract: Coated tips, as well as related articles, systems and methods are disclosed.

Abstract translation: 披露了涂层技巧，以及相关文章，系统和方法。

公开(公告)号：US08304033B2

公开(公告)日：2012-11-06

申请号：US12428973

申请日：2009-04-23

Applicant: Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

Inventor： Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

IPC: C23C14/10 ,  C23C14/48 ,  C23C14/14 ,  B05D3/06 ,  H01L21/263 ,  C23C14/08 ,  H01L21/423 ,  H01L21/425 ,  H01L21/265

CPC classification number: H01J37/08 ,  H01J37/317 ,  H01J2237/061 ,  H01J2237/0812 ,  H01J2237/0825 ,  H01J2237/0827

Abstract: Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.

Abstract translation: 公开了使用多喷嘴和撇渣器组件在基底上生长，改性，沉积或掺杂层的操作方法，用于在气体簇离子束（GCIB）系统中引入工艺气体混合物或多种工艺气体混合物 。 还公开了一种在衬底上形成浅沟槽隔离（STI）结构的方法，例如使用具有两个单独气体供应的多喷嘴系统的SiO 2 STI结构，例如提供含硅气体和含氧气体， 含气。

公开(公告)号：US08269194B2

公开(公告)日：2012-09-18

申请号：US12733089

申请日：2008-08-06

Applicant: Takashi Kaito ,  Junichi Tashiro ,  Yasuhiko Sugiyama ,  Kouji Iwasaki ,  Toshiaki Fujii ,  Kazuo Aita ,  Takashi Ogawa

Inventor： Takashi Kaito ,  Junichi Tashiro ,  Yasuhiko Sugiyama ,  Kouji Iwasaki ,  Toshiaki Fujii ,  Kazuo Aita ,  Takashi Ogawa

IPC: H01J49/00

CPC classification number: H01J37/3056 ,  G01N1/286 ,  G01N1/32 ,  G03F1/74 ,  G03F1/84 ,  H01J37/08 ,  H01J37/3005 ,  H01J2237/0805 ,  H01J2237/0807 ,  H01J2237/31745

Abstract: A composite focused ion beam device has a sample stage for supporting a sample, a first ion beam irradiation system that irradiates a first ion beam for processing the sample, and a second ion beam irradiation system that irradiates a second ion beam for processing or observing the sample. The first ion beam irradiation system has a liquid metal ion source that generates first ions for forming the first ion beam. The second ion beam irradiation system has a gas field ion source that generates second ions for forming the second ion beam. The first ion beam irradiated by the first ion beam irradiation system has a first beam diameter and the second ion beam irradiated by the second ion beam irradiation system has a second beam diameter smaller than the first beam diameter. The first and second ion beam irradiation systems are disposed relative to the sample stage so that axes of the first and second ion beams are orthogonal to a tilt axis of the sample stage.

Abstract translation: 复合聚焦离子束装置具有用于支撑样品的样品台，照射用于处理样品的第一离子束的第一离子束照射系统和照射第二离子束以用于处理或观察样品的第二离子束照射系统 样品。 第一离子束照射系统具有产生用于形成第一离子束的第一离子的液态金属离子源。 第二离子束照射系统具有产生用于形成第二离子束的第二离子的气体场离子源。 由第一离子束照射系统照射的第一离子束具有第一光束直径，并且由第二离子束照射系统照射的第二离子束具有小于第一光束直径的第二光束直径。 第一和第二离子束照射系统相对于样品台设置，使得第一和第二离子束的轴线垂直于样品台的倾斜轴。

公开(公告)号：US08263944B2

公开(公告)日：2012-09-11

申请号：US12340812

申请日：2008-12-22

Applicant: John Bon-Woong Koo ,  David J. Twiss ,  Chris Campbell ,  Frank Sinclair ,  Alexander S. Perel ,  Craig R. Chaney ,  Wilhelm P. Platow ,  Eric R. Cobb

Inventor： John Bon-Woong Koo ,  David J. Twiss ,  Chris Campbell ,  Frank Sinclair ,  Alexander S. Perel ,  Craig R. Chaney ,  Wilhelm P. Platow ,  Eric R. Cobb

IPC: H01J27/00

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/061

Abstract: In an ion implanter, an inert gas is directed at a cathode assembly near an ion source chamber via a supply tube. The inert gas is provided with a localized directional flow toward the cathode assembly to reduce unwanted concentrations of cleaning or dopant gases introduced into the ion source chamber, thereby reducing the effects of unwanted filament growth in the cathode assembly and extending the manufacturing life of the ion source.

Abstract translation: 在离子注入机中，惰性气体通过供应管被引导到离子源室附近的阴极组件。 向惰性气体提供朝向阴极组件的局部定向流，以减少引入离子源室的清洁或掺杂气体的不期望浓度，从而减少阴极组件中不想要的细丝生长的影响并延长离子的制造寿命 资源。

公开(公告)号：US08253334B2

公开(公告)日：2012-08-28

申请号：US12804277

申请日：2010-07-19

Applicant: Manuel A. Jerez

Inventor： Manuel A. Jerez

IPC: H01J27/08 ,  H01J61/04 ,  H01J1/88

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J2237/061 ,  H01J2237/082 ,  H01J2237/31701

Abstract: A cathode sub-assembly is comprised of a retainer, a cathode and a collar, each of which has smooth unthreaded surfaces that slidably engage each other. A shield serves to hold the sub-assembly in a support plate. The cathode projects from the sub-assembly into an arc chamber with a tortuous path created therebetween for passage of a plasma flow.

公开(公告)号：US20120199758A1

公开(公告)日：2012-08-09

申请号：US13501561

申请日：2010-10-12

Applicant: Yoshimi Kawanami ,  Tohru Ishitani

Inventor： Yoshimi Kawanami ,  Tohru Ishitani

IPC: H01J3/14 ,  H01T23/00

CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/3056 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/0807

Abstract: Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode (1) and the temperature of a gas injection port part (3) of a gas supply unit.

Abstract translation: 提供能够发出适合于处理样品的高亮度的重离子的气体电离离子源。 根据本发明的气体电离离子源包括温度控制器，其分别控制发射极电极（1）的末端的温度和气体供给单元的气体注入口部分（3）的温度。

公开(公告)号：US08217366B2

公开(公告)日：2012-07-10

申请号：US12846525

申请日：2010-07-29

Applicant: Moon-Youn Jung ,  Nam Soo Myung ,  Hyun Woo Song ,  Hyeon-Bong Pyo

Inventor： Moon-Youn Jung ,  Nam Soo Myung ,  Hyun Woo Song ,  Hyeon-Bong Pyo

IPC: H01J27/02 ,  H01J49/10 ,  A61N5/00

CPC classification number: H01J27/26 ,  A61N2005/1087 ,  G21K5/04 ,  H01J37/08 ,  H01J2237/081 ,  H01J2237/082 ,  Y10S977/949

Abstract: Provided are a carbon ion generating device and a tumor treatment apparatus using the same. The carbon ion generating device includes a carbon nanostructure, a carbon emitting structure, an ionizing structure, and an accelerator. The carbon emitting structure is configured to induce an emission of carbon atoms from one end of the carbon nanostructure. The ionizing structure is configured to ionize the emitted carbon atoms. The accelerator is configured to accelerate the ionized carbon atoms.

Abstract translation: 提供一种碳离子发生装置和使用其的肿瘤治疗装置。 碳离子产生装置包括碳纳米结构，碳排放结构，电离结构和促进剂。 碳排放结构被配置为从碳纳米结构的一端诱导碳原子的发射。 电离结构被配置成电离发射的碳原子。 加速器被配置为加速电离的碳原子。

公开(公告)号：US08196546B1

公开(公告)日：2012-06-12

申请号：US12950376

申请日：2010-11-19

Applicant: Sarko Cherekdjian

Inventor： Sarko Cherekdjian

IPC: H01L21/00

CPC classification number: H01J37/32366 ,  C23C14/48 ,  C23C14/54 ,  C23C14/56 ,  H01J37/08 ,  H01J37/317 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/024 ,  H01J2237/0827 ,  H01J2237/31701 ,  H01L21/2236 ,  H01L21/76254

Abstract: Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.

Abstract translation: 方法和装置提供：第一等离子体源，其中所述等离子体包括第一种离子; 第二等离子体源，其中所述等离子体包括第二种离子; 从第一和第二来源选择等离子体; 并且将第一种离子或第二种离子加速到半导体晶片。

公开(公告)号：US08193513B2

公开(公告)日：2012-06-05

申请号：US12184082

申请日：2008-07-31

Applicant: William F. DiVergilio ,  Daniel R. Tieger ,  Michael A. Graf

Inventor： William F. DiVergilio ,  Daniel R. Tieger ,  Michael A. Graf

IPC: H01J27/00

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/0827 ,  H01J2237/30472

Abstract: A hybrid ion source, comprising a source body configured to create plasma therein, from a first material, wherein the first material comprises one of monatomic gases, small molecule gases, large molecule gases, reactive gases, and solids, a low power plasma generation component operably associated with the source body, a high power plasma generation component operably associated with the source body and an extraction aperture configured to extract ions of the ion plasma from the source body.

Abstract translation: 一种混合离子源，包括被配置为在其中从第一材料产生等离子体的源体，其中第一材料包括单原子气体，小分子气体，大分子气体，反应性气体和固体中的一种，低功率等离子体产生部件 可操作地与源体相关联，与源体可操作地相关联的高功率等离子体产生部件和被配置为从源体提取离子等离子体的离子的提取孔。