公开(公告)号：US20150069217A1

公开(公告)日：2015-03-12

申请号：US14023525

申请日：2013-09-11

申请人： Geoff W. Taylor

发明人： Geoff W. Taylor

IPC分类号： H01L27/146 ,  H01L31/0352

CPC分类号： H01L31/035218 ,  H01L27/1461 ,  H01L27/14616 ,  H01L27/14629 ,  H01L27/14643 ,  H01L27/14652 ,  H01L27/14689 ,  H01L27/14812 ,  H01L27/14831 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/035236 ,  H01L31/1113

摘要： A semiconductor device is provided that includes an array of imaging cells realized from a plurality of layers formed on a substrate, wherein the plurality of layers includes at least one modulation doped quantum well structure spaced from at least one quantum dot structure. Each respective imaging cell includes an imaging region spaced from a corresponding charge storage region. The at least one quantum dot structure of the imaging region generates photocurrent arising from absorption of incident electromagnetic radiation. The at least one modulation doped quantum well structure defines a buried channel for lateral transfer of the photocurrent for charge accumulation in the charge storage region and output therefrom. The at least one modulation doped quantum well structure and the at least one quantum dot structure of each imaging cell can be disposed within a resonant cavity that receives the incident electromagnetic radiation or below a structured metal film having a periodic array of holes.

摘要翻译： 提供一种半导体器件，其包括由形成在衬底上的多个层实现的成像单元的阵列，其中所述多个层包括与至少一个量子点结构间隔开的至少一个调制掺杂量子阱结构。 每个相应的成像单元包括与对应的电荷存储区域间隔开的成像区域。 成像区域的至少一个量子点结构产生由入射电磁辐射的吸收产生的光电流。 所述至少一个调制掺杂量子阱结构限定了用于横向转移光电流以用于电荷存储区域中的电荷累积并由其输出的掩埋沟道。 每个成像单元的至少一个调制掺杂量子阱结构和至少一个量子点结构可以设置在接收入射电磁辐射的谐振腔内或具有周期性阵列孔的结构化金属膜的下方。

公开(公告)号：US20140050242A1

公开(公告)日：2014-02-20

申请号：US13921311

申请日：2013-06-19

申请人： Geoff W. Taylor

发明人： Geoff W. Taylor

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01S5/34

CPC分类号： H01L29/0688 ,  B82Y10/00 ,  G02B6/125 ,  H01L21/0259 ,  H01L27/144 ,  H01L27/15 ,  H01L29/0665 ,  H01L29/122 ,  H01L29/127 ,  H01L29/155 ,  H01L29/66977 ,  H01L29/7786 ,  H01L31/035218 ,  H01L31/035236 ,  H01L31/18 ,  H01L33/005 ,  H01L33/06 ,  H01S5/026 ,  H01S5/06203 ,  H01S5/18358 ,  H01S5/309 ,  H01S5/34 ,  H01S5/3412

摘要： A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure. A plurality of QD-in-QW structures can be provided to support the processing (emission, absorption, amplification) of electromagnetic radiation of different characteristic wavelengths (such as optical wavelengths in range from 1300 nm to 1550 nm). The device can realize an integrated circuit including a wide variety of devices that process electromagnetic radiation at a characteristic wavelength(s) supported by the QDs of the QD-in-QW structure(s). Other semiconductor devices are also described and claimed.

摘要翻译： 半导体器件包括支撑多个层的衬底，其包括从量子阱（QD-in-QW）结构中的量子点偏移的至少一个调制掺杂量子阱（QW）结构。 调制掺杂QW结构包括通过间隔层与至少一个QW隔开的电荷片。 QD-QW结构将QD嵌入在一个或多个QW中。 QD-QW结构可以包括由势垒层分开的至少一个模板/发射子结构对，模板子结构具有比发射子结构更小的尺寸QD。 可以提供多个QD-in-QW结构以支持不同特征波长（例如1300nm至1550nm范围内的光波长）的电磁辐射的处理（发射，吸收，放大）。 该装置可以实现一种集成电路，该集成电路包括处理由QD-in-QW结构的QD支持的特征波长的电磁辐射的各种各样的装置。 还描述和要求保护其他半导体器件。

公开(公告)号：US07776753B2

公开(公告)日：2010-08-17

申请号：US11360759

申请日：2006-02-23

申请人： Geoff W. Taylor ,  Scott W. Duncan

发明人： Geoff W. Taylor ,  Scott W. Duncan

IPC分类号： H01L21/302

CPC分类号： H01L29/155 ,  H01L21/30612 ,  H01L21/30621 ,  H01L29/0646 ,  H01L29/0653 ,  H01L29/0821 ,  H01L29/0843 ,  H01L29/1004 ,  H01L29/1066 ,  H01L29/1075 ,  H01L29/66318 ,  H01L29/7371 ,  H01L29/74 ,  H01L29/7783 ,  H03K17/79 ,  H03M1/667 ,  H03M1/74 ,  H03M1/808

摘要： A method of fabricating a semiconductor device includes the steps of forming (or providing) a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, and a fourth plurality of layers including a p-type ohmic contact layer. Etch stop layers are used during etching operations when forming contacts to the n-type ohmic contact layer and contacts to the n-type modulation doped quantum well. Preferably, each such etch stop layer is made sufficiently thin to permit current tunneling therethrough during operation of optoelectronic/electronic devices realized from this structure (including heterojunction thyristor devices, n-channel HFET devices, p-channel HFET devices, p-type quantum-well-base bipolar transistor devices, and n-type quantum-well-base bipolar transistor devices). The etch stop layer(s) preferably comprise AlAs that functions as an etch stop during etching by a chlorine-based gas mixture that includes fluorine. The series of layers preferably comprise group III-V materials.

摘要翻译： 制造半导体器件的方法包括以下步骤：形成（或提供）在衬底上形成的一系列层，所述层包括包括n型欧姆接触层，p型调制掺杂量子阱的第一多个层 结构，n型调制掺杂量子阱结构，以及包括p型欧姆接触层的第四多层。 当与n型欧姆接触层形成接触并与n型调制掺杂量子阱接触时，在蚀刻操作期间使用蚀刻停止层。 优选地，每个这样的蚀刻停止层被制成足够薄以允许在从该结构实现的光电子/电子器件的操作期间电流隧穿（包括异质结晶闸管器件，n沟道HFET器件，p沟道HFET器件，p型量子阱器件， 基极双极晶体管器件和n型量子阱基双极晶体管器件）。 蚀刻停止层优选地包括在通过包括氟的氯基气体混合物蚀刻期间用作蚀刻停止的AlAs。 该系列层优选包含III-V族材料。

公开(公告)号：US20100123121A1

公开(公告)日：2010-05-20

申请号：US12050321

申请日：2008-03-18

申请人： Geoff W. Taylor

发明人： Geoff W. Taylor

IPC分类号： H01L29/15 ,  H01L29/744 ,  H03K3/01 ,  H03K17/687

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  G01S3/781 ,  G01S3/784 ,  H01S5/0265

摘要： An array of thyristor detector devices is provided having an epitaxial growth structure with complementary types of modulation doped quantum well interfaces located between a P+ layer and an N+ layer. The thyristor detector devices operate over successive cycles that each include a sequence of two distinct modes: a setup mode and a signal acquisition mode. During the setup mode, the n-type quantum well interface and/or the p-type quantum well interface is(are) substantially emptied of charge. During the signal acquisition mode, photocurrent is generated by the thyristor detector device in response to the absorption of incident electromagnetic radiation therein, which can induce the thyristor detector device to switch from an OFF state to an ON state. The OFF/ON state of the thyristor detector device produces an output digital electrical data that corresponds to the amount of incident radiation absorbed by the thyristor detector device during the signal acquisition mode of the current cycle. In the preferred embodiment, the array of thyristor detector devices is part of a monolithic integrated circuit that includes additional electronic circuitry and/or optical components. Moreover, the array of thyristor detector devices is preferably part of a monolithic integrated circuit for high angular resolution laser irradiation detection.

摘要翻译： 提供了具有位于P +层和N +层之间的具有互补类型的调制掺杂量子阱界面的外延生长结构的晶闸管检测器装置阵列。 晶闸管检测器器件在连续的周期中工作，每个周期包括两个不同模式的顺序：设置模式和信号采集模式。 在设置模式期间，n型量子阱界面和/或p型量子阱界面基本上被清空。 在信号捕获模式期间，响应于其中的入射电磁辐射的吸收，晶闸管检测器装置产生光电流，这可导致晶闸管检测器装置从断开状态切换到接通状态。 晶闸管检测器装置的OFF / ON状态产生对应于在当前周期的信号采集模式期间由晶闸管检测器件吸收的入射辐射量的输出数字电数据。 在优选实施例中，晶闸管检测器装置阵列是包括附加电子电路和/或光学部件的单片集成电路的一部分。 此外，晶闸管检测器装置的阵列优选地是用于高角度分辨率激光照射检测的单片集成电路的一部分。

公开(公告)号：US07551826B2

公开(公告)日：2009-06-23

申请号：US11768236

申请日：2007-06-26

申请人： Geoff W. Taylor

发明人： Geoff W. Taylor

IPC分类号： G02B6/10

CPC分类号： H01L31/105 ,  G02B6/1228 ,  G02B6/124 ,  H01L31/1113 ,  H01S5/0261 ,  H01S5/06203 ,  H01S5/0655 ,  H01S5/1014 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/18308 ,  H01S5/18358 ,  H01S5/2004 ,  H01S5/2027 ,  H01S5/3004 ,  H01S5/3211

摘要： An integrated circuit is provided with a photonic device and a spot-size converter waveguide device integrated on a common substrate. The spot-size converter waveguide device provides for transformation between a larger spot-size and a smaller spot-size corresponding to the photonic device. The spot-size converter waveguide device includes at least one of a bottom mirror and top mirror, which provide highly-reflective lower and upper cladding, respectively, for vertical confinement of light propagating through the waveguide device. The top mirror overlies opposing sidewalls of the spot-converter waveguide device, which provide highly-reflective sidewall cladding for lateral confinement of light propagating through the waveguide device. Advantageously, the highly-reflective lower cladding provided by the bottom mirror limits optical loss of the waveguide device. Similarly, the highly-reflective upper cladding and sidewall cladding provided by the top mirror limits optical loss of the waveguide device.

摘要翻译： 集成电路设置有集成在公共基板上的光子器件和点尺寸转换器波导器件。 点尺寸转换器波导器件提供了对应于光子器件的较大光斑尺寸和较小光斑尺寸之间的变换。 点尺寸转换器波导器件包括底镜和顶镜中的至少一个，其分别提供高反射的下包层和上包层，用于垂直限制通过波导器件传播的光。 顶部镜子覆盖在点转换器波导器件的相对的侧壁上，其提供用于横向限制通过波导器件传播的光的高反射侧壁包层。 有利的是，由底镜提供的高反射性下层包层限制了波导器件的光损耗。 类似地，由顶镜提供的高反射性上包层和侧壁包层限制了波导器件的光损耗。

公开(公告)号：US07015120B2

公开(公告)日：2006-03-21

申请号：US10340941

申请日：2003-01-13

申请人： Geoff W. Taylor ,  Scott W. Duncan

发明人： Geoff W. Taylor ,  Scott W. Duncan

IPC分类号： H01L21/20

CPC分类号： H01L29/155 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/802 ,  H03K17/79 ,  H03M1/667 ,  H03M1/74 ,  H03M1/808

摘要： A method of fabricating a semiconductor device includes the steps of forming (or providing) a series of layers formed on a substrate, the layers including a first plurality of layers including an n-type ohmic contact layer, a p-type modulation doped quantum well structure, an n-type modulation doped quantum well structure, and a fourth plurality of layers including a p-type ohmic contact layer. Etch stop layers are used during etching operations when forming contacts to the n-type ohmic contact layer and contacts to the n-type modulation doped quantum well. Preferably, each such etch stop layer is made sufficiently thin to permit current tunneling therethrough during operation of optoelectronic/electronic devices realized from this structure (including heterojunction thyristor devices, n-channel HFET devices, p-channel HFET devices, p-type quantum-well-base bipolar transistor devices, and n-type quantum-well-base bipolar transistor devices). The etch stop layer(s) preferably comprise AlAs that functions as an etch stop during etching by a chlorine-based gas mixture that includes fluorine. The series of layers preferably comprise group III–V materials.

公开(公告)号：US06870207B2

公开(公告)日：2005-03-22

申请号：US09556285

申请日：2000-04-24

申请人： Geoff W Taylor

发明人： Geoff W Taylor

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L31/0304 ,  H01L31/0352 ,  H01L29/765

CPC分类号： B82Y20/00 ,  H01L27/14652 ,  H01L27/14806 ,  H01L31/0304 ,  H01L31/035236 ,  Y02E10/544

摘要： A photon detector is obtained by using the intersubband absorption mechanism in a modulation doped quantum well(s). The modulation doping creates a very high electric field in the well which enables absorption of input TE polarized light and also conducts the carriers emitted from the well into the modulation doped layer from where they may recombine with carriers from the gate contact. Carriers are resupplied to the well by the generation of electrons across the energy gap of the quantum well material. The absorption is enhanced by the use of a resonant cavity in which the quantum well(s) are placed. The absorption and emission from the well creates a deficiency of charge in the quantum well proportional to the intensity of the input photon signal. The quantity of charge in the quantum well of each detector is converted to an output voltage by transferring the charge to the gate of an output amplifier. The detectors are arranged in the form of a 2D array with an output amplifier associated with the entire array or a row of the array as in the known charge coupled devices, or a separate amplifier could be dedicated to each pixel as in the known architecture of the active pixel device. This detector has the unique advantage of near room temperature operation because the dark current is limited to the generation across the semiconductor bandgap and not the emission over the quantum well barrier. The detector also has the advantage that the readout circuitry is implemented monolithically by the HFETs formed in the GaAs substrate simultaneously, with the detecting elements.

摘要翻译： 通过在调制掺杂量子阱中使用子带间吸收机制获得光子检测器。 调制掺杂在阱中产生非常高的电场，其能够吸收输入TE偏振光，并且还将从阱发射的载流子传导到调制掺杂层，从那里它们可能与栅极接触的载流子重新组合。 载流子通过在量子阱材料的能隙上产生电子而重新供给阱。 通过使用其中放置量子阱的谐振腔来增强吸收。 来自井的吸收和发射在量子阱中产生与输入光子信号的强度成比例的电荷的不足。 通过将电荷转移到输出放大器的栅极，每个检测器的量子阱中的电荷量被转换成输出电压。 检测器以2D阵列的形式布置，其中输出放大器与已知电荷耦合器件中的整个阵列或阵列相关联，或者单独的放大器可专用于每个像素，如在已知的结构 有源像素装置。 该检测器具有接近室温操作的独特优点，因为暗电流被限制在半导体带隙上的产生，而不是量子阱屏障上的发射。 该检测器还具有以下优点：读出电路通过与GaAs元件同时形成的HFET与检测元件一体地实现。

公开(公告)号：US4328511A

公开(公告)日：1982-05-04

申请号：US102062

申请日：1979-12-10

申请人： Al F. Tasch, Jr. ,  Geoff W. Taylor ,  Pallab K. Chatterjee

发明人： Al F. Tasch, Jr. ,  Geoff W. Taylor ,  Pallab K. Chatterjee

IPC分类号： G11C11/34 ,  H01L27/108 ,  H01L29/808 ,  H01L27/02 ,  H01L29/80

CPC分类号： H01L29/808 ,  G11C11/34 ,  H01L27/108

摘要： The present invention is embodied in a dynamic random access memory (RAM) cell comprising a depletion mode field effect transistor structure with a p-n junction "gate" electrode. The cell can be programmed to two threshold voltage states providing constant current sensing. Cell programming is by application of appropriate signals to the transistor "gate" electrode and source. Reading is accomplished by sensing current through the transistor while the source is grounded. An intermediate voltage on the "gate" electrode prevents changes in the state of the cell.

摘要翻译： 本发明体现在具有p-n结“栅极”电极的耗尽型场效应晶体管结构的动态随机存取存储器（RAM）单元中。 电池可以编程为提供恒定电流检测的两个阈值电压状态。 电池编程是通过向晶体管“栅极”电极和源施加适当的信号。 通过在源极接地时感应通过晶体管的电流来实现读取。 “栅极”电极上的中间电压防止电池状态的变化。

公开(公告)号：US11520014B2

公开(公告)日：2022-12-06

申请号：US16619929

申请日：2018-06-07

申请人： Geoff W. Taylor

发明人： Geoff W. Taylor

IPC分类号： G01C3/08 ,  G01S7/481 ,  G01S17/894 ,  G01S7/4863 ,  G01S7/4865 ,  G01S17/42

摘要： An optoelectronic integrated circuit is provided for use in a LIDAR system that includes a light source that is configured to emit an optical TOF pulse for reflection by an object. The integrated circuit includes an array of pixel elements arranged in columns and rows with at least one column line for each column of pixel elements. Each pixel element includes a vertical cavity thyristor device and a capacitor that are configured such that the capacitor generates a measured voltage signal corresponding to TOF of the optical TOF pulse that returns from the object. The measured voltage signal is transferred to the at least one column line for the pixel element in order to determine depth of the object. Switching action of the thyristor device due to absorption of light of the TOF return pulse can be configured to interrupt a charge integration function of the capacitor such that the capacitor generates the measured voltage signal corresponding to TOF of the optical TOF pulse. Other embodiments are provided that employ the thyristor devices of the pixel elements of spatial imaging of the object.

公开(公告)号：US09188798B2

公开(公告)日：2015-11-17

申请号：US14238649

申请日：2012-08-17

申请人： Geoff W. Taylor

发明人： Geoff W. Taylor

IPC分类号： G02F1/035 ,  G02F1/017 ,  G02B6/12 ,  G02B6/293 ,  G02B6/124 ,  G02B6/125 ,  H01L45/00 ,  B82Y20/00 ,  G02F1/015

CPC分类号： G02F1/01708 ,  B82Y20/00 ,  G02B6/12007 ,  G02B6/124 ,  G02B6/125 ,  G02B6/131 ,  G02B6/1347 ,  G02B6/29338 ,  G02B6/3536 ,  G02F2001/0151 ,  G02F2001/0154 ,  H01L45/06 ,  Y10S977/755

摘要： A monolithic semiconductor device that includes a waveguide structure optically coupled to an optical resonator. The optical resonator is adapted to process light at a predetermined wavelength. The optical resonator includes a closed loop waveguide having a plurality of straight sections that are optically coupled together by bend sections.

摘要翻译： 一种单片半导体器件，包括光耦合到光学谐振器的波导结构。 光谐振器适于处理预定波长的光。 光学谐振器包括具有通过弯曲部分光学耦合在一起的多个直线部分的闭环波导。