利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

21 条记录 (耗时 0.018 秒)

    APPLICATIONS OF SEMICONDUCTOR NANO-SIZED PARTICLES FOR PHOTOLITHOGRAPHY
    15.
    发明申请
    APPLICATIONS OF SEMICONDUCTOR NANO-SIZED PARTICLES FOR PHOTOLITHOGRAPHY 审中-公开
    半导体纳米尺寸颗粒的应用于光刻机

    公开(公告)号：US20110281221A1

    公开(公告)日：2011-11-17

    申请号：US13189143

    申请日：2011-07-22

    申请人： Zhiyun Chen ,  Erin F. Fleet ,  Gregory D. Cooper

    发明人： Zhiyun Chen ,  Erin F. Fleet ,  Gregory D. Cooper

    IPC分类号： G03F7/26 ,  B82Y30/00

    CPC分类号： G03F7/2041 ,  B82Y30/00 ,  G03F1/62 ,  G03F7/004 ,  G03F7/091 ,  G03F7/2002

    摘要： Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.

    摘要翻译： 半导体纳米尺寸颗粒具有独特的光学性质，使其成为UV光刻技术中各种应用的理想选择。 在该专利中，描述了包括在浸没式光刻中使用半导体纳米尺寸颗粒或含半导体纳米尺寸颗粒的材料作为高折射介质的几种这样的应用，作为光学中的抗反射涂层，光刻中的防护薄膜和在UV光致抗蚀剂中的敏化剂 。

    Programmable photolithographic mask system and method
    16.
    发明授权
    Programmable photolithographic mask system and method 失效

    公开(公告)号：US06600551B2

    公开(公告)日：2003-07-29

    申请号：US10166615

    申请日：2002-06-12

    申请人： Gregory D. Cooper ,  Richard M. Mohring

    发明人： Gregory D. Cooper ,  Richard M. Mohring

    IPC分类号： G03B2742

    CPC分类号： G03F7/70375 ,  G03F7/70291

    摘要： The present invention overcomes many of the disadvantages of prior lithographic microfabrication processes while providing further improvements that can significantly enhance the ability to make more complicated semiconductor chips at lower cost. A new type of programmable structure for exposing a wafer allows the lithographic pattern to be changed under electronic control. This provides great flexibility, increasing the throughput and decreasing the cost of chip manufacture and providing numerous other advantages. The programmable structure consists of an array of shutters that can be programmed to either transmit light to the wafer (referred to as its “open” state) or not transmit light to the wafer (referred to as its “closed” state). The programmable structure can comprise or include an array of selective amplifiers. Thus, each selective amplifier is programmed to either amplify light (somewhat analogous to the “open” or “transparent” state of a shutter) or be “non-amplifying” (its “closed” or “opaque” state). In the non-amplifying state, some portion of the incident light is transmitted through the amplifier material. The shutters and selective amplifiers can work in tandem to form a “programmable layer”. A programmable technique is provided for creating a pattern to be imaged onto a wafer that can be implemented as a viable production technique. Thus, the present invention also provides a technique of making integrated circuits. A diffraction limiter can be used to provide certain advantages associated with contact lithography without requiring some of the disadvantages of contact lithography.

    Method and apparatus for exposing photoresists using programmable masks
    20.
    发明授权
    Method and apparatus for exposing photoresists using programmable masks 失效
    使用可编程掩模曝光光刻胶的方法和装置

    公开(公告)号：US06879376B2

    公开(公告)日：2005-04-12

    申请号：US10298224

    申请日：2002-11-18

    申请人： Andrew Case ,  Gregory D. Cooper ,  Erin Fleet

    发明人： Andrew Case ,  Gregory D. Cooper ,  Erin Fleet

    IPC分类号： G03F7/20 ,  G03B27/42 ,  G03B27/32 ,  G03B27/54 ,  G03C5/00

    CPC分类号： G03F7/70466 ,  G03F7/70291

    摘要： Method and apparatus for exposing photo resists using programmable masks increases imaging resolution to provide fully dense integrated circuit patterns made of very small features on photoresist-coated silicon wafers by optical lithography. Small features are created by means of overlap exposure with either programmable or conventional masks. Blocking photoresists responding differently to two different wavelengths of light, two-color photoresists requiring two wavelengths of light to change solubility, and two-photon photoresists which change solubility only by absorbing two photons at a time may be used.

    摘要翻译： 使用可编程掩模曝光光致抗蚀剂的方法和装置增加了成像分辨率，以通过光学平版印刷法在光致抗蚀剂涂覆的硅晶片上提供由非常小的特征构成的全密集的集成电路图案。 通过可编程或常规掩模的重叠曝光创建小特征。 可以使用阻挡对两种不同波长的光的不同波长的光刻胶，可以使用需要两个波长的光以改变溶解度的双色光致抗蚀剂，并且可以一次通过吸收两个光子而改变溶解度的双光子光致抗蚀剂。