Semiconductor Light Emitting Diode
    11.
    发明申请
    Semiconductor Light Emitting Diode 有权
    半导体发光二极管

    公开(公告)号:US20090001401A1

    公开(公告)日:2009-01-01

    申请号:US10572486

    申请日:2005-08-05

    IPC分类号: H01L33/00

    CPC分类号: H01L33/38

    摘要: Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode.

    摘要翻译: 提供一种半导体发光二极管,其中在上掺杂层或发光层的表面上形成多个上电极,并且在下掺杂层或基板的表面上形成至少一个下电极 硅基发光二极管或氮化物基发光二极管,以增强施加到电极的电流的扩展特性,从而使发射层的发射面积最大化并且在发射的整个表面上诱发具有均匀强度的发射 层以进一步提高发光二极管的发光效率。

    Laser deposition apparatus for depositing a large area oxide thin film
on a substrate
    12.
    发明授权
    Laser deposition apparatus for depositing a large area oxide thin film on a substrate 失效
    用于在基板上沉积大面积氧化物薄膜的激光沉积设备

    公开(公告)号:US5820682A

    公开(公告)日:1998-10-13

    申请号:US965765

    申请日:1997-11-07

    CPC分类号: C23C14/28

    摘要: A laser deposition apparatus for a large area oxide thin film which can enable thin films of a large area to be deposited by varying a target affixing method when performing a pulse laser deposition which most effectively deposits various oxide thin films of a complex chemical composition. The apparatus in accordance with the present invention comprises a tilted target affixed to a rotatable target plate by a target frame such that the target is tilted with respect to the target plate; a substrate heater on which the substrate can be mounted and which can be rotated on its own axis; and an eximer laser installed within a vacuum chamber for irradiating a laser beam to said tilted target.

    摘要翻译: 一种用于大面积氧化物薄膜的激光沉积设备,当进行最有效地沉积复杂化学成分的各种氧化物薄膜的脉冲激光沉积时,可以通过改变目标固定方法来沉积大面积的薄膜。 根据本发明的装置包括通过目标框架固定到可旋转靶板的倾斜目标,使得目标物相对于目标板倾斜; 基板加热器,基板可以在其上安装并且可以在其自身轴线上旋转; 以及安置在真空室内的准分子激光器,用于将激光束照射到所述倾斜靶。

    Superconductor-insulator-superconductor Josephson tunnel junction and
method therefor
    13.
    发明授权
    Superconductor-insulator-superconductor Josephson tunnel junction and method therefor 失效
    超导体 - 绝缘体 - 超导体约瑟夫逊隧道结及其方法

    公开(公告)号:US5801393A

    公开(公告)日:1998-09-01

    申请号:US840070

    申请日:1997-04-24

    IPC分类号: H01L39/22 H01L39/24 H01L29/06

    摘要: A superconductor-insulator-superconductor Josephson tunnel junction, comprising: a single crystalline substrate having a perovskite crystal structure; a template layer formed of a b-axis oriented PBCO thin film on the substrate; and a trilayer structure consisting of a lower electrode, a barrier layer and an upper electrode, which serve as a superconductor, an insulator and a superconductor, respectively, the lower electrode and the upper electrode each being formed of an a-axis oriented YBCO superconducting thin film and having an oblique junction edge at an angle of 30.degree. to 70.degree., the barrier layer being formed of an insulating thin film between the two superconducting electrodes, can be operated at a low power with an exceptional speed in calculation and data processing.

    摘要翻译: 超导体 - 绝缘体 - 超导体约瑟夫逊隧道结,包括:具有钙钛矿晶体结构的单晶衬底; 在基板上由b轴取向的PBCO薄膜形成的模板层; 以及分别由用作超导体,绝缘体和超导体的下电极,阻挡层和上电极组成的三层结构,所述下电极和上电极各自由a轴取向的YBCO超导体 薄膜,并且在30°至70°的角度具有倾斜的接合边缘,阻挡层由两个超导电极之间的绝缘薄膜形成,可以在计算和数据处理中以非常高的速度以低功率运行 。

    Measurement device equipped with device for deciding measurement start point
    15.
    发明授权
    Measurement device equipped with device for deciding measurement start point 有权
    测量装置配备了用于决定测量起点的装置

    公开(公告)号:US08228502B2

    公开(公告)日:2012-07-24

    申请号:US12545170

    申请日:2009-08-21

    IPC分类号: G01J3/28

    摘要: Provided is a measurement device. The measurement device includes a sensor, a wavelength-tunable light source, an additional light source, a coupler, and an optical power measurer. The sensor accepts a sample. The wavelength-tunable light source irradiates wavelength-tunable light to detect a reaction of the sensor. The additional light source irradiates wavelength-fixed light to detect an initial time of the reaction. The coupler combines the wavelength-tunable light source and the additional light source and irradiates the combined input light on the sensor. The optical power measurer detects the reaction of the sensor from an output light transmitted through or reflected by the sensor.

    摘要翻译: 提供了一种测量装置。 测量装置包括传感器,波长可调光源,附加光源,耦合器和光功率测量器。 传感器接受样品。 波长可调光源照射波长可调光以检测传感器的反应。 附加的光源照射波长固定的光以检测反应的初始时间。 耦合器将波长可调光源和附加光源相结合,并将传感器上的组合输入光照射。 光功率测量器检测传感器从传感器传输或反射的输出光的反应。

    METHOD AND APPARATUS FOR MEASURING ISOELECTRIC POINT USING FIELD EFFECT TRANSISTOR
    17.
    发明申请
    METHOD AND APPARATUS FOR MEASURING ISOELECTRIC POINT USING FIELD EFFECT TRANSISTOR 失效
    使用场效应晶体管测量电压点的方法和装置

    公开(公告)号:US20110139637A1

    公开(公告)日:2011-06-16

    申请号:US13058120

    申请日:2008-12-16

    IPC分类号: G01N27/403 G01N27/414

    CPC分类号: G01N27/4145

    摘要: Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining as the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.

    摘要翻译: 提供了使用场效应晶体管测量等电点的方法和装置。 该方法包括提供场效应晶体管,该场效应晶体管包括衬底,设置在衬底上的源电极和漏极彼此间隔开的沟道区,以及在源电极和漏电极之间的沟道区域,提供具有第一浓度到沟道的第一电解质溶液 区域,并且测量源极和漏极之间的沟道区的第一电流值,提供具有大于第一浓度的第二浓度的第二电解质溶液,并测量源极之间的沟道区的第二电流值 和漏电极,并且使用第一和第二电流值之间的差来确定场效应晶体管的等电点或设置在场效应晶体管上的材料。

    BIOCHIP AND METHOD OF DETECTING REACTION FROM THE SAME
    18.
    发明申请
    BIOCHIP AND METHOD OF DETECTING REACTION FROM THE SAME 审中-公开
    检测反应物的生物学和方法

    公开(公告)号:US20110091905A1

    公开(公告)日:2011-04-21

    申请号:US12893166

    申请日:2010-09-29

    CPC分类号: G01N33/5302 G01N21/31

    摘要: Provided are a biochip and a method of detecting a reaction from the biochip. This method includes preparing a first mixture solution of polyvinylpyrrolidone (PVP) and a sample including target molecules, measuring absorbance or transmittance of the first mixture solution, preparing a second mixture solution including the PVP, the sample, and a receptor of the target molecules, measuring absorbance or transmittance of the second mixture solution, and calculating an absorbance or transmittance difference between the first mixture solution and the second mixture solution. Thus, it is possible to reduce the production cost of the biochip by inducing a reaction of an antigen and an antibody using PVP. Further, it is possible to detect an accurate quantity of the antigen by analyzing a quantity of antigen on the basis of the absorbance or transmittance difference.

    摘要翻译: 提供了一种生物芯片和从生物芯片检测反应的方法。 该方法包括制备聚乙烯吡咯烷酮(PVP)的第一混合溶液和包含靶分子的样品,测量第一混合溶液的吸光度或透射率,制备包含PVP,样品和靶分子的受体的第二混合溶液, 测量第二混合溶液的吸光度或透射率,并计算第一混合溶液和第二混合溶液之间的吸光度或透射率差异。 因此,通过使用PVP诱导抗原和抗体的反应,可以降低生物芯片的生产成本。 此外,可以通过基于吸光度或透射率差异分析抗原量来检测精确量的抗原。

    BIOSENSOR AND METHOD OF DRIVING THE SAME
    19.
    发明申请
    BIOSENSOR AND METHOD OF DRIVING THE SAME 失效
    生物传感器及其驱动方法

    公开(公告)号:US20110068015A1

    公开(公告)日:2011-03-24

    申请号:US12703939

    申请日:2010-02-11

    IPC分类号: G01N27/26 G01F1/64

    CPC分类号: G01N27/4145

    摘要: Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device. Also, the probe molecules are formed on the reference electrode to measure a change in threshold voltage according to a change in electric potential between the reference electrode and the gate insulating layer, such that the sensitivity and reaction rate can be remarkably improved.

    摘要翻译: 提供了一种生物传感器及其驱动方法。 生物传感器包括晶体管,其包括基板,该基板包括源极,漏极和形成在源极和漏极之间的沟道,形成在沟道上的栅极绝缘层以及分别与源极和漏极连接的源极和漏极 漏极,用于覆盖晶体管的流体线,其与晶体管一起具有内部空间,并且其中包含目标分子的样品溶液流动,形成在流体管线的内壁上的参考电极和附着在该流体管线上的探针分子层 参考电极并与靶分子反应。 因此,参考电极形成在流体管线的内壁上,使生物装置能够小型化。 此外,探针分子形成在参考电极上,以根据参考电极和栅极绝缘层之间的电位的变化来测量阈值电压的变化,从而可以显着提高灵敏度和反应速率。