公开(公告)号：US08837885B2

公开(公告)日：2014-09-16

申请号：US13615225

申请日：2012-09-13

Applicant: Hong Seok Seo ,  Bong Je Park ,  Joon Tae Ahn ,  Jung-Ho Song

Inventor： Hong Seok Seo ,  Bong Je Park ,  Joon Tae Ahn ,  Jung-Ho Song

IPC: G02B6/26 ,  G02B6/42

CPC classification number: G02B6/2821 ,  G02B6/2808 ,  G02B6/29317 ,  H01S3/06741 ,  H01S3/06745 ,  H01S3/094007 ,  H01S3/094019 ,  H01S3/1603

Abstract: The inventive concept provides optic couplers, optical fiber laser devices, and active optical modules using the same. The optic coupler may include a first optical fiber having a first core and a first cladding surrounding the first core, a second optical fiber having a second core transmitting a signal light to the first optical fiber and a third cladding surrounding the second core, third optical fibers transmitting pump-light to the first optical fiber in a direction parallel to the second optical fiber; and a connector connected between the first optical fiber and the second optical fiber, the connector extending the third optical fibers disposed around the second optical fiber toward the first optical fiber, the connector comprising a third core connected between the first core and the second core and a fifth cladding surrounding the third core.

Abstract translation: 本发明的概念提供光耦合器，光纤激光器件以及使用其的有源光学模块。 光耦合器可以包括具有第一芯和围绕第一芯的第一包层的第一光纤，具有向第一光纤传输信号光的第二芯和包围第二芯的第三包层的第二光纤，第三光纤 纤维在平行于第二光纤的方向上将泵浦光传输到第一光纤; 以及连接在所述第一光纤与所述第二光纤之间的连接器，所述连接器将设置在所述第二光纤周围的所述第三光纤朝向所述第一光纤延伸，所述连接器包括连接在所述第一芯和所述第二芯之间的第三芯， 围绕第三核心的第五包层。

公开(公告)号：US20130128662A1

公开(公告)日：2013-05-23

申请号：US13598892

申请日：2012-08-30

Applicant: JUNG-HO SONG ,  JIN-YUB LEE ,  JAE-WOO IM ,  SEUNG-JAE LEE ,  SANG-SO PARK

Inventor： JUNG-HO SONG ,  JIN-YUB LEE ,  JAE-WOO IM ,  SEUNG-JAE LEE ,  SANG-SO PARK

IPC: G11C16/04 ,  G11C16/26

CPC classification number: G11C11/56 ,  G11C11/5642 ,  G11C16/04 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3404 ,  G11C2211/56

Abstract: A method is provided for reading data in a nonvolatile memory device. The method includes performing a first read operation on multiple multi-level memory cells (MLCs), performing a first sensing operation on at least one flag cell corresponding to the MLCs, selectively performing a second read operation on the MLCs based on a result of the first sensing operation, and performing a second sensing operation on the at least one flag cell when the second read operation is performed. Read data is output based on results of the first read operation and the first sensing operation when the second read operation is not performed, and the read data is output based on result of the first read operation, the first sensing operation, the second read operation and the second sensing operation when the second read operation is performed. The read data corresponds to programmed data in the MLCs.

Abstract translation: 提供了一种用于在非易失性存储器件中读取数据的方法。 该方法包括对多个多级存储器单元（MLC）执行第一读取操作，对与MLC相对应的至少一个标志单元执行第一感测操作，基于MLC的结果选择性地执行第二读取操作 第一感测操作，并且当执行第二读取操作时对所述至少一个标志单元执行第二感测操作。 在不执行第二读取操作时，基于第一读取操作和第一感测操作的结果输出读取数据，并且基于第一读取操作，第一感测操作，第二读取操作的结果来输出读取数据 以及执行第二读取操作时的第二感测操作。 读取数据对应于MLC中的编程数据。

公开(公告)号：US08054692B2

公开(公告)日：2011-11-08

申请号：US12472639

申请日：2009-05-27

Applicant: Sang-gu Kang ,  Hee-Won Lee ,  Ju-Seok Lee ,  Jung-Ho Song

Inventor： Sang-gu Kang ,  Hee-Won Lee ,  Ju-Seok Lee ,  Jung-Ho Song

IPC: G11C11/34 ,  G11C16/06

CPC classification number: G11C7/02 ,  G11C7/1048 ,  G11C11/5628 ,  G11C16/0483 ,  G11C2211/5621 ,  G11C2211/5642

Abstract: A flash memory device controls a common source line voltage and performs a program verify method. A plurality of memory cells is connected between a bit line and the common source line. A data input/output circuit is connected to the bit line and is configured to store data to be programmed in a selected memory cell of the plurality of memory cells. The data input/output circuit maintains data to be programmed within the data input/output circuit during a program verify operation, and decreases noise in the common source line by selectively precharging the bit line based on the data to be programmed.

Abstract translation: 闪存器件控制公共源极线电压并执行程序验证方法。 多个存储单元连接在位线和公共源极线之间。 数据输入/输出电路连接到位线，并且被配置为存储要编程在多个存储器单元的所选存储单元中的数据。 数据输入/输出电路在编程验证操作期间保持在数据输入/输出电路内编程的数据，并且通过基于要编程的数据选择性地预充电位线来降低公共源极线中的噪声。

公开(公告)号：US20100220535A1

公开(公告)日：2010-09-02

申请号：US12713219

申请日：2010-02-26

Applicant: Sang-Gu Kang ,  Hee-Won Lee ,  Ju-Seok Lee ,  Jung-Ho Song

Inventor： Sang-Gu Kang ,  Hee-Won Lee ,  Ju-Seok Lee ,  Jung-Ho Song

IPC: G11C5/14 ,  G11C7/00

CPC classification number: G11C7/12 ,  G11C5/147 ,  G11C16/24 ,  G11C2207/005

Abstract: A non-volatile memory device includes a feedback circuit and a precharge switching transistor. The feedback circuit generates a feedback signal based on a voltage level of a bitline during a precharge operation. The precharge switching transistor, in response to the feedback signal, controls a precharge current for precharging the bitline. The speed of the precharge operation may be increased and/or mismatch of the bias signals in precharging a plurality of bitlines may be reduced.

Abstract translation: 非易失性存储器件包括反馈电路和预充电开关晶体管。 反馈电路在预充电操作期间基于位线的电压电平产生反馈信号。 响应于反馈信号，预充电开关晶体管控制用于预充电位线的预充电电流。 可以增加预充电操作的速度和/或可以减少对多个位线进行预充电的偏置信号的失配。

公开(公告)号：US20100142579A1

公开(公告)日：2010-06-10

申请号：US12499069

申请日：2009-07-07

Applicant: Young Ahn LEEM ,  Jung-Ho SONG ,  Kisoo KIM ,  Gyungock KIM

Inventor： Young Ahn LEEM ,  Jung-Ho SONG ,  Kisoo KIM ,  Gyungock KIM

IPC: H01S3/08 ,  H01S5/00

CPC classification number: H01S5/026 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0655 ,  H01S5/1014 ,  H01S5/1025 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/125

Abstract: Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide.

Abstract translation: 提供了一种混合激光二极管的谐振器。 谐振器包括：包括混合波导，多模波导和单模波导串联连接的半导体层的基板; 复合半导体波导，设置在半导体层的混合波导上，在化合物半导体波导的一端具有锥形耦合结构，锥形耦合结构部分地与多模波导重叠; 以及设置在单模波导的一端的反射部。 多模波导具有比混合波导窄的宽度，并且单模波导具有比多模波导窄的宽度。

公开(公告)号：US20100081225A1

公开(公告)日：2010-04-01

申请号：US12517357

申请日：2007-10-16

Applicant: Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

Inventor： Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

IPC: H01L33/30 ,  B05C11/00 ,  H01L21/20

CPC classification number: H01L21/02543 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02639

Abstract: Provided is a mask pattern for selective area growth of a semiconductor layer and a selective area growth method for a semiconductor layer for independently controlling a growth rate and a strain of the semiconductor layer. The selective area growth method includes: forming a plurality of pairs of first mask patterns, the first mask patterns in each pair including a first open area therebetween, the first open area having a width that is wider than a distance causing overgrowth of the semiconductor layer, the pairs of the first mask patterns repeatedly arranged with a period P therebetween; wherein controlling a growth rate and a strain of the semiconductor layer formed on the first open area by adjusting the period P.

Abstract translation: 提供了用于半导体层的选择性区域生长的掩模图案和用于独立地控制半导体层的生长速率和应变的半导体层的选择区域生长方法。 选择区域生长方法包括：形成多对第一掩模图案，每对中的第一掩模图案包括其间的第一开口区域，第一开口区域的宽度比导致半导体层过度生长的距离宽 ，所述第一掩模图案对以其间的周期P重复布置; 其中通过调整周期P来控制形成在第一开放区域上的半导体层的生长速率和应变。

公开(公告)号：US20160055919A1

公开(公告)日：2016-02-25

申请号：US14668043

申请日：2015-03-25

Applicant: ILHAN PARK ,  JI-SUK KIM ,  JUNG-HO SONG ,  YANG-LO AHN

Inventor： ILHAN PARK ,  JI-SUK KIM ,  JUNG-HO SONG ,  YANG-LO AHN

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/10

CPC classification number: G11C16/3459 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C2211/5621

Abstract: A program verification method is for a nonvolatile memory device which programs a plurality of memory cells. The program verification method includes applying a plurality of verification voltages, and determining whether programming of memory cells, having different target threshold voltage distributions, from among the plurality of memory cells is completed based on one of the plurality of verification voltages.

Abstract translation: 程序验证方法是用于对多个存储器单元进行编程的非易失性存储器件。 程序验证方法包括应用多个验证电压，并且基于多个验证电压中的一个来确定具有不同目标阈值电压分布的存储单元的编程是否从多个存储单元中的一个完成。

公开(公告)号：US20110141758A1

公开(公告)日：2011-06-16

申请号：US12949447

申请日：2010-11-18

Applicant: Hong-Seok SEO ,  Joon Tae Ahn ,  Bong Je Park ,  Dae Kon Oh ,  Jung-Ho Song

Inventor： Hong-Seok SEO ,  Joon Tae Ahn ,  Bong Je Park ,  Dae Kon Oh ,  Jung-Ho Song

IPC: H01S3/00 ,  G02B6/26

CPC classification number: H01S3/094019 ,  G02B6/4214 ,  H01S3/0675 ,  H01S3/094007 ,  H01S3/0941 ,  H01S3/11

Abstract: Provided are an optical coupler, which can improve miniaturization and integration, and an active optical module comprising the same. The optical coupler comprises a hollow optical block having a through hole formed to pass an optical fiber therethrough. The hollow optical block comprises at least one incidence plane, at least one internal reflection plane, and at least one tapering region. The incidence plane is disposed at the bottom of the hollow optical block, which is parallel to the through hole, to incident-transmit light. The internal reflection plane is disposed at the top of the hollow optical block, which is opposite to the incidence plane, to reflect the light, which is received from the incidence plane, into the hollow optical block. The tapering region is configured to concentrate the light on the optical fiber in the through hole. The tapering region is formed such that the outer diameter of the hollow optical block decreases away from the internal reflection plane and the incidence plane.

Abstract translation: 提供了可以改善小型化和集成的光耦合器，以及包括该光耦合器的有源光学模块。 光耦合器包括中空的光学块，该中空光学块具有形成为使光纤通过的通孔。 中空光学块包括至少一个入射平面，至少一个内部反射平面和至少一个锥形区域。 入射平面设置在平行于通孔的中空光学块的底部入射透射光。 内反射面设置在与入射面相反的中空光学块的顶部，以将从入射平面接收的光反射到中空光学块中。 锥形区域被配置为将光聚集在通孔中的光纤上。 锥形区域形成为使得中空光学块的外径从内反射面和入射面减小。

公开(公告)号：US07221671B2

公开(公告)日：2007-05-22

申请号：US09901486

申请日：2001-07-10

Applicant: Min-Seop Jeong ,  Jung-Ho Song

Inventor： Min-Seop Jeong ,  Jung-Ho Song

IPC: H04L12/66

CPC classification number: H04L61/2514 ,  H04L29/12009 ,  H04L29/12367 ,  H04L29/12377 ,  H04L29/12924 ,  H04L61/2517 ,  H04L61/6063

Abstract: A system for accessing a node of a private network includes an assigning portion for assigning external port values to respective network nodes based on information collected from the network nodes of the private network, and storing the assigned external port values; an exchanging portion for exchanging the external port values of the respective network nodes of private networks; and an address converting portion for converting the external port values into corresponding private IP addresses and internal port values when a network node of one private network accesses another network node of another private network by using the external port values of another network node of another private network. Accordingly, a network node of a private network without a global IP address becomes accessible.

Abstract translation: 用于访问私有网络的节点的系统包括：分配部分，用于基于从专用网络的网络节点收集的信息将外部端口值分配给各个网络节点，并存储所分配的外部端口值; 用于交换专用网络的各个网络节点的外部端口值的交换部分; 以及地址转换部分，当一个专用网络的网络节点通过使用另一个专用网络的另一个网络节点的外部端口值来访问另一个专用网络的另一个网络节点时，将外部端口值转换为相应的专用IP地址和内部端口值 。 因此，没有全局IP地址的专用网络的网络节点变得可访问。

公开(公告)号：US06885804B2

公开(公告)日：2005-04-26

申请号：US10280691

申请日：2002-10-25

Applicant: Kyung-hyun Park ,  Jung-ho Song ,  Sung-bock Kim ,  Kwang-ryong Oh

Inventor： Kyung-hyun Park ,  Jung-ho Song ,  Sung-bock Kim ,  Kwang-ryong Oh

IPC: H01L33/00 ,  G02B6/124 ,  H01S5/10 ,  H01S5/12 ,  G02B6/10

CPC classification number: G02B6/124 ,  H01S5/1203 ,  H01S5/1215 ,  H01S5/1231

Abstract: A semiconductor optical device with a differential grating formed by a holography method and a method for manufacturing the same are provided. The provided semiconductor optical device includes an n-type InP substrate, a stack structure on the InP substrate having a waveguide and active layers, a first grating formed under the stack structure and on the InP substrate, and a second grating formed on the stack structure. The provided method for manufacturing the semiconductor optical device forms a first grating on the n-type InP substrate and under the active layer, and forms a second grating on the active layer. The first and second gratings are formed by the holography method.

Abstract translation: 提供了一种通过全息方法形成的差分光栅的半导体光学器件及其制造方法。 所提供的半导体光学器件包括n型InP衬底，在具有波导和有源层的InP衬底上的堆叠结构，在堆叠结构下形成的第一栅极和InP衬底，以及形成在堆叠结构上的第二栅极 。 所提供的半导体光学器件的制造方法在n型InP衬底和有源层下形成第一光栅，并在有源层上形成第二光栅。 第一和第二光栅通过全息方法形成。