公开(公告)号：US07964241B2

公开(公告)日：2011-06-21

申请号：US11892948

申请日：2007-08-28

Applicant: Kazuhide Hasebe ,  Pao-Hwa Chou ,  Kota Umezawa ,  Kentaro Kadonaga ,  Hao-Hsiang Chang

Inventor： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Kota Umezawa ,  Kentaro Kadonaga ,  Hao-Hsiang Chang

IPC: C23C16/00

CPC classification number: C23C16/45525 ,  C03C17/225 ,  C03C2217/281 ,  C03C2217/282 ,  C03C2217/283 ,  C03C2218/152 ,  C23C16/30 ,  C23C16/45542 ,  C23C16/45546 ,  C23C16/45578

Abstract: An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.

Abstract translation: 通过CVD在目标基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体或氮氧化气体的第二工艺气体的工艺领域中，含有硼的第三工艺气体 和含有碳氢化合物气体的第四工艺气体。 第一步骤是在停止供给第二处理气体的第一处理气体和作为第三和第四处理气体之一的前一个气体的供给的同时，提供作为第三和第四处理气体中的另一个的后续气体 。 第二步骤在停止第二处理气体和前一个气体的供给的同时，进行后续气体的供给。 第三步骤在停止供应第一处理气体的同时进行第二处理气体的供应。

公开(公告)号：US07923378B2

公开(公告)日：2011-04-12

申请号：US12320535

申请日：2009-01-28

Applicant: Kazuhide Hasebe ,  Shigeru Nakajima ,  Jun Ogawa

Inventor： Kazuhide Hasebe ,  Shigeru Nakajima ,  Jun Ogawa

IPC: H01L21/00

CPC classification number: C23C16/452 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/31612

Abstract: A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.

Abstract translation: 在目标基板上通过CVD形成含硅绝缘膜，在选择性地供给包含二异丙基氨基硅烷气体的第一工艺气体和包含氧化性气体或氮化气体的第二工艺气体的工艺领域中。 通过交替地执行包括第一和第二步骤的循环的多次来形成膜。 第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。 第二工序气体供给第二工序气体，从而氧化或氮化目标衬底表面上的吸附层。 第二步骤包括通过激励机构激励第二处理气体的第二处理气体供应给处理场的激励周期。

公开(公告)号：US20100319619A1

公开(公告)日：2010-12-23

申请号：US12852692

申请日：2010-08-09

Applicant: Takehiko FUJITA ,  Jun Ogawa ,  Shigeru Nakajima ,  Kazuhide Hasebe

Inventor： Takehiko FUJITA ,  Jun Ogawa ,  Shigeru Nakajima ,  Kazuhide Hasebe

IPC: C23C16/52 ,  C23C16/22

CPC classification number: C30B33/005 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662

Abstract: In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.

Abstract translation: 在半导体工艺的氧化方法中，目标衬底在处理容器的工艺场内沿垂直方向间隔放置。 从处理场的一侧向工艺场供给氧化气体和脱氧气体，同时从另一侧排出气体。 一种或两种氧化气体和脱氧气体被激活。 使氧化气体和脱氧气体相互反应，从而在工艺场内产生氧自由基和羟基自由基。 通过氧自由基和羟基自由基在目标基材的表面进行氧化处理。

公开(公告)号：US20100130015A1

公开(公告)日：2010-05-27

申请号：US12441754

申请日：2008-06-06

Applicant: Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

Inventor： Shigeru Nakajima ,  Kazuhide Hasebe ,  Pao-Hwa Chou ,  Mitsuaki Iwashita ,  Reiji Niino

IPC: H01L21/32

CPC classification number: G03F7/405 ,  G03F7/0035 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32139

Abstract: Disclosed is a patterning method including: forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and processing the first film by using the first resist pattern and the second resist pattern as a mask.

Abstract translation: 公开了一种图案化方法，包括：在基板上形成第一膜; 在第一膜上形成第一抗蚀剂膜; 通过光刻将第一抗蚀剂膜加工成具有预设间距的第一抗蚀剂图案; 通过向所述基板交替地供给含有有机硅的第一气体和含有活性氧的第二气体，在所述第一抗蚀剂图案和所述第一膜上形成氧化硅膜; 在氧化硅膜上形成第二抗蚀剂膜; 通过光刻将第二抗蚀剂膜加工成具有预设间距的第二抗蚀剂图案; 以及通过使用第一抗蚀剂图案和第二抗蚀剂图案作为掩模来处理第一膜。

公开(公告)号：US07651733B2

公开(公告)日：2010-01-26

申请号：US11407354

申请日：2006-04-20

Applicant: Kazuhide Hasebe ,  Hiroyuki Yamamoto ,  Takahito Umehara ,  Masato Kawakami

Inventor： Kazuhide Hasebe ,  Hiroyuki Yamamoto ,  Takahito Umehara ,  Masato Kawakami

IPC: C23C16/00

CPC classification number: C23C16/455 ,  C23C16/45578 ,  C23C16/4583 ,  C30B35/00

Abstract: A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.

Abstract translation: 本发明的气相生长单元包括：配置有基板的反应容器，具有第一气体导入管的第一气体导入部，在该第一气体导入管中形成有在反应容器内开口的气体喷出口， 用于向反应容器供给包含气体的有机金属构成的第一气体的第一气体导入部和具有第二气体导入管的第二气体导入部，在第二气体导入部中，在反应容器内开口的气体吐出口 形成第二气体导入部，其用于向反应容器供给与包含有机金属的气体反应的第二气体，其密度小于包含有机金属的气体的密度。 第一气体导入管的气体喷出口和第二气体导入管的气体喷出口沿配置在反应容器内的基板的外周配置。

公开(公告)号：US20090191722A1

公开(公告)日：2009-07-30

申请号：US12320018

申请日：2009-01-14

Applicant: Kazuhide Hasebe ,  Nobutake Nodera ,  Masanobu Matsunaga ,  Jun Satoh ,  Pao-Hwa Chou

Inventor： Kazuhide Hasebe ,  Nobutake Nodera ,  Masanobu Matsunaga ,  Jun Satoh ,  Pao-Hwa Chou

IPC: H01L21/31 ,  B05C11/00

CPC classification number: H01L21/3185 ,  C23C16/345 ,  C23C16/45542

Abstract: A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner.

Abstract translation: 使用成膜方法在目标衬底上形成氮化硅膜，通过重复等离子体循环和非等离子体循环多次，在被配置为选择性地供给包含硅烷族的第一工艺气体的工艺过程中 气体和含有氮化气体的第二工艺气体，并与用于激发待供应的第二工艺气体的激励机构连通。 该方法包括获得表示等离子体循环与非等离子体循环的循环混合方式相对于氮化硅膜的膜质量因子的关系的关系式或关系表; 参照关系公式或关系表，基于电影品质因子的目标值确定循环混合方式的具体方式; 并根据具体方式布置成膜处理。

公开(公告)号：US20090104760A1

公开(公告)日：2009-04-23

申请号：US12341642

申请日：2008-12-22

Applicant: Masaki KUROKAWA ,  Katsuhiko Komori ,  Norifumi Kimura ,  Kazuhide Hasebe ,  Takehiko Fujita ,  Akitake Tamura ,  Yoshikazu Furusawa

Inventor： Masaki KUROKAWA ,  Katsuhiko Komori ,  Norifumi Kimura ,  Kazuhide Hasebe ,  Takehiko Fujita ,  Akitake Tamura ,  Yoshikazu Furusawa

IPC: H01L21/205

CPC classification number: C23C16/22 ,  C23C16/45578

Abstract: A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.

Abstract translation: 布置垂直CVD装置以一起处理多个目标基板以形成硅锗膜。 该装置包括反应容器，其具有被配置为容纳目标基板的过程区域，以及配置成将混合气体供应到过程区域中的公共供应系统。 混合气体包括硅烷族的第一工艺气体和锗族的第二工艺气体。 共同供应系统包括设置在不同高度的多个供应口。

公开(公告)号：US20080264339A1

公开(公告)日：2008-10-30

申请号：US12213574

申请日：2008-06-20

Applicant: Kazuhide Hasebe ,  Mitsuhiro Okada

Inventor： Kazuhide Hasebe ,  Mitsuhiro Okada

IPC: B05C11/00

CPC classification number: C23C16/52 ,  C23C16/4408

Abstract: After silicon nitride films have been formed on wafers by a film forming process in a reaction vessel, the reaction vessel is processed by a purging process specified by a purging recipe and compatible with the film forming process to suppress production of gases and particles by removing surface parts of films deposited on the inside surface of the reaction vessel and causative of production of gases and particles.A wafer boat 25 holding a plurality of wafers W is loaded into a reaction vessel 2, and the wafers W are processed by a film forming process specified by a film forming recipe 1 specifying, for example, Si2Cl2 gas and NH3 gas as film forming gases. Subsequently, a purging recipe 1 specifying a purging process compatible to the film forming process is selected automatically, and the reaction vessel 2 is processed by the purging process specified by the purging recipe 1. A purging recipe is selected automatically from a plurality of purging recipes specifying purging processes respectively compatible with film forming processes. Unnecessary extension of purging time is suppressed and the reaction vessel 2 can be processed by an appropriate purging process compatible with the film forming process.

Abstract translation: 氮化硅膜通过成膜工艺在反应容器中形成在氮化硅膜上之后，通过清洗配方规定的清洗方法处理反应容器，与成膜工艺相容，通过除去表面来抑制气体和颗粒的产生 沉积在反应容器内表面上的部分薄膜，并导致气体和颗粒的产生。 将保持多个晶片W的晶片舟皿25装载到反应容器2中，并且通过由成膜配方1指定的成膜工艺处理晶片W，该成膜方法指定例如Si 2 O 3， Cl 2气体和NH 3气体作为成膜气体。 随后，自动选择指定与成膜过程相容的清洗过程的清洗配方1，并通过清洗配方1规定的清洗处理来处理反应容器2。 从指定与成膜过程相容的清洗处理的多个清洗配方自动选择清洗配方。 清洗时间的不必要的延长被抑制，反应容器2可以通过与成膜过程相容的适当清洗过程进行处理。

公开(公告)号：US20080081104A1

公开(公告)日：2008-04-03

申请号：US11902782

申请日：2007-09-25

Applicant: Kazuhide Hasebe ,  Yoshihiro Ishida ,  Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima

Inventor： Kazuhide Hasebe ,  Yoshihiro Ishida ,  Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima

IPC: C23C16/44

CPC classification number: C23C16/509 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45546 ,  H01J37/3244 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

Abstract: An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a silicon source gas and a second process gas including an oxidizing gas. The oxide film is formed by performing cycles each alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing the adsorption layer on the surface of the target substrate. The silicon source gas is a univalent or bivalent aminosilane gas, and each of the cycles is arranged to use a process temperature lower than that used for a trivalent aminosilane gas.

Abstract translation: 在选择性地供给包括硅源气体的第一工艺气体和包括氧化气体的第二工艺气体的工艺领域中，通过CVD在目标衬底上形成氧化物膜。 氧化膜是通过循环执行而形成的，每个循环包括第一和第二步骤。 第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。 第二工序气体供给第二工序气体，从而氧化目标衬底表面上的吸附层。 硅源气体是一价或二价氨基硅烷气体，并且每个循环被设置为使用低于用于三价氨基硅烷气体的工艺温度的工艺温度。

公开(公告)号：US07300885B2

公开(公告)日：2007-11-27

申请号：US11166073

申请日：2005-06-27

Applicant: Kazuhide Hasebe ,  Pao-Hwa Chou

Inventor： Kazuhide Hasebe ,  Pao-Hwa Chou

IPC: H01L21/31

CPC classification number: C23C16/45578 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45546 ,  H01J37/3244 ,  H01J2237/3321 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/3185

Abstract: A film formation method for a semiconductor process is arranged to form a thin film on a target substrate by CVD, while supplying a first process gas for film formation and a second process gas for reacting with the first process gas to a process field accommodating the target substrate. The method alternately includes first to fourth steps. The first step performs supply of the first and second process gases to the process field. The second step stops supply of the first and second process gases to the process field. The third step performs supply of the second process gas to the process field while stopping supply of the first process gas to the process field. The fourth step stops supply of the first and second process gases to the process field.

Abstract translation: 半导体工艺的成膜方法被布置成通过CVD在目标衬底上形成薄膜，同时提供用于成膜的第一工艺气体和用于与第一工艺气体反应的第二工艺气体到容纳靶的工艺场 基质。 该方法交替地包括第一至第四步骤。 第一步进行第一和第二工艺气体的供应。 第二步停止向工艺场供应第一和第二工艺气体。 第三步骤在停止向处理场供应第一处理气体的同时，向处理区域供应第二处理气体。 第四步骤停止将第一和第二工艺气体供应到工艺现场。