Abstract:
As the thickness of the card holder for preventing warping of a multilayered wiring substrate 1 is increased, there occurs a problem that a thin film sheet 2 is buried in a card holder and secure contact between probes 7 and test pads cannot be realized. For its prevention, the thin film sheet 2 and a bonding ring 6 are bonded in a state where a tensile force is applied only to the central region IA of the thin film sheet 2, and a tensile force is not applied to an outer peripheral region OA. Then, the height of the bonding ring 6 defining the height up to the probe surface of the thin film sheet 2 is increased, thereby increasing the height up to the probe surface of the thin film sheet 2.
Abstract:
A technique of manufacturing a semiconductor integrated circuit device is provided for reducing the possibility of attachment of foreign matter to a membrane probe when performing probe inspection using the membrane probe formed by the manufacturing technique. A pressing member for pressing a membrane sheet includes a pressing pin receiving portion relatively disposed above for receiving the tip of a pressing pin of the plunger in a recess, and a membrane sheet pressing portion relatively disposed below. The membrane sheet pressing portion in contact with the membrane sheet has the minimum plane size to enable pressing of the entire surface of one chip of interest to be subjected to the probe inspection.
Abstract:
A probe is contacted to a test pad, without destroying the circuit formed in the chip at the time of a probe test. Therefore, a load jig, a pressing tool, an elastomer, an adhesion ring, and a plunger are made into one by fixation with a nut and a bolt. The elastic force of the spring installed between the spring retaining jig and the load jig acts so that the member used as these one may be depressed toward pad PD. The thrust transmitted from the spring in a plunger to a thin films sheet is used only for the extension of a thin films sheet.
Abstract:
A technique of manufacturing a semiconductor integrated circuit device is provided for reducing the possibility of attachment of foreign matter to a membrane probe when performing probe inspection using the membrane probe formed by the manufacturing technique. A pressing member for pressing a membrane sheet includes a pressing pin receiving portion relatively disposed above for receiving the tip of a pressing pin of the plunger in a recess, and a membrane sheet pressing portion relatively disposed below. The membrane sheet pressing portion in contact with the membrane sheet has the minimum plane size to enable pressing of the entire surface of one chip of interest to be subjected to the probe inspection.
Abstract:
The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.
Abstract:
Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.
Abstract:
Dispersion of load may be kept within an allowance even when a plurality of probes in a large area are pressed in batch by pressing the probes provided in a membrane to a wafer by applying a pressure load to a plurality of places of a plane of pressure members on the side opposite from the wafer in a probe test step/burn-in test step which is one of semiconductor device manufacturing steps. It is then possible to provide semiconductor devices and a manufacturing method thereof which enhance the reliability and productivity of the semiconductor devices by probing a large number of integrated circuits or a large size integrated circuit in the same time.
Abstract:
To permit electrical testing of a semiconductor integrated circuit device having test pads disposed at narrow pitches probes in a pyramid or trapezoidal pyramid form are formed from metal films formed by stacking a rhodium film and a nickel film successively. Via through-holes are formed in a polyimide film between interconnects and the metal films, and the interconnects are electrically connected to the metal films. A plane pattern of one of the metal films equipped with one probe and through-hole is obtained by turning a plane pattern of the other metal film equipped with the other probe and through-hole through a predetermined angle.
Abstract:
To permit electrical testing of a semiconductor integrated circuit device having test pads disposed at narrow pitches probes in a pyramid or trapezoidal pyramid form are formed from metal films formed by stacking a rhodium film and a nickel film successively. Via through-holes are formed in a polyimide film between interconnects and the metal films, and the interconnects are electrically connected to the metal films. A plane pattern of one of the metal films equipped with one probe and through-hole is obtained by turning a plane pattern of the other metal film equipped with the other probe and through-hole through a predetermined angle.
Abstract:
A probe having a sufficient height is manufactured by selectively depositing, over the main surface of a wafer, a copper film in a region in which a metal film is to be formed and a region which will be outside an adhesion ring when a probe card is fabricated; forming the metal film, polyimide film, interconnect, another polyimide film, another interconnect and a further polyimide film; and then removing the wafer and copper film. According to the present invention, when probe testing is performed using a prober (thin film probe) having the probe formed in the above-described manner while utilizing the manufacturing technology of semiconductor integrated circuit devices, it is possible to prevent breakage of the prober and a wafer to be tested.