Abstract:
LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
Abstract:
A display that contains a backlight that incorporates an optical coating either on or above the light guide in order to reduce the appearance of optical hotspots on the display is provided. The optical coating can be patterned to correspond to the position of each light emitting diode in the display and can be made, as an example, from either reflective, diffusive or dichroic material. The coating can work to overcome the hotspots created by insufficient light mixing distance in the backlight.
Abstract:
Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.
Abstract:
A display may have an array of pixels. Each pixel may have a light-emitting diode such as an organic light-emitting diode or may be formed from other pixel structures such as liquid crystal display pixel structures. The pixels may emit light such as red, green, and blue light. An angle-of-view adjustment layer may overlap the array of pixels. During operation, light from the pixels passes through the angle-of-view adjustment layer to a user. The viewing angle for the user is enhanced as the angular spread of the emitted light from the pixels is enhanced by the angle-of-view adjustment layer. The angle-of-view adjustment layer may be formed from holographic structures recorded by applying laser beams to a photosensitive layer or may be formed from a metasurface that is created by patterning nanostructures on the display using printing, photolithography, or other patterning techniques.
Abstract:
Quantum dot backlights for use in displays and processes for controlling the dimming of quantum dot backlights are provided. The backlight can include an LED (e.g., a blue LED) configured to emit a light through a sheet of quantum dots. The quantum dots can be configured to emit colored light (e.g., red and green light) in response to the light emitted from the LED. To control the relative luminance of the LED, the backlight can be controlled through the use of current dimming to adjust the brightness of the LED at high relative luminance settings to increase the light output efficiency and can include the use of pulse width modulation to adjust the brightness of the LED at low relative luminance settings to reduce the amount of wavelength shift experienced by the LED.
Abstract:
A display may have thin-film transistor circuitry on a substrate. An array of organic light-emitting diodes may be formed on the thin-film transistor circuitry. The organic light-emitting diodes may have anodes, cathodes, and emissive material located between the anodes and cathodes. A circular polarizer may be formed over the array of organic light-emitting diodes. The circular polarizer may include a linear polarizer and a quarter wave plate. The linear polarizer may be formed from one or more film layers having narrowband dichroic dyes so that the polarizer exhibits transmission peaks aligned with a selected subset of wavelengths and absorbance notches corresponding to the selected subset of wavelengths. The selected subset of wavelengths may cover the ranges where the light-emitting diodes are outputting light. Configured in this way, the polarizer will exhibit enhanced luminance at the desired wavelengths while suppressing ambient light reflections at other wavelengths in the visible spectrum.
Abstract:
A display may be provided with light sources. The light sources may include light-emitting diodes. The light sources may have packages formed from package bodies to which the light-emitting diodes are mounted. Layers such as quantum dot layers, light-scattering layers, spacer layers, and diffusion barrier layers may be formed over the package bodies and light-emitting diodes. Quantum dots of different colors may be stacked on top of each other. A getter may be incorporated into one or more of the layers to getter oxygen and water. Quantum dots may be formed from semiconductor layers that are doped with n-type and p-type dopant to adjust the locations of their conduction and valance bands and thereby enhanced quantum dot performance.
Abstract:
LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
Abstract:
LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
Abstract:
Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.