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    Methods for etching silicon using hydrogen radicals in a hot wire chemical vapor deposition chamber
    11.
    发明授权
    Methods for etching silicon using hydrogen radicals in a hot wire chemical vapor deposition chamber 有权
    在热线化学气相沉积室中使用氢自由基蚀刻硅的方法

    公开(公告)号：US09305796B2

    公开(公告)日：2016-04-05

    申请号：US14533389

    申请日：2014-11-05

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Sukti Chatterjee ,  Srinivas D. Nemani

    IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/3105

    CPC classification number: H01L21/3065 ,  H01J2237/334 ,  H01L21/0234 ,  H01L21/02532 ,  H01L21/30621 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67207

    Abstract: Methods for etching silicon using hydrogen radicals in a hot wire chemical vapor deposition process are provided herein. In some embodiments, a method of processing a substrate having a crystalline silicon layer atop the substrate and a patterned masking layer atop the crystalline silicon layer exposing portions of the crystalline silicon layer; the method may include (a) exposing the substrate to a plasma formed from an inert gas wherein ions from the plasma amorphize a first part of the exposed portions of the crystalline silicon layer; and (b) exposing the substrate to hydrogen radicals generated from a process gas comprising a hydrogen-containing gas in a hot wire chemical vapor deposition (HWCVD) process chamber to etch the amorphized first part of the exposed portion of the crystalline silicon layer.

    Abstract translation: 本文提供了在热线化学气相沉积工艺中使用氢自由基蚀刻硅的方法。 在一些实施例中，一种处理在衬底上方具有晶体硅层的衬底的方法以及暴露晶体硅层部分的晶体硅层顶部的图案化掩模层; 该方法可以包括（a）将衬底暴露于由惰性气体形成的等离子体，其中来自等离子体的离子将晶体硅层的暴露部分的第一部分非晶化; 和（b）将基底暴露于在热线化学气相沉积（HWCVD）处理室中由包含含氢气体的工艺气体产生的氢自由基，以蚀刻晶体硅层的暴露部分的非晶化第一部分。

    Methods for forming protective coatings containing crystallized aluminum oxide
    19.
    发明授权
    Methods for forming protective coatings containing crystallized aluminum oxide 有权

    公开(公告)号：US11466364B2

    公开(公告)日：2022-10-11

    申请号：US16670555

    申请日：2019-10-31

    Applicant: Applied Materials, Inc.

    Inventor： Kenichi Ohno ,  Eric H. Liu ,  Sukti Chatterjee ,  Yuriy Melnik ,  Thomas Knisley ,  David Alexander Britz ,  Lance A. Scudder ,  Pravin K. Narwankar

    IPC: C23C16/455 ,  C23C16/02 ,  C23C16/56 ,  C23C16/40

    Abstract: Embodiments of the present disclosure generally relate to protective coatings on substrates and methods for depositing the protective coatings. In one or more embodiments, a method of forming a protective coating on a substrate includes depositing a chromium oxide layer containing amorphous chromium oxide on a surface of the substrate during a first vapor deposition process and heating the substrate containing the chromium oxide layer comprising the amorphous chromium oxide to convert at least a portion of the amorphous chromium oxide to crystalline chromium oxide during a first annealing process. The method also includes depositing an aluminum oxide layer containing amorphous aluminum oxide on the chromium oxide layer during a second vapor deposition process and heating the substrate containing the aluminum oxide layer disposed on the chromium oxide layer to convert at least a portion of the amorphous aluminum oxide to crystalline aluminum oxide during a second annealing process.

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